201588 ⎘
Thin magnetic films, e.g. of one-domain structure; Spin-exchange-coupled multilayers, e.g. nanostructured superlattices; Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer Spin-exchange coupled multilayers having at least one layer with perpendicular magnetic anisotropy
MAGNETIC DEVICE
#302Semiconductor storage device
#303Magnetic tunnel junction with perpendicular shape anisotropy and minimised variation of temperature memory point and logic element including the magnetic tunnel junction, method of manufacturing the magnetic tunnel junction
#304Magnet structure, rotational angle detector, and electric power steering device
#305Perpendicular spin transfer torque magnetic mechanism
#306Magnetoresistance element with extended linear response to magnetic fields
#307Storage device, manufacturing method therefor, and storage apparatus
#308Vertical spin orbit torque devices
#309Probabilistic neuron circuits
#310Magnetic head and magnetic recording and reproducing device
#311Method for stabilizing spin element and method for manufacturing spin element
#312Storage element and storage apparatus
#313Magnetoresistance effect element and method for manufacturing the same
#314Magnetic stack, multilayer, tunnel junction, memory point and sensor comprising such a stack
#315Spin current magnetoresistance effect element and magnetic memory
#316Magnetic sensor and method for manufacturing said magnetic sensor
#317Perpendicular Magnetic Anisotropy Interface Tunnel Junction Devices
#318Nitride capping layer for spin torque transfer (STT)-magnetoresistive random access memory (MRAM)
#319Magnetoresistance effect device
#320Semiconductor circuit, control method of semiconductor circuit, and electronic apparatus
#321Terahertz Radiation Emitters
#322Magnetoresistive stacks and methods therefor
#323Methods of fabricating magnetic tunnel junctions integrated with selectors
#324Method for manufacturing reduced pitch magnetic random access memory pillar
#325Method for manufacturing high density magnetic random access memory devices using diamond like carbon hard mask
#326Perpendicular magnetic tunnel junction retention and endurance improvement
#327Perpendicular magnetic anisotropy interface tunnel junction devices and methods of manufacture
#328Perpendicular magnetic tunnel junction having improved reference layer stability
#329High retention storage layer using ultra-low RA MgO process in perpendicular magnetic tunnel junctions for MRAM devices
#330Magnetic random access memory with reduced internal operating temperature range
#331Antiferromagnetic exchange coupling enhancement in perpendicular magnetic tunnel junction stacks for magnetic random access memory applications
#332Perpendicular magnetic tunnel junction device with precessional spin current layer having a modulated moment density
#333Methods for manufacturing a perpendicular magnetic tunnel junction (p-MTJ) MRAM having a precessional spin current injection (PSC) structure
#334Magnetic memory having a pinning synthetic antiferromagnetic structure (SAF) with cobalt over platinum (Pt/Co) bilayers
#335Vertically-strained silicon device for use with a perpendicular magnetic tunnel junction (PMTJ)
#336Magnetic memory chip having nvm class and SRAM class MRAM elements on the same chip
#337Method for measuring proximity effect on high density magnetic tunnel junction devices in a magnetic random access memory device
#338Spin-orbit torque type magnetization rotation element, spin-orbit torque magnetoresistance effect element, and method of manufacturing spin-orbit torque type magnetization rotation element
#339Methods and systems for writing to magnetic memory devices utilizing alternating current
#340Perpendicular magnetic tunnel junction device with skyrmionic assist layers for free layer switching
#341Magnetic tunnel junction (MTJ) memory device having a composite free magnetic layer
#342Magnetic memory element including magnesium perpendicular enhancement layer
#343Fully compensated synthetic ferromagnet for spintronics applications
#344Electronic device and method for fabricating the same
#345Data storage in synthetic antiferromagnets included in magnetic tunnel junctions
#346Nonvolatile memory cell, memory cell unit, and information writing method, and electronic apparatus
#347Magnetoresistive effect element
#348Tunnel magnetoresistive effect element
#349Minimal thickness synthetic antiferromagnetic (SAF) structure with perpendicular magnetic anisotropy for STT-MRAM
#350Magnetic memory using spin-orbit torque
#351Magneto-ionic device with a solid state proton pump and methods for using the same
#352Memory device
#353Selector Device Incorporating Conductive Clusters for Memory Applications
#354Underlayer for perpendicularly magnetized film, perpendicularly magnetized film structure, perpendicular MTJ element, and perpendicular magnetic recording medium using the same
#355EXCHANGE-COUPLED FILM, MAGNETORESISTIVE ELEMENT INCLUDING THE SAME, AND MAGNETIC SENSING DEVICE
#356Magnetic memory devices
#357Resonance rotating spin-transfer torque memory device
#358Magnetoresistance effect element
#359Magnetic element
#360Giant perpendicular magnetic anisotropy in Fe/GaN thin films for data storage and memory devices
#361Magnetoresistance effect device and magnetoresistance effect module
#362Spin current assisted magnetoresistance effect device
#363Multilayer Structure for Reducing Film Roughness in Magnetic Devices
#364Magnetic detection circuit, MRAM and operation method thereof
#365Magnetoresistive stacks and methods therefor
#366Spin current magnetization rotating element, magnetoresistive effect element and magnetic memory
#367Variable resistance memory devices
#368MTJ structures, STT MRAM structures, and methods for fabricating integrated circuits including the same
#369Perpendicular magnetic memory using spin-orbit torque
#370MAGNETORESISTIVE ELEMENT, MEMORY ELEMENT, AND ELECTRONIC APPARATUS
#371Spin-orbit torque magnetic device
#372Magnetoresistive effect element and magnetic memory
#373Stacked structure, magnetoresistive effect element, magnetic head, sensor, high frequency filter, and oscillator
#374Multilayer Structure for Reducing Film Roughness in Magnetic Devices
#375Magnetic memory device
#376Spin current magnetization rotational element, spin-orbit-torque magnetoresistance effect element, magnetic memory, and high-frequency magnetic element
#377Magnetic memory device
#378Magnetic memory device
#379Semiconductor memory device
#380Semiconductor memory devices
#381Magnetic device
#382Magnetic memory device
#383Magnetoresistance effect element and magnetic memory
#384Spin current magnetization rotational element, spin-orbit-torque magnetoresistance effect element, magnetic memory, and high-frequency magnetic element
#385Spin current magnetization rotational element, magnetoresistance effect element, magnetic memory, and high-frequency magnetic element
#386Nonvolatile magnetic memory device
#387Spin current magnetization rotational element, method of manufacturing the same, magnetoresistance effect element, and magnetic memory
#388Semiconductor memory device and semiconductor memory manufacturing apparatus
#389Magnetoresistance effect device and high frequency device
#390Templating layers for perpendicularly magnetized Heusler films
#391Magnetic random access memory with perpendicular enhancement layer
#392Magnetoresistive stack/structure including metal insertion substance
#393Memory cell having magnetic tunnel junction and thermal stability enhancement layer
#394Magnetic sensor using spin hall effect
#395Spin current magnetization rotational element, magnetoresistance effect element, and magnetic memory
#396Switching of perpendicularly magnetized nanomagnets with spin-orbit torques in the absence of external magnetic fields
#397Magnetic wall utilization-analog memory element and magnetic wall utilization analog memory
#398Spin current magnetization rotational element
#399Method and system for providing a diluted free layer magnetic junction usable in spin transfer or spin-orbit torque applications
#400MAGNETIC STRUCTURES HAVING DUSTING LAYER
#401Strained perpendicular magnetic tunnel junction devices
#402Storage element
#403SEMICONDUCTOR STORAGE DEVICE
#404MgO insertion into free layer for magnetic memory applications
#405MICROWAVE SENSOR AND MICROWAVE IMAGING DEVICE
#406Random number generator, random number generation device, neuromorphic computer, and quantum computer
#407Spin transfer torque memory (STTM), methods of forming the same using volatile compound forming elements, and devices including the same
#408PSTTM device with bottom electrode interface material
#409PSTTM device with free magnetic layers coupled through a metal layer having high temperature stability
#410Ground state artificial skyrmion lattices at room temperature
#411PSTTM device with multi-layered filter stack
#412Spin logic with spin hall electrodes and charge interconnects
#413Storage element and storage apparatus
#414Tuning magnetic anisotropy for spin-torque memory
#415MRAM reference cell with shape anisotropy to establish a well-defined magnetization orientation between a reference layer and a storage layer
#416Engineered barrier layer interface for high speed spin-transfer torque magnetic random access memory
#417Templating layers for perpendicularly magnetized heusler films
#418Semiconductor device, semiconductor device control method and optical switch
#419Electronic device
#420Apparatus for spin injection enhancement and method of making the same
#421Data storage in synthetic antiferromagnets included in magnetic tunnel junctions
#422Magnetic tunnel junction with low defect rate after high temperature anneal for magnetic device applications
#423Magnetoresistance effect element and magnetic memory
#424Electronic device, topological insulator, fabrication method of topological insulator and memory device
#425Alloy thin films exhibiting perpendicular magnetic anisotropy
#426Multilayer thin films exhibiting perpendicular magnetic anisotropy
#427PULSE GENERATION DEVICE
#428Magnetic device configured to perform an analog adder circuit function and method for operating such magnetic device
#429Non-collinear magnetoresistive device
#430Electric-current-generated magnetic field assist type spin-current-induced magnetization reversal element, magnetoresistance effect element, magnetic memory and high-frequency filter
#431Electronic device and method for fabricating the same using treatment with nitrogen and hydrogen
#432Magnetoresistance effect element
#433Variable-frequency magnetoresistive effect element and oscillator, detector, and filter using the same
#434Magnetic memory element with perpendicular enhancement layer
#435Magnetic memory element with iridium anti-ferromagnetic coupling layer
#436Storage device, storage apparatus, magnetic head, and electronic apparatus
#437Fully compensated synthetic ferromagnet for spintronics applications
#438Magnetoresistive device and method of forming the same
#439Perpendicular magnetic tunnel junction devices with high thermal stability
#440Amorphous seed layer for improved stability in perpendicular STTM stack
#441Perpendicular magnetic layer and magnetic device including the same
#442Storage element and storage apparatus
#443Method for Forming Perpendicular Magnetization Type Magnetic Tunnel Junction Element and Apparatus for Producing Perpendicular Magnetization Type Magnetic Tunnel Junction Element
#444MAGNETIC ELEMENT AND METHOD OF FABRICATION THEREOF
#445Multilayer structure for reducing film roughness in magnetic devices
#446Magnetic element
#447Ultrathin perpendicular pinned layer structure for magnetic tunneling junction devices
#448Perpendicular magnetic anisotropy BCC multilayers
#449Underlayer for perpendicularly magnetized film, perpendicularly magnetized film structure, perpendicular MTJ element, and perpendicular magnetic recording medium using the same
#450Termination layer-compensated tunneling magnetoresistance in ferrimagnetic Heusler compounds with high perpendicular magnetic anisotropy
#451Magnetoresistive element
#452Seed layer for multilayer magnetic materials
#453Magnetic memory element with composite perpendicular enhancement layer
#454Side shielded magnetoresistive (MR) read head with perpendicular magnetic free layer
#455Nonvolatile magnetic memory device
#456Perpendicular spin transfer torque memory (STTM) device with enhanced stability and method to form same
#457Spin oscillator device
#458Magnetic tunnel junction with low defect rate after high temperature anneal for magnetic device applications
#459Magnetic memory devices having a perpendicular magnetic tunnel junction
#460Magnetoresistance effect element
#461Magnetoresistive element and magnetic memory
#462Magnetoresistive element and magnetic memory
#463Magnetic memory element and memory device
#464Perpendicular magnetic anisotropy BCC multilayers
#465Memory device
#466Storage element and storage apparatus
#467Magnetoresistive effect oscillator
#468High annealing temperature perpendicular magnetic anisotropy structure for magnetic random access memory
#469CoFe/Ni multilayer film with perpendicular anisotropy for microwave assisted magnetic recording
#470Magnetic tunnel junction (MTJ) memory element having tri-layer perpendicular reference layer
#471Circuits and devices based on spin hall effect to apply a spin transfer torque with a component perpendicular to the plane of magnetic layers
#472Storage element, storage device, and magnetic head
#473Manufacturing method of magnetoresistive effect element
#474Storage element, storage apparatus, and magnetic head
#475Self-referenced memory device and method using spin-orbit torque for reduced size
#476Magnetic random access memory with perpendicular interfacial anisotropy
#477Magnetic random access memory with tri-layer reference layer
#478Magnetoresistive element and magnetic memory
#479Ultrathin perpendicular pinned layer structure for magnetic tunneling junction devices
#480Storage element and storage device
#481Spin torque majority gate device
#482Spin transfer torque tunneling magnetoresistive device having a laminated free layer with perpendicular magnetic anisotropy
#483High stability spintronic memory
#484Storage element and memory
#485Magnetic memory
#486Free layer with out-of-plane anisotropy for magnetic device applications
#487Spin oscillator device
#488Magneto-electronic devices and methods of production
#489Magnetoresistive element
#490Magnetic structures, methods of forming the same and memory devices including a magnetic structure
#491Spin hall effect magnetic apparatus, method and applications
#492Magnetic memory element with composite fixed layer
#493Multilayer magnetic storage element and storage device
#494Magnetic random access memory with perpendicular enhancement layer
#495Magnetic random access memory element having tantalum perpendicular enhancement layer
#496Perpendicular spin transfer torque memory (STTM) device with enhanced stability and method to form same
#497Magnetic device
#498Storage element, storage apparatus, and magnetic head
#499Magnetic memory cells and methods of formation
#500Perpendicular MTJ stacks with magnetic anisotrophy enhancing layer and crystallization barrier layer
#501CoFe/Ni multilayer film with perpendicular anisotropy for microwave assisted magnetic recording
#502Scalable orthogonal spin transfer magnetic random access memory devices with reduced write error rates
#503Perpendicularly magnetized ultrathin film exhibiting high perpendicular magnetic anisotropy, method for manufacturing same, and application
#504Magnetization controlling element using magnetoelectric effect
#505Magnetic memory device
#506Cobalt (Co) and platinum (Pt)-based multilayer thin film having inverted structure and method for manufacturing same
#507Magnetoresistance effect element and magnetic memory
#508Side shielded magnetoresistive (MR) read head with perpendicular magnetic free layer
#509Magnetic tunnel junction with perpendicular enhancement layer and thin reference layer
#510Magnetic random access memory with perpendicular enhancement layer
#511Magnetic random access memory with perpendicular interfacial anisotropy
#512Quantum computing device spin transfer torque magnetic memory
#513Electric field ferromagnetic resonance excitation method and magnetic function element employing same
#514Magnetoresistive element and magnetic memory using the same
#515Method of manufacturing spin torque oscillator
#516Magnetic devices having perpendicular magnetic tunnel junction
#517Method of making a high thermal stability reference structure with out-of-plane anisotropy for magnetic device applications
#518Magnetic memory device and method of magnetic domain wall motion
#519High thermal stability reference structure with out-of-plane anisotropy for magnetic device applications
#520Magnetic memory devices having a perpendicular magnetic tunnel junction
#521Magnetoresistive element and magnetic memory
#522Minimal thickness synthetic antiferromagnetic (SAF) structure with perpendicular magnetic anisotropy for STT-MRAM
#523Magnetic memory device
#524Method for manufacturing a magnetic tunnel junction device
#525Storage element and memory
#526Storage element and storage device
#527Perpendicular spin transfer torque memory (STTM) device with enhanced stability and method to form same
#528High stability spintronic memory
#529Storage element and storage apparatus
#530Magnetic memory
#531Magnetic memory element and magnetic memory device
#532Magnetoresistive element
#533Memory element and memory device
#534Co/Ni multilayers with improved out-of-plane anisotropy for magnetic device applications
#535Co/Ni multilayers with improved out-of-plane anisotropy for magnetic device applications
#536Co/Ni multilayers with improved out-of-plane anisotropy for magnetic device applications
#537Method of fabricating a magnetic tunnel junction (MTJ) device with reduced switching current
#538Magnetic memory devices including magnetic layers separated by tunnel barriers
#539Magnetic random access memory having perpendicular enhancement layer and interfacial anisotropic free layer
#540Spin hall effect magnetic apparatus, method and applications
#541Method and system for providing magnetic tunneling junction elements having improved performance through capping layer induced perpendicular anisotropy and memories using such magnetic elements
#542Magnetic random access memory having perpendicular composite reference layer
#543Free layer with out-of-plane anisotropy for magnetic device applications
#544Magnetoresistive element using specific underlayer material
#545Magnetoresistive element and magnetic memory using the same
#546Nonvolatile magnetic memory device
#547Inverted orthogonal spin transfer layer stack
#548Seed layer for multilayer magnetic materials
#549Magnetoresistive-based mixed anisotropy high field sensor
#550Perpendicular MTJ stacks with magnetic anisotropy enhancing layer and crystallization barrier layer
#551Minimal thickness synthetic antiferromagnetic (SAF) structure with perpendicular magnetic anisotropy for STT-MRAM
#552Method and system for providing dual magnetic tunneling junctions using spin-orbit interaction-based switching and memories utilizing the dual magnetic tunneling junctions
#553Memory element and memory device
#554Magnetic random access memory having perpendicular enhancement layer
#555Magneto-electronic component, and method for the production thereof
#556High speed STT-MRAM with orthogonal pinned layer
#557Perpendicular STTMRAM device with balanced reference layer
#558Domain wall motion in perpendicularly magnetized wires having artificial antiferromagnetically coupled multilayers with engineered interfaces
#559Co/X and CoX multilayers with improved out-of-plane anisotropy for magnetic device applications
#560Magnetic devices having perpendicular magnetic tunnel junction
#561Storage element, method for manufacturing storage element, and memory
#562Magnetic memory device
#563Magnetic oscillator
#564Free layer with high thermal stability for magnetic device applications by insertion of a boron dusting layer
#565Reduction of capping layer resistance area product for magnetic device applications
#566Memory cells, semiconductor device structures, systems including such cells, and methods of fabrication
#567Magnetic memory and method of fabricating the same
#568Magnetoresistive element and magnetoresistive memory
#569High thermal stability free layer with high out-of-plane anisotropy for magnetic device applications
#570High thermal stability reference structure with out-of-plane aniotropy to magnetic device applications
#571Engineered magnetic layer with improved perpendicular anisotropy using glassing agents for spintronic applications
#572TOP-PINNED MAGNETIC TUNNEL JUNCTION DEVICE WITH PERPENDICULAR MAGNETIZATION
#573Magnetic element having perpendicular anisotropy with enhanced efficiency
#574MAGNETIC STRUCTURES, METHODS OF FORMING THE SAME AND MEMORY DEVICES INCLUDING A MAGNETIC STRUCTURE
#575Magnetoresistive effect element and magnetic random access memory using the same
#576Spin torque transfer magnetic tunnel junction fabricated with a composite tunneling barrier layer
#577Magnetic device having a magnetic material in a contact structure coupled to a magnetic element and method of manufacture thereof
#578Method and system for providing magnetic junctions having improved characteristics
#579Method and system for providing a magnetic tunneling junction using thermally assisted switching
#580Magnetoresistive device and a writing method for a magnetoresistive device
#581Perpendicularly magnetized thin film structure and method for manufacturing the same
#582MAGNETIC MEMORY ELEMENT AND MAGNETIC MEMORY
#583Magnetic memory element and nonvolatile memory device
#584Magnetoresistive effect element, magnetic memory, and magnetoresistive effect element manufacturing method
#585Strain induced reduction of switching current in spin-transfer torque switching devices
#586Magnetoresistance Device
#587METHOD FOR MANUFACTURING PARTICLES SUCH AS MAGNETIC MICRO- OR NANOPARTICLES
#588Magnetic sensors having perpendicular anisotropy free layer
#589Magnetic recording head and magnetic recording/reproducing apparatus
#590Storage element and storage device
#591CoFe/Ni Multilayer film with perpendicular anisotropy for microwave assisted magnetic recording
#592CoFe/Ni multilayer film with perpendicular anisotropy for microwave assisted magnetic recording
#593Magnetoresistive effect element, magnetic memory cell using same, and random access memory
#594Magnetic memory cell construction
#595Magneto-electronic devices and methods of production
#596Magnetoresistive element and magnetic memory using the same
#597MAGNETIC TUNNEL JUNCTION WITH IRON DUSTING LAYER BETWEEN FREE LAYER AND TUNNEL BARRIER
#598PERPENDICULAR MRAM WITH MTJ INCLUDING LAMINATED MAGNETIC LAYERS
#599Method and system for providing magnetic tunneling junctions usable in spin transfer torque magnetic memories
#600Three-terminal spin-torque oscillator (STO)