METHOD FOR MANUFACTURING MAGNETIC LAMINATED BODY AND MAGNETIC SENSOR, AND APPARATUS FOR MANUFACTURING MAGNETIC LAMINATED BODY

Perpendicular MR SAF

MAGNETO-RESISTIVE RANDOM-ACCESS MEMORY (MRAM) DEVICES AND METHODS OF FORMING THE SAME

CRYSTAL SEED LAYER FOR MAGNETIC RANDOM ACCESS MEMORY (MRAM)

Toggle SOT-MRAM Architecture with Self-Terminating Write Operation

Multilayer Structure for Reducing Film Roughness in Magnetic Devices

MAGNETIC MEMORY DEVICE

MAGNETORESISTIVE DEVICE

MAGNETORESTISTIVE SENSOR SENSITIVE TO AN OUT-OF-PLANE MAGNETIC FIELD

MAGNETIC MEMORY DEVICE

TMR SENSOR HAVING TUNED VORTEX RESPONSE

MAGNETORESISTIVE ELEMENT AND MAGNETIC MEMORY

SPIN MEMORY ENCRYPTION

MAGNETIC DEVICE, MAGNETIC HEAD, AND MAGNETIC RECORDING DEVICE

MAGNETORESISTIVE STACK AND METHODS THEREFOR

Magnetic Memory Element Including Perpendicular Enhancement Layer and Oxide Cap Layer

FREE LAYER IN MAGNETORESISTIVE RANDOM-ACCESS MEMORY

SEMICONDUCTOR DEVICE INCLUDING MAGNETIC TUNNEL JUNCTION STRUCTURE

MAGNETORESISTIVE EFFECT MEMORY, MEMORY ARRAY, AND MEMORY SYSTEM

SWITCHING OF PERPENDICULARLY MAGNETIZED NANOMAGNETS WITH SPIN-ORBIT TORQUES IN THE ABSENCE OF EXTERNAL MAGNETIC FIELDS

MAGNETIC STORAGE DEVICE PROVIDED WITH MAGNETORESISTIVE ELEMENT

MRAM STACKS, MRAM DEVICES AND METHODS OF FORMING THE SAME

SYNTHETIC ANTIFERROMAGNET, MAGNETIC TUNNELING JUNCTION DEVICE INCLUDING THE SYNTHETIC ANTIFERROMAGNET, AND MEMORY DEVICE INCLUDING THE MAGNETIC TUNNELING JUNCTION DEVICE

Magnetic Layer for Magnetic Random Access Memory (MRAM) by Moment Enhancement

SPIN CURRENT MAGNETIZATION ROTATIONAL ELEMENT, SPIN CURRENT MAGNETIZATION ROTATIONAL TYPE MAGNETORESISTIVE ELEMENT, MAGNETIC MEMORY, AND MAGNETIZATION ROTATION METHOD

MTJ PILLAR HAVING TEMPERATURE-INDEPENDENT DELTA

FE-X TEMPLATING LAYERS FOR GROWTH OF PERPENDICULARLY MAGNETIZED HEUSLER FILMS ON TOP OF A TUNNEL BARRIER

MAGNETIC TUNNELING JUNCTION DEVICE AND MEMORY DEVICE INCLUDING THE SAME

MAGNETIC TUNNELING JUNCTION DEVICE CAPABLE OF MAGNETIC SWITCHING WITHOUT EXTERNAL MAGNETIC FIELD AND MEMORY DEVICE INCLUDING THE SAME

MAGNETORESISTIVE STACK/STRUCTURE AND METHODS THEREFOR

MAGNETIC TUNNEL JUNCTION (MTJ) ELEMENT AND ITS FABRICATION PROCESS

MAGNON JUNCTION, MAGNON RANDOM ACCESS MEMORY, MAGNON MICROWAVE OSCILLATOR AND DETECTOR, ELECTRONIC DEVICE

Near-Landauer Reversible Skyrmion Logic with Voltage-Based Propagation

PERPENDICULAR SHAPE ANISOTROPY DESIGN WITH REDUCED AEX

PERPENDICULAR SHAPE ANISOTROPY DESIGN WITH ASYMMETRIC COMPOSITE FREE LAYER

PERPENDICULAR SHAPE ANISOTROPY DESIGN WITH DUAL SPIN FILTERING

CHIRAL COUPLING-BASED VALLEYTRONIC MAGNETOELECTRIC SPIN-ORBIT DEVICES

Magnetic memory using spin-orbit torque

MAGNETIZATION ROTATIONAL ELEMENT AND MAGNETORESISTIVE EFFECT ELEMENT

MRAM STACKS, MRAM DEVICES AND METHODS OF FORMING THE SAME

CRYSTAL SEED LAYER FOR MAGNETIC RANDOM ACCESS MEMORY (MRAM)

SWITCHING OF PERPENDICULARLY MAGNETIZED NANOMAGNETS WITH SPIN-ORBIT TORQUES IN THE ABSENCE OF EXTERNAL MAGNETIC FIELDS

Controlling out-of-plane anisotropy in an MR sensor with free layer dusting

Storage element and storage apparatus

MAGNETIC TUNNEL JUNCTION STRUCTURES AND RELATED METHODS

MAGNETO-RESISTIVE RANDOM-ACCESS MEMORY (MRAM) DEVICES AND METHODS OF FORMING THE SAME

Magnetic memory element including perpendicular enhancement layers and dual oxide cap layers

SPIN LOGIC DEVICE BASED ON SPIN-CHARGE CONVERSION AND SPIN LOGIC ARRAY USING THE SAME

FERROMAGNETIC FREE LAYER, LAMINATED STRUCURE COMPRISING THE SAME, MAGNETIC TUNNEL JUNCTION STRUCTURE, MAGNETORESISTIVE RANDOM ACCESS MEMORY, AND IRON-COBALT BASED TARGET

NEURON DEVICE BASED ON SPIN ORBIT TORQUE

FIELD-FREE SPIN-ORBIT TORQUE SWITCHING OF PERPENDICULARLY POLARIZED MAGNETS

Magnetoresistive memory device and method of operating same using ferroelectric-controlled exchange coupling

Magnetoresistive memory device and method of operating same using ferroelectric-controlled exchange coupling

MEMORY AND ELECTRONIC DEVICE

SPIN TORQUE OSCILLATOR (STO) SENSORS USED IN NUCLEIC ACID SEQUENCING ARRAYS AND DETECTION SCHEMES FOR NUCLEIC ACID SEQUENCING

MAGNETOELECTRIC SPIN-ORBIT DEVICE WITH IN-PLANE AND PERPENDICULAR MAGNETIC LAYERS AND METHOD OF MANUFACTURING SAME

MAGNETIC TUNNEL JUNCTION ELEMENT AND METHOD FOR MANUFACTURING THE SAME

Magnetoresistive effect element

MAGNETIC MEMORY DEVICES HAVING A LOW SWITCHING VOLTAGE

Synthetic antiferromagnet, magnetic tunneling junction device including the synthetic antiferromagnet, and memory device including the magnetic tunneling junction device

MAGNETIC PROPERTY MEASURING SYSTEM, A METHOD FOR MEASURING MAGNETIC PROPERTIES, AND A METHOD FOR MANUFACTURING A MAGNETIC MEMORY DEVICE USING THE SAME

Free-layer Design for a Voltage Control of Magnetic Anisotropy Magnetic Random Access Memory Device

SPINTRONIC NANODEVICE FOR LOW-POWER, CELLULAR-LEVEL, MAGNETIC NEUROSTIMULATION

Logic element using spin-orbit torque and magnetic tunnel junction structure

Crystal seed layer for magnetic random access memory (MRAM)

Voltage controlled magnetic anisotropy (VCMA) memory devices including platinum containing layer in contact with free layer

SPIN-ORBIT TORQUE DEVICE AND MANUFACTURING METHOD THEREOF

Magnetoresistive element having a nano-current-channel structure

Stacked spin-orbit-torque magnetoresistive random-access memory

Magnetic memory device

Magnetic tunnel junction (MTJ) element and its fabrication process

Magnetic laminated film, magnetic memory element, magnetic memory, and artificial intelligence system

Magnetoresistive memory device

Magnetic tunneling junction device and memory device including the same

PERPENDICULAR MTJ ELEMENT HAVING A CUBE-TEXTURED REFERENCE LAYER AND METHODS OF MAKING THE SAME

Voltage-controlled magnetic anisotropy memory device including an anisotropy-enhancing dust layer and methods for forming the same

Voltage-controlled magnetic anisotropy memory device including an anisotropy-enhancing dust layer and methods for forming the same

Low power MTJ-based analog memory device

Core magnetization reversal method of skyrmion and data storage device using the method

Nitride capping layer for spin torque transfer (STT) magnetoresistive random access memory (MRAM)

Magnetic memory element incorporating dual perpendicular enhancement layers

MRAM stacks and memory devices

Methods of forming perpendicular magnetoresistive elements using sacrificial layers

MAGNETOELECTRIC SPIN ORBIT LOGIC TRANSISTOR WITH A SPIN FILTER

Bidirectional Selector Device for Memory Applications

Interlayer exchange coupled multiplier

Storage element and storage apparatus

Magnetic storage device

Ferrimagnetic Heusler compounds with high spin polarization

Magnetic memory using spin-orbit torque

Method for manufacturing a magnetic random-access memory device using post pillar formation annealing

Magnetic tunnel junction with low defect rate after high temperature anneal for magnetic device applications

Spin current magnetization rotational element

Spin memory encryption

SPIN CURRENT MAGNETIZATION ROTATIONAL ELEMENT, MAGNETORESISTANCE EFFECT ELEMENT, AND MAGNETIC MEMORY

Spin diode devices

Interlayer exchange coupled adder

Warped magnetic tunnel junctions and bit-patterned media

Spin-orbit torque (SOT)-based magnetic tunnel junction and method of fabricating the same

Magnetoresistive element having a giant interfacial perpendicular magnetic anisotropy and method of making the same

Resonant synthetic antiferromagnet reference layered structure

Electronic device and method for fabricating the same

High retention storage layer using ultra-low RA MgO process in perpendicular magnetic tunnel junctions for MRAM devices

Magnetoresistive element having a giant interfacial perpendicular magnetic anisotropy

Nano-rod spin orbit coupling based magnetic random access memory with shape induced perpendicular magnetic anisotropy

Spin-transfer torque magnetoresistive memory device with a free layer stack including multiple spacers and methods of making the same

Magnetic tunnel junction element and magnetoresistive memory device

Magnetic memory device

Techniques for fiber tip re-imaging in LIDAR systems

Magnetic laminated film, magnetic memory element, and magnetic memory

Magnetic memory device and magnetic memory apparatus

Magnetic memory device including magnetoresistance effect element

Dipole-coupled spin-orbit torque structure

Magnetoresistive stack/structure with one or more transition metals in an insertion layer for a memory and methods therefor

Memory cell having a free ferromagnetic material layer with a curved, non-planar surface and methods of making such memory cells

Composite seed structure to improve PMA for perpendicular magnetic pinning

Spin-orbit torque device, method for fabricating a spin-orbit torque device and method for switching a switchable magnetization of a spin-orbit torque device

STT-SOT hybrid magnetoresistive element and manufacture thereof

Methods of manufacturing three-dimensional arrays with MTJ devices including a free magnetic trench layer and a planar reference magnetic layer

MAGNETIC MEMORY DEVICE

Spinel containing magnetic tunnel junction and method of making the same

Magnetic tunnel junction devices including a free magnetic trench layer and a planar reference magnetic laver

Magnetic memory device and method for fabricating the same

Multi terminal device stack formation methods

Domain wall moving element, domain wall moving type magnetic recording element and magnetic recording array

Seed layer for multilayer magnetic materials

MAGNETIC RECORDING ARRAY, PRODUCT-SUM CALCULATOR, AND NEUROMORPHIC DEVICE

SPIN-CURRENT MAGNETIZATION REVERSAL ELEMENT, MAGNETORESISTANCE EFFECT ELEMENT, AND MAGNETIC MEMORY

Reduction of capping layer resistance area product for magnetic device applications

Magnet structure, rotational angle detector, and electric power steering device

Composite multi-stack seed layer to improve PMA for perpendicular magnetic pinning

Magnetic tunnel junction structures and related methods

Semiconductor memory structure with magnetic tunneling junction stack and method for forming the same

Magnetoresistive memory device including a plurality of reference layers

Switching of perpendicularly magnetized nanomagnets with spin-orbit torques in the absence of external magnetic fields

Bidirectional selector device for memory applications

Magnetic tunnel junction and magnetic memory device comprising the same

Perpendicular STTM multi-layer insert free layer

MAGNETORESISTIVE STACK AND METHODS THEREFOR

Magnetic tunneling junction element with a composite capping layer and magnetoresistive random access memory device using the same

Reimaging in a lidar system

Tunnel magnetoresistance sensor devices and methods of forming the same

Assisted write method for magnetic random access memory

Magnetoresistive memory device including a reference layer side dielectric spacer layer

Magnetic layer for magnetic random access memory (MRAM) by moment enhancement

Magnetic structure for magnetic device

Magnetoresistive memory device including a magnesium containing dust layer

Minimal thickness synthetic antiferromagnetic (SAF) structure with perpendicular magnetic anisotropy for STT-MRAM

Dual magnetic tunnel junction stack

Magnetoresistive effect element, magnetic memory, magnetization rotation method, and spin current magnetization rotational element

Magnetic junctions having enhanced tunnel magnetoresistance and utilizing heusler compounds

Nitride Diffusion Barrier Structure for Spintronic Applications

Magnetic memory devices and methods of fabrication

Storage element

Stacked structure, magnetoresistive effect element, magnetic head, sensor, high frequency filter, and oscillator

Magnetic memory element incorporating dual perpendicular enhancement layers

Magnetic memory using spin-orbit torque

Magnetoresistive memory device including a high dielectric constant capping layer and methods of making the same

Magnetoresistive memory device including a high dielectric constant capping layer and methods of making the same

Nanosecond non-destructively erasable magnetoresistive random-access memory

Magnetoresistive element, magnetic memory device, and writing and reading method for magnetic memory device

Magnetic tunnel junction element with a robust reference layer

Spin-orbit torque-based switching device and method of fabricating the same

Magnetic property measuring system, a method for measuring magnetic properties, and a method for manufacturing a magnetic memory device using the same

Magnetic device with a hybrid free layer stack

Magnetoresistive element and magnetic memory

Electronic device and method for fabricating the same

Electronic device

Magnetic structures with tapered edges

Measurement of MTJ in a compact memory array

Magnetic element

Stray field robust XMR sensor using perpendicular anisotropy

Magnetoresistive memory device

Magnetic device which improves write error rate while maintaining retention properties

Spin-orbit torque magnetoresistive random access memory with magnetic field-free current-induced perpendicular magnetization reversal

Spin-transfer torque magnetoresistive memory device with a free layer stack including multiple spacers and methods of making the same

Storage element and storage apparatus

Magnetic memory device

Magnetic memory device including a free layer and a pinned layer

Dual magnetic tunnel junction (DMTJ) stack design

Magnetic memory device having a ferromagnetic element

Magnetic memory structures using electric-field controlled interlayer exchange coupling (IEC) for magnetization switching

Magnetic memory devices for reducing electrical shorts between magnetic tunnel junction patterns

Magnetic tunnel junction with low defect rate after high temperature anneal for magnetic device applications

Spin torque device having a spin current polarized at a canting angle of out-of-plane spin

Memory device containing ovonic threshold switch material thermal isolation and method of making the same

Semiconductor device and method of making the same

Semiconductor memory device and semiconductor memory manufacturing apparatus

Magnetic multi-layers containing MgO sublayers as perpendicularly magnetized magnetic electrodes for magnetic memory technology

Spin logic device based on spin-charge conversion and spin logic array using the same

MRAM stacks, MRAM devices and methods of forming the same

METHOD FOR MANUFACTURING A SELF-ALIGNED MAGNETIC MEMORY ELEMENT WITH RU HARD MASK

Method for manufacturing a magnetic memory element using Ru and diamond like carbon hard masks

Spin torque oscillator (STO) sensors used in nucleic acid sequencing arrays and detection schemes for nucleic acid sequencing

SPIN ORBIT MEMORY DEVICES WITH ENHANCED TUNNELING MAGNETORESISTANCE RATIO (TMR) AND METHODS OF FABRICATION

Two terminal spin orbit memory devices and methods of fabrication

Magnetic memory devices with enhanced tunnel magnetoresistance ratio (TMR) and methods of fabrication

Multi-state memory and method for manufacturing the same

Magnetoresistive effect element with nonmagnetic spacer layer including an aluminum alloy

MAGNETIC DEVICE

Semiconductor storage device including variable resistance elements

Nonvolatile storage device

Magnetic storage device

Magnetic detection circuit, MRAM and operation method thereof

Switching of perpendicularly magnetized nanomagnets with spin-orbit torques in the absence of external magnetic fields

Spin-orbit torque magnetic memory device using alternating current

Nitride capping layer for spin torque transfer (STT) magnetoresistive random access memory (MRAM)

Spin-transfer torque MRAM with a negative magnetic anisotropy assist layer and methods of operating the same

Storage element

Perpendicular spin transfer torque MRAM memory cell with cap layer to achieve lower current density and increased write margin

Nitride diffusion barrier structure for spintronic applications

Domain wall motion type magnetic recording element

MTJ PILLAR HAVING TEMPERATURE-INDEPENDENT DELTA

Magnetic recording array and magnetic recording device

Magnetic tunnel junction including a free layer structure and magnetic memory device comprising the same

Method for manufacturing a magnetic random-access memory device using post pillar formation annealing

Tunable tetragonal ferrimagnetic heusler compound with PMA and high TMR

Magnetic memory device

Magnetic memory element incorporating perpendicular enhancement layer

Magnetic tunnel junction ring oscillator with tunable frequency and methods for operating the same

Perpendicular magnetoresistive elements

Magnetic element

Stray field robust xMR sensor using perpendicular anisotropy

Magnetoresistive random access memory and method for manufacturing the same

Antiferromagnet based spin orbit torque memory device

Magnetic memory using spin-orbit torque

Ferromagnetic multilayer film, magnetoresistance effect element, and method for manufacturing ferromagnetic multilayer film

Magnetic memory device

Spin-transfer torque MRAM with a negative magnetic anisotropy assist layer and methods of operating the same

Superconducting switch having a persistent and a non-persistent state

Storage device, storage apparatus, magnetic head, and electronic apparatus

Magnetic memory device

Storage element and storage apparatus

Transition metal dichalcogenide based spin orbit torque memory device with magnetic insulator

Hybrid oxide/metal cap layer for boron-free free layer

SPIN-ORBIT TORQUE MAGNETORESISTIVE RANDON ACCESS MEMORY AND METHOD AND APPARATUS FOR WRITING THE SAME

Fully compensated synthetic ferromagnet for spintronics applications

Magnetic tunnel junction device and magnetic resistance memory device

Apparatus for spin injection enhancement and method of making the same

Spin-orbit-torque type magnetization rotating element, spin-orbit-torque type magnetoresistance effect element, and magnetic memory

Magnetic tunnel junction structures and related methods

LIDAR system with fiber tip reimaging

Magnetoresistive effect element

Magnetic property measuring system, a method for measuring magnetic properties, and a method for manufacturing a magnetic memory device using the same

Switching of perpendicularly magnetized nanomagnets with spin-orbit torques in the absence of external magnetic fields

Multi terminal device stack formation methods

Magnetic random access memory assisted devices and methods of making

Defect propagation structure and mechanism for magnetic memory

Defect injection structure and mechanism for magnetic memory

Magnetic tunnel junction with low series resistance

Crystal seed layer for magnetic random access memory (MRAM)

Seed layer for multilayer magnetic materials

Dual magnetic tunnel junction (DMTJ) stack design

Magnetoresistive effect element, magnetic memory, magnetization rotation method, and spin current magnetization rotational element

Nano-rod spin orbit coupling based magnetic random access memory with shape induced perpendicular magnetic anisotropy

Semiconductor storage device

Spin current assisted magnetoresistance effect device

Magnetic device

Spin current magnetization rotational magnetic element, spin current magnetization rotational magnetoresistance effect element, and magnetic memory

Magnetic head and magnetic recording and reproducing device

PERPENDICULAR MRAM FREE LAYER WITH NB OXIDE CONTAINING CAPPING LAYER

Spin-orbit torque (SOT) magnetic tunnel junction (MTJ) (SOT-MTJ) devices employing perpendicular and in-plane free layer magnetic anisotropy to facilitate perpendicular magnetic orientation switching, suitable for use in memory systems for storing data

Assisted write method for MRAM testing and field applications

Magnetic field sensing device

Avoiding Oxygen Plasma Damage During Hard Mask Etching in Magnetic Tunnel Junction (MTJ) Fabrication Process

MAGNETIC TUNNEL JUNCTION ELEMENT WITH A ROBUST REFERENCE LAYER

Method of manufacturing high annealing temperature perpendicular magnetic anisotropy structure for magnetic random access memory

Spin current magnetization rotational element, magnetoresistance effect element and magnetic memory

Systems and methods for optimizing magnetic torque and pulse shaping for reducing write error rate in magnetoelectric random access memory

Storage element

Magnetic wall utilization-analog memory element and magnetic wall utilization analog memory

INTEGRATION OF TOP SPIN ORBIT ELECTRODE IN MAGNETIC RANDOM ACCESS MEMORY DEVICES USING ATOMIC LATER ETCHING

Conductive alloy layer in magnetic memory devices and methods of fabrication

Spin orbit torque (SOT) memory devices and methods of fabrication

SYSTEMS AND METHODS FOR MITIGATING ENCROACHMENT IN MAGNETORESISTIVE DEVICES

Magnetic tunnel junction (MTJ) devices with a synthetic antiferromagnet (SAF) structure including a magnetic skyrmion

Multilayer free magnetic layer structure for spin-based magnetic memory

Spin orbit torque (SOT) memory devices and their methods of fabrication

Multi-level magnetic tunnel junction (MTJ) devices including mobile magnetic skyrmions or ferromagnetic domains

Multilayer device having an improved antiferromagnetic pinning layer and a corresponding manufacturing method

Perpendicular exchange bias with antiferromagnet for spin orbit coupling based memory

Spin orbit coupling memory device with top spin orbit coupling electrode and selector

Magnetoelectric spin orbit logic transistor with a spin filter

Heusler-alloy and ferrimagnet based magnetic domain-wall devices for artificial neural network applications

Stress sensor

Magnetoresistive stack/structure and methods therefor

Spin-current magnetization reversal element, magnetoresistance effect element, and magnetic memory

Tunnel magnetoresistive effect element, magnetic memory, and built-in memory

Tunnel magnetoresistive effect element and magnetic memory

Magnetic domain wall displacement type magnetic recording element and magnetic recording array

Magnetoresistive stacks and methods therefor

Random number generator, random number generation device, neuromorphic computer, and quantum computer

Spin orbit torque (SOT) memory devices with enhanced tunnel magnetoresistance ratio and their methods of fabrication

Methods of manufacturing three-dimensional arrays with MTJ devices including a free magnetic trench layer and a planar reference magnetic layer

Magnetic tunnel junction devices including a free magnetic trench layer and a planar reference magnetic layer

Magnetic memory and memory system

PSTTM device with multi-layered filter stack

Reduction of capping layer resistance area product for magnetic device applications

Engineered barrier layer interface for high speed spin-transfer torque magnetic random access memory

Magnetic memory device