206586 ⎘
Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging; Electron or ion beam tubes for processing objects; Controlling tubes; Correction during exposure pre-calculated
MULTIPLE CHARGED PARTICLE BEAM WRITING METHOD, MULTIPLE CHARGED PARTICLE BEAM WRITING APPARATUS, AND NON-TRANSITORY COMPUTER-READABLE STORAGE MEDIUM STORING PROGRAM THEREIN
#2Correction of Thermal Expansion in a Lithographic Device
#3CHARGED PARTICLE BEAM WRITING METHOD AND CHARGED PARTICLE BEAM WRITING APPARATUS
#4Multi-beam writing method and multi-beam writing apparatus
#5Multi-beam writing method and multi-beam writing apparatus
#6Bias correction for lithography
#7Multi charged particle beam writing apparatus and multi charged particle beam writing method
#8Exposure apparatus and exposure method, lithography method, and device manufacturing method
#9Bias correction for lithography
#10Process window analysis
#11CHARGED PARTICLE BEAM WRITING APPARATUS AND CHARGED PARTICLE BEAM WRITING METHOD
#12Charged particle beam writing apparatus, method of adjusting beam incident angle to target object surface, and charged particle beam writing method
#13Exposure apparatus and exposure method, lithography method, and device manufacturing method
#14Ion implantation method, ion implantation apparatus and semiconductor device
#15Multi charged particle beam writing apparatus and multi charged particle beam writing method
#16CHARGED PARTICLE BEAM WRITING APPARATUS AND CHARGED PARTICLE BEAM WRITING METHOD
#17Method of performing dose modulation, in particular for electron beam lithography
#18Charged particle beam apparatus and positional displacement correcting method of charged particle beam
#19Charged particle beam writing apparatus, method of adjusting beam incident angle to target object surface, and charged particle beam writing method
#20Bias correction for lithography
#21Ion milling device and ion milling method
#22Method for generating parameter pattern, ion implantation method and feed forward semiconductor manufacturing method
#23Method for correcting drift of accelerating voltage, method for correcting drift of charged particle beam, and charged particle beam writing apparatus
#24Charged particle radiation device and specimen preparation method using said device
#25Charged particle beam writing apparatus, method of adjusting beam incident angle to target object surface, and charged particle beam writing method
#26Cathode operating temperature adjusting method, and writing apparatus
#27Charged particle beam writing apparatus, method of adjusting beam incident angle to target object surface, and charged particle beam writing method
#28Charged particle beam writing apparatus and charged particle beam writing method
#29System and method of dosage profile control
#30CHARGED PARTICLE BEAM DRAWING APPARATUS AND ELECTRICAL CHARGING EFFECT CORRECTION METHOD THEREOF
#31Electron beam exposure apparatus and electron beam exposure method
#32CHARGED PARTICLE BEAM MICROSCOPE AND MEASURING METHOD USING SAME
#33Charged particle beam writing apparatus and charged particle beam writing method
#34System and method of dosage profile control
#35Charged particle beam pattern forming apparatus and charged particle beam pattern forming method
#36Scanning electron microscope
#37Charged particle beam writing apparatus and charged particle beam writing method
#38Multi-column electron beam lithography apparatus and electron beam trajectory adjustment method for the same
#39CHARGED PARTICLE BEAM DRAWING APPARATUS AND ELECTRICAL CHARGING EFFECT CORRECTION METHOD THEREOF
#40Pattern modification schemes for improved FIB patterning
#41Deflection signal compensation for charged particle beam
#42Charged-particle beam writing method and charged-particle beam writing apparatus
#43Manufacturing system for semiconductor device capable of controlling variation in electrical property of element in wafer surface and method for manufacturing the semiconductor device
#44Method and system for multi-pass correction of substrate defects
#45Methods for modifying features of a workpiece using a gas cluster ion beam
#46Scanning electron microscope
#47AREA BASED OPTICAL PROXIMITY CORRECTION IN RASTER SCAN PRINTING
#48Charged-particle beam writing method
#49Charged particle beam writing apparatus and method thereof
#50CHARGED PARTICLE BEAM WRITING APPARATUS AND METHOD
#51Charged-particle beam lithography with grid matching for correction of beam shot position deviation
#52Non-uniform ion implantation
#53Electron beam lithography apparatus and method for compensating for electron beam misalignment
#54Charged particle beam irradiation method and charged particle beam apparatus
#55Deflection signal compensation for charged particle beam
#56Electron beam irradiation apparatus, electron beam irradiation method, and apparatus for and method of manufacturing disc-shaped object
#57Ion beam implant current, spot width and position tuning
#58Specification determining method, projection optical system making method and adjusting method, exposure apparatus and making method thereof, and computer system
#59Area based optical proximity correction in raster scan printing
#60Electron beam irradiation apparatus, electron beam irradiation method, and apparatus for and method of manufacturing disc-shaped object
#61Charged-particle beam lithographic system
#62Method of generating mask distortion data, exposure method and method of producing semiconductor device