Patents-Review.com
ClassID:

206676 ⎘

H01J2237/3327 - CPC Classification

Classification description:

Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging; Processing objects by plasma generation characterised by the type of processing; Coating; Problems associated with coating Coating high aspect ratio workpieces

Recent Application in this class:
#1
20260112577
2026-04-23

SUBSTRATE PROCESSING APPARATUS

 #2
20260062808
2026-03-05

ATOMIC LAYER DEPOSITION APPARATUS

 #3
20250054760
2025-02-13

CARBON MASK DEPOSITION

 #4
20240363315
2024-10-31

ADJUSTABLE DE-CHUCKING VOLTAGE

 #5
20230081817
2023-03-16

HIGH ASPECT RATIO ETCH WITH INFINITE SELECTIVITY

 #6
20220375721
2022-11-24

RADIO FREQUENCY (RF) POWER IMBALANCING IN A MULTI-STATION INTEGRATED CIRCUIT FABRICATION CHAMBER

 #7
20210384040
2021-12-09

Methods for depositing dielectric material

 #8
20200312625
2020-10-01

SUBSTRATE PROCESSING APPARATUS

 #9
20200216959
2020-07-09

HIGH ASPECT RATIO DEPOSITION

 #10
20200090946
2020-03-19

Methods for depositing dielectric material

 #11
20190393031
2019-12-26

Processing method and plasma processing apparatus

 #12
20190221402
2019-07-18

Plasma beam penetration of millimeter scale holes with high aspect ratios

 #13
20180327893
2018-11-15

SELF-IONIZED AND INDUCTIVELY-COUPLED PLASMA FOR SPUTTERING AND RESPUTTERING

 #14
20180247826
2018-08-30

Processing method and plasma processing apparatus

 #15
20160056077
2016-02-25

Method for void-free cobalt gap fill

 #16
20150210548
2015-07-30

IN-LINE MANUFACTURE OF CARBON NANOTUBES

 #17
20140305802
2014-10-16

Self-ionized and inductively-coupled plasma for sputtering and resputtering

 #18
20120028461
2012-02-02

Methods for depositing metal in high aspect ratio features

 #19
20110165347
2011-07-07

Dielectric film formation using inert gas excitation

 #20
20110151673
2011-06-23

Plasma etching method, plasma etching device, and method for producing photonic crystal

 #21
20090321247
2009-12-31

IONIZED PHYSICAL VAPOR DEPOSITION (iPVD) PROCESS

 #22
20090233438
2009-09-17

SELF-IONIZED AND INDUCTIVELY-COUPLED PLASMA FOR SPUTTERING AND RESPUTTERING

 #23
20080110747
2008-05-15

Self-ionized and inductively-coupled plasma for sputtering and resputtering

 #24
20080038919
2008-02-14

Plasma sputtering film deposition method and equipment

 #25
20060029745
2006-02-09

High throughput ILD fill process for high aspect ratio gap fill

 #26
20050279624
2005-12-22

Highly ionized PVD with moving magnetic field envelope for uniform coverage of feature structure and wafer

 #27
20050255691
2005-11-17

Self-ionized and inductively-coupled plasma for sputtering and resputtering

 #28
20050247554
2005-11-10

Pulsed magnetron for sputter deposition

 #29
20050211545
2005-09-29

Ionized physical vapor deposition (iPVD) process

 #30
20050205414
2005-09-22

Method and apparatus for improving sidewall coverage during sputtering in a chamber having an inductively coupled plasma

 #31
20050199491
2005-09-15

Shields usable with an inductively coupled plasma reactor

 #32
20050006222
2005-01-13

Self-ionized and inductively-coupled plasma for sputtering and resputtering