206690 ⎘
Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging; Processing objects by plasma generation characterised by the type of processing; Changing physical properties of treated surfaces Plasma source implantation
DOPED SILICON OR BORON LAYER FORMATION
#2MULTI-PLENUM GAS MANIFOLDS FOR SUBSTRATE PROCESSING SYSTEMS
#3METHODS AND SYSTEM FOR DUTY FACTOR RAMPED TIMED ION IMPLANT MATCHING
#4RF BLOCKER FOR UNIFORMITY CONTROL
#5LOW ENERGY TREATMENT TO PASSIVATE SiC SUBSTRATE DEFECTS
#6Shield Ring Mounting Using Compliant Hardware
#7SYSTEM AND METHOD FOR ION SOURCE TEMPERATURE CONTROL USING SYMMETRIC OR ASYMMETRIC APPLICATION OF FORCE
#8METHOD FOR FORMING HIGHLY UNIFORM DIELECTRIC FILM
#9TARGET PROCESSING DEVICE AND TARGET PROCESSING METHOD
#10CO-DOPING TO CONTROL WET ETCH RATE OF FCVD OXIDE LAYERS
#11Plasma ion processing of substrates
#12Extreme edge uniformity control
#13Fluorine ion implantation system with non-tungsten materials and methods of using
#14Fluorine ion implantation method and system
#15Extraction apparatus and system for high throughput ion beam processing
#16SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING SEMICONDUCTOR DEVICE
#17ION IMPLANT PLASMA FLOOD GUN PERFORMANCE BY USING TRACE IN SITU CLEANING GAS IN SPUTTERING GAS MIXTURE
#18Plasma generation for ion implanter
#19RF ion source with dynamic volume control
#20Plasma doping using a solid dopant source
#21LARGE AREA ENERGETIC ION SOURCE
#22Extreme edge uniformity control
#23DOPING METHOD, DOPING APPARATUS, AND SEMICONDUCTOR ELEMENT MANUFACTURING METHOD
#24Ion implant system having grid assembly
#25APPARATUS AND TECHNIQUES FOR TIME MODULATED EXTRACTION OF AN ION BEAM
#26Ion generator and method of controlling ion generator
#27Ion collector for use in plasma systems
#28Boron-containing dopant compositions, systems and methods of use thereof for improving ion beam current and performance during boron ion implantation
#29SEMICONDUCTOR ELEMENT MANUFACTURING METHOD
#30Plasma generator and thermal electron emitter
#31PLASMA-BASED MATERIAL MODIFICATION WITH NEUTRAL BEAM
#32Grid for plasma ion implant
#33In situ control of ion angular distribution in a processing apparatus
#34Ion implant system having grid assembly
#35DEVICE FOR ION IMPLANTATION
#36REMOTE DELIVERY OF CHEMICAL REAGENTS
#37Workpiece Processing Method And Apparatus
#38Multi-step ion implantation
#39Bias voltage frequency controlled angular ion distribution in plasma processing
#40Ion implanter provided with a plurality of plasma source bodies
#41Plasma activated conformal dielectric film deposition
#42In situ control of ion angular distribution in a processing apparatus
#43METHOD FOR INJECTING DOPANT INTO SUBSTRATE TO BE PROCESSED, AND PLASMA DOPING APPARATUS
#44Pinched plasma bridge flood gun for substrate charge neutralization
#45Method for implementing low dose implant in a plasma system
#46Modified polysilazane film and method for producing gas barrier film
#47Patterning of magnetic thin film using energized ions
#48Method for ion implant using grid assembly
#49Ion implant system having grid assembly
#50Plasma activated conformal dielectric film deposition
#51Plasma grid implant system for use in solar cell fabrications
#52Patterning of magnetic thin film using energized ions
#53Ion angle detector
#54RF detector with double balanced linear mixer and corresponding method of operation
#55RF ion source with dynamic volume control