205321 ⎘
Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof; Gas-filled discharge tubes; Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources; Localised processing Treating the edge of the workpieces
APPARATUS FOR EDGE CONTROL DURING PLASMA PROCESSING
#2SUBSTRATE EDGE PROFILE TREATMENT
#3GRINDING APPARATUS
#4ION GENERATOR AND ION IMPLANTER
#5ELECTRODE-DIELECTRIC NOZZLE FOR PLASMA PROCESSING
#6SEMICONDUCTOR SUBSTRATE BEVEL CLEANING
#7APPARATUS FOR TREATING SUBSTRATE AND METHOD FOR ALIGNING DIELECTRIC PLATE USING THE SAME
#8SUBSTRATE PROCESSING APPARATUS
#9PLASMA GENERATOR FOR EDGE UNIFORMITY
#10Ion generator and ion implanter
#11CONTROL OF WAFER BOW IN MULTIPLE STATIONS
#12TUNABLE UPPER PLASMA-EXCLUSION-ZONE RING FOR A BEVEL ETCHER
#13Apparatus for Edge Control During Plasma Processing
#14Arcing Reduction in Wafer Bevel Edge Plasma Processing
#15Semiconductor substrate bevel cleaning
#16MOVEABLE EDGE RINGS FOR SUBSTRATE PROCESSING SYSTEMS
#17Ion generator and ion implanter
#18SUPPORT UNIT, APPARATUS FOR TREATING SUBSTRATE, AND METHOD FOR TREATING SUBSTRATE
#19Control of wafer bow in multiple stations
#20SUBSTRATE SUPPORT STAGE, PLASMA PROCESSING SYSTEM, AND METHOD OF MOUNTING EDGE RING
#21Plasma source and method of operating the same
#22Substrate processing apparatus and substrate processing method
#23Tunable upper plasma-exclusion-zone ring for a bevel etcher
#24EDGE RING ASSEMBLY FOR A SUBSTRATE SUPPORT IN A PLASMA PROCESSING CHAMBER
#25Apparatus and method for treating substrate
#26Plasma density control on substrate edge
#27Substrate processing method
#28Ion generator and ion implanter
#29Control of wafer bow in multiple stations
#30Edge ring assembly for a substrate support in a plasma processing chamber
#31Substrate side-deposition apparatus
#32Systems and methods for achieving a pre-determined factor associated with an edge region within a plasma chamber by synchronizing main and edge RF generators
#33Geometrically selective deposition of dielectric films utilizing low frequency bias
#34Ultra-localized and plasma uniformity control in a plasma processing system
#35Plasma processing apparatus and plasma processing method
#36Plasma density control on substrate edge
#37Processing method
#38Control of water bow in multiple stations
#39Edge exclusion control with adjustable plasma exclusion zone ring
#40Systems and methods for achieving a pre-determined factor associated with an edge region within a plasma chamber by synchronizing main and edge RF generators
#41Systems and Methods for In-Situ Wafer Edge and Backside Plasma Cleaning
#42Technique to deposit sidewall passivation for high aspect ratio cylinder etch
#43Selective processing of a workpiece
#44Edge exclusion control with adjustable plasma exclusion zone ring
#45Apparatus for manufacturing display device and method of manufacturing display device
#46REAL-TIME EDGE ENCROACHMENT CONTROL FOR WAFER BEVEL
#47Tunable upper plasma-exclusion-zone ring for a bevel etcher
#48Hybrid feature etching and bevel etching systems
#49Etching apparatus
#50Plasma processing chamber for bevel edge processing
#51Edge exclusion control with adjustable plasma exclusion zone ring
#52PROCESSING APPARATUS
#53High pressure bevel etch process
#54Plasma processing chamber for bevel edge processing
#55Methods of and apparatus for protecting a region of process exclusion adjacent to a region of process performance in a process chamber