ClassID:

205324

H01J37/32412 - page 2 - CPC Classification

Classification description:

Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof; Gas-filled discharge tubes; Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources Plasma immersion ion implantation

Recent Application in this class:
#301
20060121707
2006-06-08

Ion implantation system and method of monitoring implant energy of an ion implantation device

#302
20060121704
2006-06-08

Plasma ion implantation system with axial electrostatic confinement

#303
20060099830
2006-05-11

Plasma implantation using halogenated dopant species to limit deposition of surface layers

#304
20060088655
2006-04-27

RF measurement feedback control and diagnostics for a plasma immersion ion implantation reactor

#305
20060073683
2006-04-06

Plasma immersion ion implantation process using a capacitively couple plasma source having low dissociation and low minimum plasma voltage

#306
20060063361
2006-03-23

Plasma-assisted doping

#307
20060063360
2006-03-23

Technique for boron implantation

#308
20060060796
2006-03-23

Method and apparatus for plasma source ion implantation in metals and non-metals

#309
20060057304
2006-03-16

Biased pulse DC reactive sputtering of oxide films

#310
20060057283
2006-03-16

Biased pulse DC reactive sputtering of oxide films

#311
20060054496
2006-03-16

Biased pulse DC reactive sputtering of oxide films

#312
20060040499
2006-02-23

In situ surface contaminant removal for ion implanting

#313
20060040065
2006-02-23

Method for the surface activation on the metalization of electronic devices

#314
20060019477
2006-01-26

Plasma immersion ion implantation reactor having an ion shower grid

#315
20060019039
2006-01-26

Plasma immersion ion implantation reactor having multiple ion shower grids

#316
20060013964
2006-01-19

Apparatus and method for focused electric field enhanced plasma-based ion implantation

#317
20060006348
2006-01-12

Apparatus and method for doping

#318
20050287307
2005-12-29

Etch and deposition control for plasma implantation

#319
20050260837
2005-11-24

Methods for stable and repeatable ion implantation

#320
20050260354
2005-11-24

In-situ process chamber preparation methods for plasma ion implantation systems

#321
20050205212
2005-09-22

RF Plasma Source With Conductive Top Section

#322
20050205211
2005-09-22

Plasma immersion ion implantion apparatus and method

#323
20050202659
2005-09-15

Ion implantation of high-k materials in semiconductor devices

#324
20050202624
2005-09-15

Plasma ion implantation system

#325
20050170669
2005-08-04

Plasma processing method and apparatus

#326
20050127036
2005-06-16

Method of cleaning a reaction chamber

#327
20050070073
2005-03-31

Silicon-on-insulator wafer transfer method using surface activation plasma immersion ion implantation for wafer-to-wafer adhesion enhancement

#328
20050061251
2005-03-24

Apparatus and method for metal plasma immersion ion implantation and metal plasma immersion ion deposition

#329
20050051271
2005-03-10

Plasma immersion ion implantation system including an inductively coupled plasma source having low dissociation and low minimum plasma voltage

#330
20050048802
2005-03-03

Biased pulse DC reactive sputtering of oxide films

#331
17037025
2022-03-01

Ion angle detector

#332
15341040
2018-02-20

RF ion source with dynamic volume control

#333
14592509
2016-05-17

Self-aligned process