207038 ⎘
Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof; Manufacture or treatment of semiconductor devices or of parts thereof; Forming layers; Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process formation of epitaxial layers by a deposition process
Semiconductor Device With Selective Area Epitaxy Growth Utilizing a Mask to Suppress or Enhance Growth at the Edges
#2DIELECTRIC INNER SPACERS IN MULTI-GATE FIELD-EFFECT TRANSISTORS
#3CARRIER WAFER DEBONDING PROCESS AND METHOD
#4WAFER MOUNTING APPARATUS, SEMICONDUCTOR MANUFACTURING APPARATUS, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE
#5GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING INSULATOR FIN ON INSULATOR SUBSTRATE
#6SUBSTRATE STRIPPING METHOD AND EPITAXIAL WAFER
#7METHOD OF PROCESSING A SEMICONDUCTOR WAFER
#8CARRIER WAFER DEBONDING PROCESS AND METHOD
#9WAFER CASSETTE LOADING AND UNLOADING SYSTEM FOR AN EPITAXIAL REACTION AND AN EPITAXIAL REACTOR
#10INCREASE THE VOLUME OF EPITAXY REGIONS
#11CURRENT COLLAPSE REDUCTION USING ALUMINUM NITRIDE BACK BARRIER AND IN-SITU TWO-STEP PASSIVATION
#12BORON NITRIDE LAYER, APPARATUS INCLUDING THE SAME, AND METHOD OF FABRICATING THE BORON NITRIDE LAYER
#13METHOD FOR PRODUCING HETEROEPITAXIAL WAFER
#14EPITAXIAL STRUCTURE FOR SOURCE/DRAIN CONTACT
#15METHOD FOR MANUFACTURING A SEMICONDUCTOR STRUCTURE
#16FINFETS WITH EPITAXY REGIONS HAVING MIXED WAVY AND NON-WAVY PORTIONS
#17VERTICALLY-ORIENTED COMPLEMENTARY TRANSISTOR
#18SEMICONDUCTOR DEVICE, MANUFACTURING METHOD THEREOF, POWER CONVERSION CIRCUIT, AND VEHICLE
#19SOURCE/DRAIN STRUCTURE FOR SEMICONDUCTOR DEVICE
#20SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME
#21SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME
#22COMPOSITE SUBSTRATE AND METHOD FOR MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE STRUCTURE
#23SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
#24Substrate stripping method and epitaxial wafer
#25SEMICONDUCTOR DEVICE WITH A POROUS PORTION, WAFER COMPOSITE AND METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE
#26SUPER JUNCTION TRENCH MOSFET AND METHOD FOR PREPARING SAME
#27DOPING FREE CONNECTION STRUCTURES AND METHODS
#28GROWTH MONITOR SYSTEM AND METHODS FOR FILM DEPOSITION
#29PLASMA PROCESS UNIFORMITY BY WAFER BACK SIDE DOPING
#30Gate-all-around integrated circuit structures having insulator fin on insulator substrate
#31Semiconductor device including epitaxial region
#32SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
#33METHOD FOR PRODUCING A SUBSTRATE FOR THE EPITAXIAL GROWTH OF A LAYER OF A GALLIUM-BASED III-N ALLOY
#34Method for manufacturing metal oxynitride film
#35SEMICONDUCTOR DEVICES AND METHODS OF FORMING THE SAME
#36FinFETs with epitaxy regions having mixed wavy and non-wavy portions
#37SUBSTRATE SUPPORTS, SEMICONDUCTOR PROCESSING SYSTEMS, AND MATERIAL LAYER DEPOSITION METHODS
#38PN JUNCTION
#39Vertically-oriented complementary transistor
#40SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
#41Optimized heteroepitaxial growth of semiconductors
#42GROUP-III ELEMENT NITRIDE SEMICONDUCTOR SUBSTRATE
#43MULTIJUNCTION SOLAR CELLS WITH LIGHT SCATTERING LAYER
#44STANDARD WAFERS, METHOD OF MAKING THE SAME AND CALIBRATION METHOD
#45STRUCTURES AND METHODS FOR PRODUCING AN OPTOELECTRONIC DEVICE
#46Boron nitride layer, apparatus including the same, and method of fabricating the boron nitride layer
#47DEVICES HAVING A TRANSISTOR WITH A MODIFIED CHANNEL REGION
#48DIELECTRIC INNER SPACERS IN MULTI-GATE FIELD-EFFECT TRANSISTORS
#49CMOS Image Sensor and Method for Forming the Same
#50Semiconductor device and manufacturing method thereof
#51LAYERED STRUCTURE
#52SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME
#53Method of linearized film oxidation growth
#54Growth monitor system and methods for film deposition
#55GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING FIN STACK ISOLATION
#56Optimized heteroepitaxial growth of semiconductors
#57Optimized thick heteroepitaxial growth of semiconductors with in-situ substrate pretreatment
#58Optimized thick heteroepitaxial growth of semiconductors with in-situ substrate pretreatment
#59SILICON WAFER AND EPITAXIAL SILICON WAFER
#60Manufacturing and reuse of semiconductor substrates
#61Semiconductor device including epitaxial electrode layer and dielectric epitaxial structure and method of manufacturing the same
#62TRANSISTOR STRUCTURES WITH REDUCED SOURCE/DRAIN LEAKAGE THROUGH BACKSIDE TREATMENT OF SUBFIN SEMICONDUCTOR MATERIAL
#63Optimized heteroepitaxial growth of semiconductors
#64SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING SYSTEM
#65Optimized heteroepitaxial growth of semiconductors
#66MANUFACTURING METHOD FOR SEMICONDUCTOR SILICON WAFER
#67Source/drain structure for semiconductor device
#68Optimized Heteroepitaxial Growth of Semiconductors
#69Optimized Heteroepitaxial Growth of Semiconductors
#70Optimized Heteroepitaxial Growth of Semiconductors
#71Optimized Heteroepitaxial Growth of Semiconductors
#72Optimized heteroepitaxial growth of semiconductors
#73SEMICONDUCTOR DEVICE AND FABRICATION METHODS THEREOF
#74FIN HEIGHT AND STI DEPTH FOR PERFORMANCE IMPROVEMENT IN SEMICONDUCTOR DEVICES HAVING HIGH-MOBILITY P-CHANNEL TRANSISTORS
#75METHODS FOR FORMING AN EPITAXIAL WAFER
#76Semiconductor device with a porous portion, wafer composite and method of manufacturing a semiconductor device
#77Semiconductor device including epitaxial region
#78EPITAXIAL STRUCTURE FOR SOURCE/DRAIN CONTACT
#79High density logic formation using multi-dimensional laser annealing
#80Optimized heteroepitaxial growth of semiconductors
#81Semiconductor structure and related methods
#82Method for forming ultra-shallow junction
#83POROUS RF SWITCH FOR REDUCED CROSSTALK
#84Gate-all-around integrated circuit structures having insulator FIN on insulator substrate
#85Method for forming chalcogenide thin film
#86FinFETs with epitaxy regions having mixed wavy and non-wavy portions
#87Semiconductor device and method for forming the same
#88Silicon carbide semiconductor device with a contact region having edges recessed from edges of the well region
#89NITRIDE SEMICONDUCTOR SUBSTRATE
#90FinFETs with epitaxy regions having mixed wavy and non-wavy portions
#91FIN HEIGHT AND STI DEPTH FOR PERFORMANCE IMPROVEMENT IN SEMICONDUCTOR DEVICES HAVING HIGH-MOBILITY P-CHANNEL TRANSISTORS
#92SHIELDED GATE TRENCH MOSFET WITH ESD DIODE MANUFACTURED USING TWO POLY-SILICON LAYERS PROCESS
#93Vertically-oriented complementary transistor
#94Semiconductor structure and related methods
#95Epitaxial growth process for semiconductor device and semiconductor device comprising epitaxial layer formed by adopting the same
#96NITRIDE SEMICONDUCTOR SUBSTRATE MANUFACTURING METHOD AND LAMINATED STRUCTURE
#97GAN CRYSTAL AND SUBSTRATE
#98Semiconductor device and manufacturing method thereof
#99HIGHLY-TEXTURED THIN FILMS
#100Epitaxial growth using carbon buffer on substrate
#101Transistor with buried p-field termination region
#102Method for manufacturing gallium nitride semiconductor device
#103Three part source/drain region structure for transistor
#104Method for manufacturing rutile titanium dioxide layer and semiconductor device including the same
#105Method of manufacturing fin spacers having different heights using a polymer-generating etching process
#106Gate-all-around integrated circuit structures having fin stack isolation
#107Gate-all-around integrated circuit structures having insulator fin on insulator substrate
#108FINFET transistor having a doped sub fin structure to reduce channel to substrate leakage
#109Epitaxial growth constrained by a template
#110Transistors with a sectioned epitaxial semiconductor layer
#111Semiconductor structure and method for manufacturing the same
#112Electrostatic discharge protection devices
#113Ingan epitaxy layer and preparation method thereof
#114Semiconductor device with c-shaped channel portion, method of manufacturing the same, and electronic apparatus including the same
#115Self-aligned implants for silicon carbide (SiC) technologies and fabrication method
#116SUSCEPTOR AND CHEMICAL VAPOR DEPOSITION APPARATUS
#117Transient voltage suppressor and method for manufacturing the same
#118Nitride semiconductor substrate, laminate, substrate selection program, substrate data output program, off-angle coordinate map, and methods thereof
#119Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device
#120Semiconductor device including epitaxial region having an extended portion
#121Method for manufacturing SiC epitaxial substrate
#122Method for manufacturing metal oxynitride film
#123Boron nitride layer, apparatus including the same, and method of fabricating the boron nitride layer
#124METHOD FOR FORMING A CHEMICAL GUIDING STRUCTURE ON A SUBSTRATE AND CHEMO-EPITAXY METHOD
#125Arrays of light emitters and methods of forming thereof
#126Integration of epitaxially grown channel selector with two terminal resistive switching memory element
#127Integration of epitaxially grown channel selector with MRAM device
#128SUSCEPTOR, METHOD FOR PRODUCING EPITAXIAL SUBSTRATE, AND EPITAXIAL SUBSTRATE
#129SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
#130Semiconductor material having tunable permittivity and tunable thermal conductivity
#131Method for manufacturing a monocrystalline layer of diamond or iridium material and substrate for epitaxially growing a monocrystalline layer of diamond or iridium material
#132Dielectric inner spacers in multi-gate field-effect transistors
#133Semiconductor device with Selective Area Epitaxy growth utilizing a mask to suppress or enhance growth at the edges
#134Structure of epitaxy on heterogeneous substrate and method for fabricating the same
#135Method and apparatus for depositing a metal containing layer on a substrate
#136Two-terminal biristor with polysilicon emitter layer and method of manufacturing the same
#137Semiconductor device with a porous portion, wafer composite and method of manufacturing a semiconductor device
#138Semiconductor device and manufacturing method thereof
#139Semiconductor substrate, and epitaxial wafer and method for producing same
#140EPITAXIAL GROWTH SUBSTRATE, METHOD OF MANUFACTURING EPITAXIAL GROWTH SUBSTRATE, EPITAXIAL SUBSTRATE, AND SEMICONDUCTOR DEVICE
#141Method for manufacturing semiconductor substrate
#142Semiconductor integrated circuit having a first buried layer and a second buried layer
#143SYSTEMS AND METHODS FOR FABRICATING PHOTOVOLTAIC DEVICES VIA REMOTE EPITAXY
#144Semiconductor device to suppress electric field concentration on insulating protection film
#145SUSCEPTOR AND CHEMICAL VAPOR DEPOSITION APPARATUS
#146Semiconductor structure and method for manufacturing the same
#147Increase the volume of epitaxy regions
#148Metal oxide semiconductor field effect transistor with crystalline oxide layer on a III-V material
#149Method for fabricating a row of MOS transistors
#150Method for producing a semiconductor chip and semiconductor chip
#151Structure and method to form nanosheet devices with bottom isolation
#152Sealed cavity structures with non-planar surface features to induce stress
#153Heterostructure system and method of fabricating the same
#154Integrated epitaxial metal electrodes
#155Contact formation through low-temperature epitaxial deposition in semiconductor devices
#156Contact formation through low-tempearature epitaxial deposition in semiconductor devices
#157Epitaxial structure of N-face AlGaN/GaN, active device, and method for fabricating the same with integration and polarity inversion
#158Electrostatic discharge protection devices
#159Integrated epitaxial metal electrodes
#160Solution deposition method for forming metal oxide or metal hydroxide layer
#161Method for manufacturing a power semiconductor device having a reduced oxygen concentration
#162Semiconductor substrate made of silicon carbide and method for manufacturing same
#163Method for fabricating a row of MOS transistors
#164Tunnel field-effect transistor and method for manufacturing tunnel field-effect transistor
#165Method for producing SiC epitaxial wafer and apparatus for producing SiC epitaxial wafer
#166SEMICONDUCTOR STRUCTURES AND METHOD FOR FABRICATING THE SAME
#167Semiconductor device and method for fabricating the same
#168Integrated epitaxial metal electrodes
#169Epitaxial growth device, production method for epitaxial wafer, and lift pin for epitaxial growth device
#170Transient voltage suppressor and method for manufacturing the same
#171Integrated method for wafer outgassing reduction
#172Method of forming crystalline oxides on III-V materials
#173Semiconductor rectifier and manufacturing method thereof
#174Method for producing a semiconductor chip and semiconductor chip
#175Solution deposition method for forming metal oxide or metal hydroxide layer
#176Light-emitting element and manufacturing method thereof
#177Homoepitaxial tunnel barriers with functionalized graphene-on-graphene and methods of making
#178Process of selective epitaxial growth for void free gap fill
#179Stress assisted wet and dry epitaxial lift off
#180SHALLOW TRENCH ISOLATION REGIONS MADE FROM CRYSTALLINE OXIDES
#181Fin field effect transistor
#182INJECTOR FOR SEMICONDUCTOR EPITAXY GROWTH
#183Method of formation of germanium nanowires on bulk substrates
#184Solution deposition method for forming metal oxide or metal hydroxide layer
#185Fin field effect transistor
#186Method of formation of germanium nanowires on bulk substrates
#187Dimension measurement apparatus calibration standard and method for forming the same
#188Shallow trench isolation regions made from crystalline oxides
#189Semiconductor arrangement and formation thereof
#190METHOD FOR FORMING FIN FIELD EFFECT TRANSISTOR
#191Thin epitaxial silicon carbide wafer fabrication
#192REN semiconductor layer epitaxially grown on REAIN/REO buffer on Si substrate
#193Semiconductor device comprising epitaxially grown semiconductor material and an air gap
#194FinFET design controlling channel thickness
#195Low gate-to-drain capacitance fully merged finFET
#196COATED LINER ASSEMBLY FOR A SEMICONDUCTOR PROCESSING CHAMBER
#197COATED LINER ASSEMBLY FOR A SEMICONDUCTOR PROCESSING CHAMBER
#198Enhanced electron mobility at the interface between GD2O3(100)/N-SI(100)
#199Semiconductor device and method with greater epitaxial growth on 110 crystal plane
#200Flowable films using alternative silicon precursors
#201Semiconductor device, HEMT device, and method of manufacturing semiconductor device
#202Enhanced electron mobility at the interface between GdO(100)/N-Si(100)
#203System and process for high-density, low-energy plasma enhanced vapor phase epitaxy
#204High-K heterostructure
#205Apparatus for manufacturing compound semiconductor, method for manufacturing compound semiconductor, and compound semiconductor
#206FinFET design controlling channel thickness
#207FinFET and method of fabricating the same
#208Power semiconductor device having a thin gate insulating film with high-k dielectric materials and method for manufacturing the same
#209Epitaxial growth of single crystalline MgO on germanium
#210High-k heterostructure
#211SOI wafers having MOoxide layers on a substrate wafer and an amorphous interlayer adjacent the substrate wafer
#212Laminar structure on a semiconductor substrate
#213Semiconductor structure including mixed rare earth oxide formed on silicon
#214MANUFACTURE-FRIENDLY BUFFER LAYER FOR FERROELECTRIC MEDIA
#215Semiconductor device with a high-k gate dielectric and a metal gate electrode
#216INSULATING FILM AND ELECTRONIC DEVICE
#217Insulating film and electronic device
#218Semiconductor structure including mixed rare earth oxide formed on silicon
#219INSULATING FILM AND ELECTRONIC DEVICE
#220INSULATING FILM AND ELECTRONIC DEVICE
#221Semiconductor wafer and process for its production
#222System and process for high-density, low-energy plasma enhanced vapor phase epitaxy
#223Flux assisted solid phase epitaxy
#224METHODS FOR PREPARING CRYSTALLINE FILMS
#225Methods of forming NMOS/PMOS transistors with source/drains including strained materials
#226Semiconductor device with a high-k gate dielectric and a metal gate electrode
#227Insulating film and electronic device
#228Insulating film and electronic device
#229Insulating film and electronic device
#230Structure and method for fabricating GaN devices utilizing the formation of a compliant substrate
#231Substrate for electronic devices, manufacturing method therefor, and electronic device
#232Semiconductor structure including mixed rare earth oxide formed on silicon
#233Insulating film and electronic device
#234Left-ISD-LTSEE {low electrostatic field transistor (LEFT) using implanted S/D and selective low temperature epitaxial extension (ISD-LTSEE)}
#235Optimized thick heteroepitaxial growth of semiconductors with in-situ substrate pretreatment
#236Optimized thick heteroepitaxial growth of semiconductors with in-situ substrate pretreatment
#237Optimized Heteroepitaxial growth of semiconductors
#238Method for manufacturing transistor device
#239Manufacturing method of epitaxial contact structure in semiconductor memory device
#240Semiconductor device and method for fabricating the same
#241Semiconductor memory device and method for manufacturing the same
#242Selective epitaxial overgrowth comprising air gaps