207047 ⎘
Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof; Manufacture or treatment of semiconductor devices or of parts thereof; Forming layers; Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment introduction of substances into an already existing insulating layer
VOLUME-LESS FLUORINE INCORPORATION METHOD
#2GATE STRUCTURE PASSIVATING SPECIES DRIVE-IN METHOD AND STRUCTURE FORMED THEREBY
#3METHOD OF INTEGRATED COPPER OXIDE REMOVAL AND LOW K REPAIR PROCESS
#4INCREASED ETCH RESISTANCE OF NITRIDE LAYERS USING CHEMICAL VAPOR DEPOSITION AND HOT ION IMPLANTATION
#5Selective Removal of an Etching Stop Layer for Improving Overlay Shift Tolerance
#6METHODS TO IMPROVE OXIDE SIDEWALL QUALITY
#7DEVICE AND METHOD FOR HIGH PRESSURE ANNEAL
#8METHOD FOR PROVIDING DOPED SILICON USING A DIFFUSION BARRIER LAYER
#9SEMICONDUCTOR DEVICE, AND METHOD FOR PROTECTING LOW-K DIELECTRIC FEATURE OF SEMICONDUCTOR DEVICE
#10SEMICONDUCTOR DEVICE
#11METHODS FOR CHEMICALLY ETCHING A TARGET LAYER
#12ION IMPLANTATION FOR REDUCED ROUGHNESS OF SILICON NITRIDE
#13INTEGRATED DIPOLE REGION FOR TRANSISTOR
#14INFLUENCE FUNCTION-BASED MITIGATION OF SUBSTRATE DEFORMATION WITH FILM DEPOSITION AND ION IMPLANTATION
#15Methods of Reducing Gate Spacer Loss During Semiconductor Manufacturing
#16Volume-less Fluorine Incorporation Method
#17SEMICONDUCTOR DEVICE
#18SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS
#19Ferroelectric Semiconductor Device and Method
#20Device and method for high pressure anneal
#21Mechanism for finFET well doping
#22Gate Structure Passivating Species Drive-In Method and Structure Formed Thereby
#23Selective removal of an etching stop layer for improving overlay shift tolerance
#24METHOD FOR FORMING SEMICONDUCTOR DEVICE AND RESULTING DEVICE
#25METHOD AND SYSTEM FOR FORMING MATERIAL WITHIN A GAP
#26Semiconductor devices having dipole-inducing elements
#27Highly etch selective amorphous carbon film
#28METHODS FOR FORMING DOPED SILICON OXIDE THIN FILMS
#29Highly etch selective amorphous carbon film
#30Semiconductor device, and method for protecting low-k dielectric feature of semiconductor device
#31Ferroelectric semiconductor device and method
#32Techniques for improved low dielectric constant film processing
#33Gate structure of semiconductor device and method of manufacture
#34METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
#35Semiconductor structure
#36Strained gate semiconductor device having an interlayer dielectric doped with large species material
#37Method for providing doped silicon using a diffusion barrier layer
#38Method of manufacturing semiconductor device
#39Integrated circuitry, memory arrays comprising strings of memory cells, methods used in forming integrated circuitry, and methods used in forming a memory array comprising strings of memory cells
#40Iodine-containing fluorocarbon and hydrofluorocarbon compounds for etching semiconductor structures
#41Method of manufacturing semiconductor device
#42Mechanism for FinFET well doping
#43Gate structure passivating species drive-in method and structure formed thereby
#44Device and method for high pressure anneal
#45Substrate processing method and substrate processing apparatus
#46Methods of reducing gate spacer loss during semiconductor manufacturing
#47Semiconductor structure formation
#48Integrated circuits with doped gate dielectrics
#49Semiconductor device and method
#50Ferroelectric semiconductor device and method
#51Semiconductor device having improved overlay shift tolerance
#52Semiconductor structure and formation method thereof
#53Semiconductor structure and formation method thereof
#54Methods for forming doped silicon oxide thin films
#55Gate structure of semiconductor device and method of manufacture
#56Self-aligned contact and manufacturing method thereof
#57Highly etch selective amorphous carbon film
#58Gate stack structure and method for forming the same
#59Strained gate semiconductor device with oxygen-doped interlayer dielectric material
#60Method of topology-selective film formation of silicon oxide
#61Semiconductor device and manufacturing method thereof
#62Semiconductor structure with barrier layer and method for forming the same
#63DISPLAY APPARATUS, INTERLAYER FILM FOR LAMINATED GLASS, AND LAMINATED GLASS
#64Methods for forming doped silicon oxide thin films
#65Interconnect structure for semiconductor device and methods of fabrication thereof
#66Semiconductor device and method of manufacturing the same
#67Integrated circuits with doped gate dielectrics
#68Semiconductor device and method
#69Method for forming semiconductor device and resulting device
#70Method of manufacture of a FinFET device
#71FinFET device and method of forming same
#72Selective removal of an etching stop layer for improving overlay shift tolerance
#73Device and method for high pressure anneal
#74Methods of reducing gate spacer loss during semiconductor manufacturing
#75Semiconductor device gate structure and method of fabricating thereof
#76Self-aligned contact and manufacturing method thereof
#77Stacked silicon nanotubes
#78METHOD OF FORMING SEMICONDUCTOR DEVICE USING POLISHING RESISTANCE PATTERN
#79Techniques for forming low stress mask using implantation
#80Formation of self-aligned bottom spacer for vertical transistors
#81Surface treatment of silicon or silicon germanium surfaces using organic radicals
#82Techniques for forming low stress etch-resistant mask using implantation
#83Mechanism for FinFET well doping
#84Fin field-effect transistor
#85Fabrication of transistors having stressed channels
#86Manufacturing method of semiconductor device
#87VNAND tensile thick TEOS oxide
#88Interlayer dielectric film in semiconductor devices
#89Surface treatment of carbon containing films using organic radicals
#90Stacked silicon nanotubes
#91Substrate processing apparatus, method of manufacturing semiconductor device and non-transistory computer-readable recording medium
#92Dielectric gap-fill material deposition
#93Highly etch selective amorphous carbon film
#94Methods for forming doped silicon oxide thin films
#95Semiconductor structure with barrier layer and method for forming the same
#96Semiconductor device and manufacturing method thereof
#97Integrated circuits with doped gate dielectrics
#98Method and apparatus for microwave treatment of dielectric films
#99Surface treatment of silicon and carbon containing films by remote plasma with organic precursors
#100Method of manufacturing a semiconductor device
#101Atomic layer etching of metal oxide
#102Gate structure passivating species drive-in method and structure formed thereby
#103Gate structure passivating species drive-in method and structure formed thereby
#104Method of forming a gate structure of a semiconductor device
#105Gate structure of semiconductor device
#106Capacitor including first electrode, second electrode, and dielectric layer, image sensor, and method for producing capacitor
#107Interconnect structure for semiconductor device and methods of fabrication thereof
#108Interconnect structure for semiconductor device and methods of fabrication thereof
#109Method for forming semiconductor device and resulting device
#110Protection of low temperature isolation fill
#111Methods and apparatus for doping engineering and threshold voltage tuning by integrated deposition of titanium nitride and aluminum films
#112Semiconductor Device
#113Ferroelectric memory device and a method of manufacturing the same
#114Gate stack structure and method for forming the same
#115Graphene as interlayer dielectric
#116Semiconductor device and manufacturing method thereof
#117Image sensor and method of manufacturing the same
#118FDSOI channel control by implanted high-k buried oxide
#119Self-aligned contact and manufacturing method thereof
#120Strained gate semiconductor device having an interlayer dielectric doped with oxygen and a large species material
#121Semiconductor device and electrical device
#122Methods for forming doped silicon oxide thin films
#123Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium
#124Semiconductor device and manufacturing method thereof
#125Method of manufacturing semiconductor device
#126Method of manufacture of a FinFET device
#127Semiconductor device and method
#128Self-limiting cyclic etch method for carbon-based films
#129FDSOI channel control by implanted high-K buried oxide
#130Aluminum compound, method of forming thin film by using the same, and method of fabricating integrated circuit device
#131PERFORMING DECOUPLED PLASMA FLUORINATION TO REDUCE INTERFACIAL DEFECTS IN FILM STACK
#132Substrate processing method and substrate processing device
#133Method of sealing open pores on surface of porous dielectric material using iCVD process
#134Methods for forming doped silicon oxide thin films
#135Method for depositing a planarization layer using polymerization chemical vapor deposition
#136Display apparatus, interlayer film for laminated glass, and laminated glass
#137Mask structure forming method and film forming apparatus
#138Nanowire semiconductor device including lateral-etch barrier region
#139Interlayer dielectric film in semiconductor devices
#140Semiconductor device and fabrication method thereof
#141High aspect ratio patterning of hard mask materials by organic soft masks
#142SILANE AND BORANE TREATMENTS FOR TITANIUM CARBIDE FILMS
#143Low-K dielectric layer and porogen
#144Plasma activated conformal dielectric film deposition
#145Bottom processing
#146Chemical Infiltration into Porous Dielectric Films
#147SEMICONDUCTOR STRUCTURE AND FORMING METHOD THEREOF
#148Doped ferroelectric hafnium oxide film devices
#149Surface treatment agent and surface treatment method
#150VNAND tensile thick TEOS oxide
#151Selective atomic layer deposition process utilizing patterned self assembled monolayers for 3D structure semiconductor applications
#152Methods for fabricating semiconductor device
#153Metal-semiconductor contact structure with doped interlayer
#154Nanowire semiconductor device including lateral-etch barrier region
#155Nanowire semiconductor device including lateral-etch barrier region
#156Method for forming spacers for a transistor gate
#157Thin film transistor, pixel structure, and method for manufacturing the same, array substrate and display device
#158Method of patterning dopant films in high-k dielectrics in a soft mask integration scheme
#159Mechanism for FinFET well doping
#160Substrate processing apparatus for forming film including at least two different elements
#161Methods of curing a dielectric layer for manufacture of a semiconductor device
#162Compound semiconductor device and method of manufacturing the same
#163Method of manufacturing semiconductor device for forming film including at least two different elements
#164Silane and borane treatments for titanium carbide films
#165Methods for forming doped silicon oxide thin films
#166Method of patterning dopant films in high-k dielectrics in a soft mask integration scheme
#167Method and apparatus of manufacturing a semiconductor device by forming a film on a substrate
#168Three dimensional NAND device containing fluorine doped layer and method of making thereof
#169Method for making semiconductor devices including reactant treatment of residual surface portion
#170Mechanism of forming a trench structure
#171Method of manufacturing semiconductor device including forming a film containing a first element, a second element and carbon, substrate processing apparatus, and recording medium
#172Manufacturing method of graphene modulated high-K oxide and metal gate MOS device
#173Method of manufacturing semiconductor device and substrate processing apparatus
#174Method of manufacturing a semiconductor device with a continuous silicate glass structure
#175Method of manufacturing dielectric layers of semiconductor structure
#176Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium
#177Substrate processing apparatus, method of manufacturing semiconductor device and non-transitory computer-readable recording medium
#178Semiconductor devices including polar insulation layer capped by non-polar insulation layer
#179Methods for fabricating integrated circuits including fluorine incorporation
#180Selective atomic layer deposition process utilizing patterned self assembled monolayers for 3D structure semiconductor applications
#181METHOD OF MANUFACTURE FOR A SEMICONDUCTOR DEVICE
#182Self repairing process for porous dielectric materials
#183Method of manufacturing semiconductor device by forming a film on a substrate
#184Method of producing image pick-up apparatus and image pick-up apparatus
#185Method of manufacturing semiconductor device by forming a film on a substrate
#186Method of manufacturing semiconductor device by forming a film on a substrate
#187Method of manufacturing semiconductor device by forming a film on a substrate
#188Method of manufacturing a semiconductor device by forming a film on a substrate
#189Method of manufacturing semiconductor device and substrate processing apparatus
#190Substrate treatment method
#191Method of manufacturing a semiconductor device by forming a film on a substrate
#192Method of manufacturing a semiconductor device by forming a film on a substrate
#193Method for making semiconductor devices including reactant treatment of residual surface portion
#194Method of removing oxide from substrate and method of manufacturing semiconductor device using the same
#195Mechanism for FinFET well doping
#196Silane and borane treatments for titanium carbide films
#197Method for processing gate dielectric layer deposited on germanium-based or group III-V compound-based substrate
#198Method and apparatus for fabricating dielectric structures
#199Methods to Control SiO2 Etching During Fluorine Doping of Si/SiO2 Interface
#200Method for manufacturing semiconductor device
#201Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium
#202Thermally stable high-K tetragonal HFO2 layer within high aspect ratio deep trenches
#203Method for manufacturing semiconductor device for forming metal element-containing layer on insulating layer in which concave portion is formed, semiconductor device including insulating layer in which concave portion is formed, and semiconductor layer on insulating layer in which concave portion is formed
#204Semiconductor device manufacturing method
#205Semiconductor device
#206Method and apparatus for microwave treatment of dielectric films
#207Method and apparatus for microwave treatment of dielectric films
#208Method and apparatus for microwave treatment of dielectric films
#209Semiconductor device and method of manufacturing a semiconductor device with a continuous silicate glass structure
#210Plasma Doping Of Silicon-Containing Films
#211METHODS OF REPAIRING DAMAGED INSULATING MATERIALS BY INTRODUCING CARBON INTO THE LAYER OF INSULATING MATERIAL
#212Semiconductor device
#213Method of making a shallow trench isolation (STI) structures
#214Technique for forming a FinFET device using selective ion implantation
#215Method for manufacturing semiconductor device
#216Composite high-k gate dielectric stack for reducing gate leakage
#217Self repairing process for porous dielectric materials
#218Semiconductor device including a silicate glass structure and method of manufacturing a semiconductor device
#219Semiconductor device and method for manufacturing semiconductor device
#220Manufacturing method of semiconductor device having N-channel MOS transistor, P-channel MOS transistor and expanding or contracting film
#221Thermally stable high-K tetragonal HFOlayer within high aspect ratio deep trenches
#222Methods for forming doped silicon oxide thin films
#223Low-K dielectric layer and porogen
#224Zirconium-doped tantalum oxide films
#225Methods for repairing low-k dielectrics using carbon plasma immersion
#226Techniques for forming 3D structures
#227Doped oxide for shallow trench isolation (STI)
#228Semiconductor device incorporating charge balancing
#229SEMICONDUCTOR DEVICE
#230Apparatus and Method For Incorporating Composition Into Substrate Using Neutral Beams
#231METHOD OF FABRICATING SEMICONDUCTOR DEVICE USING A HARD MASK AND DIFFUSION
#232Ultra-low-k dual damascene structure and method of fabricating
#233Plasma activated conformal dielectric film deposition
#234Semiconductor devices and methods of forming the same
#235Method for manufacturing semiconductor device
#236Semiconductor substrate, semiconductor device and manufacturing method thereof
#237Semiconductor device and manufacturing method thereof
#238Method of forming a high-k gate dielectric layer
#239Method for manufacturing semiconductor device
#240Zirconium-doped tantalum oxide films
#241Oxidation after oxide dissolution
#242Method for forming trench isolation using a gas cluster ion beam growth process
#243Charge reservoir structure
#244Method of manufacturing semiconductor device, method of processing substrate and substrate processing apparatus for forming thin film containing at least two different elements
#245Methods of forming semiconductor devices
#246Method of forming flash memory with ultraviolet treatment
#247Method of forming non-volatile memory having charge trap layer with compositional gradient
#248Method of forming a non-volatile memory having a silicon nitride charge trap layer
#249Method of manufacturing semiconductor device and semiconductor device
#250Semiconductor device having an n-channel MOS transistor, a p-channel MOS transistor and a contracting film
#251Erbium-doped silicon nanocrystalline embedded silicon oxide waveguide
#252Silicon oxide-nitride-carbide thin-film with embedded nanocrystalline semiconductor particles
#253Method of forming dielectric films
#254Fabrication of a semiconductor nanoparticle embedded insulating film electroluminescence device
#255SEMI-CONDUCTOR DEVICE, AND METHOD OF MAKING THE SAME
#256Monolithically-pumped erbium-doped waveguide amplifiers and lasers
#257Semiconductor substrate, semiconductor device and manufacturing method thereof
#258Monolithically-Pumped Erbium-Doped Waveguide Amplifiers and Lasers
#259Method of forming a high-k gate dielectric layer
#260Method of Producing a Silicon Oxide-Based Material with a Low Dielectric Constant
#261Method of selectively forming a silicon nitride layer
#262Semiconductor device
#263Method of depositing thin film and method of manufacturing semiconductor using the same
#264Method of manufacture for a semiconductor device
#265Semiconductor device
#266Power MOS transistor incorporating fixed charges that balance the charge in the drift region
#267Semiconductor device
#268Doped aluminum oxide dielectrics
#269Gate dielectric layers and methods of fabricating gate dielectric layers
#270PROCESSING SYSTEM CONTAINING A HOT FILAMENT HYDROGEN RADICAL SOURCE FOR INTEGRATED SUBSTRATE PROCESSING
#271Two step post-deposition treatment of ILD layer for a lower dielectric constant and improved mechanical properties
#272Method of forming a low-k dielectric layer with improved damage resistance and chemical integrity
#273Damascene interconnection having porous low K layer with improved mechanical properties
#274Method of fabricating a high dielectric constant transistor gate using a low energy plasma apparatus
#275Semiconductor device and method for manufacturing the same
#276Microfeature dies with porous regions, and associated methods and systems
#277Zirconium-doped tantalum oxide films
#278ION IMPLANTED INSULATOR MATERIAL WITH REDUCED DIELECTRIC CONSTANT
#279Techniques to create low K ILD forming voids between metal lines
#280Integrated circuitry
#281Zirconium-doped tantalum oxide films
#282Method for forming capacitor of semiconductor device
#283SEMICONDUCTOR DEVICES PASSIVATION FILM
#284High stress nitride film and method for formation thereof
#285Method for fabricating a semiconductor device
#286Semiconductor device including gate insulation film that is formed of pyroceramics, and method of manufacturing the same
#287Mechanically robust dielectric film and stack
#288Method to form etch and/or CMP stop layers
#289Method of inhibiting degradation of gate oxide film
#290Microfeature dies with porous regions, and associated methods and systems
#291Zirconium-doped tantalum oxide films
#292Method for producing a dielectric and semiconductor structure
#293Field-effect transistors having doped aluminum oxide dielectrics
#294Capacitors having doped aluminum oxide dielectrics
#295Floating-gate field-effect transistors having doped aluminum oxide dielectrics
#296Electronic systems having doped aluminum oxide dielectrics
#297Semiconductor device and manufacturing method of the same
#298Method of inhibiting degradation of gate oxide film
#299Two step post-deposition treatment of ILD layer for a lower dielectric constant and improved mechanical properties
#300Techniques to create low K ILD for beol