207058 ⎘
Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof; Manufacture or treatment of semiconductor devices or of parts thereof; Forming layers; Forming inorganic semiconducting materials on a substrate; Substrates; Materials Group 14 semiconducting materials
SEMICONDUCTOR DEVICES WITH SUPERLATTICE LAYERS IN SOURCE/DRAIN REGIONS AND MANUFACTURING METHODS THEREOF
#2SEMICONDUCTOR DEVICES WITH SUPERLATTICE LAYERS IN SOURCE/DRAIN REGIONS AND MANUFACTURING METHODS THEREOF
#3DEVICE AND METHOD FOR HIGH PRESSURE ANNEAL
#4METHODS AND STRUCTURES FOR REDUCING DEFORMATIONS OF GALLIUM NITRIDE (GaN) DEVICES
#5Device and method for high pressure anneal
#6Device and method for high pressure anneal
#7Methods for depositing III-V compositions on silicon
#8Epitaxial wafer including boron and germanium and method of fabricating the same
#9METHOD OF FORMING A COBALT LAYER ON A SUBSTRATE
#10Device and method for high pressure anneal
#11Stacked indium gallium arsenide nanosheets on silicon with bottom trapezoid isolation
#12Method for manufacturing a semiconductor device
#13Process for producing a strained layer based on germanium-tin
#14Providing a temporary protective layer on a graphene sheet
#15Method for manufacturing a semiconductor device
#16Fabrication of semiconductor structures
#17METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE
#18Method of fabricating III-nitride semiconductor dies
#19Group III-V compound semiconductor nanowire, field effect transistor, and switching element
#20Method of forming a graphene structure
#21High resistance layer for III-V channel deposited on group IV substrates for MOS transistors
#22Layer transferring process
#23Crystal formation on non-lattice matched substrates
#24Preventing delamination and cracks in fabrication of group III-V devices
#25Method for preventing delamination and cracks in group III-V wafers
#26Method for fabricating a semiconductor structure
#27Method for manufacturing semiconductor HEMT device with stoichiometric silicon nitride layer
#28Methods for fabricating refined graphite-based structures and devices made therefrom
#29Methods of forming low-defect strain-relaxed layers on lattice-mismatched substrates and related semiconductor structures and devices
#30Semiconductor device structure and method of forming
#31Fabrication method of semiconductor memory device
#32SILICON SUBSTRATE SUITABLE FOR USE WITH AN RF COMPONENT, AND AN RF COMPONENT FORMED ON SUCH A SILICON SUBSTRATE
#33METHOD OF PRODUCING COMPOSITE WAFER AND COMPOSITE WAFER
#34Structures having isolated graphene layers with a reduced dimension
#35Method for heteroepitaxial growth of III metal-face polarity III-nitrides on substrates with diamond crystal structure and III-nitride semiconductors
#36Method of forming strain-relaxed buffer layers
#37Compound semiconductor structure
#38Optomechanical accelerometer
#39Methods of forming group III-V semiconductor materials on group IV substrates and the resulting substrate structures
#40Semiconductor structure with aspect ratio trapping capabilities
#41Method of manufacturing semiconductor device
#42METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE
#43Method of manufacturing semiconductor device
#44Tunnel field effect transistor and method for manufacturing same
#45Growth of coincident site lattice matched semiconductor layers and devices on crystalline substrates
#46Semiconductor device including semiconductor thin film, which is subjected to heat treatment to have alignment mark, crystallizing method for the semiconductor thin film, and crystallizing apparatus for the semiconductor thin film
#47NITRIDE SEMICONDUCTOR COMPONENT LAYER STRUCTURE ON A GROUP IV SUBSTRATE SURFACE
#48Fabrication of optical-quality facets vertical to a (001) orientation substrate by selective epitaxial growth
#49Fabrication of optical-quality facets vertical to a (001) orientation substrate by selective epitaxial growth
#50Semiconductor device including semiconductor thin film, which is subjected to heat treatment to have alignment mark, crystallizing method for the semiconductor thin film, and crystallizing apparatus for the semiconductor thin film