Patents-Review.com
ClassID:

207060 ⎘

H01L21/024 - CPC Classification

Classification description:

Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof; Manufacture or treatment of semiconductor devices or of parts thereof; Forming layers; Forming inorganic semiconducting materials on a substrate; Substrates; Materials Group 12/16 materials

Recent Application in this class:
#1
20240234556
2024-07-11

N-TYPE 2D TRANSITION METAL DICHALCOGENIDE (TMD) TRANSISTOR

 #2
20240136429
2024-04-25

N-TYPE 2D TRANSITION METAL DICHALCOGENIDE (TMD) TRANSISTOR

 #3
20230369038
2023-11-16

Methods of forming SOI substrates

 #4
20230352302
2023-11-02

Optimized heteroepitaxial growth of semiconductors

 #5
20230154747
2023-05-18

A SEED LAYER, A HETEROSTRUCTURE COMPRISING THE SEED LAYER AND A METHOD OF FORMING A LAYER OF MATERIAL USING THE SEED LAYER

 #6
20230148397
2023-05-11

Optimized heteroepitaxial growth of semiconductors

 #7
20230139650
2023-05-04

Optimized thick heteroepitaxial growth of semiconductors with in-situ substrate pretreatment

 #8
20230137113
2023-05-04

Optimized thick heteroepitaxial growth of semiconductors with in-situ substrate pretreatment

 #9
20230100277
2023-03-30

Optimized Heteroepitaxial Growth of Semiconductors

 #10
20230095501
2023-03-30

Optimized heteroepitaxial growth of semiconductors

 #11
20230090724
2023-03-23

Optimized heteroepitaxial growth of semiconductors

 #12
20230033788
2023-02-02

Optimized heteroepitaxial growth of semiconductors

 #13
20210090955
2021-03-25

Method for preparing a heterostructure

 #14
20210090876
2021-03-25

Methods of forming SOI substrates

 #15
20200223712
2020-07-16

Template-assisted synthesis of 2D nanosheets using nanoparticle templates

 #16
20190088466
2019-03-21

Methods of forming SOI substrates

 #17
20180186653
2018-07-05

Template-assisted synthesis of 2D nanosheets using nanoparticle templates

 #18
20160200971
2016-07-14

Highly luminescent semiconductor nanocrystals

 #19
20160064284
2016-03-03

Method for fabricating a semiconductor structure

 #20
20140376583
2014-12-25

Optoelectronic device containing at least one active device layer having a wurtzite crystal structure, and methods of making same

 #21
20140213046
2014-07-31

Fabrication of III-nitride layers

 #22
20140024159
2014-01-23

Optoelectronic device containing at least one active device layer having a wurtzite crystal structure, and methods of making same

 #23
20110315954
2011-12-29

Semiconductor nanocrystal, method of manufacture thereof and articles including the same

 #24
20100127255
2010-05-27

Schottky-like contact and method of fabrication

 #25
20080315129
2008-12-25

Ion implanting while growing a III-nitride layer

 #26
17094878
2024-07-23

Optimized thick heteroepitaxial growth of semiconductors with in-situ substrate pretreatment