ClassID:

207062

H01L21/02417 - CPC Classification

Classification description:

Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof; Manufacture or treatment of semiconductor devices or of parts thereof; Forming layers; Forming inorganic semiconducting materials on a substrate; Substrates; Materials Chalcogenide semiconducting materials not being oxides, e.g. ternary compounds

Recent Application in this class:
#1
20250166992
2025-05-22

METHOD FOR CONTROLLING SURFACE CHARACTERISTICS AND THICKNESS OF MULTILAYER TRANSITION METAL DICHALCOGENIDE THIN FILM

#2
20240038903
2024-02-01

Two-dimensional material-based wiring conductive layer contact structures, electronic devices including the same, and methods of manufacturing the electronic devices

#3
20230114347
2023-04-13

Method of forming transition metal dichalcogenide thin film

#4
20220108887
2022-04-07

DISLOCATION FREE SEMICONDUCTOR NANOSTRUCTURES GROWN BY PULSE LASER DEPOSITION WITH NO SEEDING OR CATALYST

#5
20210408296
2021-12-30

Transition metal dichalcogenide transistor and preparation method thereof

#6
20210305378
2021-09-30

Two-dimensional material-based wiring conductive layer contact structures, electronic devices including the same, and methods of manufacturing the electronic devices

#7
20210288205
2021-09-16

Diode devices and methods of forming a diode device

#8
20210043452
2021-02-11

Method of forming transition metal dichalcogenide thin film

#9
20200373414
2020-11-26

Thin-film semiconductors

#10
20200312965
2020-10-01

Two-dimensional semiconductor device, optoelectronic unit and method for making the two-dimensional semiconductor device

#11
20200223712
2020-07-16

Template-assisted synthesis of 2D nanosheets using nanoparticle templates

#12
20200194258
2020-06-18

Forming semiconductor structures with two-dimensional materials

#13
20200119174
2020-04-16

METHOD FOR FORMING A TRANSITION METAL DICHALCOGENIDE - GROUP III-V HETEROSTRUCTURE AND A TUNNELING FIELD EFFECT TRANSISTOR

#14
20200066988
2020-02-27

Electronic device and method for fabricating the same

#15
20190378715
2019-12-12

Forming semiconductor structures with two-dimensional materials

#16
20190245142
2019-08-08

Memory device and method of fabricating the same

#17
20190043718
2019-02-07

Mono- and multilayer silicene prepared by plasma-enhanced chemical vapor deposition

#18
20180186653
2018-07-05

Template-assisted synthesis of 2D nanosheets using nanoparticle templates

#19
20180151623
2018-05-31

Memory device and method of fabricating the same

#20
20170372897
2017-12-28

High rate sputter deposition of alkali metal-containing precursor films useful to fabricate chalcogenide semiconductors

#21
20170263453
2017-09-14

Substrate and electronic device

#22
20170222142
2017-08-03

Semiconductor device and method for producing a semiconductor device

#23
20160379821
2016-12-29

Method to produce pyrite

#24
20160153108
2016-06-02

Chemical and electrochemical synthesis and deposition of chalcogenides from room temperature ionic liquids

#25
20160141067
2016-05-19

Electrically conductive thin films

#26
20150221700
2015-08-06

Electronic device

#27
20140376583
2014-12-25

Optoelectronic device containing at least one active device layer having a wurtzite crystal structure, and methods of making same

#28
20140024159
2014-01-23

Optoelectronic device containing at least one active device layer having a wurtzite crystal structure, and methods of making same

#29
20130112110
2013-05-09

Chemical and electrochemical synthesis and deposition of chalcogenides from room temperature ionic liquids

#30
20090223444
2009-09-10

Apparatus for continuous processing of buffer layers for group IBIIIAVIA solar cells

#31
20080296534
2008-12-04

Core-Alloyed Shell Semiconductor Nanocrystals

#32
20080196659
2008-08-21

Method and apparatus for continuous processing of buffer layers for group IBIIIAVIA solar cells

#33
20060220132
2006-10-05

Semiconductor substrate, semiconductor device, method of manufacturing semiconductor substrate, and method of manufacturing semiconductor device

#34
15802547
2019-02-19

Tone inversion integration for phase change memory