207070 ⎘
Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof; Manufacture or treatment of semiconductor devices or of parts thereof; Forming layers; Forming inorganic semiconducting materials on a substrate; Intermediate layers between substrates and deposited layers Materials
Sub-classes:METHOD OF PRODUCING SEMICONDUCTOR EPITAXIAL WAFER, SEMICONDUCTOR EPITAXIAL WAFER, AND METHOD OF PRODUCING SOLID-STATE IMAGE SENSING DEVICE
#2METHOD OF PRODUCING SEMICONDUCTOR EPITAXIAL WAFER, SEMICONDUCTOR EPITAXIAL WAFER, AND METHOD OF PRODUCING SOLID-STATE IMAGE SENSING DEVICE
#3P-GAN HIGH-ELECTRON-MOBILITY TRANSISTOR
#4COMPOSITE SUBSTRATE AND PRODUCTION METHOD THEREFOR
#5Semiconductor Structure
#6Solar cells for a solar cell array
#7III-N HETEROEPITAXIAL DEVICES ON ROCK SALT SUBSTRATES
#8METHOD FOR PREPARING A SUBSTRATE
#9NANO-METAL CONNECTIONS FOR A SOLAR CELL ARRAY
#10SEMICONDUCTOR DEVICE WITH HIGH CHARGE CARRIER MOBILITY MATERIALS ON POROUS SILICON
#11LDMOS with high-k drain STI dielectric
#12METHOD OF PRODUCING SEMICONDUCTOR EPITAXIAL WAFER, SEMICONDUCTOR EPITAXIAL WATER, AND METHOD OF PRODUCING SOLID-STATE IMAGE SENSING DEVICE
#13Semiconductor device with metal-semiconductor contacts including oxygen insertion layer to constrain dopants and related methods
#14METHOD FOR PRODUCING SEMICONDUCTOR EPITAXIAL WAFER, SEMICONDUCTOR EPITAXIAL WAFER, AND METHOD OF PRODUCING SOLID-STATE IMAGE SENSING DEVICE
#15METHOD OF PRODUCING SEMICONDUCTOR EPITAXIAL WAFER, SEMICONDUCTOR EPITAXIAL WAFER, AND METHOD OF PRODUCING SOLID-STATE IMAGE SENSING DEVICE
#16COMPOSITE SUBSTRATE FOR A SURFACE ACOUSTIC WAVE DEVICE AND MANUFACTURING METHOD THEREOF
#17Re-based integrated photonic and electronic layered structures
#18Flexible Single-Crystal Semiconductor Heterostructures and Methods of Making Thereof
#19III-V nitride resonate based photoacoustic sensor
#20Pnictide buffer structures and devices for GaN base applications
#21LDMOS with high-k drain STI dielectric
#22Polycrystalline material having low mechanical strain; method for producing a polycrystalline material
#23Rare earth nitride structure or device and fabrication method
#24Forming non-line-of-sight source drain extension in an NMOS FINFET using n-doped selective epitaxial growth
#25Vapor phase growth rate measuring apparatus, vapor phase growth apparatus, and growth rate detection method
#26Optoelectronic device and method for making the same
#27Heteroepitaxial structures with high temperature stable substrate interface material
#28Scandium-containing III-N etch-stop layers for selective etching of III-nitrides and related materials
#29Method for application of an overgrowth layer on a germ layer
#30Compressive strain semiconductor substrates
#31METHOD OF FORMING NANOWIRES
#32Solar cells for a solar cell array
#33Nano-metal connections for a solar cell array
#34PREFABRICATED CONDUCTORS ON A SUBSTRATE TO FACILITATE CORNER CONNECTIONS FOR A SOLAR CELL ARRAY
#35Forming non-line-of-sight source drain extension in an NMOS FINFET using n-doped selective epitaxial growth
#36Rare earth pnictides for strain management
#37Forming non-line-of-sight source drain extension in an nMOS finFET using n-doped selective epitaxial growth
#38Nanowire sized opto-electronic structure and method for modifying selected portions of same
#39Structure and method to achieve compressively strained Si NS
#40Alumina substrate
#41Method for making epitaxial structure
#42Method of producing semiconductor epitaxial wafer, semiconductor epitaxial wafer, and method of producing solid-state image sensing device
#43Conversion of strain-inducing buffer to electrical insulator
#44Doped rare earth nitride materials and devices comprising same
#45Magnetic materials and devices comprising rare earth nitrides
#46Method for vertical and lateral control of III-N polarity
#47PVD buffer layers for LED fabrication
#48Method for producing thin-film solar cells
#49Strain compensated REO buffer for III-N on silicon
#50Nanowire sized opto-electronic structure and method for modifying selected portions of same
#51III-V nitride resonate structure based photoacoustic sensor
#52Heterogeneous material integration through guided lateral growth
#53Group III nitride composite substrate and method for manufacturing the same, laminated group III nitride composite substrate, and group III nitride semiconductor device and method for manufacturing the same
#54Conversion of strain-inducing buffer to electrical insulator
#55Planar semiconductor growth on III-V material
#56Thin film structure and method of fabricating the same
#57Method for providing lateral thermal processing of thin films on low-temperature substrates
#58Defect-free relaxed covering layer on semiconductor substrate with lattice mismatch
#59Electronic device containing nanowire(s), equipped with a transition metal buffer layer, process for growing at least one nanowire, and process for manufacturing a device
#60Nitride-based III-V group compound semiconductor
#61Nanowire article and processes for making and using same
#62Method for forming an epitactic silicon layer
#63Methods of removing surface ligand compounds
#64III nitride semiconductor substrate, epitaxial substrate, and semiconductor device
#65ELECTRONIC DEVICE, STACKED STRUCTURE, AND MANUFACTURING METHOD OF THE SAME
#66Substrate structure, complementary metal oxide semiconductor device, and method of manufacturing complementary metal oxide semiconductor device
#67Semiconductor device, superconducting device, and manufacturing method of semiconductor device
#68Method of forming strain-relaxed buffer layers
#69Compound semiconductor device and method of fabricating the same
#70Accelerated relaxation of strain-relaxed epitaxial buffers by use of integrated or stand-alone thermal processing
#71System and method for providing an electron blocking layer with doping control
#72III nitride semiconductor substrate, epitaxial substrate, and semiconductor device
#73Semiconductor device and method for manufacturing the same
#74Method for manufacturing a semiconductor micro- or nano-wire, semiconductor structure comprising such a micro- or nano-wire, and method for manufacturing a semiconductor structure
#75Semiconductor devices and fabrication methods
#76Conversion of strain-inducing buffer to electrical insulator
#77Devices including a diamond layer
#78III-N material grown on ErAIN buffer on Si substrate
#79Planar semiconductor growth on III-V material
#80REO/ALO/A1N template for III-N material growth on silicon
#81METHODS OF GROWING HETEROEPITAXIAL SINGLE CRYSTAL OR LARGE GRAINED SEMICONDUCTOR FILMS AND DEVICES THEREON
#82Nanowire sized opto-electronic structure and method for modifying selected portions of same
#83Electronic device containing nanowire(s), equipped with a transition metal buffer layer, process for growing at least one nanowire, and process for manufacturing a device
#84Standard wafer and its fabrication method
#85Method of producing semiconductor epitaxial wafer, semiconductor epitaxial wafer, and method of producing solid-state image sensing device
#86Optoelectric device with semiconductor microwires or nanowires and method for manufacturing the same
#87Method of manufacturing large area gallium nitride substrate
#88Planarized semiconductor particles positioned on a substrate
#89Compound semiconductor device and method of fabricating the same
#90Method for providing lateral thermal processing of thin films on low-temperature substrates
#91Solid state lighting devices with low contact resistance and methods of manufacturing
#92Methods of fabricating thick semi-insulating or insulating epitaxial gallium nitride layers
#93Multilayer substrate structure and method of manufacturing the same
#94Coincident site lattice-matched growth of semiconductors on substrates using compliant buffer layers
#95Method of forming a group III-nitride crystalline film on a patterned substrate by hydride vapor phase epitaxy (HVPE)
#96Laminate substrate and method of fabricating the same
#97Diamond and diamond composite material
#98High throughput epitaxial liftoff for releasing multiple semiconductor device layers from a single base substrate
#99High throughput epitaxial liftoff for releasing multiple semiconductor device layers from a single base substrate
#100Method for making epitaxial structure
#101Method for making epitaxial structure
#102Eptaxial structure
#103PVD buffer layers for LED fabrication
#104Compound semiconductor devices and methods of fabricating the same
#105Methods of growing heteroepitaxial single crystal or large grained semiconductor films and devices thereon
#106Semiconductor nanocrystals and methods of preparation
#107Methods of producing free-standing semiconductors using sacrificial buffer layers and recyclable substrates
#108Method for making epitaxial structure
#109Methods of forming bulk III-nitride materials on metal-nitride growth template layers, and structures formed by such methods
#110Defect capping method for reduced defect density epitaxial articles
#111Substrate with buffer layer for oriented nanowire growth
#112Methods for making thin layers of crystalline materials
#113Compound semiconductor devices and methods for fabricating the same
#114Epitaxial substrate for semiconductor device, method for manufacturing epitaxial substrate for semiconductor device, and semiconductor device
#115Method of growing nitride semiconductor layer
#116Heterojunction bipolar transistor with epitaxial emitter stack to improve vertical scaling
#117DEVICE STRUCTURE INCLUDING HIGH-THERMAL-CONDUCTIVITY SUBSTRATE
#118STRAIN COMPENSATED REO BUFFER FOR III-N ON SILICON
#119High throughput epitaxial liftoff for releasing multiple semiconductor device layers from a single base substrate
#120High throughput epitaxial liftoff for releasing multiple semiconductor device layers from a single base substrate
#121High throughput epitaxial lift off for flexible electronics
#122SILICON CARBIDE SUBSTRATE, SILICON CARBIDE SUBSTRATE MANUFACTURING METHOD, AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD
#123Light emitting device having group III-nitride current spreading layer doped with transition metal or comprising transition metal nitride
#124Particle and method for manufacturing same
#125Rare earth oxy-nitride buffered III-N on silicon
#126Semiconductor template substrate, light-emitting device using a semiconductor template substrate, and manufacturing method therefor
#127Defect mitigation structures for semiconductor devices
#128SEMICONDUCTOR WAFER AND METHOD OF PRODUCING THE SAME
#129SEMICONDUCTOR-ON-DIAMOND DEVICES AND METHODS OF FORMING
#130NITRIDE BASED LIGHT EMITTING DEVICE USING SILICON SUBSTRATE AND METHOD OF MANUFACTURING THE SAME
#131Nitrogen reactive sputtering of Cu-In-Ga-N for solar cells
#132SEMICONDUCTOR-ON-DIAMOND DEVICES AND ASSOCIATED METHODS
#133Photovoltaic Device Structure with Primer Layer
#134Solid state lighting devices and associated methods of manufacturing
#135Semiconductor device, method of manufacturing the same, and electronic device including the semiconductor device
#136Light emitting device
#137Semiconductor substrate suitable for the realisation of electronic and/or optoelectronic devices and relative manufacturing process
#138Semiconductor device and method for manufacturing the same
#139Method of fabricating semiconductor devices on a group IV substrate with controlled interface properties and diffusion tails
#140Group III nitride semiconductor substrate having a sulfide in a surface layer
#141Apparatus and systems for intermixing cadmium sulfide layers and cadmium telluride layers for thin film photovoltaic devices
#142Optical device and semiconductor wafer
#143Method for vertical and lateral control of III-N polarity
#144III nitride semiconductor substrate, epitaxial substrate, and semiconductor device
#145Group III nitride semiconductor growth substrate, group III nitride semiconductor epitaxial substrate, group III nitride semiconductor element and group III nitride semiconductor free-standing substrate, and method of producing the same
#146Solid state lighting devices with low contact resistance and methods of manufacturing
#147LIGHT EMITTING MODULE, METHOD OF MANUFACTURING THE LIGHT EMITTING MODULE, AND LAMP UNIT
#148Epitaxial growth of in-plane nanowires and nanowire devices
#149Solid state devices with semi-polar facets and associated methods of manufacturing
#150Method for providing lateral thermal processing of thin films on low-temperature substrates
#151Method of Group III Metal - Nitride Material Growth Using Metal Organic Vapor Phase Epitaxy
#152Method of forming nitride semiconductor epitaxial layer and method of manufacturing nitride semiconductor device
#153Crystalline surface structures and methods for their fabrication
#154DEFECT CAPPING FOR REDUCED DEFECT DENSITY EPITAXIAL ARTICLES
#155Method for growing a nitride-based III-V group compound semiconductor
#156SEMICONDUCTOR DEVICE WAFER, SEMICONDUCTOR DEVICE, DESIGN SYSTEM, MANUFACTURING METHOD AND DESIGN METHOD
#157Solid state lighting devices and associated methods of manufacturing
#158Semiconductor-on-diamond devices and methods of forming
#159Method for fabricating InGaAlN light emitting device on a combined substrate
#160METHOD FOR MANUFACTURING FREE-STANDING SUBSTRATE AND FREE-STANDING LIGHT-EMITTING DEVICE
#161Gallium nitride light emitting devices and methods of manufacturing the same
#162SILICON BASED SOLID STATE LIGHTING
#163Growth of monocrystalline GeN on a substrate
#164Method of fabricating semiconductor devices on a group IV substrate with controlled interface properties and diffusion tails
#165Compound semiconductor device using SiC substrate and its manufacture
#166{100}<100> or 45°-rotated {100}<100>, semiconductor-based, large-area, flexible, electronic devices
#167Method of manufacturing a SiCAlNsubstrate, method of manufacturing an epitaxial wafer, SiCAlNsubstrate, and epitaxial wafer
#168Substrate structures and methods of manufacturing the same
#169Methods of growing heteroepitaxial single crystal or large grained semiconductor films and devices thereon
#170NANO-PATTERNED SUBSTRATE AND EPITAXIAL STRUCTURE
#171Method of forming a group III-nitride crystalline film on a patterned substrate by hydride vapor phase epitaxy (HVPE)
#172SEMICONDUCTOR WAFER, METHOD OF MANUFACTURING A SEMICONDUCTOR WAFER, AND ELECTRONIC DEVICE
#173Semiconductor substrate having a flexible, heat resistant, graphite substrate
#174Diamond GaN devices and associated methods
#175Production of semiconductor devices
#176Systems and methods for harvesting and integrating nanowires
#177Dopant diffusion modulation in GaN buffer layers
#178Method for epitaxial growth and epitaxial layer structure using the method
#179Method of Making an Epitaxial Structure Having Low Defect Density
#180Compound semiconductor lamination, method for manufacturing the same, and semiconductor device
#181Methods of Fabrication of Solar Cells Using High Power Pulsed Magnetron Sputtering
#182Doped substrate to be heated
#183SEMICONDUCTOR SUBSTRATE SUITABLE FOR THE REALISATION OF ELECTRONIC AND/OR OPTOELECTRONIC DEVICES AND RELATIVE MANUFACTURING PROCESS
#184FABRICATION OF INORGANIC MATERIALS USING TEMPLATES WITH LABILE LINKAGE
#185Method of Manufacturing High Quality ZnO Monocrystal Film on Silicon(111) Substrate
#186CRYSTALLINE SEMICONDUCTOR FILMS, GROWTH OF SUCH FILMS AND DEVICES INCLUDING SUCH FILMS
#187Method of fabricating nitride-based compound layer, GaN substrate and vertical structure nitride-based semiconductor light emitting device
#188GROWTH METHOD USING NANOSTRUCTURE COMPLIANT LAYERS AND HVPE FOR PRODUCING HIGH QUALITY COMPOUND SEMICONDUCTOR MATERIALS
#189Process for modifying the properties of a thin layer and substrate applying said process
#190Deposition of group III-nitrides on Ge
#191Semiconductor-on-diamond devices and associated methods
#192Compound semiconductor device using SiC substrate and its manufacture
#193Isoelectronic surfactant suppression of threading dislocations in metamorphic epitaxial layers
#194Controlled doping of semiconductor nanowires
#195Method of manufacturing In(As)Sb semiconductor on lattice-mismatched substrate and semiconductor device using the same
#196Gallium nitride semiconductor device and manufacturing method thereof
#197Semiconductor device and method of processing the same
#198Optoelectronic device
#199Core-Alloyed Shell Semiconductor Nanocrystals
#200Gallium Nitride Semiconductor and Method of Manufacturing the Same
#201Semiconductor-based, large-area, flexible, electronic devices on {110}<100> oriented substrates
#202Semiconductor heterostructure
#203SEMICONDUCTOR STRUCTURES WITH STRUCTURAL HOMOGENEITY
#204Bulk single crystal gallium nitride and method of making same
#205Semiconductor-on-diamond devices and methods of forming
#206Systems and methods for harvesting and integrating nanowires
#207Method of manufacturing nitride-based semiconductor light-emitting device
#208Method of fabricating semiconductor devices on a group IV substrate with controlled interface properties and diffusion tails
#209Method Of Fabricating Strained Thin Film Semiconductor Layer
#210Indium nitride layer production
#211Semiconductor-on-diamond devices and associated methods
#212Silicon deposition over dual surface orientation substrates to promote uniform polishing
#213Method for making a semiconductor device comprising a lattice matching layer
#214Nitride semiconductor light-emitting device and method of manufacturing the same
#215Semiconductor device comprising a lattice matching layer
#216Semiconductor nanocrystal heterostructures
#217Method for growing a nitride-based III-V Group compound semiconductor
#218Monocrystalline diamond layer and method for the production thereof
#219Epitaxial substrate, method of making same and method of making a semiconductor chip
#220Method of producing self supporting substrates comprising III-nitrides by means of heteroepitaxy on a sacrificial layer
#221Method of manufacturing a wafer
#222Method of fabricating nitride-based compound layer, GaN substrate and vertical structure nitride-based semiconductor light emitting device
#223Transparent amorphous carbon structure in semiconductor devices
#224DIAMOND SUBSTRATE AND METHOD FOR FABRICATING THE SAME
#225Epitaxial growth of group III nitrides on silicon substrates via a reflective lattice-matched zirconium diboride buffer layer
#226Devices having thick semi-insulating epitaxial gallium nitride layer
#227Substrate for stressed systems and method of making same
#228Method for low-temperature, hetero-epitaxial growth of thin film cSi on amorphous and multi-crystalline substrates and c-Si devices on amorphous, multi-crystalline, and crystalline substrates
#229Semiconductor-on-diamond devices and methods of forming
#230Method of manufacturing gallium nitride semiconductor
#231Buffer structure for modifying a silicon substrate
#232Heteroisomer boron carbide devices
#233Wide bandgap semiconductor layers on SOD structures
#234Method for forming low defect density alloy graded layers and structure containing such layers
#235Ultra-thin, high quality strained silicon-on-insulator formed by elastic strain transfer
#236Substrate for stressed systems and method of making same
#237Substrate for stressed systems and method of making same
#238Porous substrate and its manufacturing method, and gan semiconductor multilayer substrate and its manufacturing method
#239Bulk single crystal gallium nitride and method of making same
#240Transparent amorphous carbon structure in semiconductor devices
#241Semiconductor device and method of fabricating the same
#242Methods for nanowire growth
#243Systems and methods for harvesting and integrating nanowires
#244Transparent amorphous carbon structure in semiconductor devices
#245Transparent amorphous carbon structure in semiconductor devices
#246Ultra-thin, high quality strained silicon-on-insulator formed by elastic strain transfer
#247Method for doping quantum dots
#248Method of altering the properties of a thin film and substrate implementing said method
#249Hafnium nitride buffer layers for growth of GaN on silicon
#250Nitride semiconductor device and method of manufacturing the same
#251Method of manufacturing a wafer
#252LnCuO(S,Se,Te)monocrystalline thin film, its manufacturing method, and optical device or electronic device using the monocrystalline thin film
#253Transparent amorphous carbon structure in semiconductor devices
#254Transparent amorphous carbon structure in semiconductor devices
#255Heterojunction tunneling diodes and process for fabricating same