ClassID:

207089

H01L21/0257 - page 2 - CPC Classification

Classification description:

Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof; Manufacture or treatment of semiconductor devices or of parts thereof; Forming layers; Forming inorganic semiconducting materials on a substrate; Deposited layers Doping during depositing

Recent Application in this class:
#301
20100055462
2010-03-04

Methods for forming nanocrystals with position-controlled dopants

#302
20100044718
2010-02-25

Method for making group III nitride articles

#303
20100001289
2010-01-07

Process for producing an epitaxial layer of galium nitride

#304
20090301864
2009-12-10

Film producing method using atmospheric pressure hydrogen plasma, and method and apparatus for producing refined film

#305
20090200643
2009-08-13

Semiconductor and method for producing the same

#306
20090124077
2009-05-14

Method for forming poly-silicon film

#307
20090044745
2009-02-19

Process for producing ZnO single crystal according to method of liquid phase growth

#308
20090026458
2009-01-29

Porous semiconductive film and process for its production

#309
20080315129
2008-12-25

Ion implanting while growing a III-nitride layer

#310
20080264777
2008-10-30

Thin film semiconductor material produced through reactive sputtering of zinc target using nitrogen gases

#311
20080251801
2008-10-16

METHOD OF PRODUCING GROUP III-V COMPOUND SEMICONDUCTOR, SCHOTTKY BARRIER DIODE, LIGHT EMITTING DIODE, LASER DIODE, AND METHODS OF FABRICATING THE DIODES

#312
20080113496
2008-05-15

Method for heteroepitaxial growth of high-quality N-face GaN, InN, and AIN and their alloys by metal organic chemical vapor deposition

#313
20080000521
2008-01-03

Low-temperature doping processes for silicon wafer devices

#314
20070280872
2007-12-06

Method of growing gallium nitride crystal and gallium nitride substrate

#315
20070141823
2007-06-21

Inclusion-free uniform semi-insulating group III nitride substrate and methods for making same

#316
20070138505
2007-06-21

Low defect group III nitride films useful for electronic and optoelectronic devices and methods for making the same

#317
20070122737
2007-05-31

Coating and developing system and coating and developing method

#318
20070105288
2007-05-10

Manufacturing method of semiconductor device

#319
20070072320
2007-03-29

Process for producing an epitalixal layer of galium nitride

#320
20060134891
2006-06-22

Method for manufacturing semiconductor device

#321
20060108573
2006-05-25

Single crystalline gallium nitride thick film having reduced bending deformation

#322
20050268841
2005-12-08

Radiation detector

#323
20050239263
2005-10-27

Diffusion-enhanced crystallization of amorphous materials to improve surface roughness

#324
18131679
2025-01-28

Group IIIA nitride growth system and method

#325
16691448
2020-12-01

Vertical selector stt-MRAM architecture

#326
16008207
2019-11-12

Method and structure for forming vertical transistors with various gate lengths

#327
15979988
2019-07-09

Fabrication of a dual-operation depletion/enhancement mode high electron mobility transistor

#328
15925187
2019-04-30

Co-deposition of black silicon

#329
15895053
2019-01-08

SOI-based floating gate memory cell

#330
15827108
2018-12-11

Source and drain formation using self-aligned processes

#331
15825656
2018-10-02

Thin film transistors with epitaxial source/drain contact regions

#332
15619923
2018-10-09

FinFET with sigma recessed source/drain and un-doped buffer layer epitaxy for uniform junction formation

#333
15488084
2020-07-28

Wafer-scale catalytic deposition of black phosphorus

#334
15332181
2017-08-29

Self aligned top extension formation for vertical transistors

#335
15282152
2017-06-13

Contact resistance reduction by III-V Ga deficient surface

#336
15240598
2018-01-02

Tapered vertical FET having III-V channel

#337
14949964
2017-01-17

Asymmetric multi-gate FinFET

#338
14658511
2016-08-02

FinFET structure and method of manufacturing the same