207089 ⎘
Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof; Manufacture or treatment of semiconductor devices or of parts thereof; Forming layers; Forming inorganic semiconducting materials on a substrate; Deposited layers Doping during depositing
Sub-classes:METHOD FOR MANUFACTURING GAN HEMT POWER SEMICONDUCTOR EPITAXY WAFER WITH HIGH-QUALITY AND HIGH-RESISTANCE BUFFER REGION
#2SUPERCONDUCTIVITY IN HYPERDOPED GE BY MOLECULAR BEAM EPITAXY
#3METHOD OF FABRICATING FIN-TYPE FIELD-EFFECT TRANSISTOR DEVICE HAVING SUBSTRATE WITH HEAVY DOPED AND LIGHT DOPED REGIONS
#4METHOD FOR FORMING DOPED METAL OXIDE FILMS ON A SUBSTRATE BY CYCLICAL DEPOSITION AND RELATED SEMICONDUCTOR DEVICE STRUCTURES
#5ON-DIE FORMATION OF SINGLE-CRYSTAL SEMICONDUCTOR STRUCTURES
#6METHOD AND APPARATUS FOR LOW TEMPERATURE SELECTIVE EPITAXY IN A DEEP TRENCH
#7APPARATUS AND METHOD FOR FILM FORMATION
#8Formation of Stacked Lateral Semiconductor Devices and the Resulting Structures
#9PROCESS FOR THE MANUFACTURE OF A SEMICONDUCTOR STRUCTURE COMPRISING A POLYCRYSTALLINE SILICON CARBIDE SUBSTRATE AND AN ACTIVE LAYER OF SINGLE-CRYSTAL SILICON CARBIDE
#10EUV DOSE REDUCING LAYERS, RELATED STRUCTURES, AND METHODS AND SYSTEMS FOR THEIR MANUFACTURE
#11SUBSTRATE PROCESSING APPARATUS, SUBSTRATE PROCESSING METHOD, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND NON-TRANSITORY COMPUTER-READABLE RECORDING MEDIUM
#122D NANORIBBONS UTILIZING SILICON SCAFFOLDING
#13METHOD FOR DEPOSITING PHOSPHORUS CONTAINING SILICON LAYER
#14SUPER JUNCTION TRENCH MOSFET AND METHOD FOR PREPARING SAME
#15Image sensor with shallow trench edge doping
#16Doping for semiconductor device with conductive feature
#17Method of fabricating Fin-type field-effect transistor device having substrate with heavy doped and light doped regions
#18On-die formation of single-crystal semiconductor structures
#19METHOD FOR FORMING DOPED METAL OXIDE FILMS ON A SUBSTRATE BY CYCLICAL DEPOSITION AND RELATED SEMICONDUCTOR DEVICE STRUCTURES
#20METHOD FOR PRODUCING DOPING RAW-MATERIAL SOLUTION FOR FILM FORMATION, METHOD FOR PRODUCING LAMINATE, DOPING RAW-MATERIAL SOLUTION FOR FILM FORMATION, AND SEMICONDUCTOR FILM
#21SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF
#22METHOD AND WAFER PROCESSING FURNACE FOR FORMING AN EPITAXIAL STACK ON A PLURALITY OF SUBSTRATES
#23Transistor structure with gate over well boundary and related methods to form same
#24Back end of line nanowire power switch transistors
#25Doped Diamond SemiConductor and Method of Manufacture Using Laser Abalation
#26EPITAXIAL STRUCTURE OF SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
#27TRANSISTOR WITH BUFFER STRUCTURE HAVING CARBON DOPED PROFILE
#28Forming Epitaxial Structures in Fin Field Effect Transistors
#29On-die formation of single-crystal semiconductor structures
#30Method and apparatus for low temperature selective epitaxy in a deep trench
#31Method of producing a two-dimensional material
#32Doping for semiconductor device with conductive feature
#33Method of manufacturing gate spacers with stepped sidewalls by removing vertical portions of a helmet layer
#34MOSFET structure with controllable channel length by forming lightly doped drains without using ion implantation
#35Method for setting a nitrogen concentration of a silicon epitaxial film in manufacturing an epitaxial silicon wafer
#36High electron mobility transistor and method for fabricating the same
#37Transistor with buffer structure having carbon doped profile
#38MANUFACTURING METHOD OF A SIC WAFER WITH RESIDUAL STRESS CONTROL
#39METHOD FOR FORMING FILM AND MANUFACTURING SEMICONDUCTOR DEVICE
#40Method of forming a 2-dimensional channel material, using ion implantation
#41Method of providing an air- and/or moisture-barrier coating on a two-dimensional material
#42Optoelectronic device having an array of germanium-based diodes with low dark current
#43Doping semiconductor films
#44Fin-type field-effect transistor device having substrate with heavy doped and light doped regions, and method of fabricating the same
#45Method of producing a two-dimensional material
#46Method for forming amorphous silicon thin film, method for manufacturing semiconductor device including same, and semiconductor manufactured thereby
#47Integrated circuit devices with an engineered substrate
#48Method and system for group IIIA nitride growth
#49Epitaxial structure of GaN-based radio frequency device based on Si substrate and its manufacturing method
#50Image sensor with shallow trench edge doping
#51Formation of stacked lateral semiconductor devices and the resulting structures
#52Doping for semiconductor device with conductive feature
#53Method for forming a layer by cyclic epitaxy
#54Back end of line nanowire power switch transistors
#55Vapor phase epitaxy method
#56Methods of forming tungsten structures
#57Formation of a Ga-doped SiGe and B/Ga-doped SiGe layers
#58Apparatus and method for film formation
#59Back end of line nanowire power switch transistors
#60Source/drain features with an etch stop layer
#61Fin semiconductor device having a stepped gate spacer sidewall
#62Methods for forming graded wurtzite III-nitride alloy layers
#63Doped diamond Semiconductor and method of manufacture using laser ablation
#64Conformal doped amorphous silicon as nucleation layer for metal deposition
#65Solar cell and solar cell module
#66Semiconductor epitaxial wafer, semiconductor device, and method for manufacturing semiconductor epitaxial wafer
#67Method of pre-treating substrate and method of directly forming graphene using the same
#68ROOM-TEMPERATURE FERROMAGNETIC SEMICONDUCTOR LAYERS, ELECTRONIC DEVICES INCLUDING THE SAME, AND METHODS OF FORMING THE SAME
#69Image sensor with shallow trench edge doping
#70Fin-type field-effect transistor device having substrate with heavy doped and light doped regions, and method of fabricating the same
#71Image sensor with shallow trench edge doping
#72Three-dimensional semiconductor memory device
#73Methods of forming tungsten structures
#74Method of growing doped group IV materials
#75Method of producing a two-dimensional material
#76Process for fabricating an array of germanium-based diodes with low dark current
#77Trench capacitor with warpage reduction
#78Forming epitaxial structures in fin field effect transistors
#79Source/drain features with an etch stop layer
#80Method for forming doped metal oxide films on a substrate by cyclical deposition and related semiconductor device structures
#81Methods of manufacturing vertical semiconductor diodes using an engineered substrate
#82Nanosheet transistors with different gate dielectrics and workfunction metals
#83Nanosheet transistors with different gate dielectrics and workfunction metals
#84Method and structure for forming vertical transistors with various gate lengths
#85Fin-type field-effect transistor device and method of fabricating the same
#86Production of a 3D circuit with upper level transistor provided with a gate dielectric derived from a substrate transfer
#87Semiconductor device including multiple layers of memory cells, method of manufacturing the same, and electronic device including the same
#88FILM FORMING METHOD AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
#89Method for doping layer, thin film transistor and method for fabricating the same
#90Image sensor with shallow trench edge doping
#91SEMICONDUCTOR DEVICES WITH SIDEWALL SPACERS OF EQUAL THICKNESS
#92SEMICONDUCTOR DEVICES WITH SIDEWALL SPACERS OF EQUAL THICKNESS
#93Self aligned top extension formation for vertical transistors
#94Group IIIA-nitride growth method and system
#95Electronic power devices integrated with an engineered substrate
#96Source/drain features with an etch stop layer
#97Composite semiconductor substrate, semiconductor device and method for manufacturing the same
#98Doping for semiconductor device with conductive feature
#99Forming epitaxial structures in fin field effect transistors
#100Method of manufacturing a protective stack on a semiconductor fin
#101Semiconductor devices and methods for manufacturing the same
#102Silicon carbide semiconductor element and method for manufacturing same
#103Trench capacitor with warpage reduction
#104Stacking fault-free semipolar and nonpolar GaN grown on foreign substrates by eliminating the nitrogen polar facets during the growth
#105Deep junction electronic device and process for manufacturing thereof
#106Metal-graphene structures forming a lattice of interconnected segments
#107Thin film transistors with epitaxial source/drain contact regions
#108Source and drain formation using self-aligned processes
#109FinFET with sigma recessed source/drain and un-doped buffer layer epitaxy for uniform junction formation
#110Precise junction placement in vertical semiconductor devices using etch stop layers
#111Source/drain features with an etch stop layer
#112Doping for semiconductor device with conductive feature
#113CMOS image sensor with shallow trench edge doping
#114High resistance readout FET for cognitive device
#115Nanosheet transistors with different gate dielectrics and workfunction metals
#116Methods of forming a vertical semiconductor diode using an engineered substrate
#117III-NITRIDE VERTICAL TRANSISTOR WITH APERTURE REGION FORMED USING ION IMPLANTATION
#118Method for manufacturing electronic component for heterojunction provided with buried barrier layer
#119Method for selectively depositing a Group IV semiconductor and related semiconductor device structures
#120CHALCOGENIDE FILMS FOR SELECTOR DEVICES
#121Vertical transistor gated diode
#122FinFET with sigma recessed source/drain and un-doped buffer layer epitaxy for uniform junction formation
#123Self aligned top extension formation for vertical transistors
#124Semiconductor heterostructures and methods for forming same
#125Method of producing a two-dimensional material
#126Doped diamond SemiConductor and method of manufacture using laser abalation
#127SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME
#128PROCESS FOR OBTAINING SEMICONDUCTOR NANODEVICES WITH PATTERNED METAL-OXIDE THIN FILMS DEPOSITED ONTO A SUBSTRATE, AND SEMICONDUCTOR NANODEVICES THEREOF
#129Method for forming doped metal oxide films on a substrate by cyclical deposition and related semiconductor device structures
#130Method of manufacturing semiconductor device, substrate processing apparatus and recording medium
#131Substrate treating apparatus
#132Field effect transistors with reduced parasitic resistances and method
#133METHOD AND APPARATUS FOR LOW TEMPERATURE SELECTIVE EPITAXY IN A DEEP TRENCH
#134SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME
#135Precise junction placement in vertical semiconductor devices using etch stop layers
#136Source and drain formation technique for fin-like field effect transistor
#137Semiconductor structure and fabricating method thereof
#138Thin-film transistor array panel having thin-film transistors with corrosiveness resistance
#139Semiconductor device and method for fabricating the same
#140Self aligned top extension formation for vertical transistors
#141Tapered vertical FET having III-V channel
#142Method for forming a thin film comprising an ultrawide bandgap oxide semiconductor
#143Contact resistance reduction by III-V Ga deficient surface
#144Semiconductor devices with sidewall spacers of equal thickness
#145FinFETs with strained well regions
#146Semiconductor devices with sidewall spacers of equal thickness
#147Electronic power devices integrated with an engineered substrate
#148Vertical semiconductor diode manufactured with an engineered substrate
#149Tapered vertical FET having III-V channel
#150Tapered vertical FET having III-V channel
#151Oxide sintered material, method of producing oxide sintered material, sputtering target, and method of producing semiconductor device
#152FinFETs with strained well regions
#153Precise junction placement in vertical semiconductor devices using etch stop layers
#154Precise junction placement in vertical semiconductor devices using etch stop layers
#155Method for reducing N-type FinFET source and drain resistance
#156Method of making a transistor having a source and a drain obtained by recrystallization of semiconductor
#157Group IIIA nitride growth system and method
#158C-plane GaN substrate
#159Methods for forming germanium and silicon germanium nanowire devices
#160Domain wall magnetic memory
#161Producing a semiconductor device by epitaxial growth
#162Method for removing crystal originated particles from a crystalline silicon body using an etch process
#163FIELD EFFECT TRANSISTORS
#164Method of Manufacturing Semiconductor Devices Including Deposition of Crystalline Silicon in Trenches
#165Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium
#166Semiconductor device structure and method
#167Method of forming silicon layer in manufacturing semiconductor device and recording medium
#168FinFET with U-shaped channel and S/D epitaxial cladding extending under gate spacers
#169Methods and apparatuses for showerhead backside parasitic plasma suppression in a secondary purge enabled ALD system
#170Semiconductor devices and methods for manufacturing the same
#171Method of producing differently doped zones in a silicon substrate, in particular for a solar cell
#172Semiconductor device including dual-layer source/drain region
#173SEMICONDUCTOR STRUCTURE AND FORMING METHOD THEREOF
#174Semiconductor device including dual-layer source/drain region
#175Method for bottom-up deposition of a film in a recessed feature
#176Semiconductor structure with enhanced withstand voltage
#177Structure for radiofrequency applications and process for manufacturing such a structure
#178FinFETs with non-merged epitaxial S/D extensions having a SiGe seed layer on insulator
#179Semiconductor wafer for integrated packages
#180METHOD OF SELECTIVE EPITAXY
#181Semiconductor devices with sidewall spacers of equal thickness
#182FinFET having highly doped source and drain regions
#183Methods of forming FINFETs with locally thinned channels from fins having in-situ doped epitaxial cladding
#184METHODS FOR FORMING NANOCRYSTALS WITH POSITION-CONTROLLED DOPANTS
#185Method of manufacturing thin-film solar cells with a p-type CdTe layer
#186FinFet structure
#187Method for doping source and drain regions of a transistor by means of selective amorphisation
#188Semiconductor devices and methods of manufacture thereof
#189FinFET device having a partially dielectric isolated fin structure
#190Method for manufacturing a nanowire structure
#191Semiconductor device and manufacturing method of semiconductor device
#192Reduced current leakage semiconductor device
#193Reduced current leakage semiconductor device
#194Method of manufacturing silicon carbide semiconductor substrate and method of manufacturing silicon carbide semiconductor device
#195Fin field effect transistor
#196Methods and apparatus for doped SiGe source/drain stressor deposition
#197Reducing substrate bowing caused by high percentage sige layers
#198High efficiency FinFET diode
#199Tunnel field-effect transistor, method for manufacturing same, and switch element
#200Self-limiting silicide in highly scaled fin technology
#201Transistor and method of making
#202Apparatus for forming a thin layer and method of forming a thin layer on a substrate using the same
#203Method of laser separation of the epitaxial film or the epitaxial film layer from the growth substrate of the epitaxial semiconductor structure (variations)
#204Transistor structures and fabrication methods thereof
#205Methods of forming doped epitaxial SiGe material on semiconductor devices
#206Nanowire device with improved epitaxy
#207Semiconductor devices with sidewall spacers of equal thickness
#208Semiconductor device and method of fabricating the same
#209Metal-insensitive epitaxy formation
#210finFET having highly doped source and drain regions
#211FinFET having highly doped source and drain regions
#212Semiconductor device and fabrication method thereof
#213DOPING CONTROL METHODS AND RELATED SYSTEMS
#214Semiconductor structure and manufacturing method thereof
#215FinFET with constrained source-drain epitaxial region
#216Thin film transistor and fabrication method thereof, array substrate and display
#217High efficiency FinFET diode
#218FinFETs with strained well regions
#219SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
#220Methods and apparatus for doped SiGe source/drain stressor deposition
#221Method for the formation of a FinFET device having partially dielectric isolated fin structure
#222Crystalline multilayer structure and semiconductor device
#223Crystalline multilayer structure and semiconductor device
#224Semiconductor device and method of manufacturing the same
#225Semiconductor device and method of manufacturing the same
#226Multiple channel length finFETs with same physical gate length
#227Asymmetric cyclic deposition and etch process for epitaxial formation mechanisms of source and drain regions
#228Method for forming a multiple layer epitaxial layer on a wafer
#229GaAs thin films and methods of making and using the same
#230Epitaxial wafer and a method of manufacturing thereof
#231FinFET having highly doped source and drain regions
#232Methods for forming FinFETs with non-merged epitaxial fin extensions
#233Nanowire device and method of manufacturing the same
#234III-V, Ge, or SiGe fin base lateral bipolar transistor structure and method
#235Methods of forming semiconductor devices using a layer of material having a plurality of trenches formed therein
#236Group III nitride articles and methods for making same
#237Method for removing crystal originated particles from a crystalline silicon body
#238Semiconductor devices and methods for manufacturing the same
#239Semiconductor structure and manufacturing method thereof
#240In-situ straining epitaxial process
#241Method of manufacturing silicon carbide semiconductor substrate and method of manufacturing silicon carbide semiconductor device
#242Memories and methods of forming thin-film transistors using hydrogen plasma doping
#243Methods of forming memory arrays and semiconductor constructions
#244FinFETs with non-merged epitaxial S/D extensions on a seed layer and having flat top surfaces
#245Metalorganic chemical vapor deposition of oxide dielectrics on N-polar III-nitride semiconductors with high interface quality and tunable fixed interface charge
#246Fabrication method of semiconductor memory device
#247Methods for forming FinFETs having epitaxial Si S/D extensions with flat top surfaces on a SiGe seed layer
#248HALOGEN DOPING SOURCE FOR DOPING OXIDE THIN FILM WlTH HALOGEN USING ATOMlC LAYER DEPOSITION, METHOD FOR MANUFACTURING THE HALOGEN DOPING SOURCE, METHOD FOR DOPING OXIDE THIN FILM WlTH HALOGEN USING ATOMIC LAYER DEPOSITlON, AND OXIDE THIN FILM DOPED WITH HALOGEN MANUFACTURED BY USING THE METHOD FOR DOPING OXIDE THIN FILM WITH HALOGEN
#249MOS devices having non-uniform stressor doping
#250SEMICONDUCTOR DEVICE MANUFACTURING METHOD
#251Flash devices and methods of manufacturing the same
#252Methods of fabricating micro- and nanostructure arrays and structures formed therefrom
#253APPARATUS AND METHOD FOR FILM FORMATION
#254Method of manufacturing a semiconductor device having an oxide semiconductor layer with increased hydrogen concentration
#255Field effect transistors with varying threshold voltages
#256Device isolation in FinFET CMOS
#257CMOS with dual raised source and drain for NMOS and PMOS
#258CMOS with dual raised source and drain for NMOS and PMOS
#259CMOS with dual raised source and drain for NMOS and PMOS
#260Band engineered semiconductor device and method for manufacturing thereof
#261Method and apparatus providing multi-step deposition of thin film layer
#262SEMICONDUCTOR LAMINATE AND METHOD FOR MANUFACTURING SAME, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE, DOPANT COMPOSITION, DOPANT INJECTION LAYER, AND METHOD FOR FORMING DOPED LAYER
#263Replacement source/drain finFET fabrication
#264Doped semiconductor films and processing
#265Epitaxial wafer and manufacturing method thereof
#266Replacement gate electrode with a self-aligned dielectric spacer
#267Nanoscale precursors for synthesis of Fe(Si,Ge)(S,Se)crystalline particles and layers
#268Compound semiconductor device, power source device and high frequency amplifier and method for manufacturing the same
#269High temperature GaN based super semiconductor and fabrication process
#270Multiple layer substrate
#271Interconnection of semiconductor device with graphene wire
#272Thin film, method of forming thin film, semiconductor device including thin film, and method of manufacturing semiconductor device
#273Fabrication of III-nitride layers
#274Latchup reduction by grown orthogonal substrates
#275Use of surfactants to control island size and density
#276Thin film semiconductor material produced through reactive sputtering of zinc target using nitrogen gases
#277Epitaxy of high tensile silicon alloy for tensile strain applications
#278SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME
#279METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE
#280Methods of forming memory arrays and semiconductor constructions
#281Access device having counter doping layer and semiconductor memory device having the same
#282Semiconductor device and method for manufacturing same
#283Apparatus and method for manufacturing a light-emitting device using a neutral particle beam
#284Field effect transistors with varying threshold voltages
#285COMPOSITE SUBSTRATE AND METHOD OF MANUFACTURING THE SAME
#286MOS devices having non-uniform stressor doping
#287Methods and apparatus for doped SiGe source/drain stressor deposition
#288Method and apparatus for growing a III-nitride layer
#289Method and apparatus for fabricating silicon heterojunction solar cells
#290Replacement source/drain finFET fabrication
#291CMOS with dual raised source and drain for NMOS and PMOS
#292Epitaxy of high tensile silicon alloy for tensile strain applications
#293TEMPLATE, METHOD FOR MANUFACTURING THE TEMPLATE, AND METHOD FOR MANUFACTURING VERTICAL TYPE NITRIDE-BASED SEMICONDUCTOR LIGHT EMITTING DEVICE USING THE TEMPLATE
#294Coating and developing system and coating and developing method
#295GeSn Infrared Photodetectors
#296Single crystal group III nitride articles and method of producing same by HVPE method incorporating a polycrystalline layer for yield enhancement
#297Thin film semiconductor material produced through reactive sputtering of zinc target using nitrogen gases
#298Inclusion-free uniform semi-insulating group III nitride substrates and methods for making same
#299Single crystal group III nitride articles and method of producing same by HVPE method incorporating a polycrystalline layer for yield enhancement
#300Method for manufacturing semiconductor epitaxial crystal substrate