207091 ⎘
Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof; Manufacture or treatment of semiconductor devices or of parts thereof; Forming layers; Forming inorganic semiconducting materials on a substrate; Deposited layers; Doping during depositing Delta-doping
SiC EPITAXIAL WAFER AND METHOD FOR MANUFACTURING SIC EPITAXIAL WAFER
#2RADIO FREQUENCY DEVICES, SILICON CARBIDE HOMOEPITAXIAL SUBSTRATES AND MANUFACTURING METHODS THEREOF
#3Transistors with enhanced dopant profile and methods for forming the same
#4SiC epitaxial wafer and method for manufacturing SIC epitaxial wafer
#5Solar cell and solar cell module
#6Method of forming oxygen inserted Si-layers in power semiconductor devices
#7Silicon carbide semiconductor substrate
#8P-N junction based devices with single species impurity for P-type and N-type doping
#9Methods and systems for dopant activation using microwave radiation
#10Nitride semiconductor substrate, semiconductor device, and method for manufacturing nitride semiconductor substrate
#11Oxygen inserted Si-layers for reduced substrate dopant outdiffusion in power devices
#12P-N junction based devices with single species impurity for P-type and N-type doping
#13Method for manufacturing semiconductor device
#14III-nitride tunnel junction with modified P-N interface
#15LOW-TEMPERATURE SELECTIVE EPITAXIAL GROWTH OF SILICON FOR DEVICE INTEGRATION
#16Epitaxial silicon wafer
#17Quantum doping method and use in fabrication of nanoscale electronic devices
#18Method of preparing diamond substrates for CVD nanometric delta doping
#19Group III-V device structure with variable impurity concentration
#20CVD reactor and method for nanometric delta doping of diamond
#21Silicon carbide semiconductor substrate and method of manufacturing silicon carbide semiconductor substrate
#22Semiconductor structure with self-aligned wells and multiple channel materials
#23NANOSCALE WIRES WITH TIP-LOCALIZED JUNCTIONS
#24GaO-based crystal film, and crystal multilayer structure
#25Semiconductor devices with germanium-rich active layers and doped transition layers
#26TFT substrate structure and manufacturing method thereof
#27Hardmask composition and method of forming patterning by using the hardmask composition
#28Methods and systems for dopant activation using microwave radiation
#29Semiconductor device and method for fabricating the same
#30Method of fabricating non-etch gas cooled epitaxial stack for group IIIA-N devices
#31High mobility transport layer structures for rhombohedral Si/Ge/SiGe devices
#32TFT substrate structure and manufacturing method thereof
#33Group III-V device structure having a selectively reduced impurity concentration
#34Method of manufacturing nitride semiconductor device
#35LOW-TEMPERATURE SELECTIVE EPITAXIAL GROWTH OF SILICON FOR DEVICE INTEGRATION
#36Semiconductor devices with germanium-rich active layers and doped transition layers
#37Conversion of carbon into n-type and p-type doped diamond and structures
#38Method of making a three-dimensional memory device having a heterostructure quantum well channel
#39Thin film transistor substrate having high reliability metal oxide semiconductor material
#40METHOD OF GROWING AN EPITAXIAL SUBSTRATE AND FORMING A SEMICONDUCTOR DEVICE ON THE EPITAXIAL SUBSTRATE
#41Methods and systems for dopant activation using microwave radiation
#42Electronic device using group III nitride semiconductor and its fabrication method and an epitaxial multi-layer wafer for making it
#43System and method for substrate wafer back side and edge cross section seals
#44CARBON DOPING SEMICONDUCTOR DEVICES
#45Carbon doping semiconductor devices
#46Process for integrated circuit fabrication including a liner silicide with low contact resistance
#47Semiconductor structure with self-aligned wells and multiple channel materials
#48Tunneling field effect transistors and transistor circuitry employing same
#49Semiconductor devices with germanium-rich active layers and doped transition layers
#50P-type doping layers for use with light emitting devices
#51Hardmask composition and method of forming patterning by using the hardmask composition
#52Group III-V device with a selectively modified impurity concentration
#53P-type doping layers for use with light emitting devices
#54Multiple-threshold voltage devices and method of forming same
#55Doped gallium nitride high-electron mobility transistor
#56Nitride semiconductor element and nitride semiconductor wafer
#57Multiple-threshold voltage devices and method of forming same
#58Group III-V device with a selectively modified impurity concentration
#59Group III-V device with a selectively reduced impurity concentration
#60Metamorphic growth of III-V semiconductor on silicon substrate by MOCVD for high speed III-V transistors
#61Semiconductor light emitting device and method for manufacturing the same
#62DELTA DOPING AT Si-Ge INTERFACE
#63P-type doping layers for use with light emitting devices
#64Group III-V device structure having a selectively reduced impurity concentration
#65Nitride semiconductor device, nitride semiconductor wafer, and method for manufacturing nitride semiconductor layer
#66Low-temperature selective epitaxial growth of silicon for device integration
#67Semiconductor light emitting device and method for manufacturing the same
#68Silicon-based tunneling field effect transistors and transistor circuitry employing same
#69Semiconductor light emitting device and method for manufacturing the same
#70System and method for substrate wafer back side and edge cross section seals
#71Semiconductor light emitting device and method for manufacturing the same
#72Dopant confinement in the delta doped layer using a dopant segregration barrier in quantum well structures
#73Nitride semiconductor element and process for producing the same
#74Semiconductor light emitting device and method for manufacturing the same
#75Methods of passivating surfaces of wide bandgap semiconductor devices
#76Si/SiGe interband tunneling diodes with tensile strain
#77High hole mobility semiconductor device
#78Dopant confinement in the delta doped layer using a dopant segregation barrier in quantum well structures
#79Method for manufacturing a semiconductor device on GAN substrate having surface bidirectionally inclined toward <1-100> and <11-20> directions relative to {0001} crystal planes
#80Nitride based semiconductor device having multiple layer buffer structure and fabrication method thereof
#81Layer growth using metal film and/or islands
#82Transistors having buried n-type and p-type regions beneath the source region
#83Semiconductor device having bidirectionally inclined toward <1-100> and <11-20> relative to {0001} crystal planes
#84Semiconductor electronic devices and methods
#85P-N junction based devices with single species impurity for P-type and N-type doping
#86Method and apparatus for making p-channel thin film transistors for OLED and LED active matrix flat panel displays
#87Quantum doping method and use in fabrication of nanoscale electronic devices