Semiconductor device producing method with selective epitaxial growth

Controlled doping of semiconductor nanowires

Selective formation of silicon carbon epitaxial layer

Nitride semiconductor light-emitting device

PRECURSORS AND PROCESSES FOR LOW TEMPERATURE SELECTIVE EPITAXIAL GROWTH

Methods for forming passivated semiconductor nanoparticles

Methods of making substitutionally carbon-doped crystalline Si-containing materials by chemical vapor deposition

Quantum dot array and production method therefor, and dot array element and production method therefor

Methods to fabricate MOSFET devices using a selective deposition process

Field effect transistor structure with abrupt source/drain junctions

Semiconductor device fabrication method, semiconductor device, and semiconductor layer formation method

Substrate for epitaxy and method of preparing the same

Planar nonpolar m-plane group III nitride films grown on miscut substrates

METHOD FORMING EPITAXIAL SILICON STRUCTURE

Silicon compatible integrated light communicator

Method of fabricating a device with a concentration gradient and the corresponding device

METHOD OF FORMING SELECTIVE AREA COMPOUND SEMICONDUCTOR EPITAXIAL LAYER

Selective epitaxy process control

Structures containing electrodeposited germanium and methods for their fabrication

CRYSTAL GROWTH OF M-PLANE AND SEMIPOLAR PLANES OF (Al, In, Ga, B)N ON VARIOUS SUBSTRATES

Methods of fabricating semiconductor devices including channel layers having improved defect density and surface roughness characteristics

Nitride based semiconductor device and process for preparing the same

Formation of in-situ phosphorus doped epitaxial layer containing silicon and carbon

Method of improving a surface of a semiconductor substrate

Method for growing Si-Ge semiconductor materials and devices on substrates

Quantum tunneling devices and circuits with lattice-mismatched semiconductor structures

Carbon precursors for use during silicon epitaxial film formation

Pulsed growth of catalyst-free growth of GaN nanowires and application in group III nitride semiconductor bulk material

Stacked semiconductor devices and methods of manufacturing the same

Embedded semiconductor component

Selective epitaxial formation of semiconductor films

Vapor-phase growth method, semiconductor manufacturing method and semiconductor device manufacturing method

Semiconductor device with SEG film active region

Doped elongated semiconductors, growing such semiconductors, devices including such semiconductors and fabricating such devices

Method of making strained semiconductor transistors having lattice-mismatched semiconductor regions underlying source and drain regions

Nitride semiconductor device and process for producing the same

Selective epitaxy process with alternating gas supply

Multi-orientation semiconductor-on-insulator (SOI) substrate, and method of fabricating same

Methods for in-situ generation of reactive etch and growth specie in film formation processes

Semiconductor nanocrystal heterostructures

Methods of manufacturing field effect transistors having elevated source/drain regions

Manufacturing method of semiconductor substrate

Methods to fabricate MOSFET devices using a selective deposition process

Nitride semiconductor light-emitting device

Interrupted deposition process for selective deposition of Si-containing films

Doped elongated semiconductors, growing such semiconductors, devices including such semiconductors, and fabricating such devices

Transistor device with strained germanium (Ge) layer by selectively growth and fabricating method thereof

Low temperature formation of patterned epitaxial Si containing films

Doped elongated semiconductors, growing such semiconductors, devices including such semiconductors, and fabricating such devices

Doped elongated semiconductors, growing such semiconductors, devices including such semiconductors, and fabricating such devices

Doped elongated semiconductors, growing such semiconductors, devices including such semiconductors, and fabricating such devices

Doped elongated semiconductors, growing such semiconductors, devices including such semiconductors, and fabricating such devices

Method for forming silicon-containing materials during a photoexcitation deposition process

Electrochemical method for the direct nanostructured deposition of material onto a substrate, and semiconductor component produced according to said method

Methods of making substitutionally carbon-doped crystalline Si-containing materials by chemical vapor deposition

System and method for depositing a material on a substrate

Selective deposition of silicon-containing films

Methods of selective deposition of heavily doped epitaxial SiGe

Method of fabricating a field effect transistor structure with abrupt source/drain junctions

Selective epitaxy process with alternating gas supply

Methods of depositing electrically active doped crystalline Si-containing films

Method for forming a silicon-containing film

Method of forming a nonvolatile memory device using semiconductor nanoparticles

Compositions for forming a semiconducting and/or silicon-containing film, and structures formed therefrom

Compositions and methods for forming a semiconducting and/or silicon-containing film, and structures formed therefrom

Selective epitaxy process with alternating gas supply

Single crystal substrate and method of fabricating the same

Nitride based semiconductor device and process for preparing the same

Template type substrate and a method of preparing the same

Quantum nano-structure semiconductor laser

Substrate for epitaxy and method of preparing the same

Method for manufacturing thin film transistor, electro-optical device and electronic apparatus

Methods of selectively forming epitaxial semiconductor layer on single crystalline semiconductor and semiconductor devices fabricated using the same

Localized synthesis and self-assembly of nanostructures

In situ doped epitaxial films

Doped elongated semiconductors, growing such semiconductors, devices including such semiconductors and fabricating such devices

Method of making strained semiconductor transistors having lattice-mismatched semiconductor regions underlying source and drain regions

Strained transistor integration for CMOS

Methods to fabricate MOSFET devices using selective deposition process

Methods of selective deposition of heavily doped epitaxial SiGe

Nitride semiconductor substrate production method thereof and semiconductor optical device using the same

Structure and method of making strained semiconductor CMOS transistors having lattice-mismatched semiconductor regions underlying source and drain regions

Method of making group III nitride-based compound semiconductor

Method of fabricating a field effect transistor structure with abrupt source/drain junctions

Compositions and methods for forming a semiconducting and/or silicon-containing film, and structures formed therefrom

Non-volatile memory with storage nodes having a radius of curvature

Three-dimensional memory devices having transferred interconnect layer and methods for forming the same

Three dimensional memory device fabricating method and applications thereof

Three-dimensional memory device having vertical semiconductor channels including source-side boron-doped pockets and methods of making the same

Methods for forming a germanium island using selective epitaxial growth and a sacrificial filling layer

Method of characterizing the anisotropic, complex dielectric constant for materials with small dimensions

Uniformity tuning of variable-height features formed in trenches

Three-dimensional memory device containing structurally reinforced pedestal channel portions and methods of making the same

Semiconductor device and method for manufacturing same

Method for fabricating metal replacement gate semiconductor device using dummy gate and composite spacer structure

Semiconductor structure and manufacturing method thereof

Fin-type field effect transistor structure and manufacturing method thereof

Vertical-transport field-effect transistors with an etched-through source/drain cavity

Epitaxy source/drain regions of FinFETs and method forming same

Semiconductor device and method of forming the same

FinFET with sigma recessed source/drain and un-doped buffer layer epitaxy for uniform junction formation

Doping channels of edge cells to provide uniform programming speed and reduce read disturb

Method for manufacturing semiconductor device with epitaxial structure

Almost defect-free active channel region

Method of fabricating semiconductor device

Method of fabricating epitaxial layer

Method of forming memory cell film

One-dimensional nanostructure growth on graphene and devices thereof

Method of forming a III-V compound semiconductor channel post replacement gate

Integration method for a vertical nanowire transistor

Elimination of defects in long aspect ratio trapping trench structures

Strained silicon germanium fin with block source/drain epitaxy and improved overlay capacitance

Semiconductor device with epitaxial structure and manufacturing method thereof

Capacitor in strain relaxed buffer

Nanowire semiconductor device

Nanowire field effect transistor (FET) and method for fabricating the same

Tall strained high percentage silicon germanium fins for CMOS

Elimination of defects in long aspect ratio trapping trench structures

Asymmetric multi-gate FinFET

Perfectly shaped controlled nanowires

Enhanced defect reduction for heteroepitaxy by seed shape engineering

Fin field effect transistor and method for fabricating the same

FinFET fabrication by forming isolation trenches prior to fin formation

Epitaxial semiconductor fuse for FinFET structure

Punch through stopper for semiconductor device

Structure and method for compressively strained silicon germanium fins for pFET devices and tensily strained silicon fins for nFET devices

Compact FDSOI device with Bulex contact extending through buried insulating layer adjacent gate structure for back-bias

Integrated circuit having dual material CMOS integration and method to fabricate same

Silicon-on-insulator substrates having selectively formed strained and relaxed device regions

Semiconductor structure and method for manufacturing the same

III-V compound and germanium compound nanowire suspension with germanium-containing release layer

Asymmetric FET

finFETs containing improved strain benefit and self aligned trench isolation structures