207102 ⎘
Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof; Manufacture or treatment of semiconductor devices or of parts thereof; Forming layers; Forming inorganic semiconducting materials on a substrate; Formation types; Deposition types Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
ASYMMETRIC ULTRATHIN SOI MOS TRANSISTOR STRUCTURE AND METHOD OF MANUFACTURING SAME
#602Method for manufacturing a semiconductor structure, semiconductor structure, and electronic device
#603Simultaneous formation of source/drain openings with different profiles
#604Fin shape structure
#605Diode-based devices and methods for making the same
#606Uniaxially-strained FD-SOI finFET
#607Method of forming an epitaxial layer on a substrate, and apparatus and system for performing the same
#608Method for determining preferential deposition parameters for a thin layer of III-V material
#609Transistor with performance boost by epitaxial layer
#610Method for processing a carrier
#611Method of forming nanowires
#612Method for growing III-V epitaxial layers
#613Material deposition for high aspect ratio structures
#614Epitaxial growth of material on source/drain regions of FinFET structure
#615Method of processing substrate, substrate processing apparatus, and recording medium
#616Silicon carbide substrate, silicon carbide semiconductor device, and methods for manufacturing silicon carbide substrate and silicon carbide semiconductor device
#617Production method of epitaxial silicon wafer and vapor deposition apparatus
#618Method of forming an epitaxial semiconductor layer in a recess and a semiconductor device having the same
#619High voltage field effect transistors
#620Low external resistance channels in III-V semiconductor devices
#621Method of formation of germanium nanowires on bulk substrates
#622Process design to improve transistor variations and performance
#623Fin field-effect transistors and fabrication methods thereof
#624Dual channel material for finFET for high performance CMOS
#625Metal-insensitive epitaxy formation
#626EMBEDDED SIGMA-SHAPED SEMICONDUCTOR ALLOYS FORMED IN TRANSISTORS
#627Tunneling field effect transistor having a three-side source and fabrication method thereof
#628Stressed channel bulk fin field effect transistor
#629FinFET doping methods and structures thereof
#630Semiconductor device and fabrication method thereof
#631Method for producing group III nitride semiconductor and template substrate
#632Semiconductor structure and manufacturing method thereof
#633Method for selectively depositing a layer on a three dimensional structure
#634High efficiency apparatus and method for depositing a layer on a three dimensional structure
#635Method for fabricating a strained structure and structure formed
#636Method for producing a microelectronic device
#637Tunneling field effect transistor device and related manufacturing method
#638Semiconductor fin fabrication method and Fin FET device fabrication method
#639Segmented graphene growth on surfaces of a patterned substrate layer and devices thereof
#640Depositing material into high aspect ratio structures
#641Graphene nanoribbons and carbon nanotubes fabricated from SiC fins or nanowire templates
#642Semiconductor device and fabrication method
#643Asymmetric cyclic deposition and etch process for epitaxial formation mechanisms of source and drain regions
#644Forming alternative material fins with reduced defect density by performing an implantation/anneal defect generation process
#645Method of forming an epitaxial semiconductor layer in a recess and a semiconductor device having the same
#646Quantum tunneling devices and circuits with lattice-mismatched semiconductor structures
#647METHOD OF PREPARING A SUBSTRATE FOR NANOWIRE GROWTH, AND A METHOD OF FABRICATING AN ARRAY OF SEMICONDUCTOR NANOSTRUCTURES
#648Defect-free relaxed covering layer on semiconductor substrate with lattice mismatch
#649Isolated semiconductor layer over buried isolation layer
#650Isolated semiconductor layer in bulk wafer by localized silicon epitaxial seed formation
#651Localized region of isolated silicon over dielectric mesa
#652Semiconductor devices and methods for manufacturing the same
#653Systems and methods for semiconductor device process determination using reflectivity measurement
#654Robust gate spacer for semiconductor devices
#655Method for manufacturing silicon carbide semiconductor device
#656Method for removing crystal originated particles from a crystalline silicon body
#657SEMICONDUCTOR STORAGE DEVICE AND METHOD OF MANUFACTURING THE SAME
#658Method of forming semiconductor device having stressor
#659Epitaxial channel
#660SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
#661NONVOLATILE SEMICONDUCTOR STORAGE DEVICE AND METHOD OF MANUFACTURING THE SAME
#662FinFET fabrication method using buffer layers between channel and semiconductor substrate
#663Semiconductor structure and manufacturing method thereof
#664FinFET and method of fabricating the same
#665Shallow trench isolation structure
#666Semiconductor device with insert structure at a rear side and method of manufacturing
#667Epitaxy in semiconductor structure and manufacturing method thereof
#668FinFET with multilayer fins for multi-value logic (MVL) applications and method of forming
#669Nitride nanowires and method of producing such
#670Epitaxially forming a set of fins in a semiconductor device
#6711T SRAM/DRAM
#6721T SRAM/DRAM
#673Method to form trench structure for replacement channel growth
#674ULTRATHIN BODY FULLY DEPLETED SILICON-ON-INSULATOR INTEGRATED CIRCUITS AND METHODS FOR FABRICATING SAME
#675Semiconductor devices and methods of manufacturing the same
#676Pre-cleaning method and preparation method of low-temperature polysilicon thin film, liquid crystal display device, and manufacturing system thereof
#677Semiconductor device and method of manufacturing the same
#678Methods of selectively growing source/drain regions of fin field effect transistor and method of manufacturing semiconductor device including a fin field effect transistor
#679System for producing polycrystalline silicon, apparatus for producing polycrystalline silicon, and process for producing polycrystalline silicon
#680Process design to improve transistor variations and performance
#681NONVOLATILE MEMORY DEVICE USING SEMICONDUCTOR NANOCRYSTALS AND METHOD OF FORMING SAME
#682Manufacture of a variation resistant metal-oxide-semiconductor field effect transistor (MOSFET)
#683Fabrication method of silicon carbide semiconductor apparatus
#684Transistor and method for forming the same
#685SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
#686Fin field effect transistor and method for forming the same
#687Methods of fabricating micro- and nanostructure arrays and structures formed therefrom
#688Method for fabricating a field effect transistor with local isolations on raised source/drain trench sidewalls
#689Method for forming an epitactic silicon layer
#690Antifuse of semiconductor device and method of fabricating the same
#691Selective nanoscale growth of lattice mismatched materials
#692Semiconductor device including transistor and method of manufacturing the same
#693Polysilicon manufacturing method that controls growth direction of polysilicon
#694Method for forming semiconductor device with SEG film active region
#695Semiconductor device having embedded strain-inducing pattern
#696Vertical-type nonvolatile memory device and method of manufacturing the same
#697Multi-height multi-composition semiconductor fins
#698Method for fabricating NMOS and PMOS transistors on a substrate of the SOI, in particular FDSOI, type and corresponding integrated circuit
#699Heterostructure including a composite semiconductor layer
#700Method and apparatus for direct formation of nanometer scaled features
#701METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
#702Tunneling field effect transistor device and related manufacturing method
#703Vertical nanowire transistor with axially engineered semiconductor and gate metallization
#704Semiconductor device having embedded strain-inducing pattern and method of forming the same
#705Source and drain stressors with recessed top surfaces
#706Depression filling method and processing apparatus
#707Photoelectric conversion device and manufacturing method thereof
#708Integrated circuit with first and second switching devices, half bridge circuit and method of manufacturing
#709Semiconductor substrate suitable for the realization of electronic and/or optoelectronic devices and relative manufacturing process
#710Method of forming semiconductor device having embedded strain-inducing pattern
#711Method for making electronic device using group III nitride semiconductor having specified dislocation density oxygen/electron concentration, and active layer thickness
#712Gallium nitride nanowire based electronics
#713Carbon-doped cap for a raised active semiconductor region
#714Quantum tunneling devices and circuits with lattice-mismatched semiconductor structures
#715Self-aligned contact structure for replacement metal gate
#716Method of manufacturing semiconductor device
#717Replacement gate electrode with a self-aligned dielectric spacer
#718Semiconductor devices
#719Semiconductor process for modifying shape of recess
#720METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE
#721Method for manufacturing semiconductor substrate
#722Reducing variation by using combination epitaxy growth
#723III-V device and method for manufacturing thereof
#724Gradient dopant of strained substrate manufacturing method of semiconductor device
#725Termination design for nanotube MOSFET
#726Epitaxial growth of crystalline material
#727Semiconductor structure with different fins of FinFETs
#728METHOD OF FORMING A GERMANIUM THIN FILM
#729Method of growing heteroepitaxial single crystal or large grained semiconductor films on glass substrates and devices thereon
#730Method for manufacturing a thick epitaxial layer of gallium nitride on a silicon or similar substrate and layer obtained using said method
#731Substrate processing apparatus including exhaust ports and substrate processing method
#732Integrated circuits having source/drain structure
#733Planar nonpolar group-III nitride films grown on miscut substrates
#734Carbon-doped cap for a raised active semiconductor region
#735Methods of forming epitaxial layers
#736Strained transistor integration for CMOS
#737Crystal laminate structure and method for producing same
#738CRYSTAL GROWTH METHOD FOR NITRIDE SEMICONDUCTOR HAVING A MULTIQUANTUM WELL STRUCTURE
#739Thin film formation method
#740Methods of forming hetero-layers with reduced surface roughness and bulk defect density of non-native surfaces and the structures formed thereby
#741Method of forming an epitaxial layer on a substrate, and apparatus and system for performing the same
#742Method for producing group III nitride semiconductor and template substrate
#743Inorganic nanostructure reactive direct-write and growth
#744Controlled manufacturing method of metal oxide semiconductor and metal oxide semiconductor structure having controlled growth crystallographic plane
#745System and method for depositing a material on a substrate
#746Self-aligned contact structure for replacement metal gate
#747Method and system for carbon doping control in gallium nitride based devices
#748Semiconductor alloy fin field effect transistor
#749Semiconductor device having doped epitaxial region and its methods of fabrication
#750METHOD FOR PRODUCING A GRAPHENE NANO-RIBBON
#751Method of selective growth without catalyst on a semiconducting structure
#752Method for manufacturing silicon carbide semiconductor device
#753Planarized semiconductor particles positioned on a substrate
#754Device with nitride nanowires having a shell layer and a continuous layer
#755Bulk fin-field effect transistors with well defined isolation
#756Graphene nanoribbons and carbon nanotubes fabricated from SiC fins or nanowire templates
#757Low temperature epitaxy of a semiconductor alloy including silicon and germanium employing a high order silane precursor
#758Bulk fin-field effect transistors with well defined isolation
#759Method of fabricating a device with a concentration gradient and the corresponding device
#760Method for selective growth of highly doped group IV—Sn semiconductor materials
#761Atomic Layer Deposition with Rapid Thermal Treatment
#762Ultrathin body fully depleted silicon-on-insulator integrated circuits and methods for fabricating same
#763Method and apparatus for substrate-mask alignment
#764Integration scheme for changing crystal orientation in hybrid orientation technology (HOT) using direct silicon bonded (DSB) substrates
#765Method of epitaxial doped germanium tin alloy formation
#766Semiconductor structures and methods with high mobility and high energy bandgap materials
#767Method for fabricating FinFETs and semiconductor structure fabricated using the method
#768Nanoscale emitters with polarization grading
#769FinFET and method of fabricating the same
#770Replacement source/drain finFET fabrication
#771Mask for deposition and deposition apparatus including the same
#772Methods for depositing group III-V layers on substrates
#773Method and system for carbon doping control in gallium nitride based devices
#774Formation of devices by epitaxial layer overgrowth
#775Bulk fin-field effect transistors with well defined isolation
#776Bulk fin-field effect transistors with well defined isolation
#777Variation resistant metal-oxide-semiconductor field effect transistor (MOSFET)
#778System and method for depositing a material on a substrate
#779Epitaxy profile engineering for FinFETs
#780DOPED ELONGATED SEMICONDUCTORS, GROWING SUCH SEMICONDUCTORS, DEVICES INCLUDING SUCH SEMICONDUCTORS AND FABRICATING SUCH DEVICES
#781Quantum tunneling devices and circuits with lattice-mismatched semiconductor structures
#782Low temperature selective epitaxy of silicon germanium alloys employing cyclic deposit and etch
#783Diode-based devices and methods for making the same
#784Semiconductor device with SEG film active region
#785Semiconductor device and manufacturing method of the semiconductor device
#786Graphene nanoribbons and carbon nanotubes fabricated from SiC fins or nanowire templates
#787PROCESS FOR FORMING AN EPITAXIAL LAYER, IN PARTICULAR ON THE SOURCE AND DRAIN REGIONS OF FULLY-DEPLETED TRANSISTORS
#788Method and apparatus for the selective deposition of epitaxial germanium stressor alloys
#789Selective epitaxial formation of semiconductive films
#790Method of manufacturing semiconductor device
#791Semiconductor integrated circuit devices having different thickness silicon-germanium layers
#792System for producing polycrystalline silicon, apparatus for producing polycrystalline silicon, and process for producing polycrystalline silicon
#793Method for selective deposition of a semiconductor material
#794Planar nonpolar group-III nitride films grown on miscut substrates
#795Semiconductor substrate suitable for the realisation of electronic and/or optoelectronic devices and relative manufacturing process
#796Integrated circuits and fabrication methods thereof
#797Epitaxial growth of crystalline material
#798Strained structure of a p-type field effect transistor
#799Method of fabricating semiconductor device
#800Formation of devices by epitaxial layer overgrowth
#801CRYSTAL GROWTH OF M-PLANE AND SEMIPOLAR PLANES OF (Al, In, Ga, B)N ON VARIOUS SUBSTRATES
#802Methods of manufacturing semiconductor devices
#803Method for treating group III nitride semiconductor
#804Epitaxial growth of silicon doped with carbon and phosphorus using hydrogen carrier gas
#805GRADED HIGH GERMANIUM COMPOUND FILMS FOR STRAINED SEMICONDUCTOR DEVICES
#806Methods of evaluating epitaxial growth and methods of forming an epitaxial layer
#807Method of zinc oxide film grown on the epitaxial lateral overgrowth gallium nitride template
#808Method of manufacturing a semiconductor device and substrate processing apparatus
#809Method of forming strained epitaxial carbon-doped silicon films
#810Methods and apparatus for selective epitaxy of Si-containing materials and substitutionally doped crystalline Si-containing material
#811Pulsed growth of catalyst-free growth of GaN nanowires and application in group III nitride semiconductor bulk material
#812MANUFACTURING METHOD OF SUPERJUNCTION STRUCTURE
#813Reducing variation by using combination epitaxy growth
#814NMOS transistor devices and methods for fabricating same
#815Laterally varying II-VI alloys and uses thereof
#816Method for fabricating a strained structure
#817Thin film formation method and film formation apparatus
#818Method for fabricating a semiconductor device
#819Vertical group III-V nanowires on si, heterostructures, flexible arrays and fabrication
#820System and method for depositing a material on a substrate
#821Semiconductor substrate, electronic device and method for manufacturing semiconductor substrate
#822METHOD FOR FORMING CHANNEL LAYER WITH HIGH GE CONTENT ON SUBSTRATE
#823Semiconductor heterostructure nanowire devices
#824Nitride semiconductor device
#825Epitaxy profile engineering for FinFETs
#826Nonvolative memory device using semiconductor nanocrystals and method of forming same
#827Crystal growth method for nitride semiconductor having a multiquantum well structure
#828Compound semiconductor device and manufacturing method thereof
#829SEMICONDUCTOR DEVICE WAFER, SEMICONDUCTOR DEVICE, DESIGN SYSTEM, MANUFACTURING METHOD AND DESIGN METHOD
#830Semiconductor device having doped epitaxial region and its methods of fabrication
#831Nitride nanowires and method of producing such
#832DEFECT-FREE GROUP III - NITRIDE NANOSTRUCTURES AND DEVICES USING PULSED AND NON-PULSED GROWTH TECHNIQUES
#833Nonvolatile memory device using semiconductor nanocrystals and method of forming same
#834Light emitting device and method of fabricating the same
#835Integration scheme for changing crystal orientation in hybrid orientation technology (HOT) using direct silicon bonded (DSB) substrates
#836Compositions and Methods for Forming a Semiconducting and/or Silicon-Containing Film, and Structures Formed Therefrom
#837Quantum tunneling devices and circuits with lattice-mismatched semiconductor structures
#838Method for manufacturing semiconductor substrate
#839Semiconductor device and method of manufacturing the same
#840SELECTIVE DEPOSITION OF SIGE LAYERS FROM SINGLE SOURCE OF SI-GE HYDRIDES
#841METHOD OF FABRICATING SEMICONDUCTOR DEVICE
#842Rounded three-dimensional germanium active channel for transistors and sensors
#843Methods for forming silicon germanium layers
#844Silicon nitride hardstop encapsulation layer for STI region
#845Method of fabricating free-form, high-aspect ratio components for high-current, high-speed microelectronics
#846Surface emitting laser array and production method therefor
#847Thin-walled structures
#848Semiconductor wafer, semiconductor thin film, and method for manufacturing semiconductor thin film devices
#849NMOS transistor devices and methods for fabricating same
#850Reducing silicide resistance in silicon/germanium-containing drain/source regions of transistors
#851Formation of devices by epitaxial layer overgrowth
#852Method of making group III nitride-based compound semiconductor
#853Method for manufacturing semiconductor device with SEG film active region
#854Method for manufacturing semiconductor device
#855Localized synthesis and self-assembly of nanostructures
#856Diode-based devices and methods for making the same
#857Nitride nanowires and method of producing such
#858Light emitting device using a micro-rod and method of manufacturing a light emitting device
#859Semiconductor device and method for manufacturing semiconductor device
#860Methods for making and using halosilylgermanes
#861Nitride semiconductor light-emitting device
#862Graded high germanium compound films for strained semiconductor devices
#863Structure comprises an As-deposited doped single crystalline Si-containing film
#864Field effect transistor structure with abrupt source/drain junctions
#865High efficiency lighting device and method for fabricating the same
#866Fabricating semiconductor structures
#867Method for producing group III nitride semiconductor and template substrate
#868Method of zinc oxide film grown on the epitaxial lateral overgrowth gallium nitride template
#869Doped elongated semiconductors, growing such semiconductors, devices including such semiconductors and fabricating such devices
#870Semiconductor devices having faceted silicide contacts, and related fabrication methods
#871Zinc sulfide substrates for group III-nitride epitaxy and group III-nitride devices
#872MASK PATTERN FOR SELECTIVE AREA GROWTH OF SEMICONDUCTOR LAYER AND SELECTIVE AREA GROWTH METHOD USING THE MASK PATTERN FOR SEMICONDUCTOR LAYER
#873FABRICATION AND STRUCTURES OF CRYSTALLINE MATERIAL
#874Photoelectric conversion device and manufacturing method thereof
#875Method for fabricating a micro-electronic device equipped with semi-conductor zones on an insulator with a horizontal GE concentration gradient
#876NANOSTRUCTURE AND USES THEREOF
#877Strained transistor integration for CMOS
#878Single crystal substrate and method of fabricating the same
#879Method of forming self-aligned low resistance contact layer
#880Method for forming silicon-containing materials during a photoexcitation deposition process
#881Substrate processing method and substrate processing apparatus
#882Epitaxial growth of crystalline material
#883Nonvolatile memory device using semiconductor nanocrystals and method forming same
#884Electrodeposition method for forming Ge on semiconductor substrates
#885Semiconductor heterostructure nanowire devices
#886Nitride semiconductor device having a zinc-based substrate
#887Semiconductor Substrate and Method for Manufacturing the Same
#888METHOD FOR FORMING CARBON SILICON ALLOY (CSA) AND STRUCTURES THEREOF
#889Method of manufacturing semiconductor device and substrate processing apparatus
#890Method of fabricating semiconductor device
#891Methods of fabricating different thickness silicon-germanium layers on semiconductor integrated circuit devices and semiconductor integrated circuit devices fabricated thereby
#892Method for fabricating a semiconductor structures and structures thereof
#893Pulsed growth of catalyst-free growth of GaN nanowires and application in group III nitride semiconductor bulk material
#894Integration scheme for changing crystal orientation in hybrid orientation technology (HOT) using direct silicon bonded (DSB) substrates
#895Method of manufacturing a semiconductor device including forming a single-crystalline semiconductor material in a first area and forming a second device isolation pattern on a second area
#896Integrated circuit system employing selective epitaxial growth technology
#897Method of selectively forming atomically flat plane on diamond surface, diamond substrate produced by the method, and semiconductor device using the same
#898Methods of selectively depositing silicon-containing films
#899Inhibitors for selective deposition of silicon containing films
#900Methods of manufacturing semiconductor devices including a doped silicon layer