207138 ⎘
Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof; Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising crystalline silicon carbide Making n or p doped regions or layers, e.g. using diffusion
Sub-classes:Opaque Thermal Layer for Silicon Carbide Substrates
#2SEMICONDUCTOR DEVICE AND METHOD
#3SILICON CARBIDE SUBSTRATE AND MANUFACTURING METHOD THEREOF
#4TRANSISTOR AND METHOD FOR FABRICATING THE SAME
#5SEMICONDUCTOR DEVICE WITH SELECTIVELY GROWN FIELD OXIDE LAYER IN EDGE TERMINATION REGION
#6Semiconductor device and method
#7SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF
#8Method for making a bipolar junction transistor having an integrated switchable short
#9Semiconductor device and method
#10Method for Producing or Modifying Silicon Carbide-Containing Articles
#11OPTICAL MODULATOR
#12Method of forming a semiconductor device
#13Method for forming a semiconductor device and a semiconductor device
#14Method for thermally processing a substrate and associated system
#15Laser radiation system
#16Silicon carbide semiconductor device and method of manufacturing a silicon carbide semiconductor device
#17Semiconductor device including silicon carbide body and method of manufacturing
#18Semiconductor device and manufacture thereof
#19Semiconductor device and method
#20Semiconductor device including junction material in a trench and manufacturing method
#21Vertical insulated gate turn-off thyristor with intermediate p+ layer in p-base formed using epitaxial layer
#22Implanted dopant activation for wide bandgap semiconductor electronics
#23Method of forming a semiconductor device
#24Laser doping apparatus and laser doping method
#25Doping system, doping method and method for manufacturing silicon carbide semiconductor device
#26Method for forming a semiconductor device and a semiconductor device
#27Method of manufacturing semiconductor device
#28Method of reducing a sheet resistance in an electronic device, and an electronic device
#29Semiconductor device and manufacture thereof
#30Semiconductor device and method for manufacturing semiconductor device
#31Silicon-carbide trench gate MOSFETs and methods of manufacture
#32Method for manufacturing silicon carbide semiconductor device and silicon carbide semiconductor device
#33Method of manufacturing a semiconductor device
#34Semiconductor device and method of manufacturing semiconductor device
#35LASER DOPING APPARATUS AND LASER DOPING METHOD
#36Carbon Vacancy Defect Reduction Method for SiC
#37Method of forming a semiconductor device
#38Method of producing differently doped zones in a silicon substrate, in particular for a solar cell
#39Silicon carbide semiconductor device and manufacturing method of silicon carbide semiconductor device
#40Methods for preparing layered semiconductor structures
#41Silicon-carbide trench gate MOSFETs
#42Method of manufacturing silicon carbide semiconductor device including forming an electric field control region by a laser doping technology
#43Impurity adding apparatus, impurity adding method, and semiconductor element manufacturing method
#44Manufacturing method of semiconductor device
#45Method for doping impurities, method for manufacturing semiconductor device
#46Method for manufacturing silicon carbide semiconductor device by selectively removing silicon from silicon carbide substrate to form protective carbon layer on silicon carbide substrate for activating dopants
#47Method of manufacturing silicon carbide semiconductor device by forming metal-free protection film
#48Silicon carbide semiconductor device and method for producing the same
#49Method for manufacturing silicon carbide semiconductor device and silicon carbide semiconductor device
#50Method for manufacturing silicon carbide (SiC) semiconductor device by introducing nitrogen concentration of 5X1019 cm-3 or more at a boundary surface between thermal oxide film and the SiC substrate and then removing the thermal oxide film
#51Impurity introducing method, impurity introducing apparatus, and method of manufacturing semiconductor element
#52Method of manufacturing silicon carbide semiconductor device
#53Method for fabricating semiconductor apparatus
#54Semiconductor device and method for manufacturing same
#55SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME
#56Semiconductor device and method for producing the same
#57Semiconductor device and method of manufacturing the same
#58Semiconductor device
#59Silicon carbide semiconductor device and method for producing the same
#60Silicon carbide semiconductor device and method of manufacturing the same
#61Method for manufacturing silicon carbide semiconductor device
#62Doping of a substrate via a dopant containing polymer film
#63Semiconductor device and method for manufacturing same
#64Semiconductor device and method for manufacturing the semiconductor device
#65SiC semiconductor device and method of manufacturing the same
#66Semiconductor device and method for fabricating the same
#67Semiconductor device and method of manufacturing the same
#68Silicon carbide semiconductor device and method of manufacturing the same
#69Lightly doped silicon carbide wafer and use thereof in high power devices
#70SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME
#71Process of making a solid state energy conversion device
#72Solid state energy photovoltaic device
#73Silicon carbide semiconductor device and manufacturing method thereof
#74Systems and methods for co-doping wide band gap materials
#75Silicon carbide semiconductor device and manufacturing method thereof
#76Lightly doped silicon carbide wafer and use thereof in high power devices
#77Low temperature impurity doping of silicon carbide
#78Method for doping impurities
#79Silicon-rich nickel-silicide ohmic contacts for SiC semiconductor devices
#80Power devices and methods of manufacture
#81Lightly doped silicon carbide wafer and use thereof in high power devices
#82Semiconductor device
#83Silicon-rich nickel-silicide ohmic contacts for SiC semiconductor devices
#84System and method for fabricating diodes
#85Methods of forming power semiconductor devices using boule-grown silicon carbide drift layers and power semiconductor devices formed thereby
#86Flexible monolithic all polycrystalline silicon carbide neural interface device and method of manufacture
#87Semiconductor device and method
#88Active area designs for charge-balanced diodes
#89Method for fabricating semiconductor apparatus