207140 ⎘
Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof; Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising crystalline silicon carbide; Making n or p doped regions or layers, e.g. using diffusion using ion implantation using masks
Electric field shielding in silicon carbide metal-oxide-semiconductor (MOS) device cells
#302Electric field shielding in silicon carbide metal-oxide-semiconductor (MOS) devices having an optimization layer
#303Power Semiconductor Device with Charge Balance Design
#304Electric field shielding in silicon carbide metal-oxide-semiconductor (MOS) device cells using channel region extensions
#305Semiconductor device and manufacturing method thereof
#306Schottky barrier diode and manufacturing method thereof
#307SEMICONDUCTOR DEVICE
#308Semiconductor storage device
#309Method for manufacturing semiconductor device
#310Silicon carbide semiconductor device and method of manufacturing the same
#311Semiconductor device
#312Planar multi-implanted JFET
#313Semiconductor device fabrication method
#314Semiconductor device manufacturing method and semiconductor device
#315Trench vertical JFET with ladder termination
#316SILICON CARBIDE SEMICONDUCTOR DEVICE, AND METHOD FOR MANUFACTURING SAME
#317Planar triple-implanted JFET
#318Silicon-carbide transistor device with a shielded gate
#319Semiconductor device VDMOS having a gate insulating film having a high dielectric constant portion contacting the drift region for relaxing an electric field generated in the gate insulating film
#320Semiconductor device
#321Semiconductor device and method of manufacturing the same
#322Particle irradiation apparatus, beam modifier device, and semiconductor device including a junction termination extension zone
#323Semiconductor device
#324Semiconductor device, and method for manufacturing the same
#325VERTICAL JFET MADE USING A REDUCED MASK SET
#326Vertical JFET made using a reduced mask set
#327Diode
#328Silicon-carbide trench gate MOSFETs
#329Method for manufacturing silicon carbide semiconductor device
#330Hybrid gate dielectrics for semiconductor power devices
#331Method of manufacturing silicon carbide semiconductor device including forming an electric field control region by a laser doping technology
#332SEMICONDUCTOR DEVICE WITH JUNCTION TERMINATION EXTENSION
#333Bipolar transistor device with an emitter having two types of emitter regions
#334Semiconductor device and method for manufacturing the same
#335Method for manufacturing silicon carbide semiconductor device by selectively removing silicon from silicon carbide substrate to form protective carbon layer on silicon carbide substrate for activating dopants
#336Method of manufacturing silicon carbide semiconductor device by using protective films to activate dopants in the silicon carbide semiconductor device
#337SiC-based superjunction semiconductor device
#338Method of manufacturing silicon carbide semiconductor device by forming metal-free protection film
#339Silicon carbide semiconductor device and method of manufacturing the same
#340Silicon carbide semiconductor device and manufacturing method for same
#341Silicon carbide semiconductor device and method for manufacturing the same
#342Method of forming a silicon-carbide device with a shielded gate
#343Method for manufacturing silicon carbide semiconductor device
#344Silicon carbide semiconductor device and manufacturing method of the same
#345SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME
#346Semiconductor device and method for manufacturing same
#347Method of manufacturing a vertical junction field effect transistor
#348Method of manufacturing silicon carbide semiconductor device
#349Semiconductor device
#350Method for manufacturing a silicon carbide semiconductor element
#351Method of manufacturing silicon carbide semiconductor device
#352Method of producing a junction field-effect transistor (JFET)
#353Method of manufacturing a vertical semiconductor device
#354Semiconductor device including an electric field buffer layer and method for manufacturing same
#355Method for manufacturing semiconductor device
#356Semiconductor device and fabrication method thereof
#357Semiconductor device and semiconductor device manufacturing method
#358Junction field effect transistor cell with lateral channel region
#359Semiconductor device with junction termination extension
#360Silicon carbide semiconductor device including conductivity layer in trench
#361Semiconductor device and method of manufacturing the same
#362Semiconductor device and method for manufacturing the semiconductor device
#363Silicon carbide semiconductor device
#364Semiconductor device and method of manufacturing the same
#365Bidirectional device, bidirectional device circuit and power conversion apparatus
#366Method for manufacturing a silicon carbide DIMOSFET
#367Silicon carbide semiconductor device and method of manufacturing the same
#368Method of manufacturing silicon carbide semiconductor device
#369Silicon carbide semiconductor apparatus and method of manufacturing same
#370Lateral high-voltage transistor and method for manufacturing the same
#371Diffused junction termination structures for silicon carbide devices
#372Semiconductor device
#373Manufacturing method of silicon carbide semiconductor device
#374Method of manufacturing semiconductor device
#375Method for manufacturing silicon carbide semiconductor device
#376SWITCHING DEVICE AND METHOD FOR MANUFACTURING THE SAME
#377METHOD FOR MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE
#378SEMICONDUCTOR DEVICE
#379Semiconductor device, and method for manufacturing the same
#380Method of manufacturing silicon carbide semiconductor device
#381Manufacturing method of silicon carbide semiconductor device
#382SiC devices with high blocking voltage terminated by a negative bevel
#383Semiconductor device and fabrication method thereof
#384Semiconductor device
#385Semiconductor device and process for production thereof
#386Semiconductor device and process for production thereof
#387Semiconductor device and manufacturing method of the same
#388Method for manufacturing silicon carbide semiconductor device
#389Method of manufacturing silicon carbide semiconductor device
#390Power switching semiconductor devices including rectifying junction-shunts
#391Semiconductor device and semiconductor device manufacturing method
#392Method for manufacturing silicon carbide semiconductor device
#393Silicon carbide semiconductor device
#394Semiconductor device and method of manufacturing the same
#395Substrate composed of silicon carbide with thin film, semiconductor device, and method of manufacturing a semiconductor device
#396Semiconductor device and method of manufacturing semiconductor device
#397Method for providing semiconductors having self-aligned ion implant
#398Method for producing semiconductor element
#399Method of manufacturing silicon carbide semiconductor device
#400Forming impurity regions in silicon carbide devices
#401Annealing method for semiconductor device with silicon carbide substrate and semiconductor device
#402Methods of fabricating transistors using laser annealing of source/drain regions
#403Semiconductor device, and method for manufacturing the same
#404Semiconductor device and method for manufacturing the same
#405METHOD OF MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE
#406Silicon carbide semiconductor device
#407Diffused junction termination structures for silicon carbide devices and methods of fabricating silicon carbide devices incorporating same
#408Silicon carbide semiconductor device with Schottky barrier diode and method of manufacturing the same
#409MOSFET devices and methods of making
#410Method for manufacturing ion implantation mask, and method for manufacturing silicon carbide semiconductor device
#411Silicon carbide semiconductor device and manufacturing method thereof
#412Methods of forming power switching semiconductor devices including rectifying junction-shunts
#413Method for forming gate oxide film of sic semiconductor device using two step oxidation process
#414Method for fabricating junction termination extension with formation of photosensitive dopant mask to control doping profile and lateral width for high-voltage electronic devices
#415Method for manufacturing semiconductor device using multiple ion implantation masks
#416METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
#417Method of manufacturing silicon carbide semiconductor device
#418ANNEALING METHOD FOR SEMICONDUCTOR DEVICE WITH SILICON CARBIDE SUBSTRATE AND SEMICONDUCTOR DEVICE
#419Silicon carbide semiconductor device and method of manufacturing the same
#420Method of forming mask pattern
#421SiC MOSFETs and self-aligned fabrication methods thereof
#422SILICON CARBIDE MOS FIELD-EFFECT TRANSISTOR AND PROCESS FOR PRODUCING THE SAME
#423Methods for fabricating semiconductor structures
#424Silicon carbide bipolar semiconductor device
#425Method of manufacturing silicon carbide semiconductor device
#426Semiconductor device and method for forming same
#427Method for manufacturing SiC semiconductor device
#428Method for manufacturing SIC semiconductor device
#429Method of fabricating semiconductor device
#430Silicon carbide semiconductor device
#431Silicon carbide semiconductor device and manufacturing method thereof
#432METHOD FOR FABTRICATING SEMICONDUCTOR DEVICE
#433Silicon carbide devices and method of making
#434Power switching semiconductor devices including rectifying junction-shunts
#435SiC MOSFETs and self-aligned fabrication methods thereof
#436Lateral field effect transistor and its fabrication comprising a spacer layer above and below the channel layer
#437Semiconductor device and manufacturing method thereof
#438Semiconductor device and manufacturing method thereof with a recessed backside substrate for breakdown voltage blocking
#439Silicon carbide semiconductor device and method for producing the same
#440Method of manufacturing silicon carbide semiconductor device
#441Ion implantation mask and method for manufacturing same, silicon carbide semiconductor device using ion implantation mask, and method for manufacturing same
#442High voltage silicon carbide devices having bi-directional blocking capabilities and methods of fabricating the same
#443Graded junction termination extensions for electronic devices
#444Method of manufacturing a SiC vertical MOSFET
#445Semiconductor device having multiple-zone junction termination extension, and method for fabricating the same
#446Method of fabricating semiconductor device
#447Silicon carbide semiconductor device and its manufacturing method
#448Semiconductor structures and manufacturing methods thereof
#449Method and manufacture of robust, high-performance devices
#450Performance SiC Schottky diodes
#451Silicon carbide integrated circuit including P-N junction photodiode
#452Silicon carbide integrated circuit active photodetector
#453Power schottky diodes having local current spreading layers and methods of forming such devices
#454Semiconductor device