207142 ⎘
Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof; Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising crystalline silicon carbide Changing the shape of the semiconductor body, e.g. forming recesses,
Semiconductor device and method of manufacturing the same
#302Silicon carbide semiconductor device and manufacturing method thereof
#303SILICON CARBIDE SEMICONDUCTOR DEVICE
#304Single crystal compound semiconductor substrate
#305COMBINED SUBSTRATE HAVING SILICON CARBIDE SUBSTRATE
#306SILICON CARBIDE SUBSTRATE
#307Manufacturing method of silicon carbide single crystal
#308Semiconductor chip and process for production thereof
#309Chemical mechanical polishing of silicon carbide comprising surfaces
#310Plasma etching method
#311METHOD FOR MANUFACTURING SILICON CARBIDE SUBSTRATE AND SILICON CARBIDE SUBSTRATE
#312METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE
#313METHOD FOR MANUFACTURING SILICON CARBIDE SUBSTRATE, SILICON CARBIDE SUBSTRATE, AND SEMICONDUCTOR DEVICE
#314Composition for advanced node front-and back-end of line chemical mechanical polishing
#315METHOD FOR MANUFACTURING SILICON CARBIDE SUBSTRATE, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, SILICON CARBIDE SUBSTRATE, AND SEMICONDUCTOR DEVICE
#316METHOD FOR MANUFACTURING SILICON CARBIDE SUBSTRATE, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, SILICON CARBIDE SUBSTRATE, AND SEMICONDUCTOR DEVICE
#317Device formed using a hard mask and etch stop layer
#318SEMICONDUCTOR SUBSTRATE
#319Semiconductor device and method of manufacturing semiconductor device
#320Method for providing semiconductors having self-aligned ion implant
#321Manufacturing method of semiconductor device
#322Semiconductor device and method for fabricating the same
#323Chemical mechanical polishing of silicon carbide comprising surfaces
#324Semiconductor device and method for fabricating the same
#325WATER-BASED POLISHING SLURRY FOR POLISHING SILICON CARBIDE SINGLE CRYSTAL SUBSTRATE, AND POLISHING METHOD FOR THE SAME
#326Silicon carbide semiconductor device and method of manufacturing the same
#327Method of etching a device using a hard mask and etch stop layer
#328Semiconductor device and method for fabricating the same
#329Silicon carbide power devices including P-type epitaxial layers and direct ohmic contacts
#330Manufacturing method of a silicon carbide semiconductor device
#331Method for fabricating semiconductor device
#332Method of manufacturing silicon carbide semiconductor device
#333Silicon carbide polishing method utilizing water-soluble oxidizers
#334Mask structure for manufacture of trench type semiconductor device
#335Semiconductor device and manufacturing method thereof
#336Semiconductor device and method of producing the same
#337Silicon carbide dimpled substrate
#338Method for manufacturing semiconductor device having via holes
#339Method of manufacturing SiC single crystal wafer
#340Method for manufacturing silicon carbide semiconductor devices
#341Semiconductor device and method for fabricating the same
#342Schottky power diode with SiCOI substrate and process for making such diode
#343Selective etching of silicon carbide films
#344Semiconductor device and method for fabricating the same
#345Laser edge shaping for semiconductor wafers
#346Off axis laser-based surface processing operations for semiconductor wafers
#347Flexible monolithic all polycrystalline silicon carbide neural interface device and method of manufacture
#348Methods for forming polycrystalline channel on dielectric films with controlled grain boundaries
#349Semiconductor device and method for fabricating the same
#350Semiconductor wafer thinning systems and related methods
#351Wide bandgap semiconductor device with vertical superjunction edge termination for the drift region
#352Method of fabricating semiconductor device
#353Integrated magnetic tunnel junction (MTJ) in back end of line (BEOL) interconnects
#354Silicon carbide static induction transistor and process for making a silicon carbide static induction transistor