207146 ⎘
Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof; Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising crystalline silicon carbide; Making electrodes Schottky electrodes
ELECTRONIC DEVICE WITH IMPROVED RELIABILITY
#2SEMICONDUCTOR DEVICE
#3METHOD FOR PRODUCING A SILICON CARBIDE SEMICONDUCTOR COMPONENT
#4ONE-STEP FRONT OHMIC AND SCHOTTKY CONTACT FORAMTION ON SIC POWER DEVICES WITH LASER ANNEALING
#5FORMING A SCHOTTKY CONTACT IN AN ELECTRONIC DEVICE, SUCH AS A JBS OR MPS DIODE, AND ELECTRONIC DEVICE WITH SCHOTTKY CONTACT
#6SILICON CARBIDE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD
#7SEMICONDUCTOR DEVICES WITH LOW BARRIER HEIGHT SCHOTTKY CONTACTS
#8SEMICONDUCTOR DEVICE HAVING A JUNCTION PORTION CONTACTING A SCHOTTKY METAL
#9Manufacturing method of a semiconductor device with efficient edge structure
#10SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE
#11METHOD FOR MANUFACTURING A SIC ELECTRONIC DEVICE WITH REDUCED HANDLING STEPS, AND SIC ELECTRONIC DEVICE
#12Method for producing a silicon carbide semiconductor component
#13MANUFACTURING METHOD OF TRENCH-TYPE POWER DEVICE
#14Semiconductor device having a junction portion contacting a Schottky metal
#15Method of manufacturing semiconductor device
#16Manufacturing method of a semiconductor device with efficient edge structure
#17Semiconductor device, method of manufacturing semiconductor device, inverter circuit, drive device, vehicle, and elevator
#18WIDE GAP SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING WIDE GAP SEMICONDUCTOR DEVICE
#19Junction barrier Schottky diode device and method for fabricating the same
#20PROCESS FOR MANUFACTURING A VERTICAL CONDUCTION SILICON CARBIDE ELECTRONIC DEVICE AND VERTICAL CONDUCTION SILICON CARBIDE ELECTRONIC DEVICE
#21SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE
#22Junction barrier Schottky diode device and method for fabricating the same
#23SEMICONDUCTOR DEVICE
#24SiC devices with shielding structure
#25Silicon carbide semiconductor device
#26Semiconductor device, method of manufacturing semiconductor device, inverter circuit, drive device, vehicle, and elevator
#27Merged PiN Schottky (MPS) Diode With Plasma Spreading Layer And Manufacturing Method Thereof
#28Merged PiN Schottky (MPS) Diode With Multiple Cell Designs And Manufacturing Method Thereof
#29Method for manufacturing a sic electronic device with reduced handling steps, and sic electronic device
#30Method for producing a silicon carbide semiconductor component
#31Manufacturing method of a semiconductor device with efficient edge structure
#32Semiconductor device having a junction portion contacting a Schottky metal
#33Method of manufacturing silicon carbide semiconductor device
#34Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device
#35Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device
#36METAL TERMINAL EDGE FOR SEMICONDUCTOR STRUCTURE AND METHOD OF FORMING THE SAME
#37Semiconductor device having a junction portion contacting a Schottky metal
#38Mixed trench junction barrier Schottky diode and method fabricating same
#39Semiconductor device
#40Silicon carbide trench schottky barrier diode using polysilicon and a method of manufacturing the same
#41Semiconductor device
#42Low turn-on voltage silicon carbide rectifiers
#43Semiconductor device and method of manufacturing semiconductor device
#44Silicon carbide semiconductor device and manufacturing method therefor
#45Semiconductor device and method of manufacturing the same
#46Semiconductor device and method of manufacturing the same
#47Method of manufacturing semiconductor device
#48Semiconductor device and method of manufacturing semiconductor device
#49Silicon carbide semiconductor device having a gate electrode formed in a trench structure
#50Silicon carbide semiconductor device with horizontal and vertical current flow
#51Silicon carbide semiconductor component comprising trench gate structures and shielding regions
#52Manufacturing method of a semiconductor device with efficient edge structure
#53Method of manufacturing silicon carbide semiconductor device
#54Semiconductor device with non-ohmic contact between SiC and a contact layer containing metal nitride
#55Method of manufacturing semiconductor apparatus and semiconductor apparatus
#56Semiconductor device
#57Semiconductor device having a junction portion contacting a Schottky metal
#58Semiconductor device with improved field layer
#59Method of manufacturing semiconductor device
#60Semiconductor device
#61TRENCH TYPE JUNCTION BARRIER SCHOTTKY DIODE WITH VOLTAGE REDUCING LAYER AND MANUFACTURING METHOD THEREOF
#62Gas sensors with contact pads
#63SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE
#64Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device
#65Schottky barrier diode
#66Water-insensitive gas sensor using polymer-encapsulated Pt—AlGaN/GaN diodes
#67Methods for manufacturing a semiconductor device having a non-ohmic contact formed between a semiconductor material and an electrically conductive contact layer
#68Semiconductor device having an ohmic electrode including a nickel silicide layer
#69Method of manufacturing semiconductor device
#70Method of manufacturing semiconductor device
#71High voltage semiconductor devices and methods of making the devices
#72Methods for Forming a Plurality of Semiconductor Devices on a Plurality of Semiconductor Wafers
#73Semiconductor device and method for manufacturing same
#74Semiconductor device having a junction portion contacting a Schottky metal
#75Method for manufacturing a wide bandgap junction barrier schottky diode
#76Schottky barrier structure for silicon carbide (SiC) power devices
#77Production of an integrated circuit including electrical contact on SiC
#78METHOD AND APPARATUS FOR MANUFACTURING SEMICONDUCTOR ELEMENT, AND SEMICONDUCTOR ELEMENT
#79Forming a contact layer on a semiconductor body
#80Method for manufacturing semiconductor device
#81Semiconductor device with schottky barrier diode
#82Semiconductor device
#83Semiconductor device and method for manufacturing the same
#84Semiconductor device with substantially equal impurity concentration JTE regions in a vicinity of a junction depth
#85Methods for forming a plurality of semiconductor devices on a plurality of semiconductor wafers
#86Semiconductor device manufacturing method
#87METHOD OF MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE
#88Method of manufacturing silicon carbide semiconductor device including forming an electric field control region by a laser doping technology
#89Method for manufacturing a semiconductor device having a Schottky contact
#90Semiconductor device and method for manufacturing the same
#91Power semiconductor rectifier with controllable on-state voltage
#92Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device
#93SILICON CARBIDE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD FOR SAME
#94Method for doping impurities, method for manufacturing semiconductor device
#95Silicon carbide semiconductor device
#96Semiconductor device having a metal-semiconductor junction and manufacturing therefor
#97Method for manufacturing a semiconductor device comprising a metal nitride layer and semiconductor device
#98Method of manufacturing a device by locally heating one or more metalization layers and by means of selective etching
#99Silicon carbide device and a method for forming a silicon carbide device
#100Silicon carbide semiconductor device
#101Epitaxial metallic transition metal nitride layers for compound semiconductor devices
#102Semiconductor device with similar impurity concentration JTE regions
#103Wide bandgap high-density semiconductor switching device and manufacturing process thereof
#104Semiconductor device with trench structure and manufacturing method thereof
#105Method for yield improvement of TMBS devices
#106Silicon carbide semiconductor device
#107Silicon carbide semiconductor device and method for manufacturing same
#108Semiconductor device and method for producing the same
#109Semiconductor device with first and second electrodes forming schottky junction with silicon carbide semiconductor layer and method of manufacturing the same
#110Schottky barrier diode and method of manufacturing the same
#111Semiconductor device having schottky junction between substrate and drain electrode
#112Semiconductor device having a junction portion contacting a schottky metal
#113Wide band gap semiconductor apparatus and fabrication method thereof
#114Devices including ultra-short gates and methods of forming same
#115Fabrication method of silicon carbide semiconductor apparatus and silicon carbide semiconductor apparatus fabricated thereby
#116Field effect transistor incorporating a Schottky diode
#117Silicon carbide semiconductor device
#118Semiconductor device and method of manufacturing the same
#119Silicon carbide device and a method for forming a silicon carbide device
#120Method of fabricating a gallium nitride merged P-i-N Schottky (MPS) diode
#121I-layer vanadium-doped PIN type nuclear battery and the preparation process thereof
#122Electronic device
#123Silicon carbide semiconductor device and method for manufacturing same
#124Semiconductor device and method for producing the same
#125Silicon carbide semiconductor device and method for manufacturing the same
#126Method of manufacturing silicon carbide semiconductor device
#127Production of an integrated circuit including electrical contact on SiC
#128Method and system for fabricating edge termination structures in GaN materials
#129Method for manufacturing semiconductor device including Schottky electrode
#130Method for manufacturing silicon carbide schottky barrier diode
#131Method of fabricating a gallium nitride merged P-i-N Schottky (MPS) diode
#132Epitaxial wafer and semiconductor element
#133SEMICONDUCTOR DEVICE, COMBINED SUBSTRATE, AND METHODS FOR MANUFACTURING THEM
#134Silicon carbide semiconductor device and method for manufacturing same
#135SILICON CARBIDE SUBSTRATE, EPITAXIAL LAYER PROVIDED SUBSTRATE, SEMICONDUCTOR DEVICE, AND METHOD FOR MANUFACTURING SILICON CARBIDE SUBSTRATE
#136Method for manufacturing silicon carbide semiconductor device
#137Method for manufacturing silicon carbide semiconductor device
#138Semiconductor devices including schottky diodes having overlapping doped regions and methods of fabricating same
#139Semiconductor device and method of manufacturing semiconductor device
#140Semiconductor device manufacturing method
#141SiC semiconductor device having Schottky barrier diode and method for manufacturing the same
#142Semiconductor device and manufacturing method of semiconductor device
#143Method of manufacturing semiconductor device
#144SCHOTTKY BARRIER DIODE (SBD) AND ITS OFF-SHOOT MERGED PN/SCHOTTKY DIODE OR JUNCTION BARRIER SCHOTTKY (JBS) DIODE
#145Semiconductor device having a groove and a junction termination extension layer surrounding a guard ring layer
#146Schottky diodes containing high barrier metal islands in a low barrier metal layer and methods of forming the same
#147Single-crystal silicon carbide ingot, and substrate and epitaxial wafer obtained therefrom
#148Silicon carbide semiconductor device with Schottky barrier diode and method of manufacturing the same
#149Schottky barrier diode
#150Semiconductor device and manufacturing method of the same
#151Method of making silicon carbide semiconductor device having multi-layered passivation film with uneven surfaces
#152Methods of processing semiconductor wafers having silicon carbide power devices thereon
#153Method for manufacturing silicon carbide semiconductor device
#154Schottky barrier semiconductor device and method for manufacturing the same
#155Transparent nanocrystalline diamond contacts to wide bandgap semiconductor devices
#156Method of manufacturing a device by locally heating one or more metallization layers and by means of selective etching
#157Method and device with durable contact on silicon carbide
#158Production of an integrated circuit including electrical contact on SiC
#159Silicon carbide semiconductor device and method for producing the same
#160Methods of processing semiconductor wafers having silicon carbide power devices thereon
#161Schottky diode structure to reduce capacitance and switching losses and method of making same
#162Schottky barrier diode and method of producing the same
#163Silicon carbide-based device contact and contact fabrication method
#164Schottky diode structure to reduce capacitance and switching losses and method of making same
#165Adhesion and/or encapsulation of silicon carbide-based semiconductor devices on ceramic substrates
#166Method and device with durable contact on silicon carbide
#167Schottky power diode with SiCOI substrate and process for making such diode
#168Performance SiC Schottky diodes
#169Semiconductor device
#170Gas sensors with contact pads