H01L21/16 - CPC Classification Index

ClassID:

207157 ⎘

H01L21/16 - CPC Classification

Classification description:

Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof; Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising cuprous oxide or cuprous iodide

Sub-classes:

H01L21/161 » {Preparation of the foundation plate, preliminary treatment oxidation of the foundation plate, reduction treatment} 0
H01L21/168 » {Treatment of the complete device, e.g. electroforming, ageing} 0

Recent Application in this class:

20200152783

Non-contact measurement of a stress in a film on a substrate

20180308971

Non-contact measurement of a stress in a film on a substrate

20160293770

Thin film transistor and manufacturing method thereof

20160087085

Method for manufacturing semiconductor device

20150115260

Stable amorphous metal oxide semiconductor

20150028327

Thin film transistor and method of manufacturing the same

20120168746

Thin film transistor susbtrate including oxide semiconductor

20110127579

Stacked oxide material, semiconductor device, and method for manufacturing the semiconductor device

20100059742

Stable amorphous metal oxide semiconductor

20050130844

Metal oxide semiconductor thin film and method of producing the same