H01L21/161 - CPC Classification

Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof; Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising cuprous oxide or cuprous iodide Preparation of the foundation plate, preliminary treatment oxidation of the foundation plate, reduction treatment

• H01L21/162 » {Preliminary treatment of the foundation plate} 0
• H01L21/164 » {Oxidation and subsequent heat treatment of the foundation plate } 4
• H01L21/165 » {Reduction of the copper oxide, treatment of the oxide layer} 6
• H01L21/167 » {Application of a non-genetic conductive layer} 0