207169 ⎘
Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof; Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AB compounds with or without impurities, e.g. doping materials; Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy characterised by the substrate
Sub-classes:SILICON CHANNEL FOR BONDED 3D NAND DEVICES
#2BUFFER LAYER ON SILICON CARBIDE SUBSTRATE, AND METHOD FOR FORMING BUFFER LAYER
#3Laser irradiation apparatus and method for manufacturing semiconductor device
#4Method for fabricating a semiconductor device
#5Sense amplifier layout for FinFET technology
#6GaN laminate and method of manufacturing the same
#7GaN material and method of manufacturing semiconductor device
#8Laser processing apparatus, semiconductor device manufacturing method, and amorphous silicon crystallization method
#9Method for manufacturing semiconductor device and method for evaluating semiconductor device
#10Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device
#11Laser irradiation apparatus and method for manufacturing semiconductor device
#12Semiconductor Device
#13Sense amplifier layout for FinFET technology
#14Semiconductor device and method for manufacturing same
#15Mirror plate for a fabry-perot interferometer and a fabry-perot interferometer
#16SiC epitaxial wafer and method for manufacturing SiC epitaxial wafer
#17Gallium Nitride Growth on Silicon
#18Sense amplifier layout for FinFET technology
#19Sense amplifier layout for FinFET technology
#20Semiconductor device
#21Method of manufacture for a semiconductor device
#22Group III nitrides on nanopatterned substrates
#23Epitaxial Wafer, Method for Fabricating the Same, and Semiconductor Device Including the Same
#24Semiconductor device
#25Method for molecular adhesion bonding at low pressure
#26Method of manufacture for a semiconductor device
#27Process for manufacturing a power semiconductor device having charge-balance columnar structures on a non-planar surface, and corresponding power semiconductor device
#28Process for manufacturing a power semiconductor device having charge-balance columnar structures on a non-planar surface, and corresponding power semiconductor device
#29Semiconductor device incorporating charge balancing
#30Method for molecular adhesion bonding at low pressure
#31Process for manufacturing a power semiconductor device having charge-balance columnar structures on a non-planar surface, and corresponding power semiconductor device
#32Semiconductor device
#33Method of manufacture for a semiconductor device
#34Semiconductor device
#35Power MOS transistor incorporating fixed charges that balance the charge in the drift region
#36Semiconductor device
#37Methods of treating a silicon carbide substrate for improved epitaxial deposition and resulting structures and devices
#38Methods of treating a silicon carbide substrate for improved epitaxial deposition and resulting structures and devices
#39Methods of treating a silicon carbide substrate for improved epitaxial deposition and resulting structures and devices
#40Methods of treating a silicon carbide substrate for improved epitaxial deposition and resulting structures and devices