207173 ⎘
Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof; Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AB compounds with or without impurities, e.g. doping materials; Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy Selective epilaxial growth, e.g. simultaneous deposition of mono - and non-mono semiconductor materials
Control device and control method for single-wafer processing epitaxial growth apparatus, and epitaxial wafer production system
#2Selective capping processes and structures formed thereby
#3Super-flexible transparent semiconductor film and preparation method thereof
#4Method of forming a source/drain
#5Method for manufacturing a semiconductor device using a patterned dielectric mask and semiconductor device
#6Transistor having confined source/drain regions with wrap-around source/drain contacts
#7Method of forming a source/drain
#8Selective capping processes and structures formed thereby
#9Method for forming epitaxial layer at low temperature
#10GaN laminate and method of manufacturing the same
#11GaN material and method of manufacturing semiconductor device
#12SGT-including pillar-shaped semiconductor device and method for producing the same
#13Method for producing pillar-shaped semiconductor device
#14Multiple gate length device with self-aligned top junction
#15Selective capping processes and structures formed thereby
#16Selective capping processes and structures formed thereby
#17Method for producing pillar-shaped semiconductor device
#18One-dimensional nanostructure growth on graphene and devices thereof
#19Unmerged epitaxial process for FinFET devices with aggressive fin pitch scaling
#20Method of doped germanium formation
#21Integrated method for wafer outgassing reduction
#22One-dimensional nanostructure growth on graphene and devices thereof
#23Unmerged epitaxial process for FinFET devices with aggressive fin pitch scaling
#24Unmerged epitaxial process for FinFET devices with aggressive fin pitch scaling
#25Epitaxial growth techniques for reducing nanowire dimension and pitch
#26FinFET structures having silicon germanium and silicon channels
#27Lattice-mismatched semiconductor structures and related methods for device fabrication
#28Epitaxial film growth on patterned substrate
#29Semiconductor device having buried bit line and method for fabricating the same
#30Methods for forming NMOS EPI layers
#31Lattice-mismatched semiconductor structures and related methods for device fabrication
#32Lattice-mismatched semiconductor structures and related methods for device fabrication
#33Silicon Selective Epitaxial Growth (SEG) applied to a Silicon on Insulator (SOI) wafer to provide a region of customized thickness
#34Semiconductor memory device and method for manufacturing the same
#35One-dimensional nanostructure growth on graphene and devices thereof
#36Elimination of defects in long aspect ratio trapping trench structures