207182 ⎘
Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof; Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AB compounds with or without impurities, e.g. doping materials; Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy using liquid deposition
Sub-classes:Group 13 (III) nitride thick layer formed on an underlying layer having high and low carrier concentration regions with different defect densities
#2Paste composition and method for forming silicon germanium layer
#3Group 13 (III) nitride thick layer formed on an underlying layer having high and low carrier concentration regions with different defect densities
#4Composite substrate, method for fabricating same, function element, and seed crystal substrate
#5Method of forming channel layer of electric device and method of manufacturing electric device using the same
#6Method for modifying and controlling the threshold voltage of thin film transistors