207198 ⎘
Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof; Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AB compounds with or without impurities, e.g. doping materials; Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body Alloying of doping materials with AB compounds
Multilayer structure, method for manufacturing same, semiconductor device, and crystalline film
#2Selective dopant junction for a group III-V semiconductor device
#3Strain relaxation using metal materials and related structures
#4Strain relaxation using metal materials and related structures
#5Methods for forming nanocrystals with position-controlled dopants
#6Ohmic metal contact protection using an encapsulation layer
#7Ohmic metal contact and channel protection in GaN devices using an encapsulation layer
#8Digital alloy FinFET co-integrated with passive resistor with good temperature coefficient
#9Ultra-high pressure doping of materials