ClassID:

207197

H01L21/24 - CPC Classification

Classification description:

Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof; Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AB compounds with or without impurities, e.g. doping materials Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body

Sub-classes:
Recent Application in this class:
#1
20230420246
2023-12-28

SPUTTER TARGETS AND SOURCES FOR SELF-DOPED SOURCE AND DRAIN CONTACTS

#2
20200303225
2020-09-24

METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

#3
20190267475
2019-08-29

SILICON GERMANIUM-ON-INSULATOR FORMATION BY THERMAL MIXING

#4
20190195793
2019-06-27

Spectrometer utilizing surface plasmon

#5
20190157438
2019-05-23

Semiconductor device having a source region with chalcogen atoms

#6
20190120617
2019-04-25

Shallow angle, multi-wavelength, multi-receiver, adjustable sensitivity aligner sensor for semiconductor manufacturing equipment

#7
20180145188
2018-05-24

STACKED SEMICONDUCTOR STRUCTURE

#8
20180108567
2018-04-19

SEMICONDUCTOR DEVICE AND A METHOD FOR FORMING A SEMICONDUCTOR DEVICE

#9
20180053654
2018-02-22

Signal relay board for power semiconductor modules

#10
20180033872
2018-02-01

Method of epitaxial growth shape control for CMOS applications

#11
20170250112
2017-08-31

Semiconductor device and a method for forming a semiconductor device

#12
20170236920
2017-08-17

Method for producing a pillar-shaped semiconductor device

#13
20170133538
2017-05-11

Method of producing differently doped zones in a silicon substrate, in particular for a solar cell

#14
20160359023
2016-12-08

Silicon germanium-on-insulator formation by thermal mixing

#15
20160351397
2016-12-01

Silicon germanium-on-insulator formation by thermal mixing

#16
20160314990
2016-10-27

Ni:NiGe:Ge selective etch formulations and method of using same

#17
20160240642
2016-08-18

Method for forming a semiconductor device with implanted chalcogen atoms

#18
20160204033
2016-07-14

Method for separating substrates and semiconductor chip

#19
20160163648
2016-06-09

Method for forming an electrical contact

#20
20160155842
2016-06-02

Pillar-shaped semiconductor device and method for producing the same

#21
20150325666
2015-11-12

SiC semiconductor device and method for manufacturing the same

#22
20150255588
2015-09-10

Hot-electron transistor having multiple MSM sequences

#23
20150054092
2015-02-26

LOCAL INTERCONNECTS BY METAL-III-V ALLOY WIRING IN SEMI-INSULATING III-V SUBSTRATES

#24
20140094002
2014-04-03

Active layer ion implantation method and active layer ion implantation method for thin-film transistor

#25
20130217198
2013-08-22

Localized implant into active region for enhanced stress

#26
20120100685
2012-04-26

Localized implant into active region for enhanced stress

#27
20090250725
2009-10-08

Ohmic metal contact protection using an encapsulation layer

#28
20050048747
2005-03-03

Ohmic metal contact and channel protection in GaN devices using an encapsulation layer

#29
16252932
2020-04-28

Localized tunneling enhancement for semiconductor devices