ClassID:

207474

H01L21/76262 - CPC Classification

Classification description:

Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof; Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof; Manufacture of specific parts of devices defined in group; Making of isolation regions between components; Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using selective deposition of single crystal silicon, i.e. SEG techniques

Recent Application in this class:
#1
20260059858
2026-02-26

SEED STRUCTURES IN SEMICONDUCTOR DEVICES AND FABRICATION THEREOF

#2
20260026275
2026-01-22

FACET SUPPRESSION FOR EPITAXIAL GROWTH

#3
20240003933
2024-01-04

INERTIAL SENSOR, METHOD OF MANUFACTURING INERTIAL SENSOR, AND INERTIAL MEASUREMENT UNIT

#4
20230207307
2023-06-29

COMPOSITE SUBSTRATE AND PRODUCTION METHOD THEREFOR

#5
20220328309
2022-10-13

Selective capping processes and structures formed thereby

#6
20210043454
2021-02-11

Semiconductor devices

#7
20200402795
2020-12-24

Selective capping processes and structures formed thereby

#8
20200227263
2020-07-16

Device substrate with high thermal conductivity and method of manufacturing the same

#9
20200176304
2020-06-04

Oxidized cavity structures within and under semiconductor devices

#10
20200135463
2020-04-30

Methods of forming semiconductor devices

#11
20190172827
2019-06-06

Epitaxial oxide fin segments to prevent strained semiconductor fin end relaxation

#12
20190164752
2019-05-30

Selective capping processes and structures formed thereby

#13
20190164751
2019-05-30

Selective capping processes and structures formed thereby

#14
20190109003
2019-04-11

Semiconductor nanowire fabrication

#15
20180005872
2018-01-04

PREPARATION OF SILICON-GERMANIUM-ON-INSULATOR STRUCTURES

#16
20170154903
2017-06-01

Method of fabricating crystalline island on substrate

#17
20160351391
2016-12-01

Semiconductor nanowire fabrication

#18
20150311070
2015-10-29

Method for forming a multiple layer epitaxial layer on a wafer

#19
20150294901
2015-10-15

Localized region of isolated silicon over recessed dielectric layer

#20
20140312424
2014-10-23

Method of producing a silicon-on-insulator article

#21
20140231964
2014-08-21

Multiple layer substrate

#22
20140167230
2014-06-19

Composite substrate and method for manufacturing same

#23
20140141593
2014-05-22

Semiconductor device and method for forming the same

#24
20130264678
2013-10-10

Method for making a semi-conducting substrate located on an insulation layer

#25
20120273918
2012-11-01

SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME

#26
20120244687
2012-09-27

Method of manufacturing a base substrate for a semi-conductor on insulator type substrate

#27
20100289123
2010-11-18

Method for making a semi-conducting substrate located on an insulation layer

#28
20100221867
2010-09-02

LOW COST SOI SUBSTRATES FOR MONOLITHIC SOLAR CELLS

#29
20090227086
2009-09-10

Threshold voltage consistency and effective width in same-substrate device groups

#30
20090098735
2009-04-16

METHOD OF FORMING ISOLATION LAYER IN SEMICONDCUTOR DEVICE

#31
20090004815
2009-01-01

Method for manufacturing semiconductor device

#32
20080224252
2008-09-18

Semiconductor device having an element isolating insulating film

#33
20060286298
2006-12-21

Thin layer structure and method of forming the same

#34
20060234479
2006-10-19

Implantation-less approach to fabricating strained semiconductor on isolation wafers

#35
20050205936
2005-09-22

Semiconductor device incorporating a defect controlled strained channel structure and method of making the same

#36
20050136626
2005-06-23

Microelectronic structure with a high germanium concentration silicon germanium alloy including a graded buffer layer

#37
20050136566
2005-06-23

Optical system with a high germanium concentration silicon germanium alloy including a graded buffer layer

#38
20050073028
2005-04-07

Semiconductor device incorporating a defect controlled strained channel structure and method of making the same

#39
20050009306
2005-01-13

Semiconductor device and method of manufacturing the same