ClassID:

207547

H01L21/84 - page 4 - CPC Classification

Classification description:

Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof; Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof; Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body

Recent Application in this class:
#901
20180069634
2018-03-08

Method and system for a photonic interposer

#902
20180069091
2018-03-08

Method for late differential SOI thinning for improved FDSOI performance and HCI optimization

#903
20180069079
2018-03-08

SEMICONDUCTOR DEVICES INCLUDING TRAP RICH LAYER REGIONS

#904
20180069052
2018-03-08

3D IC semiconductor device and structure with stacked memory

#905
20180069024
2018-03-08

Extremely thin silicon-on-insulator silicon germanium device without edge strain relaxation

#906
20180069014
2018-03-08

SEMICONDUCTOR DEVICE

#907
20180069013
2018-03-08

Method of making thin SRAM cell having vertical transistors

#908
20180068941
2018-03-08

Copper interconnect for improving radio frequency (RF) silicon-on-insulator (SOI) switch field effect transistor (FET) stacks

#909
20180068898
2018-03-08

Semi-sequential 3D integration

#910
20180068886
2018-03-08

POROUS SEMICONDUCTOR LAYER TRANSFER FOR AN INTEGRATED CIRCUIT STRUCTURE

#911
20180062576
2018-03-01

Double balanced mixer

#912
20180061839
2018-03-01

Semiconductor device structure with self-aligned capacitor device

#913
20180061833
2018-03-01

Substrate contact land for an MOS transistor in an SOI substrate, in particular an FDSOI substrate

#914
20180061766
2018-03-01

Semiconductor devices on two sides of an isolation layer

#915
20180061698
2018-03-01

Semiconductor structure and related method

#916
20180061318
2018-03-01

Display driving circuit, array substrate, circuit driving method, and display device

#917
20180059456
2018-03-01

Pixel structure and manufacturing method thereof, array substrate and display apparatus

#918
20180053832
2018-02-22

NVM device in SOI technology and method of fabricating an according device

#919
20180053785
2018-02-22

System on chip fully-depleted silicon on insulator with RF and MM-wave integrated functions

#920
20180053784
2018-02-22

System on chip fully-depleted silicon on insulator with rf and mm-wave integrated functions

#921
20180048296
2018-02-15

RADIO-FREQUENCY SWITCH WITHOUT NEGATIVE VOLTAGES

#922
20180047750
2018-02-15

Lateral bipolar junction transistor with multiple base lengths

#923
20180047680
2018-02-15

Semiconductor device

#924
20180047642
2018-02-15

Air gap spacer implant for NZG reliability fix

#925
20180047635
2018-02-15

Semiconductor device and manufacturing method thereof

#926
20180047557
2018-02-15

Polycrystalline ceramic substrate and method of manufacture

#927
20180040597
2018-02-08

Packaging optoelectronic components and CMOS circuitry using silicon-on-insulator substrates for photonics applications

#928
20180035934
2018-02-08

Systems and methods for in vivo detection of electrophysiological and electrochemical signals

#929
20180034369
2018-02-01

On-chip DC-DC power converters with fully integrated GaN power switches, silicon CMOS transistors and magnetic inductors

#930
20180033786
2018-02-01

Laterally diffused metal oxide semiconductor device integrated with vertical field effect transistor

#931
20180019315
2018-01-18

Manufacturing method of semiconductor device and semiconductor device

#932
20180019305
2018-01-18

Stacked nanowire device width adjustment by gas cluster ion beam (GCIB)

#933
20180019259
2018-01-18

Semiconductor device and monolithic semiconductor device including a power semiconductor device and a control circuit

#934
20180013389
2018-01-11

Circuits and methods including dual gate field effect transistors

#935
20180012973
2018-01-11

Differential SG/EG spacer integration with equivalent NFET/PFET spacer widths and dial raised source drain expitaxial silicon and triple-nitride spacer integration enabling high-voltage EG device on FDSOI

#936
20180012897
2018-01-11

Anti-fuse with reduced programming voltage

#937
20180012850
2018-01-11

Trap layer substrate stacking technique to improve performance for RF devices

#938
20170373074
2017-12-28

Method of making a fully depleted semiconductor-on-insulator programmable cell and structure thereof

#939
20170373068
2017-12-28

Semiconductor memory device including multilayer wiring layer

#940
20170372984
2017-12-28

Systems and methods for thermal conduction using S-contacts

#941
20170372945
2017-12-28

Reduced substrate effects in monolithically integrated RF circuits

#942
20170365340
2017-12-21

Semiconductor memory having both volatile and non-volatile functionality and method of operating

#943
20170358781
2017-12-14

Display device and method of manufacturing the same

#944
20170358692
2017-12-14

Integrated circuits with capacitors and methods for producing the same

#945
20170358668
2017-12-14

Method for manufacturing semiconductor device

#946
20170358644
2017-12-14

Method of forming a semiconductor device having a dopant in the substrate adjacent the insulator

#947
20170358609
2017-12-14

Semiconductor device

#948
20170358608
2017-12-14

Creation of wide band gap material for integration to SOI thereof

#949
20170358607
2017-12-14

Methods for forming hybrid vertical transistors

#950
20170358574
2017-12-14

Integrated circuits with capacitors and methods for producing the same

#951
20170358502
2017-12-14

Method for producing on the same transistors substrate having different characteristics

#952
20170352687
2017-12-07

Method of manufacturing semiconductor device

#953
20170352598
2017-12-07

Double sided NMOS/PMOS structure and methods of forming the same

#954
20170345935
2017-11-30

Method to form strained channel in thin box SOI structures by elastic strain relaxation of the substrate

#955
20170345914
2017-11-30

Methods for forming integrated circuits that include a dummy gate structure

#956
20170345829
2017-11-30

High density programmable e-fuse co-integrated with vertical FETs

#957
20170345750
2017-11-30

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

#958
20170345724
2017-11-30

Method for the formation of transistors PDSO1 and FDSO1 on a same substrate

#959
20170338343
2017-11-23

HIGH-VOLTAGE TRANSISTOR DEVICE

#960
20170338255
2017-11-23

Passive components implemented on a plurality of stacked insulators

#961
20170338230
2017-11-23

S-contact for SOI

#962
20170338157
2017-11-23

Method for producing on the same transistors substrate having different characteristics

#963
20170338145
2017-11-23

Semiconductor structure with integrated passive structures

#964
20170336467
2017-11-23

GATE PROTECTION FOR HV-STRESS APPLICATION

#965
20170336349
2017-11-23

Nanofluid sensor with real-time spatial sensing

#966
20170330953
2017-11-16

Differential SG/EG spacer integration with equivalent NFET/PFET spacer widths and dual raised source drain expitaxial silicon and triple-nitride spacer integration enabling high-voltage EG device on FDSOI

#967
20170330899
2017-11-16

Semiconductor on insulator (SOI) block with a guard ring

#968
20170330896
2017-11-16

Integrated circuits with deep and ultra shallow trench isolations and methods for fabricating the same

#969
20170330807
2017-11-16

Prevention of charging damage in full-depletion devices

#970
20170330804
2017-11-16

Prevention of charging damage in full-depletion devices

#971
20170330790
2017-11-16

Air gap over transistor gate and related method

#972
20170324385
2017-11-09

Method, apparatus and system for back gate biasing for FD-SOI devices

#973
20170323973
2017-11-09

SOI WAFERS AND DEVICES WITH BURIED STRESSOR

#974
20170323946
2017-11-09

Group III-N transistor on nanoscale template structures

#975
20170323939
2017-11-09

Semiconductor film with adhesion layer and method for forming the same

#976
20170322177
2017-11-09

CMOS compatible BioFET

#977
20170317171
2017-11-02

Leakage-free implantation-free ETSOI transistors

#978
20170317108
2017-11-02

FDSOI-capacitor

#979
20170317103
2017-11-02

Integrated circuits with selectively strained device regions and methods for fabricating same

#980
20170316986
2017-11-02

Commonly-bodied field-effect transistors

#981
20170315295
2017-11-02

Method and structure providing optical isolation of a waveguide on a silicon-on-insulator substrate

#982
20170309728
2017-10-26

METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

#983
20170309643
2017-10-26

Tunable capacitor for FDSOI applications

#984
20170309642
2017-10-26

Systems and Methods for a Semiconductor Structure Having Multiple Semiconductor-Device Layers

#985
20170309629
2017-10-26

Semiconductor device and fabricating the same

#986
20170309581
2017-10-26

Switchable die seal connection

#987
20170309527
2017-10-26

Flipped vertical field-effect-transistor

#988
20170309483
2017-10-26

Manufacturing of silicon strained in tension on insulator by amorphisation then recrystallisation

#989
20170308782
2017-10-26

Stretchable broad impedance bandwidth RFID devices

#990
20170301884
2017-10-19

Frameless display device with concealed drive circuit board and manufacturing method thereof

#991
20170301694
2017-10-19

Semiconductor device with silicon layer containing carbon

#992
20170294513
2017-10-12

Method of manufacturing a MOSFET on an SOI substrate

#993
20170294463
2017-10-12

Peeling method and manufacturing method of flexible device

#994
20170294379
2017-10-12

Method for forming an electrical contact between a semiconductor film and a bulk handle wafer, and resulting structure

#995
20170294307
2017-10-12

Fabrication of semiconductor structures

#996
20170288608
2017-10-05

Double balanced mixer

#997
20170288059
2017-10-05

Enhanced substrate contact for MOS transistor in an SOI substrate, in particular an FDSOI substrate

#998
20170288055
2017-10-05

Aluminum nitride based Silicon-on-Insulator substrate structure

#999
20170287935
2017-10-05

VARIABLE BURIED OXIDE THICKNESS FOR SILICON-ON-INSULATOR DEVICES

#1000
20170287934
2017-10-05

Semiconductor device and manufacturing method thereof

#1001
20170287911
2017-10-05

Multi-finger devices in mutliple-gate-contacted-pitch, integrated structures

#1002
20170287901
2017-10-05

Semiconductor structure including a transistor including a gate electrode region provided in a substrate and method for the formation thereof

#1003
20170287855
2017-10-05

VARIABLE HANDLE WAFER RESISTIVITY FOR SILICON-ON-INSULATOR DEVICES

#1004
20170287795
2017-10-05

Semiconductor device and manufacturing method thereof

#1005
20170271525
2017-09-21

Method for reduced parasitic capacitance and contact resistance in extremely thin silicon-on-insulator (ETSOI) devices due to wrap-around structure of source/drain regions

#1006
20170271325
2017-09-21

Method of forming MOS and bipolar transistors

#1007
20170271220
2017-09-21

Inline monitoring of transistor-to-transistor critical dimension

#1008
20170263777
2017-09-14

Semiconductor device

#1009
20170263704
2017-09-14

Methods for varied strain on nano-scale field effect transistor devices

#1010
20170263575
2017-09-14

FDSOI with on-chip physically unclonable function

#1011
20170263328
2017-09-14

Semiconductor device and manufacturing method thereof

#1012
20170257063
2017-09-07

Voltage-controlled oscillator

#1013
20170256616
2017-09-07

SOI substrate and manufacturing method thereof

#1014
20170256565
2017-09-07

Field-effect transistors with a non-relaxed strained channel

#1015
20170256440
2017-09-07

SOI SUBSTRATE AND MANUFACTURING METHOD THEREOF

#1016
20170256301
2017-09-07

Memory device and semiconductor device

#1017
20170250202
2017-08-31

Array substrate for display device and manufacturing method thereof

#1018
20170250200
2017-08-31

Transistor layout with low aspect ratio

#1019
20170250198
2017-08-31

METHOD FOR MANUFACTURING A TRANSISTOR HAVING A SHARP JUNCTION BY FORMING RAISED SOURCE-DRAIN REGIONS BEFORE FORMING GATE REGIONS AND CORRESPONDING TRANSISTOR PRODUCED BY SAID METHOD

#1020
20170250176
2017-08-31

Silicon controlled rectifier (SCR) based ESD protection device

#1021
20170250104
2017-08-31

Via self alignment and shorting improvement with airgap integration capacitance benefit

#1022
20170243920
2017-08-24

Semiconductor device and method of manufacturing same

#1023
20170243887
2017-08-24

Vertical semiconductor device with thinned substrate

#1024
20170243782
2017-08-24

Methods of forming field effect transistor (FET) and non-FET circuit elements on a semiconductor-on-insulator substrate

#1025
20170236817
2017-08-17

ESD protection device with buried layer having variable doping concentrations

#1026
20170236721
2017-08-17

Rapid heating process in the production of semiconductor components

#1027
20170229538
2017-08-10

Stacked nanowire devices

#1028
20170229480
2017-08-10

Semiconductor device including a high-electron-mobility transistor (HEMT) and method for manufacturing the same

#1029
20170229458
2017-08-10

Third type of metal gate stack for CMOS devices

#1030
20170229394
2017-08-10

Method and structure for forming on-chip anti-fuse with reduced breakdown voltage

#1031
20170229367
2017-08-10

Semiconductor structure and fabrication method thereof

#1032
20170229353
2017-08-10

Hybrid ETSOI structure to minimize noise coupling from TSV

#1033
20170229352
2017-08-10

Fabricating a dual gate stack of a CMOS structure

#1034
20170229347
2017-08-10

Method for forming a semiconductor structure containing high mobility semiconductor channel materials

#1035
20170222056
2017-08-03

Semiconductor device, semiconductor wafer, module, electronic device, and manufacturing method thereof

#1036
20170222013
2017-08-03

Manufacturing method of semiconductor device and semiconductor device

#1037
20170221774
2017-08-03

Method for forming a semiconductor structure containing high mobility semiconductor channel materials

#1038
20170221761
2017-08-03

3D semiconductor device and system

#1039
20170213910
2017-07-27

Method of localized modification of the stresses in a substrate of the SOI type, in particular FD SOI type, and corresponding device

#1040
20170207242
2017-07-20

Semiconductor device and manufacturing method thereof

#1041
20170207113
2017-07-20

Method for manufacturing semiconductor structure

#1042
20170206300
2017-07-20

Incremental multi-patterning validation

#1043
20170201291
2017-07-13

Monolithic integration of antenna switch and diplexer

#1044
20170201250
2017-07-13

Switching system and method

#1045
20170200743
2017-07-13

Semiconductor structure including a first transistor and a second transistor

#1046
20170200738
2017-07-13

Semiconductor device and fabricating method thereof

#1047
20170200634
2017-07-13

Method of manufacturing SOI wafer

#1048
20170194351
2017-07-06

Semiconductor-metal-on-insulator structures, methods of forming such structures, and semiconductor devices including such structures

#1049
20170194206
2017-07-06

Stress memorization technique for strain coupling enhancement in bulk finFET device

#1050
20170194145
2017-07-06

Controlled confined lateral III-V epitaxy

#1051
20170186775
2017-06-29

FinFET with stacked faceted S/D epitaxy for improved contact resistance

#1052
20170186770
2017-06-29

3D semiconductor memory device and structure

#1053
20170186739
2017-06-29

Packaging optoelectronic components and CMOS circuitry using silicon-on-insulator substrates for photonics applications

#1054
20170186670
2017-06-29

Packaging optoelectronic components and CMOS circuitry using silicon-on-insulator substrates for photonics applications

#1055
20170186649
2017-06-29

Method of manufacturing semiconductor device reducing variation in thickness of silicon layer among semiconductor wafers

#1056
20170179304
2017-06-22

Leakage-free implantation-free ETSOI transistors

#1057
20170179289
2017-06-22

Method to form strained nFET and strained pFET nanowires on a same substrate

#1058
20170179257
2017-06-22

Junction butting structure using nonuniform trench shape

#1059
20170179226
2017-06-22

ULTRASOUND T/R ISOLTATION DISOLATOR WITH FAST RECOVERY TIME ON SOI

#1060
20170179156
2017-06-22

Structure and method for fully depleted silicon on insulator structure for threshold voltage modification

#1061
20170179137
2017-06-22

Silicon-on-nothing transistor semiconductor structure with channel epitaxial silicon region

#1062
20170170195
2017-06-15

Extremely thin silicon-on-insulator silicon germanium device without edge strain relaxation

#1063
20170170178
2017-06-15

Channel silicon germanium formation method

#1064
20170170177
2017-06-15

S-contact for SOI

#1065
20170162557
2017-06-08

TRENCH BASED CHARGE PUMP DEVICE

#1066
20170162452
2017-06-08

Semiconductor nanowire device and fabrication method thereof

#1067
20170148981
2017-05-25

Semiconductor Devices Having Insulating Substrates and Methods of Formation Thereof

#1068
20170148820
2017-05-25

Array substrate and method of manufacturing the same, and display apparatus

#1069
20170141142
2017-05-18

Optoelectronics and CMOS integration on GOI substrate

#1070
20170141130
2017-05-18

Semiconductor device and method for manufacturing the same

#1071
20170133401
2017-05-11

Semiconductor integrated circuit

#1072
20170133390
2017-05-11

Method for producing one-time-programmable memory cells and corresponding integrated circuit

#1073
20170133277
2017-05-11

CMOS nanowire structure

#1074
20170125287
2017-05-04

Substrate having two semiconductor materials on insulator

#1075
20170117366
2017-04-27

Electronic devices and systems, and methods for making and using the same

#1076
20170117299
2017-04-27

Semiconductor device, manufacturing method thereof, and electronic device

#1077
20170117296
2017-04-27

Method of manufacturing a device with MOS transistors

#1078
20170117275
2017-04-27

Semiconductor device and fabrication method thereof

#1079
20170117187
2017-04-27

System on chip material co-integration

#1080
20170117176
2017-04-27

Methods of forming strained-semiconductor-on-insulator device structures

#1081
20170110491
2017-04-20

Semiconductor on insulator substrate with back bias

#1082
20170110450
2017-04-20

Complementary SOI lateral bipolar transistors with backplate bias

#1083
20170110420
2017-04-20

Trap layer substrate stacking technique to improve performance for RF devices

#1084
20170104540
2017-04-13

Radio-frequency isolation using front side opening

#1085
20170104011
2017-04-13

Co-fabricated bulk devices and semiconductor-on-insulator devices

#1086
20170104005
2017-04-13

Contacting SOI subsrates

#1087
20170103989
2017-04-13

Method of making embedded memory device with silicon-on-insulator substrate

#1088
20170098663
2017-04-06

Integrated circuits (ICs) on a glass substrate

#1089
20170098661
2017-04-06

Semiconductor device including a repeater/buffer at higher metal routing layers and methods of manufacturing the same

#1090
20170084756
2017-03-23

Stacked nanowire device width adjustment by gas cluster ion beam (GCIB)

#1091
20170084726
2017-03-23

Highly scaled tunnel FET with tight pitch and method to fabricate same

#1092
20170084690
2017-03-23

Stacked nanowire device width adjustment by gas cluster ion beam (GCIB)

#1093
20170084629
2017-03-23

Semiconductor device with reduced poly spacing effect

#1094
20170084531
2017-03-23

Integrated circuits (ICS) on a glass substrate

#1095
20170084497
2017-03-23

Dual-semiconductor complementary metal-oxide-semiconductor device

#1096
20170084492
2017-03-23

Highly scaled tunnel FET with tight pitch and method to fabricate same

#1097
20170077141
2017-03-16

Composite substrate

#1098
20170077092
2017-03-16

Integrated circuit composed of tunnel field-effect transistors and method for manufacturing same

#1099
20170076997
2017-03-16

Method of fabricating a transistor channel structure with uniaxial strain

#1100
20170076954
2017-03-16

Removal of semiconductor growth defects

#1101
20170076944
2017-03-16

Method for causing tensile strain in a semiconductor film

#1102
20170069661
2017-03-09

Method for manufacturing a transistor having a sharp junction by forming raised source-drain regions before forming gate regions and corresponding transistor produced by said method

#1103
20170069550
2017-03-09

Method of forming a semiconductor device with STI structures on an SOI substrate

#1104
20170062476
2017-03-02

Techniques for dual dielectric thickness for a nanowire CMOS technology using oxygen growth

#1105
20170062333
2017-03-02

Raised e-fuse

#1106
20170062284
2017-03-02

Silicon on porous silicon

#1107
20170062267
2017-03-02

SOI wafer manufacturing process and SOI wafer

#1108
20170054034
2017-02-23

Transisitor comprising oxide semiconductor

#1109
20170053907
2017-02-23

Double-side process silicon MOS and passive devices for RF front-end modules

#1110
20170047346
2017-02-16

Semiconductor Device With Self-Aligned Back Side Features

#1111
20170047312
2017-02-16

Packaging optoelectronic components and CMOS circuitry using silicon-on-insulator substrates for photonics applications

#1112
20170047285
2017-02-16

Method and structure for forming on-chip anti-fuse with reduced breakdown voltage

#1113
20170040465
2017-02-09

Method of forming semiconductor device

#1114
20170040354
2017-02-09

Capacitor structure and method of forming a capacitor structure

#1115
20170040323
2017-02-09

Semiconductor device and method of fabricating the same

#1116
20170040226
2017-02-09

Semiconductor device and manufacturing method of the same

#1117
20170040219
2017-02-09

III-V, SiGe, or Ge base lateral bipolar transistor and CMOS hybrid technology

#1118
20170033128
2017-02-02

Memory device, semiconductor device, and electronic device

#1119
20170031844
2017-02-02

Hybrid computing module

#1120
20170031843
2017-02-02

Hybrid computing module

#1121
20170031413
2017-02-02

Hybrid computing module

#1122
20170025534
2017-01-26

Semiconductor memory having both volatile and non-volatile functionality

#1123
20170025442
2017-01-26

Method including a formation of a transistor and semiconductor structure including a first transistor and a second transistor

#1124
20170025418
2017-01-26

Semiconductor structures with deep trench capacitor and methods of manufacture

#1125
20170023521
2017-01-26

CMOS compatible BioFET

#1126
20170018611
2017-01-19

Method of manufacturing a semiconductor device to prevent occurrence of short-channel characteristics and parasitic capacitance

#1127
20170018576
2017-01-19

Liquid crystal display device and electronic device

#1128
20170018573
2017-01-19

SOI-based semiconductor device with dynamic threshold voltage

#1129
20170018462
2017-01-19

Semiconductor device and fabricating method thereof

#1130
20170012043
2017-01-12

Substrate contact land for an MOS transistor in an SOI substrate, in particular an FDSOI substrate

#1131
20170011966
2017-01-12

Interconnect structures and fabrication method thereof

#1132
20170005111
2017-01-05

Creation of wide band gap material for integration to SOI thereof

#1133
20170004873
2017-01-05

Structure and method for adjusting threshold voltage of the array of transistors

#1134
20160380100
2016-12-29

FDSOI voltage reference

#1135
20160379994
2016-12-29

Systems and methods for a semiconductor structure having multiple semiconductor-device layers

#1136
20160379993
2016-12-29

Tunable capacitor for FDSOI applications

#1137
20160379956
2016-12-29

Semiconductor device having recessed edges and method of manufacture

#1138
20160379943
2016-12-29

METHOD AND APPARATUS FOR HIGH PERFORMANCE PASSIVE-ACTIVE CIRCUIT INTEGRATION

#1139
20160379866
2016-12-29

Isolated semiconductor layer over buried isolation layer

#1140
20160372602
2016-12-22

Dual channel memory

#1141
20160372562
2016-12-22

Process for producing a contact on an active zone of an integrated circuit, for example produced on an SOI substrate, in particular an FDSOI substrate, and corresponding integrated circuit

#1142
20160372486
2016-12-22

Semiconductor device and method for controlling semiconductor device

#1143
20160372485
2016-12-22

Fully-depleted silicon-on-insulator transistors

#1144
20160372484
2016-12-22

Method for manufacturing a high-resistivity semiconductor-on-insulator substrate including an RF circuit overlapping a doped region in the substrate

#1145
20160372429
2016-12-22

Semiconductor device and radio frequency module formed on high resistivity substrate

#1146
20160372424
2016-12-22

LOW-WARPAGE SEMICONDUCTOR SUBSTRATE AND METHOD FOR PREPARING SAME

#1147
20160365850
2016-12-15

High power RF switches using multiple optimized transistors

#1148
20160365342
2016-12-15

Manufacturing of self aligned interconnection elements for 3D integrated circuits

#1149
20160365291
2016-12-15

Vertically integrated memory cell

#1150
20160359011
2016-12-08

Techniques for multiple gate workfunctions for a nanowire CMOS technology

#1151
20160359002
2016-12-08

Semiconductor-on-insulator with back side heat dissipation

#1152
20160358923
2016-12-08

Memory device and method for manufacturing the same

#1153
20160358918
2016-12-08

Electronic devices and systems, and methods for making and using the same

#1154
20160353038
2016-12-01

Bottom-gate thin-body transistors for stacked wafer integrated circuits

#1155
20160351713
2016-12-01

P-channel transistor having an increased channel mobility due to a compressive stress-inducing gate electrode

#1156
20160351708
2016-12-01

Semiconductor device

#1157
20160351689
2016-12-01

Semiconductor structure with an L-shaped bottom

#1158
20160351660
2016-12-01

Method for local isolation between transistors produced on an SOI substrate, in particular an FDSOI substrate, and corresponding integrated circuit

#1159
20160343814
2016-11-24

Transistor with a low-k sidewall spacer and method of making same

#1160
20160343807
2016-11-24

Embedded carbon-doped germanium as stressor for germanium nFET devices

#1161
20160343774
2016-11-24

Semiconductor device and structure

#1162
20160343748
2016-11-24

Array substrate, method for manufacturing the same, and display apparatus

#1163
20160343659
2016-11-24

E-fuse in SOI configuration

#1164
20160342057
2016-11-24

Display device including auxiliary lines and polarizing films, and manufacturing method thereof

#1165
20160336991
2016-11-17

Radio frequency isolation using substrate opening

#1166
20160336990
2016-11-17

Radio frequency isolation cavity formation using sacrificial material

#1167
20160336345
2016-11-17

Channel SiGe devices with multiple threshold voltages on hybrid oriented substrates, and methods of manufacturing same

#1168
20160336344
2016-11-17

SILICON-ON-INSULATOR DEVICES HAVING CONTACT LAYER

#1169
20160336278
2016-11-17

Cavity formation in semiconductor devices

#1170
20160336228
2016-11-17

Backside cavity formation in semiconductor devices

#1171
20160336214
2016-11-17

Cavity formation in interface layer in semiconductor devices

#1172
20160322385
2016-11-03

SUBSTRATE BIAS FOR FIELD-EFFECT TRANSISTOR DEVICES

#1173
20160322384
2016-11-03

Semiconductor structure having logic region and analog region

#1174
20160315056
2016-10-27

Preventing unauthorized use of integrated circuits for radiation-hard applications

#1175
20160315016
2016-10-27

Method of manufacturing P-channel FET device with SiGe channel

#1176
20160308057
2016-10-20

Strained semiconductor using elastic edge relaxation of a stressor combined with buried insulating layer

#1177
20160308041
2016-10-20

Wide band gap transistors on non-native semiconductor substrates and methods of manufacture thereof

#1178
20160307926
2016-10-20

Integrated circuit product with bulk and SOI semiconductor devices

#1179
20160307918
2016-10-20

Semiconductor structure with integrated passive structures

#1180
20160307892
2016-10-20

Semiconductor structure with an L-shaped bottom plate

#1181
20160307809
2016-10-20

Process for fabricating SOI transistors for an increased integration density

#1182
20160307806
2016-10-20

Semiconductor structure with integrated passive structures

#1183
20160300956
2016-10-13

Semiconductor structure with an L-shaped bottom plate

#1184
20160300838
2016-10-13

Devices having multiple threshold voltages and method of fabricating such devices

#1185
20160293765
2016-10-06

Semiconductor device structures and methods of forming semiconductor structures

#1186
20160293664
2016-10-06

Semiconductor device structure useful for bulk transistor and method of manufacturing same where a substrate extends commonly over a transistor, an element region, and a separation region

#1187
20160293494
2016-10-06

Method for making strained semiconductor device and related methods

#1188
20160293477
2016-10-06

SILICON-ON-INSULATOR (SOI) WAFERS EMPLOYING MOLDED SUBSTRATES TO IMPROVE INSULATION AND REDUCE CURRENT LEAKAGE

#1189
20160284990
2016-09-29

Semiconductor devices having insulating substrates and methods of formation thereof

#1190
20160284810
2016-09-29

Techniques for multiple gate workfunctions for a nanowire CMOS technology

#1191
20160284807
2016-09-29

METHOD OF FORMATION OF A SUBSTRATE OF THE SOI, IN PARTICULAR THE FDSOI, TYPE ADAPTED TO TRANSISTORS HAVING GATE DIELECTRICS OF DIFFERENT THICKNESSES, CORRESPONDING SUBSTRATE AND INTEGRATED CIRCUIT

#1192
20160284731
2016-09-29

Efficient buried oxide layer interconnect scheme

#1193
20160284604
2016-09-29

Techniques for dual dielectric thickness for a nanowire CMOS technology using oxygen growth

#1194
20160277115
2016-09-22

Method and system for photonic interposer

#1195
20160276330
2016-09-22

Optoelectronics and CMOS integration on GOI substrate

#1196
20160276210
2016-09-22

Integrated circuits using silicon on insulator substrates and methods of manufacturing the same

#1197
20160268433
2016-09-15

Method of making a CMOS semiconductor device using a stressed silicon-on-insulator (SOI) wafer

#1198
20160268424
2016-09-15

Semiconductor structure including backgate regions and method for the formation thereof

#1199
20160268311
2016-09-15

Semiconductor device and method for fabricating the same

#1200
20160268310
2016-09-15

Structure for integration of an III-V compound semiconductor on SOI