ClassID:

211575

H01L2224/8502 - CPC Classification

Classification description:

Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by; Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector; Pre-treatment of the connector or the bonding area Applying permanent coating, e.g. in-situ coating

Recent Application in this class:
#1
20240332105
2024-10-03

MULTIDEVICE PACKAGE WITH RECESSED MOUNTING SURFACE

#2
20180342442
2018-11-29

Semiconductor device and method for manufacturing the same

#3
20180138143
2018-05-17

Wire bonding methods and systems incorporating metal nanoparticles

#4
20180082977
2018-03-22

Method of manufacturing semiconductor device

#5
20170271174
2017-09-21

Printed adhesion deposition to mitigate integrated circuit delamination

#6
20170194170
2017-07-06

Printed adhesion deposition to mitigate integrated circuit package delamination

#7
20170062318
2017-03-02

Sintered conductive matrix material on wire bond

#8
20170053895
2017-02-23

Wire bonding methods and systems incorporating metal nanoparticles

#9
20150357304
2015-12-10

Flip chip assembly and process with sintering material on metal bumps

#10
20150255420
2015-09-10

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

#11
20120313239
2012-12-13

Flip chip assembly and process with sintering material on metal bumps

#12
20110253429
2011-10-20

Apparatus with a multi-layer coating and method of forming the same

#13
20100072610
2010-03-25

Process for precision placement of integrated circuit overcoat material

#14
20080036046
2008-02-14

Process for precision placement of integrated circuit overcoat material

#15
20080035362
2008-02-14

Method and structure for controlled impedance wire bonds using co-dispensing of dielectric spacers

#16
20050116013
2005-06-02

Method and structure for controlled impedance wire bonds using co-dispensing of dielectric spacers