ClassID:

207935

H01L27/0611 - CPC Classification

Classification description:

Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region

Sub-classes:
Recent Application in this class:
#1
20230207491
2023-06-29

RECTILINEAR SEAMS BETWEEN ADJACENT FIELDS OF A DIE FOR IMPROVED LAYOUT EFFICIENCY

#2
20220285235
2022-09-08

Semiconductor testkey pattern and test method thereof

#3
20210351283
2021-11-11

IC structure with single active region having different doping profile than set of active regions

#4
20210257443
2021-08-19

Semiconductor device

#5
20210103094
2021-04-08

Photonic integrated circuit devices and methods of forming same

#6
20210066151
2021-03-04

Package structure and method of fabricating the same

#7
20190252331
2019-08-15

HIGH-VOLTAGE CAPACITOR STRUCTURE AND DIGITAL ISOLATION APPARATUS

#8
20180294259
2018-10-11

Semiconductor device having a sense diode portion

#9
20170358668
2017-12-14

Method for manufacturing semiconductor device

#10
20170077094
2017-03-16

Semiconductor integrated circuit

#11
20160190230
2016-06-30

Capacitor and method for producing the same

#12
20160071798
2016-03-10

Semiconductor device comprising power elements in juxtaposition order

#13
20150353344
2015-12-10

Cavity structures for MEMS devices

#14
20150333046
2015-11-19

Integrated device

#15
20150311197
2015-10-29

Semiconductor device, switching power supply control IC, and switching power supply device

#16
20150221645
2015-08-06

Semiconductor integrated circuit

#17
20150200244
2015-07-16

Moisture barrier capacitors in semiconductor components

#18
20150145105
2015-05-28

High-resistive silicon substrate with a reduced radio frequency loss for a radio-frequency integrated passive device

#19
20150123241
2015-05-07

Semiconductor device with an integrated heat sink array

#20
20150014624
2015-01-15

Nanodevice and method for fabricating the same

#21
20140346635
2014-11-27

Semiconductor module and driving device for switching element

#22
20140252422
2014-09-11

Cavity structures for MEMS devices

#23
20140213022
2014-07-31

Method of manufacturing a reduced free-charge carrier lifetime semiconductor structure

#24
20140203395
2014-07-24

Semiconductor package and method of manufacturing the same

#25
20140159051
2014-06-12

Monolithically integrated vertical JFET and Schottky diode

#26
20140042497
2014-02-13

Semiconductor physical quantity sensor and method for manufacturing the same

#27
20130292797
2013-11-07

FULLY ENCAPSULATED CONDUCTIVE LINES

#28
20130112985
2013-05-09

Monolithically integrated vertical JFET and Schottky diode

#29
20120235254
2012-09-20

Method of forming a die having an IC region adjacent a MEMS region

#30
20120211805
2012-08-23

CAVITY STRUCTURES FOR MEMS DEVICES

#31
20110156175
2011-06-30

Method of forming a die having an IC region adjacent a MEMS region

#32
20100330771
2010-12-30

Methods of forming moisture barrier capacitors in semiconductor components

#33
20100309649
2010-12-09

PHOTOELECTRONIC DEVICE HAVING A VARIABLE RESISTOR STRUCTURE

#34
20100117117
2010-05-13

Vertical IGBT Device

#35
20090311837
2009-12-17

Integrated circuit using complementary junction field effect transistor and MOS transistor in silicon and silicon alloys

#36
20090160020
2009-06-25

Moisture barrier capacitors in semiconductor components

#37
20090108288
2009-04-30

Semiconductor device having a plurality of elements on one semiconductor substrate and method of manufacturing the same

#38
20090057727
2009-03-05

Integrated circuit using complementary junction field effect transistor and MOS transistor in silicon and silicon alloys

#39
20080290407
2008-11-27

Semiconductor device with a resistance element in a trench

#40
20080245543
2008-10-09

MONOLITHIC INTEGRATED CIRCUIT ARRANGEMENT

#41
20080142923
2008-06-19

Semiconductor structure and method of manufacture

#42
20070296058
2007-12-27

Semiconductor structure of a high side driver and method for manufacturing the same

#43
20070262419
2007-11-15

Semiconductor Device

#44
20070200138
2007-08-30

Semiconductor device having IGBT and diode

#45
20070096144
2007-05-03

Integrated circuit using complementary junction field effect transistor and MOS transistor in silicon and silicon alloys

#46
20050139955
2005-06-30

Radio frequency integrated circuit, and method for manufacturing the same

#47
20050110154
2005-05-26

Semiconductor device

#48
20050012175
2005-01-20

Semiconductor substrate and manufacturing process therefor

#49
15704554
2018-12-25

Adjustable condenser

#50
15276333
2017-07-18

Interlayer via

#51
14588098
2016-12-13

Integrated circuit system with external resistor to provide constant current bias and method of manufacture thereof

#52
14271509
2015-07-14

Linear equalizer circuit and method thereof