ClassID:

207940

H01L27/0641 - CPC Classification

Classification description:

Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region without components of the field effect type

Sub-classes:
Recent Application in this class:
#1
20210384328
2021-12-09

Power generation element

#2
20210288044
2021-09-16

Floating base silicon controlled rectifier

#3
20210225999
2021-07-22

Adjustable multi-turn magnetic coupling device

#4
20210013164
2021-01-14

Semiconductor device

#5
20200051971
2020-02-13

Floating base silicon controlled rectifier

#6
20190312125
2019-10-10

Bipolar junction transistor (BJT) for liquid flow biosensing applications without a reference electrode and large sensing area

#7
20190296101
2019-09-26

Adjustable multi-turn magnetic coupling device

#8
20190295969
2019-09-26

Balance-unbalance converter and semiconductor integrated circuit having the same

#9
20180286941
2018-10-04

Radio frequency resistor element

#10
20180190644
2018-07-05

Silicon-controlled rectifiers having a cathode coupled by a contact with a diode trigger

#11
20180138122
2018-05-17

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME

#12
20170373492
2017-12-28

ESD protection circuit, differential transmission line, common mode filter circuit, ESD protection device, and composite device

#13
20170323883
2017-11-09

Dual-sided silicon integrated passive devices

#14
20170179216
2017-06-22

Adjustable multi-turn magnetic coupling device

#15
20170149438
2017-05-25

Facilitation of increased locking range transistors

#16
20170018546
2017-01-19

Dual-sided silicon integrated passive devices

#17
20170005036
2017-01-05

Semiconductor device including a fuse formed on a high thermal conductivity insulating film

#18
20160260708
2016-09-08

Magnetic multilayer structure

#19
20160163641
2016-06-09

Semiconductor device and fabrication method thereof

#20
20160148929
2016-05-26

Integrated circuit device

#21
20160148926
2016-05-26

Integrated circuit device

#22
20150340481
2015-11-26

LATCH-UP ROBUST SCR-BASED DEVICES

#23
20150311911
2015-10-29

Quantum tunneling devices and circuits with lattice-mismatched semiconductor structures

#24
20150200231
2015-07-16

Magnetic multilayer structure

#25
20140175552
2014-06-26

Semiconductor device

#26
20140104132
2014-04-17

Impedance matching network with improved quality factor and method for matching an impedance

#27
20140103447
2014-04-17

Power RF amplifiers

#28
20130320398
2013-12-05

Latch-up robust SCR-based devices

#29
20120309113
2012-12-06

Quantum tunneling devices and circuits with lattice-mismatched semiconductor structures

#30
20110086498
2011-04-14

Quantum tunneling devices and circuits with lattice-mismatched semiconductor structures

#31
20110034137
2011-02-10

Semiconductor integrated circuit device and radio frequency module

#32
20100047987
2010-02-25

METHOD OF FABRICATING A BIPOLAR TRANSISTOR

#33
20080317154
2008-12-25

SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE AND RADIO FREQUENCY MODULE

#34
20080173974
2008-07-24

Semiconductors device and method of manufacturing such a device

#35
20080169513
2008-07-17

Emitter ballasting by contact area segmentation in ESD bipolar based semiconductor component

#36
20080073641
2008-03-27

Quantum tunneling devices and circuits with lattice-mismatched semiconductor structures

#37
20080061420
2008-03-13

Integrated passive devices with high Q inductors

#38
20080012091
2008-01-17

Vertical LC tank device

#39
20080003731
2008-01-03

Monolithic vertical junction field effect transistor and schottky barrier diode fabricated from silicon carbide and method for fabricating the same

#40
20070145429
2007-06-28

Structure and method for a fast recovery rectifier structure

#41
20070052062
2007-03-08

Vertical LC tank device

#42
20060011924
2006-01-19

Monolithic vertical junction field effect transistor and Schottky barrier diode fabricated from silicon carbide and method for fabricating the same

#43
20050184357
2005-08-25

Semiconductor element, manufacturing method thereof, and high frequency integrated circuit using the semiconductor element