207965 ⎘
Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
Sub-classes:SEMICONDUCTOR STRUCTURE
#2SEMICONDUCTOR DEVICE, SEMICONDUCTOR MODULE, AND WIRELESS COMMUNICATION APPARATUS
#3FLIP-CHIP FIELD EFFECT TRANSISTOR LAYOUTS AND STRUCTURES
#4Layout pattern of semiconductor cell and forming method thereof
#5EPITAXIAL SOURCE OR DRAIN REGION WITH A WRAPPED CONDUCTIVE CONTACT
#6Nitride semiconductor device
#7SEMICONDUCTOR DEVICE
#8FULL WAFER DEVICE WITH MULTIPLE DIRECTIONAL INDICATORS
#9Nitride-based semiconductor device and method for manufacturing the same
#10Two-dimensional (2D) metal structure and method of forming the same
#11NITRIDE-BASED SEMICONDUCTOR IC CHIP AND METHOD FOR MANUFACTURING THE SAME
#12METHOD FOR PRODUCING III-N MATERIAL-BASED VERTICAL COMPONENTS
#13FIRST METAL STRUCTURE, LAYOUT, AND METHOD
#14Circuit cell for a standard cell semiconductor device
#15MONOLITHIC INTEGRATION OF DIVERSE DEVICE TYPES WITH SHARED ELECTRICAL ISOLATION
#16SEMICONDUCTOR STRUCTURE
#17Size-efficient mitigation of latchup and latchup propagation
#18ISOLATION STRUCTURE FOR ACTIVE DEVICES
#19INTEGRATED CIRCUIT STRUCTURE AND METHOD OF FORMING THE SAME
#20SEMICONDUCTOR DEVICE WITH LOW PINCH-OFF VOLTAGE AND METHODS FOR MANUFACTURING THE SAME
#21INTEGRATION OF COMPOUND-SEMICONDUCTOR-BASED DEVICES AND SILICON-BASED DEVICES
#22Variable width for RF neighboring stacks
#23POWER SEMICONDUCTOR DEVICE WITH AN AUXILIARY GATE STRUCTURE
#24Semiconductor device and method for manufacturing the same
#25Monolithic integration of diverse device types with shared electrical isolation
#26RF switch device having a highly resistive substrate, an isolation layer therein or thereon, and a trap-rich layer therein or thereon
#27Two-dimensional (2D) metal structure
#28Method of forming an array of multi-stack nanosheet structures having a dam structure isolating multi-stack transistors
#29TRANSISTOR STRUCTURE, SEMICONDUCTOR STRUCTURE AND FABRICATION METHOD THEREOF
#30Integrated semiconductor device
#31III-V semiconductor device with integrated power transistor and start-up circuit
#32Quantum structure getter for radiation hardened transistors
#33Semiconductor apparatuses and methods involving diamond and GaN-based FET structures
#34Semiconductor structure
#35Nitride semiconductor device
#36Apparatus and circuits including transistors with different polarizations and methods of fabricating the same
#37High voltage blocking III-V semiconductor device
#38Array of multi-stack nanosheet structures
#393D semiconductor structure and method of fabricating the same
#40Integrated circuit devices including a vertical field-effect transistor (VFET) and methods of forming the same
#41Semiconductor device and fabrication method thereof
#42Semiconductor structure and controlling method thereof
#43Distributed inductance integrated field effect transistor structure
#44Nitride semiconductor device
#45Integrated circuit devices with well regions and methods for forming the same
#46SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
#47Two-dimensional channel FET devices, systems, and methods of using the same for sequencing nucleic acids
#48Semiconductor devices having unit cell transistors with smoothed turn-on behavior and improved linearity
#49Integrated circuit structure and method of forming the same
#503D semiconductor structure and method of fabricating the same
#51Metal Oxide Thin Film Semiconductor Device Monolithically Integrated With Dissimilar Device on the Same Wafer
#52Isolation structure for active devices
#53Circuit structure
#54Epitaxial structure of N-face group III nitride, active device, and method for fabricating the same with integration and polarity inversion
#55SEMICONDUCTOR LOGIC ELEMENT AND LOGIC CIRCUITRIES
#56Multi-finger devices with reduced parasitic capacitance
#57Integrated circuit devices including a vertical field-effect transistor (VFET) and methods of forming the same
#58Integrated enhancement/depletion mode HEMT
#59Nitride semiconductor device
#60Integrated circuit, system for and method of forming an integrated circuit
#61Process of Forming an Electronic Device Including a Junction Field-Effect Transistor Having a Gate Within a Well Region
#62Semiconductor device
#63STACKED TRANSISTORS WITH DIELECTRIC BETWEEN SOURCE/DRAIN MATERIALS OF DIFFERENT STRATA
#64Power semiconductor device with a series connection of two devices
#65Methods for processing high electron mobility transistor (HEMT)
#66Configurations of composite devices comprising of a normally-on FET and a normally-off FET
#67Graphene FET devices, systems, and methods of using the same for sequencing nucleic acids
#68Power semiconductor device with an auxiliary gate structure
#69Apparatus and circuits including transistors with different polarizations and methods of fabricating the same
#70Test structure, semiconductor device and method for obtaining fabricating information in semiconductor device
#71Apparatus and circuits including transistors with different gate stack materials and methods of fabricating the same
#72Metal oxide thin film semiconductor device monolithically integrated with dissimilar device on the same wafer
#73Epitaxial structure of N-face group III nitride, active device, and method for fabricating the same with integration and polarity inversion
#74Semiconductor device
#75Isolation structure for active devices
#76Electronic device comprising a die comprising a high electron mobility transistor
#77High switching frequency, low loss and small form factor fully integrated power stage
#78Low voltage (power) junction FET with all-around junction gate
#79Group IIIA-N HEMT with a tunnel diode in the gate stack
#80Laterally adjacent and diverse group III-N transistors
#81Power semiconductor device with an auxiliary gate structure
#82Method for manufacturing an integrated enhancement/depletion mode HEMT
#83Device integrated with junction field effect transistor and method for manufacturing the same
#84Artificial synapse with hafnium oxide-based ferroelectric layer in CMOS front-end
#85Artificial synapse with hafnium oxide-based ferroelectric layer in CMOS front-end
#86Integrated circuit semiconductor devices including a metal oxide semiconductor (MOS) transistor
#87Integrated circuit devices with well regions
#88Semiconductor devices with back surface isolation
#89Single electron transistors having source/drain electrode insulating supports and an island extending therebetween
#90Semiconductor logic element and logic circuitries
#91Integrated circuits and devices with interleaved transistor elements, and methods of their fabrication
#92MONOLITHIC CO-INTEGRATION OF MOSFET AND JFET FOR NEUROMORPHIC/COGNITIVE CIRCUIT APPLICATIONS
#93Superjunction transistor arrangement and method of producing thereof
#94Charge/discharge control device and battery apparatus
#95GaN-on-sapphire monolithically integrated power converter
#96Monolithic co-integration of MOSFET and JFET for neuromorphic/cognitive circuit applications
#97Heterojunction field effect transistor device with serially connected enhancement mode and depletion mode gate regions
#98Artificial synapse with hafnium oxide-based ferroelectric layer in CMOS front-end
#99High electron mobility transistor (HEMT)
#100Semiconductor devices having a plurality of unit cell transistors that have smoothed turn-on behavior and improved linearity
#101Ultra-thin-body GaN on insulator device
#102Semiconductor device
#103Driving circuit of a power circuit
#104Integrated circuit device with adaptations for multiplexed biosensing
#105Low voltage (power) junction FET with all-around junction gate
#106Semiconductor device with high voltage field effect transistor and junction field effect transistor
#107Methods and devices integrating III-N transistor circuitry with Si transistor circuitry
#108Ferroelectric field effect transistors, pluralities of ferroelectric field effect transistors arrayed in row lines and column lines, and methods of forming a plurality of ferroelectric field effect transistors
#109Enhancement-mode/depletion-mode field-effect transistor GAN technology
#110Epitaxial structure of N-face group III nitride, active device, and method for fabricating the same with integration and polarity inversion
#111Epitaxial structure of N-face group III nitride, active device, and method for fabricating the same with integration and polarity inversion
#112Transistors with octagon waffle gate patterns
#113Group IIIA-N HEMT with a tunnel diode in the gate stack
#114Co-planar p-channel and n-channel gallium nitride-based transistors on silicon and techniques for forming same
#115Semiconductor device with III-nitride channel region and silicon carbide drift region
#116Enhancement-mode III-nitride devices
#117Graphene FET devices, systems, and methods of using the same for sequencing nucleic acids
#118AN APPARATUS AND METHOD FOR SENSING AN ANALYTE, USING A GRAPHENE CHANNEL, QUANTUM DOTS AND ELECTROMAGNETIC RADIATION
#119Complementary gallium nitride integrated circuits
#120Semiconductor device
#121High voltage device with multi-electrode control
#122System and method for depletion mode and enhancement mode transistors
#123Semiconductor device containing HEMT and MISFET and method of forming the same
#124Gallium nitride power amplifier
#125Semiconductor array and production method for micro device
#126Amplifiers and amplifier modules with shunt inductance circuits that include high-Q capacitors
#127Doherty amplifiers and amplifier modules with shunt inductance circuits that affect transmission line length between carrier and peaking amplifier outputs
#128Semiconductor substrate having amorphous and single crystalline III-V compound semiconductor layers
#129Integrated circuit, system for and method of forming an integrated circuit
#130Heteroepitaxial structures with high temperature stable substrate interface material
#131GaN devices on engineered silicon substrates
#132JFET and LDMOS transistor formed using deep diffusion regions
#133Semiconductor device
#134Manufacture method of low temperature poly-silicon TFT substrate and low temperature poly-silicon TFT substrate
#135On-chip DC-DC power converters with fully integrated GaN power switches, silicon CMOS transistors and magnetic inductors
#136Methods of fabricating integrated circuits and devices with interleaved transistor elements
#137Process of forming an electronic device including forming an electronic component and removing a portion of a substrate
#138Ferroelectric field effect transistors, pluralities of ferroelectric field effect transistors arrayed in row lines and column lines, and methods of forming a plurality of ferroelectric field effect transistors
#139Epitaxial structure of Ga-face group III nitride, active device, and method for fabricating the same
#140Method for forming a power semiconductor device and a power semiconductor device
#141Integrated circuits and methods of design and manufacture thereof
#142Heterojunction field effect transistor device with serially connected enhancement mode and depletion mode gate regions
#143High electron mobility transistor (HEMT)
#144GaN transistors with polysilicon layers used for creating additional components
#145Semiconductor device, antenna switch circuit, and wireless communication apparatus
#146Gallium nitride nanowire based electronics
#147Split-electrode vertical cavity optical device
#148Integrated circuit device with adaptations for multiplexed biosensing
#149Graphene FET devices, systems, and methods of using the same for sequencing nucleic acids
#150Method of fabricating non-etch gas cooled epitaxial stack for group IIIA-N devices
#151Dual wavelength hybrid device
#152Semiconductor devices with back surface isolation
#153Nitride semiconductor device and method of manufacturing the same
#154Integrated circuits and devices with interleaved transistor elements, and methods of their fabrication
#155Bidirectional normally-off III-V high electron mobility transistor (HEMT)devices and circuits
#1563D semiconductor device and structure
#157Integrated circuitry and methods of forming transistors
#158JEFT and LDMOS transistor formed using deep diffusion regions
#159Graphene FET devices, systems, and methods of using the same for sequencing nucleic acids
#160Semiconductor device with multiple carrier channels
#161Graphene FET devices, systems, and methods of using the same for sequencing nucleic acids
#162Semiconductor devices with gate electrodes on separate sets of high-k dielectric layers
#163Semiconductor device and semiconductor circuit including the semiconductor device with enhanced current-voltage characteristics
#164High voltage device with multi-electrode control
#165Methods of fabricating complementary gallium nitride integrated circuits
#166Semiconductor device and semiconductor circuit including the device
#167Switching device for switching radio frequency signals
#168Semiconductor device containing HEMT and MISFET and method of forming the same
#169Integrated circuit device with adaptations for multiplexed biosensing
#170Method for low temperature bonding and bonded structure
#171Integrated multichannel and single channel device structure and method of making the same
#172Integrated circuits and methods of design and manufacture thereof
#173Graphene FET devices, systems, and methods of using the same for sequencing nucleic acids
#174Method of manufacturing semiconductor devices by bonding a semiconductor disk on a base substrate, composite wafer and semiconductor device
#175Partial layer transfer system and method
#176Ferroelectric field effect transistors, pluralities of ferroelectric field effect transistors arrayed in row lines and column lines, and methods of forming a plurality of ferroelectric field effect transistors
#177Semiconductor device
#178Integrated circuitry and methods of forming transistors
#179GaN transistors with polysilicon layers used for creating additional components
#180Method for low temperature bonding and bonded structure
#181Semiconductor device which comprises transistor and diode
#182Forming JFET and LDMOS transistor in monolithic power integrated circuit using deep diffusion regions
#183Composite group III-V and group IV transistor having a switched substrate
#184Semiconductor device including oxide semiconductor
#185Ferroelectric field effect transistors, pluralities of ferroelectric field effect transistors arrayed in row lines and column lines, and methods of forming a plurality of ferroelectric field effect transistors
#186High voltage device with composite structure and a starting circuit
#187Method for low temperature bonding and bonded structure
#188Radiation-hardened dual gate semiconductor transistor devices containing various improved structures including MOSFET gate and JFET gate structures and related methods
#189Determining threshold voltage variations in field effect transistors
#190III-nitride device and method having a gate isolating structure
#191Gate structures with protected end surfaces to eliminate or reduce unwanted EPI material growth
#192Enhancement-mode III-nitride devices
#193Semiconductor device with inverters having transistors formed in different active regions
#194Electronic circuit and method for operating a transistor arrangement
#1953D semiconductor device and structure
#196Nitride semiconductor device
#197Matching of transistors
#198Optoelectronic integrated circuit
#199Power circuit, control method, power system, and package structure of power circuit
#200Semiconductor device and method of manufacturing the same
#201Methods and structures for eliminating or reducing line end epi material growth on gate structures
#202Bridging local semiconductor interconnects
#203Mechanism for forming gate
#204Semiconductor device
#205Electronic circuits including a MOSFET and a dual-gate JFET
#206Semiconductor device containing HEMT and MISFET and method of forming the same
#207GaN transistors with polysilicon layers for creating additional components
#208Monolithic composite III-nitride transistor with high voltage group IV enable switch
#209Gallium nitride nanowire based electronics
#210MULTILEVEL INVERTER DEVICE
#211Integrated circuits and methods of design and manufacture thereof
#212High voltage metal-oxide-semiconductor transistor device
#213Integrated circuitry comprising transistors with broken up active regions
#214JFET ESD protection circuit for low voltage applications
#215Electronic devices and components for high efficiency power circuits
#216Power semiconductor device with oscillation prevention
#217Semiconductor device
#218Enhancement-mode III-nitride devices
#219Inverter Circuit Including Short Circuit Protected Composite Switch
#220Integrated half-bridge circuit with low side and high side composite switches
#221Source/drain extension control for advanced transistors
#222Vertical GaN JFET with low gate-drain capacitance and high gate-source capacitance
#223Electronic circuit with a reverse conducting transistor device
#224Semiconductor devices including a first and second HFET and methods of manufacturing the same
#225Semiconductor device using 2-dimensional electron gas and 2-dimensional hole gas and method of manufacturing the semiconductor device
#226Monolithic integrated circuit chip integrating multiple devices
#227Integrated circuit devices with well regions and methods for forming the same
#228Semiconductor apparatus comprised of two types of transistors
#229Gate aligned contact and method to fabricate same
#230Electronic device with an active region and transistors
#231Fin-JFET
#232Vertical integrated semiconductor device with multiple continuous single crystal silicon layers vertically separated from one another
#233Composite semiconductor device with active oscillation prevention
#234Integrated field effect transistors with high voltage drain sensing
#235Rotated channel semiconductor field effect transistor
#236Source/drain extension control for advanced transistors
#237SiC crystalline on Si substrates to allow integration of GaN and Si electronics
#238Analog circuit cell array having some transistors that include two connected gate electrodes and two connected source regions
#239Semiconductor device
#240Semiconductor wafer, method of producing semiconductor wafer, electronic device, and method of producing electronic device
#241Parallel connection methods for high performance transistors
#242High density gallium nitride devices using island topology
#243Method of fabricating vertical integrated semiconductor device with multiple continuous single crystal silicon layers vertically separated from one another
#244GaN-BASED SEMICONDUCTOR DEVICE
#245Power amplifier
#246Semiconductor integrated circuit device with transistor and non-transistor regions
#247Method for forming antimony-based FETs monolithically
#248POLYGON SHAPED POWER AMPLIFIER CHIPS
#249DEVICE HAVING SERIES-CONNECTED HIGH ELECTRON MOBILITY TRANSISTORS AND MANUFACTURING METHOD THEREOF
#250Integrated Power Stage
#251Cascode scheme for improved device switching behavior
#252Low noise amplifiers including group III nitride based high electron mobility transistors
#253Semiconductor devices with back surface isolation
#254Source/drain extension control for advanced transistors
#255STATIC INDUCTION TRANSISTOR WITH DIELECTRIC CARRIER SEPARATION LAYER
#256Semiconductor device
#257DEVICE HAVING SERIES-CONNECTED HIGH ELECTRON MOBILITY TRANSISTORS AND MANUFACTURING METHOD THEREOF
#258Method For Low Temperature Bonding And Bonded Structure
#259Compound field effect transistor with multi-feed gate and serpentine interconnect
#260Integrated circuits and methods of design and manufacture thereof
#261Mechanism of forming SiC crystalline on Si substrates to allow integration of GaN and Si electronics
#262Method for operating semiconductor device
#263Low interconnect resistance integrated switches
#264Cell library, integrated circuit, and methods of making same
#265III-nitride switching device with an emulated diode
#266Semiconductor device and method
#267HIGH ELECTRON MOBILITY TRANSISTOR WITH RECESSED BARRIER LAYER
#268Semiconductor device
#269Fin-JFET
#270NITRIDE SEMICONDUCTOR DEVICE
#271VDMOS and JFET integrated semiconductor device
#272Method for forming antimony-based FETs monolithically
#273Monolithic integration of gallium nitride and silicon devices and circuits, structure and method
#274Electronic devices and components for high efficiency power circuits
#275NORMALIZED HYDROGEN SENSING AND METHODS OF FABRICATING A NORMALIZED HYDROGEN SENSOR
#276Semiconductor device and method for operating the same
#277Method for low temperature bonding and bonded structure
#278Semiconductor device wherein a first insulated gate field effect transistor is connected in series with a second field effect transistor
#279Voltage converters with integrated low power leaker device and associated methods
#280Integrated circuits and methods of design and manufacture thereof
#281Power transistor chip with built-in junction field effect transistor and application circuit thereof
#282Method for low temperature bonding and bonded structure
#283ANALOG CIRCUIT CELL ARRAY AND ANALOG INTEGRATED CIRCUIT
#284High current density power field effect transistor
#285Method for low temperature bonding and bonded structure
#286SEMICONDUCTOR DEVICE, AND ENERGY TRANSMISSION DEVICE USING THE SAME
#287Semiconductor device, and energy transmission device using the same
#288Fin-JFET
#289Integrated circuits and methods of design and manufacture thereof
#290GALLIUM NITRIDE DIODES AND INTEGRATED COMPONENTS
#291Integrated circuit switching device, structure and method of manufacture
#292SEMICONDUCTOR DEVICE
#293Bidirectional switch and method for driving bidirectional switch
#294Method for low temperature bonding and bonded structure
#295Method for low temperature bonding and bonded structure
#296Field effect transistor devices and methods
#297Merged and Isolated Power MESFET Devices
#298Producing reference voltages using transistors
#299JFET structure for integrated circuit and fabrication method
#300Method for low temperature bonding and bonded structure