ClassID:

207970

H01L27/095 - CPC Classification

Classification description:

Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being Schottky barrier gate field-effect transistors

Recent Application in this class:
#1
20250056878
2025-02-13

DEVICES FOR INTEGRATED FRONT-END CIRCUITS

#2
20250040244
2025-01-30

SEMICONDUCTOR ELECTRONIC DEVICE COMPRISING AN ELECTRONIC COMPONENT BASED ON HETEROSTRUCTURE AND MANUFACTURING PROCESS

#3
20250040175
2025-01-30

A VERTICAL HEMT, AN ELECTRICAL CIRCUIT, AND A METHOD FOR PRODUCING A VERTICAL HEMT

#4
20250006624
2025-01-02

SEMICONDUCTOR DEVICE

#5
20240405024
2024-12-05

INTEGRATED DEVICES WITH CONDUCTIVE BARRIER STRUCTURE

#6
20240304678
2024-09-12

METHODS OF FORMING HIGH ELECTRON MOBILITY TRANSISTORS WITH CONTROLLED GATE LENGTH AND HIGH ELECTRON MOBILITY TRANSISTORS WITH CONTROLLED GATE LENGTH

#7
20240304630
2024-09-12

SEMICONDUCTOR DEVICE

#8
20240274689
2024-08-15

HIGH ELECTRON MOBILITY TRANSISTOR AND ELECTRONIC DEVICE INCLUDING THE SAME

#9
20240194680
2024-06-13

BIDIRECTIONAL DEVICE

#10
20240170487
2024-05-23

GROUP III NITRIDE TRANSISTOR DEVICE

#11
20240145478
2024-05-02

Stacked Multilayer 3D GaN High Electron Mobility Transistor Structure and Process Method

#12
20240096726
2024-03-21

NITRIDE-BASED SEMICONDUCTOR DEVICE AND METHOD FOR OPERATING THE SAME

#13
20240038869
2024-02-01

NORMALLY-OFF MESFET DEVICE WITH STACKED GATE CONTACT

#14
20240038761
2024-02-01

Devices for integrated front-end circuits

#15
20230361126
2023-11-09

VERTICAL FIN-BASED FIELD EFFECT TRANSISTOR (FINFET) WITH CONNECTED FIN TIPS

#16
20230352487
2023-11-02

Nitride-based multi-channel switching semiconductor device and method for manufacturing the same

#17
20230335464
2023-10-19

III-NITRIDE DEVICES WITH THROUGH-VIA STRUCTURES

#18
20230290782
2023-09-14

Apparatus and circuits with dual threshold voltage transistors and methods of fabricating the same

#19
20230050918
2023-02-16

III-V semiconductor device with integrated power transistor and start-up circuit

#20
20220392895
2022-12-08

Semiconductor work function reference circuit for radiation detection

#21
20220320091
2022-10-06

Integrated semiconductor device

#22
20220310832
2022-09-29

III-V semiconductor device with integrated power transistor and start-up circuit

#23
20220208761
2022-06-30

III-V semiconductor device with integrated protection functions

#24
20220199825
2022-06-23

Semiconductor structure with trench junction barrier schottky (TJBS) diode

#25
20220093594
2022-03-24

Field-effect transistors (FET) circuits employing topside and backside contacts for topside and backside routing of FET power and logic signals, and related complementary metal oxide semiconductor (CMOS) circuits

#26
20220005806
2022-01-06

Semiconductor device and fabrication method thereof

#27
20210327875
2021-10-21

Semiconductor structure and methods for manufacturing the same

#28
20210125985
2021-04-29

Monolithic integrated circuit device having gate-sinking pHEMTs

#29
20200381425
2020-12-03

Monolithic integration of enhancement mode and depletion mode field effect transistors

#30
20200357909
2020-11-12

III-V semiconductor device with integrated power transistor and start-up circuit

#31
20200357907
2020-11-12

III-V semiconductor device with integrated protection functions

#32
20200227412
2020-07-16

Semiconductor device and manufacturing method of the same

#33
20200185543
2020-06-11

Method of manufacturing a semiconductor component

#34
20200135733
2020-04-30

Apparatus and circuits with dual threshold voltage transistors and methods of fabricating the same

#35
20190288125
2019-09-19

Schottky device and method of manufacture

#36
20190288123
2019-09-19

Surface MESFET

#37
20190237574
2019-08-01

Rectifier and rotating electric machine including rectifier

#38
20190181259
2019-06-13

Semiconductor device

#39
20190051649
2019-02-14

Semiconductor device and manufacturing method of the same

#40
20180374943
2018-12-27

Semiconductor devices having a plurality of unit cell transistors that have smoothed turn-on behavior and improved linearity

#41
20180294362
2018-10-11

Tunnel field effect trasnsistor

#42
20180212041
2018-07-26

Devices and methods for a power transistor having a Schottky or Schottky-like contact

#43
20180211878
2018-07-26

Semiconductor device

#44
20180197855
2018-07-12

Composite semiconductor device

#45
20180151568
2018-05-31

Semiconductor device

#46
20180138302
2018-05-17

Compound semiconductor device

#47
20180090476
2018-03-29

COMPOUND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

#48
20180012986
2018-01-11

Semiconductor device with vertically integrated pHEMTs

#49
20170373200
2017-12-28

Nitride semiconductor device

#50
20170365605
2017-12-21

NON-VOLATILE SCHOTTKY BARRIER FIELD EFFECT TRANSISTOR

#51
20170294531
2017-10-12

Semiconductor device with a recessed ohmic contact and methods of fabrication

#52
20170271333
2017-09-21

Semiconductor device and manufacturing method of the same

#53
20170133368
2017-05-11

High bandgap Schottky contact layer device

#54
20170098649
2017-04-06

Semiconductor device

#55
20170033031
2017-02-02

Power amplifier die having multiple amplifiers

#56
20160380090
2016-12-29

GaN semiconductor device structure and method of fabrication by substrate replacement

#57
20160372555
2016-12-22

Semiconductor device and semiconductor circuit including the device

#58
20160351567
2016-12-01

Switching device for switching radio frequency signals

#59
20160329890
2016-11-10

Semiconductor device

#60
20160300924
2016-10-13

MOSFET with integrated schottky diode

#61
20160284829
2016-09-29

Fault tolerant design for large area nitride semiconductor devices

#62
20160111417
2016-04-21

Electronic circuits including a MOSFET and a dual-gate JFET

#63
20160071781
2016-03-10

Integrated power module with improved isolation and thermal conductivity

#64
20160064376
2016-03-03

Semiconductor apparatus

#65
20160005847
2016-01-07

SEMICONDUCTOR APPARATUS

#66
20150349070
2015-12-03

Semiconductor device

#67
20150325675
2015-11-12

Method for yield improvement of TMBS devices

#68
20150270380
2015-09-24

Breakdown voltage multiplying integration scheme

#69
20150270266
2015-09-24

Semiconductor device and manufacturing method of the same

#70
20150236017
2015-08-20

Method of manufacturing precise semiconductor contacts

#71
20150221760
2015-08-06

Inverted III-nitride P-channel field effect transistor with hole carriers in the channel

#72
20150221727
2015-08-06

Inverted P-channel III-nitride field effect tansistor with Hole Carriers in the channel

#73
20150221647
2015-08-06

Complementary field effect transistors using gallium polar and nitrogen polar III-nitride material

#74
20150162252
2015-06-11

Fault tolerant design for large area nitride semiconductor devices

#75
20150137139
2015-05-21

Semiconductor device and method for fabricating a semiconductor device

#76
20150137135
2015-05-21

Semiconductor devices with integrated Schottky diodes and methods of fabrication

#77
20150054038
2015-02-26

Electronic circuits including a MOSFET and a dual-gate JFET

#78
20150014786
2015-01-15

High performance power cell for RF power amplifier

#79
20140284610
2014-09-25

Semiconductor device

#80
20140015591
2014-01-16

Gate protected semiconductor devices

#81
20130307091
2013-11-21

Schottky diodes having metal gate electrodes and methods of formation thereof

#82
20130292790
2013-11-07

Compound semiconductor device and manufacturing method thereof

#83
20130248945
2013-09-26

Electronic circuits including a MOSFET and a dual-gate JFET

#84
20130240893
2013-09-19

Breakdown voltage multiplying integration scheme

#85
20130234145
2013-09-12

Semiconductor device and method for fabricating a semiconductor device

#86
20130221409
2013-08-29

Semiconductor devices with 2DEG and 2DHG

#87
20130119443
2013-05-16

Semiconductor structure for an electronic interruptor power switch

#88
20130062667
2013-03-14

Enhancement/depletion PHEMT device

#89
20120267713
2012-10-25

Power semiconductor structure with schottky diode

#90
20120256274
2012-10-11

Schottky diodes having metal gate electrodes and methods of formation thereof

#91
20120228717
2012-09-13

Schottky diode and method of manufacture

#92
20120205724
2012-08-16

Electronic circuits including a MOSFET and a dual-gate JFET

#93
20120091513
2012-04-19

Semiconductor switch device and method of manufacturing semiconductor switch device

#94
20120007049
2012-01-12

NITRIDE-BASED SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

#95
20110316077
2011-12-29

Fabrication method of a power semicondutor structure with schottky diode

#96
20110263081
2011-10-27

Methods of manufacturing CMOS transistor

#97
20110215871
2011-09-08

Electronic circuits including a MOSFET and a dual-gate JFET

#98
20110175160
2011-07-21

SHORT-CHANNEL SCHOTTKY-BARRIER MOSFET DEVICE AND METHOD OF MANUFACTURE

#99
20110037106
2011-02-17

Semiconductor device and method of producing the same

#100
20100271133
2010-10-28

Electronic circuits including a MOSFET and a dual-gate JFET

#101
20100213556
2010-08-26

Metal source and drain transistor having high dielectric constant gate insulator

#102
20100155877
2010-06-24

Schottky diode for high speed and radio frequency application

#103
20100109099
2010-05-06

Semiconductor device and manufacturing method thereof

#104
20100032771
2010-02-11

SHORT-CHANNEL SCHOTTKY-BARRIER MOSFET DEVICE AND MANUFACTURING METHOD

#105
20100032731
2010-02-11

Schottky junction-field-effect-transistor (JFET) structures and methods of forming JFET structures

#106
20100025774
2010-02-04

SCHOTTKY BARRIER INTEGRATED CIRCUIT

#107
20100013018
2010-01-21

CMOS transistor and method of manufacturing the same

#108
20100006949
2010-01-14

Schottky barrier CMOS device and method

#109
20090283851
2009-11-19

Schottky diode for high speed and radio frequency application

#110
20090026501
2009-01-29

ENHANCEMENT - DEPLETION SEMICONDUCTOR STRUCTURE AND METHOD FOR MAKING IT

#111
20080308838
2008-12-18

Power switching transistors

#112
20080258226
2008-10-23

Methods for manufacturing a trench type semiconductor device having a thermally sensitive refill material

#113
20080023726
2008-01-31

Schottky gate metallization for semiconductor devices

#114
20080006898
2008-01-10

Semiconductor switching element and semiconductor circuit apparatus

#115
20070278519
2007-12-06

Enhancement Depletion Field Effect Transistor Structure and Method of Manufacture

#116
20070007605
2007-01-11

Transistor having high dielectric constant gate insulating layer and source and drain forming schottky contact with substrate

#117
20060281291
2006-12-14

Method for manufacturing a metal-semiconductor contact in semiconductor components

#118
20060244052
2006-11-02

Short-channel Schottky-barrier MOSFET device and manufacturing method

#119
20060237752
2006-10-26

Schottky barrier MOSFET device and circuit

#120
20060202299
2006-09-14

Semiconductor devices integrating high-voltage and low-voltage field effect transistors on the same wafer

#121
20060181824
2006-08-17

Schottky diode-based noise-removing semiconductor device and fabrication method therefor

#122
20060125121
2006-06-15

Capacitor-less 1T-DRAM cell with Schottky source and drain

#123
20060125040
2006-06-15

Cobalt silicide schottky diode on isolated well

#124
20060125019
2006-06-15

Gate defined Schottky diode

#125
20060102932
2006-05-18

Method of fabrication of a field effect transistor with materialistically different two etch stop layers in an enhanced mode transistor and an depletion mode transistor

#126
20060079059
2006-04-13

Transistor having high dielectric constant gate insulating layer and source and drain forming schottky contact with substrate

#127
20060027840
2006-02-09

Monolithic integrated enhancement mode and depletion mode field effect transistors and method of making the same

#128
20060022293
2006-02-02

Economical and very simple to fabricate single device equivalent to CMOS, and other semiconductor devices in compensated semiconductor

#129
20050287730
2005-12-29

Schottky barrier CMOS device and method

#130
20050263789
2005-12-01

Field effect transistor

#131
20050184343
2005-08-25

MESFETs integrated with MOSFETs on common substrate and methods of forming the same

#132
20050161758
2005-07-28

Schottky with thick trench bottom and termination oxide and process for manufacture

#133
20050110054
2005-05-26

Monolithic integrated enhancement mode and depletion mode field effect transistors and method of making the same

#134
20050106821
2005-05-19

Transistor having high dielectric constant gate insulating layer and source and drain forming Schottky contact with substrate

#135
20050104152
2005-05-19

Schottky barrier integrated circuit

#136
20050098832
2005-05-12

Semiconductor device and manufacturing method thereof

#137
20050051815
2005-03-10

Short-channel Schottky-barrier MOSFET device and manufacturing method

#138
15891336
2019-09-17

Monolithic integration of group III nitride epitaxial layers

#139
15148991
2018-04-24

Monolithic integration of group III nitride epitaxial layers

#140
15072242
2016-11-01

Microfluidic impingement jet cooled embedded diamond GaN HEMT