208215 ⎘
Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor; Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
Sub-classes:SEMICONDUCTOR DEVICE
#2SEMICONDUCTOR DEVICE
#3SEMICONDUCTOR DEVICE
#4SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF
#5SEMICONDUCTOR DEVICE
#6SEMICONDUCTOR MODULE
#7SILICON CARBIDE DEVICE WITH TRANSISTOR CELL AND CLAMP REGION
#8Semiconductor Device and Fabricating Method Thereof
#9SEMICONDUCTOR DEVICE HAVING DOUBLE-GATE STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND ELECTRONIC APPARATUS
#10SEMICONDUCTOR DEVICE WITH ENHANCED AVALANCHE RUGGEDNESS
#11VERTICAL MOSFET WITH HIGH SHORT CIRCUIT WITHSTAND TIME CAPABILITY
#12BIDIRECTIONAL POWER DEVICE AND METHOD FOR MANUFACTURING THE SAME
#13Semiconductor device
#14LDMOS HAVING MULTIPLE FIELD PLATES AND ASSOCIATED MANUFACTURING METHOD
#15METHOD OF FORMING HIGH VOLTAGE TRANSISTOR AND STRUCTURE RESULTING THEREFROM
#16SEMICONDUCTOR DEVICE AND METHOD OF PRODUCING THEREOF
#17METHODS AND SYSTEMS OF OPERATING A PNP BI-DIRECTIONAL DOUBLE-BASE BIPOLAR JUNCTION TRANSISTOR
#18SEMICONDUCTOR STRUCTURE AND PREPARATION METHOD THEREOF
#19SEMICONDUCTOR DEVICE
#20SEMICONDUCTOR STRUCTURE AND FABRICATION METHOD THEREOF
#21MASK-FREE PROCESS FOR IMPROVING DRAIN TO GATE BREAKDOWN VOLTAGE IN SEMICONDUCTOR DEVICES
#22Semiconductor device and fabrication method for semiconductor device
#23GALLIUM NITRIDE POWER TRANSISTOR
#24High voltage MOSFET device with improved breakdown voltage
#25Partial discharge suppression in high voltage solid-state devices
#26Schottky barrier diode
#27SEMICONDUCTOR DEVICE
#28Semiconductor device having fully oxidized gate oxide layer and method for making the same
#29Semiconductor device and fabrication method for semiconductor device
#30REVERSE BLOCKING GALLIUM NITRIDE HIGH ELECTRON MOBILITY TRANSISTOR
#31Semiconductor structure and operation circuit
#32Transistor Device
#33Semiconductor device having fully oxidized gate oxide layer and method for making the same
#34Mask-free process for improving drain to gate breakdown voltage in semiconductor devices
#35SEMICONDUCTOR DEVICE AND METHOD OF MAKING A SEMICONDUCTOR DEVICE
#36Semiconductor device
#37LDMOS device and method for preparing same
#38SEMICONDUCTOR DEVICES WITH CLASS IV CHANNEL REGION AND CLASS III-V DRIFT REGION
#39LDMOS having multiple field plates and associated manufacturing method
#40Bidirectional power device and method for manufacturing the same
#41Power semiconductor device and manufacturing method thereof
#42CHARGE BALANCED RECTIFIER WITH SHIELDING
#43Metal oxide semiconductor device and method for manufacturing the same
#44Semiconductor device, method for manufacturing semiconductor device, inverter circuit, drive device, vehicle, and elevator
#45Manufacturing method of high-voltage semiconductor device with increased breakdown voltage
#46TVS device and manufacturing method therefor
#47Semiconductor device and manufacturing method
#48Semiconductor device with a protected element
#49IGBT and manufacturing method therefor
#50Transient voltage suppression device and manufacturing method therefor
#51Bandgap reference circuit including vertically stacked active SOI devices
#52Semiconductor Device and Fabricating Method Thereof
#53Semiconductor device and electric device
#54Partial discharge suppression in high voltage solid-state devices
#55Schottky barrier diode
#56SiC device with channel regions extending along at least one of the (1-100) plane and the (-1100) plane and methods of manufacturing thereof
#57System on chip
#58Semiconductor device and method for manufacturing semiconductor device
#59Semiconductor device
#60Circuit device, light source device, and electronic apparatus
#61Semiconductor device and manufacturing method thereof
#62Semiconductor device and fabrication method for semiconductor device
#63Semiconductor device and manufacturing method thereof
#64High-voltage semiconductor device with increased breakdown voltage
#65ESD protection diode
#66Semiconductor device and diode
#67Semiconductor device and method for manufacturing semiconductor device
#68SiC device and methods of manufacturing thereof
#69SRAM source-drain structure
#70Semiconductor device with surge current protection
#71HIGH VOLTAGE DEVICE AND MANUFACTURING METHOD THEREOF
#72Power Semiconductor Devices, Methods, and Structures with Embedded Dielectric Layers Containing Permanent Charges
#73Structure and method for metal gates with roughened barrier layer
#74Semiconductor device
#75SiC-SOI device and manufacturing method thereof
#76Semiconductor apparatus
#77Extended drain MOSFETs (EDMOS)
#78Gallium nitride high electron mobility transistor having high breakdown voltage and formation method therefor
#79Power electronic arrangement
#80Semiconductor device
#81Thin film transistors for high voltage applications
#82Semiconductor device and diode
#83Stacked integrated circuit
#84POWER SEMICONDUCTOR DEVICE
#85Semiconductor device comprising a three-dimensional field plate
#86APPARATUS AND METHOD FOR VOLTAGE DISTRIBUTION
#87Termination design for trench superjunction power MOSFET
#88Semiconductor device
#89Nitride power transistor and manufacturing method thereof
#90Lateral MOSFET
#91Semiconductor device and method for manufacturing the same
#92Epitaxial structure of trench MOSFET devices
#93Structure and method for metal gates with roughened barrier layer
#94SCHOTTKY DIODE
#95Power device with multiple field stop layers
#96Method of manufacturing a semiconductor device
#97Semiconductor device and method for manufacturing semiconductor device
#98Semiconductor device and fabricating method thereof
#99Power semiconductor devices, methods, and structures with embedded dielectric layers containing permanent charges
#100Semiconductor structure and manufacturing method thereof and terminal area structure of semiconductor device
#101Method for fabricating power semiconductor device
#102Semiconductor device, inverter circuit, drive device, vehicle, and elevating machine
#103Semiconductor device having groove-shaped via-hole
#104Silicon-carbide trench gate MOSFETs and methods of manufacture
#105IGBT WITH IMPROVED REVERSE BLOCKING CAPABILITY
#106FinFET LDMOS devices with improved reliability
#107Semiconductor device and manufacturing method thereof
#108High-voltage semiconductor device
#109SEMICONDUCTOR DEVICE AND SEMICONDUCTOR SYSTEM INCLUDING SEMICONDUCTOR DEVICE
#110Semiconductor devices having fin-shaped patterns with inflection points
#111Semiconductor device
#112High power semiconductor device
#113Trench Edge Termination Structure for Power Semiconductor Devices
#114High voltage semiconductor devices including main conductive pattern, auxiliary conductive pattern, and spacer therebetween
#115Power semiconductor devices, methods, and structures with embedded dielectric layers containing permanent charges
#116Over-voltage protection circuit
#117GATE ELECTRODE STRUCTURE AND HIGH VOLTAGE SEMICONDUCTOR DEVICE HAVING THE SAME
#118Lateral MOSFET
#119Semiconductor device having an electrostatic protection element
#120Apparatus and method for variable voltage distribution
#121High voltage semiconductor device
#122Semiconductor device
#123Semiconductor device with vertical field floating rings and methods of fabrication thereof
#124Method of localized modification of the stresses in a substrate of the SOI type, in particular FD SOI type, and corresponding device
#125Semiconductor device including an edge construction with straight sections and corner sections
#126High electron mobility transistor
#127Field effect transistor
#128Electric assembly including a semiconductor switching device and a clamping diode
#129CIRCUIT BOARD AND ELECTRONIC DEVICE
#130Laterally diffused metal-oxide-semiconductor transistor and manufacturing method thereof
#131Semiconductor device
#132SEMICONDUCTOR DEVICE
#133Semiconductor device and fabricating method thereof
#134Method of manufacturing a semiconductor device having groove-shaped via-hole
#135Semiconductor device having a buried electrode and manufacturing method thereof
#136Silicon-carbide trench gate MOSFETs
#137Charge compensation device and manufacturing therefor
#138IGBT manufacturing method
#139Semiconductor devices with vertical field floating rings and methods of fabrication thereof
#140CMOS RF switch device and method for biasing the same
#141SEMICONDUCTOR DEVICE
#142Semiconductor device having different types of thin film transistors
#143Apparatus and methods for generating a variable regulated voltage
#144NITRIDE POWER TRANSISTOR AND MANUFACTURING METHOD THEREOF
#145Deep trench isolation
#146Semiconductor device with surge current protection
#147Wide band gap semiconductor device
#148Semiconductor device and method for manufacturing the same
#149Gate pad and gate feed breakdown voltage enhancement
#150Method and apparatus for power device with depletion structure
#151Field Plates on Two Opposed Surfaces of Double-Base Bidirectional Bipolar Transistor: Devices, Methods, and Systems
#152Semiconductor device and method for manufacturing semiconductor device
#153Semiconductor device
#154INTEGRATED CIRCUIT DEVICE INCLUDING BLOCKING INSULATING LAYER
#155LDMOS for high frequency power amplifiers
#156Semiconductor device and method for fabricating semiconductor device
#157FIELD EFFECT TRANSISTOR WITH CHANNEL CORE MODIFIED FOR A BACKGATE BIAS AND METHOD OF FABRICATION
#158Group III-V Transistor Utilizing a Substrate Having a Dielectrically-Filled Region
#159Charge compensation device and manufacturing therefor
#160Semiconductor device and fabrication method thereof
#161Circuit arrangement for modeling transistor layout characteristics
#162Semiconductor device and method of fabricating the same
#163Semiconductor device and method of manufacturing the same
#164Zener diode having a polysilicon layer for improved reverse surge capability and decreased leakage current
#165Zener diode having a polysilicon layer for improved reverse surge capability and decreased leakage current
#166Zener diode devices and related fabrication methods
#167Silicon carbide semiconductor device
#168Wide band-gap semiconductor device including schotky electrode and method for producing same
#169Semiconductor device and method for manufacturing the same
#170Semiconductor device and method for manufacturing semiconductor device
#171Flexible device modulation by oxide isolation structure selective etching process
#172Semiconductor device and method for manufacturing the same
#173Method for manufacturing a semiconductor device with step-shaped edge termination
#174Power semiconductor device with embedded field electrodes
#175Semiconductor device having oxide semiconductor channel
#176Semiconductor device
#177Transverse ultra-thin insulated gate bipolar transistor having high current density
#178Method and apparatus for power device with depletion structure
#179Method for manufacturing semiconductor device
#180ISOLATION METHODS FOR LEAKAGE, LOSS AND NON-LINEARITY MITIGATION IN RADIO-FREQUENCY INTEGRATED CIRCUITS ON HIGH-RESISTIVITY SILICON-ON-INSULATOR SUBSTRATES
#181Strained FinFET and method for manufacturing the same
#182Drain Extended MOS Transistors With Split Channel
#183Trench-based power semiconductor devices with increased breakdown voltage characteristics
#184Semiconductor device
#185Semiconductor device and method for fabricating the same
#186Semiconductor device and method for fabricating the same
#187Processing system with low power wake-up pad
#188Semiconductor device having gate wire disposed on roughened field insulating film
#189Power semiconductor device and method of manufacturing the same
#190Semiconductor device and method for producing same
#191Method of localized modification of the stresses in a substrate of the SOI type, in particular FD SOI type, and corresponding device
#192Semiconductor device including a drift zone and a drift control zone
#193Semiconductor arrangement and method of forming
#194Semiconductor device having groove-shaped via-hole
#195Semiconductor device having groove-shaped via-hole
#196Semiconductor device having groove-shaped via-hole
#197Semiconductor device having groove-shaped via-hole
#198Semiconductor device having groove-shaped via-hole
#199Semiconductor device having groove-shaped via-hole
#200Semiconductor device having groove-shaped via-hole
#201Semiconductor device having groove-shaped via-hole
#202Semiconductor device having groove-shaped via-hole
#203Semiconductor device having groove-shaped via-hole
#204Semiconductor device having groove-shaped via-hole
#205Insulated gate bipolar transistor including emitter short regions
#206Semiconductor device and manufacturing method
#207Deep trench isolation
#208Method and system for junction termination in GaN materials using conductivity modulation
#209Semiconductor device
#210Semiconductor device with step-shaped edge termination, and method for manufacturing a semiconductor device
#211Semiconductor device including two groove-shaped patterns that include two bent portions
#212Semiconductor device including two groove-shaped patterns
#213MOSFET device
#214Lateral MOSFET
#215Semiconductor device and method of manufacturing semiconductor device
#216Power semiconductor devices, methods, and structures with embedded dielectric layers containing permanent charges
#217Semiconductor device
#218Silicon carbide bipolar junction transistor including shielding regions
#219Schottky barrier diode and method for manufacturing schottky barrier diode
#220POWER DEVICE AND FABRICATING METHOD THEREOF
#221Semiconductor component and method for producing it
#222Isolated device and manufacturing method thereof
#223Semiconductor device having groove-shaped via-hole
#224SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF
#225Semiconductor device
#226Semiconductor device having groove-shaped via-hole
#227Semiconductor device having groove-shaped via-hole
#228Semiconductor device including two groove-shaped patterns
#229Semiconductor device having groove-shaped via-hole
#230Method and system for fabricating edge termination structures in GaN materials
#231Method and system for junction termination in GaN materials using conductivity modulation
#232Semiconductor device having groove-shaped via-hole
#233SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
#234Semiconductor device having groove-shaped via-hole
#235Punch-through semiconductor device and method for producing same
#236Semiconductor device having groove-shaped via-hole
#237Semiconductor device having groove-shaped via-hole
#238Semiconductor device having groove-shaped via-hole
#239Semiconductor device and method for manufacturing semiconductor device
#240Trench-based power semiconductor devices with increased breakdown voltage characteristics
#241Discrete semiconductor device and method of forming sealed trench junction termination
#242CMOS RF switch device and method for biasing the same
#243High linearity CMOS RF switch passing large signal and quiescent power amplifier current
#244Apparatus and method for directional coupling
#245Voltage distribution for controlling CMOS RF switch
#246Apparatus and method for disabling well bias
#247Apparatus and method for well buffering
#248Apparatus and method for diffusion sensing
#249APPARATUS AND METHOD FOR VOLTAGE DISTRIBUTION
#250APPARATUS AND METHOD FOR VARIABLE VOLTAGE FUNCTION
#251APPARATUS AND METHOD FOR VARIABLE VOLTAGE DISTRIBUTION
#252Semiconductor device and method for manufacturing the same
#253Semiconductor device and method for fabricating the same
#254Semiconductor device and power conversion apparatus using the same
#255Schottky barrier diode and method for manufacturing Schottky barrier diode
#256Semiconductor device and manufacturing method
#257Semiconductor device having groove-shaped pattern
#258NITRIDE SEMICONDUCTOR DEVICE
#259Semiconductor device having oxide semiconductor transistor
#260Semiconductor device having groove-shaped via-hole
#261Circuit configuration and manufacturing processes for vertical transient voltage suppressor (TVS) and EMI filter
#262Semiconductor device and method for its production
#263Semiconductor device and method for fabricating the same
#264Trench-based power semiconductor devices with increased breakdown voltage characteristics
#265Trench-based power semiconductor devices with increased breakdown voltage characteristics
#266Trench-based power semiconductor devices with increased breakdown voltage characteristics
#267Discrete semiconductor device and method of forming sealed trench junction termination
#268TRENCH SCHOTTKY WITH MULTIPLE EPI STRUCTURE
#269Method for manufacturing a semiconductor substrate including laser annealing
#270Method of making silicon carbide semiconductor device having multi-layered passivation film with uneven surfaces
#271GaN-based semiconductor device and method of manufacturing the same
#272Semiconductor component and method for producing it
#273Semiconductor device with a semiconductor body and method for producing it
#274Circuit configuration and manufacturing processes for vertical transient voltage suppressor (TVS) and EMI filter
#275Semiconductor device having groove-shaped via-hole
#276Power semiconductor component with a drift zone and a high-dielectric compensation zone and method for producing a compensation zone
#277Junction termination structures for wide-bandgap power devices
#278Semiconductor device for preventing defective filling of interconnection and cracking of insulating film
#279Semiconductor device and method for fabricating the same
#280SiC trench transistor device and methods of manufacturing thereof
#281High electron mobility transistor
#282Termination design for trench superjunction power MOSFET
#283Structure and method for metal gates with roughened barrier layer
#284LDMOS FinFET structures with trench isolation in the drain extension
#285High-voltage semiconductor device and method for manufacturing the same
#286Double diffused metal oxide semiconductor device and manufacturing method thereof
#287Tapered polysilicon gate layout for power handling improvement for radio frequency (RF) switch applications
#288Over-voltage protection circuit
#289Electronic switch and active artificial dielectric
#2903D fin tunneling field effect transistor
#291Metal oxynitride diode devices