208216 ⎘
POWER SEMICONDUCTOR DEVICE AND POWER CONVERTER
#2SEMICONDUCTOR DEVICE
#3SEMICONDUCTOR DEVICE
#4SEMICONDUCTOR DEVICE
#5SEMICONDUCTOR DEVICE HAVING LOW-RESISTANCE GATE CONNECTOR
#6METHOD AND SYSTEM OF JUNCTION TERMINATION EXTENSION IN HIGH VOLTAGE SEMICONDUCTOR DEVICES
#7SEMICONDUCTOR DEVICE
#8Semiconductor Device with Compensation Structure
#9SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
#10POWER MOSFET WITH REDUCED CURRENT LEAKAGE AND METHOD OF FABRICATING THE POWER MOSFET
#11SEMICONDUCTOR DEVICE
#12GATE-ALL-AROUND STRUCTURE WITH SELF SUBSTRATE ISOLATION AND METHODS OF FORMING THE SAME
#13SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD
#14SiC SEMICONDUCTOR DEVICE WITH INSULATING FILM AND ORGANIC INSULATING LAYER
#15CONCEPT FOR SILICON CARBIDE POWER DEVICES
#16RC-IGBT
#17METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE
#18SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING
#19silicon carbide semiconductor device
#20SEMICONDUCTOR DEVICE
#21SEMICONDUCTOR DEVICE, SEMICONDUCTOR CIRCUIT, AND METHOD OF CONTROLLING SEMICONDUCTOR DEVICE
#22Semiconductor device
#23SEMICONDUCTOR DEVICE
#24HETEROGENEOUS SUPERJUNCTION DEVICES
#25SEMICONDUCTOR DEVICE INCLUDING COMMON BODY BIAS REGION
#26SEMICONDUCTOR DEVICE HAVING A PROTRUSION PROJECTION FORMED UNDER A GATE ELECTRODE AND BETWEEN BODY REGIONS
#27MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE
#28SEMICONDUCTOR DEVICE INCLUDING ACTIVE DIODE AREA
#29SEMICONDUCTOR DEVICE
#30SEMICONDUCTOR DEVICE
#31COMBINED CHARGE BALANCE AND EDGE TERMINATION SURFACE PASSIVATION FOR A SEMICONDUCTOR DEVICE AND METHODS OF FABRICATING THE SAME
#32SEMICONDUCTOR DEVICE
#33silicon carbide semiconductor device
#34METHOD FOR MANUFACTURING A VERTICAL FIELD EFFECT TRANSISTOR STRUCTURE AND CORRESPONDING VERTICAL FIELD EFFECT TRANSISTOR STRUCTURE
#35SEMICONDUCTOR POWER DEVICE WITH IMPROVED JUNCTION TERMINATION EXTENSION
#36SEMICONDUCTOR DEVICE
#37SEMICONDUCTOR DEVICE
#38SEMICONDUCTOR ELEMENTS WITH FIELD SHIELDING BY POLARIZATION DOPING
#39SEMICONDUCTOR DEVICE
#40SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
#41POWER SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
#42SEMICONDUCTOR DEVICE
#43REVERSE-CONDUCTING IGBT CHIP
#44SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF
#45SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
#46SEMICONDUCTOR STRUCTURE AND METHOD OF MANUFACTURING THE SAME
#47SEMICONDUCTOR DEVICE
#48POWER CONVERSION APPARATUS AND BIDIRECTIONAL SWITCH
#49SEMICONDUCTOR DEVICE, METHOD FOR PREPARING SAME, AND ELECTRONIC DEVICE
#50SILICON CARBIDE SEMICONDUCTOR DEVICE
#51FIELD EFFECT TRANSISTOR AND METHOD OF MANUFACTURING THE SAME
#52SILICON CARBIDE SEMICONDUCTOR DEVICE
#53Semiconductor device and method of manufacturing the same
#54Semiconductor device and fabrication method for semiconductor device
#55SEMICONDUCTOR DEVICE
#56SEMICONDUCTOR MANUFACTURING
#57Semiconductor device
#58LOW-LEAKAGE SCHOTTKY DIODES AND METHOD OF MAKING A POWER SEMICONDUCTOR DEVICE
#59NITRIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR DEVICE
#60ELECTRONIC DEVICE WITH REDUCED SWITCHING OSCILLATIONS
#61INPUT CAPACITANCE ENHANCEMENT FOR ESD RUGGEDNESS IN SEMICONDUCTOR DEVICES
#62SEMICONDUCTOR DEVICE
#63SEMICONDUCTOR DEVICE
#643D ADVANCED TRANSISTOR ARCHITECTURE INTEGRATED WITH SOURCE/DRAIN SPIDER DESIGN
#65Semiconductor device
#66Power semiconductor device
#67ISOLATION OF SEMICONDUCTOR DEVICE
#68Concept for silicon carbide power devices
#69Power semiconductor device having a barrier region
#70METHOD OF FORMING POWER SEMICONDUCTOR DEVICE
#71EDGE TERMINATION STRUCTURES FOR SEMICONDUCTOR DEVICES
#72Semiconductor Component Having A SiC Semiconductor Body
#73SEMICONDUCTOR DEVICE
#74GALLIUM OXIDE SEMICONDUCTOR STRUCTURE, VERTICAL GALLIUM OXIDE-BASED POWER DEVICE, AND PREPARATION METHOD
#75Semiconductor structure and associated fabricating method
#76Method for manufacturing an integrated circuit comprising an N-type laterally diffused metal oxide semiconductor (NLDMOS) transistor
#77Semiconductor device with suppression of decrease of withstand voltage, and method for manufacturing the semiconductor device
#78Semiconductor device and method of manufacturing the same
#79Semiconductor device and fabrication method for semiconductor device
#80Multi-Layer Hybrid Edge Termination for III-N Power Devices
#81SEMI-CONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF
#82SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME
#83SEMICONDUCTOR POWER DEVICES HAVING DOPED AND SILICIDED POLYSILICON TEMPERATURE SENSORS THEREIN
#84SEMICONDUCTOR DEVICE HAVING NEEDLE-SHAPED FIRST FIELD PLATE STRUCTURES AND NEEDLE-SHAPED SECOND FIELD PLATE STRUCTURES
#85SEMICONDUCTOR DEVICE HAVING NANOSHEET TRANSISTOR AND METHODS OF FABRICATION THEREOF
#86SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE
#87Transient-voltage-suppression protection device, manufacturing process and electronic product
#88Semiconductor manufacturing
#89TRANSISTOR HAVING HIGH WITHSTAND VOLTAGE AND HIGH ELECTRON MOBILITY AND PREPARATION METHOD THEREFOR
#90Field effect transistor including a downward-protruding gate electrode and methods for forming the same
#91Semiconductor device
#92Semiconductor device
#93TRANSISTOR DEVICES HAVING SOURCE/DRAIN STRUCTURE CONFIGURED WITH HIGH GERMANIUM CONTENT PORTION
#94ESD PROTECTION DEVICE
#95Semiconductor device and manufacturing method thereof
#96Power semiconductor device
#97Semiconductor device having nanosheet transistor and methods of fabrication thereof
#98SIC EPITAXIAL WAFER, MANUFACTURING APPARATUS OF A SIC EPITAXIAL WAFER, FABRICATION METHOD OF A SIC EPITAXIAL WAFER, AND SEMICONDUCTOR DEVICE
#99GROUP III NITRIDE SEMICONDUCTOR DEVICE WITH FIRST AND SECOND CONDUCTIVE LAYERS
#100Semiconductor device and method for manufacturing the same
#101Concept for silicon for carbide power devices
#102Edge termination structures for semiconductor devices
#103SEMICONDUCTOR DEVICE
#104High-voltage semiconductor device
#105Semiconductor device and method of manufacturing semiconductor device
#106Semiconductor device
#107Super junction semiconductor device and method of manufacturing the same
#108Semiconductor device
#109Gate-all-around structure with self substrate isolation and methods of forming the same
#110Semiconductor devices
#111Method and system of junction termination extension in high voltage semiconductor devices
#112Semiconductor device with a passivation layer and method for producing thereof
#113POWER MOSFET WITH REDUCED CURRENT LEAKAGE AND METHOD OF FABRICATING THE POWER MOSFET
#114Silicon carbide components and methods for producing silicon carbide components
#115Etch-less AlGaN GaN trigate transistor
#116Semiconductor device and method of manufacturing the same
#117Semiconductor Device
#118Trench planar MOS cell for transistors
#119Semiconductor device
#120Semiconductor component having a SiC semiconductor body
#121Semiconductor structure and preparation method thereof
#122Semiconductor devices and methods of manufacturing the same
#123Integrated circuit comprising an NLDMOS transistor
#124Semiconductor structure, transistor including the same, and method of manufacturing transistor
#125Semiconductor device
#126Semiconductor device and power converter
#127Method of manufacturing semiconductor integrated circuit
#128Electrostatic discharge handling for sense IGBT using Zener diode
#129Semiconductor device
#130Gate-all-around structure with self substrate isolation and methods of forming the same
#131Semiconductor device
#132Silicon carbide semiconductor device
#133Power semiconductor devices having gate trenches and buried edge terminations and related methods
#134Semiconductor device
#135Semiconductor manufacturing
#136Semiconductor device having a transistor cell region and a termination region with needle-shaped field plate structures
#137Method of processing a power semiconductor device
#138Integrated circuit layout cell, integrated circuit layout arrangement, and methods of forming the same
#139Semiconductor device
#140IGBT with dV/dt controllability
#141Semiconductor device and manufacturing method
#142P-type MOSFET and method for manufacturing same
#143Semiconductor devices and methods for fabricating the same
#144Passivated transistors
#145Semiconductor device and method of manufacturing semiconductor device
#146Power semiconductor device and method
#147Semiconductor structure and associated fabricating method
#148Silicon carbide device with compensation layer and method of manufacturing
#149Column IV transistors for PMOS integration
#150Semiconductor devices comprising getter layers and methods of making and using the same
#151Semiconductor device
#152Semiconductor device and fabrication method for semiconductor device
#153Semiconductor device
#154Semiconductor device and method of manufacturing the same
#155Semiconductor devices and methods for forming a semiconductor device
#156Semiconductor device with higher breakdown voltage and electronic apparatus
#157Semiconductor device and fabrication method thereof
#158SRAM structure
#159Semiconductor device having an edge termination area with trench electrodes at different electric potentials, and method for manufacturing thereof
#160Semiconductor device with sensor for crack detection
#161SEMICONDUCTOR DEVICE HAVING A GATE INSULATING FILM HAVING A HIGH DIELECTRIC CONSTANT PORTION FOR RELAXING AN ELECTRIC FIELD GENERATED IN THE GATE INSULATING FILM
#162Solar cell and solar cell module
#163Vertical transistor device having a discharge region comprising at least one lower dose section and located at least partially below a gate electrode pad
#164Semiconductor device including electrode trench structure and isolation trench structure and manufacturing method therefore
#165Deep source and drain for transistor structures with back-side contact metallization
#166Silicon-controlled-rectifier electrostatic protection structure and fabrication method thereof
#167Fast recovery inverse diode
#168Group III nitride semiconductor device with first and second conductive layers
#169SiC semiconductor device with insulating film and organic insulating layer
#170Silicon carbide epitaxial substrate and silicon carbide semiconductor device
#171Solid power semiconductor field effect transistor structure
#172Metal-oxide-semiconductor transistor and method of fabricating the same
#173Die stack assembly using an edge separation structure for connectivity through a die of the stack
#174Semiconductor power device
#175Semiconductor device including a silicon carbide layer
#176Semiconductor device
#177Field plates on two opposed surfaces of double-base bidirectional bipolar transistor: devices, methods, and systems
#178Concept for silicon carbide power devices
#179Method for producing IGBT with dV/dt controllability
#180ZENER DIODES AND METHODS OF MANUFACTURE
#181Power switching devices with high dV/dt capability and methods of making such devices
#182Asymmetric transistors and related devices and methods
#183Semiconductor device suppressing electric field concentration and method for manufacturing
#184SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
#185Nitride semiconductor substrate
#186Semiconductor device and method of manufacturing the same
#187Semiconductor device and method for manufacturing same
#188Silicon carbide semiconductor device integrating clamper circuit for clamping voltage
#189Semiconductor device and method for manufacturing the same
#190Semiconductor device with improved current flow distribution
#191Transistors with high concentration of germanium
#192Method of manufacturing a semiconductor device in which a lifetime of carriers is controlled
#193Method of manufacturing semiconductor device, and semiconductor device
#194Semiconductor device with needle-shaped field plate structures
#195Selective germanium P-contact metalization through trench
#196Methods and apparatuses including a boundary of a well beneath an active area of a tap
#197Transistors with various threshold voltages and method for manufacturing the same
#198Semiconductor component having a SiC semiconductor body and method for producing a semiconductor component
#199Semiconductor device
#200Semiconductor device
#201Semiconductor device
#202Stucture and method for SIC based protection device
#203Semiconductor device
#204Field plates on two opposed surfaces of double-base bidirectional bipolar transistor: devices, methods, and systems
#205High power performance gallium nitride high electron mobility transistor with ledges and field plates
#206Semiconductor device
#207Power semiconductor device having vertically parallel p-n layers formed in an active region under transistor cells and under a non-depletable extension zone formed in the edge region
#208High voltage semiconductor device
#209Semiconductor device
#210Semiconductor device
#211MOSFET and a method for manufacturing the same
#212High holding high voltage (HHHV) FET for ESD protection with modified source and method for producing the same
#213Silicon carbide semiconductor device
#214Semiconductor layer between source/drain regions and gate spacers
#215Semiconductor integrated circuit and method of manufacturing the same
#216Semiconductor device and method of manufacturing the same
#217Nanotube semiconductor devices
#218Variable thickness gate oxide transcap
#219Semiconductor device
#220Semiconductor structure, semiconductor assembly and power semiconductor device
#221Silicon carbide semiconductor component
#222Semiconductor device
#223Semiconductor device
#224Semiconductor device and power converter
#225Semiconductor device
#226Semiconductor device
#227Power transistor with terminal trenches in terminal resurf regions
#228Selective germanium P-contact metalization through trench
#229IGBT semiconductor device
#230Device having overlapping semiconductor fins oriented in different directions
#231Semiconductor device
#232Semiconductor device
#233Semiconductor device with a passivation layer and method for producing thereof
#234Channel strain inducing architecture and doping technique at replacement poly gate (RPG) stage
#235SIC SEMICONDUCTOR DEVICE HAVING PN JUNCTION INTERFACE AND METHOD FOR MANUFACTURING THE SIC SEMICONDUCTOR DEVICE
#236Semiconductor device with a well region
#237Silicon carbide epitaxial substrate and silicon carbide semiconductor device
#238Semiconductor device and method for manufacturing the same
#239High voltage power diode
#240Semiconductor device
#241Semiconductor device
#242Insulated-gate semiconductor device and method of manufacturing the same
#243Semiconductor device
#244Insulated gate bipolar transistor
#245P-type lateral double diffused MOS transistor and method of manufacturing the same
#246Semiconductor device and method for producing semiconductor device
#247Silicon carbide semiconductor device
#248Semiconductor device
#249Semiconductor device having semiconductor regions with an interval therebetween in a gate pad region
#250Silicon carbide semiconductor component with edge termination structure
#251Insulated gate bipolar transistor having first and second field stop zone portions and manufacturing method
#252Semiconductor device structure and method of manufacture
#253Method of manufacturing a semiconductor device comprising first and second field stop zone portions
#254Transient voltage suppressor
#255SRAM structure
#256Transistors with various threshold voltages and method for manufacturing the same
#257Transient voltage suppressor
#258Method and apparatus for power device with multiple doped regions
#259Semiconductor device with selectively etched surface passivation
#260Method of manufacturing a semiconductor device having an undulated profile of net doping in a drift zone
#261Method of manufacturing silicon carbide semiconductor device
#262Low substrate leakage Zener diode with modulated buried junction
#263Semiconductor device
#264Semiconductor device
#265Semiconductor device
#266High-voltage aluminum nitride (AIN) schottky-barrier diodes
#267Semiconductor device
#268Group III nitride semiconductor device with first and second conductive layers
#269Semiconductor device
#270SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME
#271System and method for edge termination of super-junction (SJ) devices
#272Semiconductor device and method of manufacturing the semiconductor device
#273Power semiconductor device and method of fabricating the same
#274Semiconductor device
#275Low substrate leakage zener diode with modulated buried junction
#276IGBT with dV/dt controllability
#277Method for producing IGBT with dV/dt controllability
#278Semiconductor device
#279POWER DEVICE AND METHOD FOR FABRICATING THE SAME
#280Charge compensation semiconductor devices
#281Semiconductor device having first and second electrode layers electrically disconnected from each other by a slit
#282Fast recovery inverse diode
#283Semiconductor devices and methods for forming a semiconductor device
#284Insulated gate semiconductor device having trench termination structure and method
#285Semiconductor device and method of manufacturing the same
#286Semiconductor device having a schottky barrier diode
#287SILICON CARBIDE SEMICONDUCTOR DEVICE
#288Field plates on two opposed surfaces of double-base bidirectional bipolar transistor: devices, methods, and systems
#289Semiconductor device
#290Power switching devices with DV/DT capability and methods of making such devices
#291SEMICONDUCTOR DEVICE
#292Semiconductor device, starter circuit, and switched-mode power-supply circuit
#293Zener diode with semiconductor region annularly surrounding anode
#294Semiconductor device
#295Epitaxial structure of trench MOSFET devices
#296Silicon carbide components and methods for producing silicon carbide components
#297Folded termination with internal field plate
#298RC-IGBT
#299High holding high voltage (HHHV) FET for ESD protection with modified source and method for producing the same
#300Array substrate, preparation method thereof, and display device