208218 ⎘
Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor; Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions Isolation within the component, i.e. internal isolation
Asymmetric field effect transistor cap layer
#302Semiconductor devices including patterns in a source region
#303Semiconductor device including a superlattice and replacement metal gate structure and related methods
#304Static random access memory and manufacturing method thereof
#305Semiconductor devices including field effect transistors and methods of forming the same
#306Active device and semiconductor device with the same
#307Methods of forming products with FinFET semiconductor devices without removing fins in certain areas of the product
#308Semiconductor device and method for manufacturing the same
#309Semiconductor device and method for fabricating the same
#310Segmented power transistor
#311High-voltage vertical power component
#312Method to define the active region of a transistor employing a group III-V semiconductor material
#313High-integration semiconductor device and method for fabricating the same
#314Charge pump system for reducing output ripple and peak current
#315Wing-type projection between neighboring access transistors in memory devices
#316Nonvolatile memory having memory array with differential cells
#317Non-volatile memory cell structure and non-volatile memory apparatus using the same
#318Nonvolatile memory cell with improved isolation structures
#319Two-transistor SRAM semiconductor structure and methods of fabrication
#320Semiconductor device and method for fabricating the same
#321Method for manufacturing lateral double-diffused metal oxide semiconductor transistor
#322Electronic device including an isolation structure
#323NON-VOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR MANUFACTURING SAME
#324SEMICONDUCTOR DEVICE
#325Semiconductor device
#326SEMICONDUCTOR MEMORY DEVICE
#327Semiconductor device with an isolation gate and method of forming
#328Auxiliary self-protecting transistor structure
#329Semiconductor structure
#330Semiconductor device and a method for manufacturing a semiconductor device
#331Fin-like field effect transistor (FinFET) device and method of manufacturing same
#332Semiconductor devices having high-resistance region and methods of forming the same
#333Methods of making a self-aligned channel drift device
#334Semiconductor device and method for manufacturing the same
#335Semiconductor devices and methods of forming the same
#336Semiconductor device
#337Method of forming an integrated multichannel device and single channel device structure
#338FIN FIELD EFFECT TRANSISTOR DEVICE AND FABRICATION METHOD THEREOF
#339Integrated circuit comprising at least an integrated antenna
#340Semiconductor device having control conductors
#341Semiconductor device and method for fabricating the same
#342Semiconductor device
#343Semiconductor devices
#344Semiconductor device and a manufacturing method thereof
#345Semiconductor devices and methods of fabricating the same
#346Pattern formation method that includes partially removing line and space pattern
#347SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR
#348Semiconductor devices having lower and upper fins and method for fabricating the same
#349Conversion of strain-inducing buffer to electrical insulator
#350Semiconductor device and manufacturing method thereof
#351Method for manufacturing a semiconductor device
#352Reliability in mergeable semiconductor devices
#353SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THE SAME
#354Semiconductor device
#355Shallow trench isolation regions made from crystalline oxides
#356Semiconductor devices having fin field effect transistor (FinFET) structures and manufacturing and design methods thereof
#357Semiconductor device and power circuit including a sense transistor for current sensing
#358Buried fin contact structures on FinFET semiconductor devices
#359Drain extended field effect transistors and methods of formation thereof
#360Semiconductor arrangements and methods of manufacturing the same
#361Multi-chip Package Module And A Doped Polysilicon Trench For Isolation And Connection
#362Semiconductor devices with dummy gate structures partially on isolation regions
#363Silicon carbide semiconductor device
#364Semiconductor devices including metal-silicon-nitride patterns
#365Integrated circuit device, safety circuit, safety-critical system and method of manufacturing an integrated circuit device
#366Semiconductor structure and manufacturing method thereof
#367Group III nitride integration with CMOS technology
#368Group III nitride integration with CMOS technology
#369Epitaxially grown stacked contact structure of semiconductor device
#370Semiconductor device and manufacturing method thereof
#371Method of manufacturing a high breakdown voltage III-nitride device
#372Nonvolatile memory device
#373Method of manufacturing fin diode structure
#374Method of manufacturing an embedded split-gate flash memory device
#375Electronic device and method for fabricating the same
#376Fin diode structure
#377Methods for probing semiconductor fins and determining carrier concentrations therein
#378Semiconductor device and inverter using same
#379Semiconductor device and method for forming the same
#380Dielectric liner for a self-aligned contact via structure
#381Metal gate structure of a CMOS semiconductor device
#382Dielectric liner for a self-aligned contact via structure
#383BURIED-CHANNEL FIELD-EFFECT TRANSISTORS
#384Semiconductor device
#385Semiconductor device, module and system each including the same, and method for manufacturing the semiconductor device
#386Simple and cost-free MTP structure
#387Barrier trench structure and methods of manufacture
#388Fin diode structure
#389Isolation device
#390Formation of a high aspect ratio trench in a semiconductor substrate and a bipolar semiconductor device having a high aspect ratio trench isolation region
#391Mechanisms for forming semiconductor device having isolation structure
#392Edge termination by ion implantation in gallium nitride
#393Semiconductor device and method of fabricating the same
#394High voltage lateral DMOS transistor with optimized source-side blocking capability
#395Semiconductor device having fin-type field effect transistor and method of manufacturing the same
#396Isolation device
#397Semiconductor device including a separation region formed around a first circuit region
#398Formation of a high aspect ratio trench in a semiconductor substrate and a bipolar semiconductor device having a high aspect ratio trench isolation region
#399High-voltage vertical power component
#400ENLARGED FIN TIP PROFILE FOR FINS OF A FIELD EFFECT TRANSISTOR (FINFET) DEVICE
#401SEMICONDUCTOR STRUCTURE INCLUDING METAL SILICIDE BUFFER LAYERS AND METHODS OF FABRICATING THE SAME
#402High voltage hybrid polymeric-ceramic dielectric capacitor
#403GaN device with reduced output capacitance and process for making same
#404Memory arrays
#405Contact structure of semiconductor device priority claim
#406Thermally oxidized heterogeneous composite substrate and method for manufacturing same
#407Field-effect transistor
#408TID hardened and single event transient single event latchup resistant MOS transistors and fabrication process
#409Segmented guard ring structures with electrically insulated gap structures and design structures thereof
#410Method and system for fabricating floating guard rings in GaN materials
#411Methods for forming semiconductor regions in trenches
#412Method and system for junction termination in GaN materials using conductivity modulation
#413SHALLOW TRENCH ISOLATION STRUCTURE AND METHOD OF MANUFACTURE
#414Inducing channel stress in semiconductor-on-insulator devices by base substrate oxidation
#415Method for manufacturing a semiconductor device
#416Isolated through silicon vias in RF technologies
#417Semiconductor device including an active region and two layers having different stress characteristics
#418Diode, semiconductor device, and MOSFET
#419High breakdown voltage III-nitride device
#420SEMICONDUCTOR DEVICE WITH ELECTRODE INCLUDING INTERVENTION FILM
#421Metal oxide semiconductor field effect transistor (MOSFET) gate termination
#422TID HARDENED MOS TRANSISTORS AND FABRICATION PROCESS
#423Buried channel field-effect transistors
#424Buried-channel field-effect transistors
#425Semiconductor device, module and system each including the same, and method for manufacturing the semiconductor device
#426Semiconductor devices having inactive fin field effect transistor (FinFET) structures and manufacturing and design methods thereof
#427High performance multi-finger strained silicon germanium channel PFET and method of fabrication
#428SOI STRUCTURES WITH REDUCED METAL CONTENT
#429Method and system for junction termination in GaN materials using conductivity modulation
#430Edge termination by ion implantation in GaN
#431Method and system for fabricating floating guard rings in GaN materials
#432Integrated circuit comprising at least an integrated antenna
#433Metal gate structure of a CMOS semiconductor device and method of forming the same
#434Barrier trench structure and methods of manufacture
#435Shallow-trench-isolation (STI)-bounded single-photon avalanche photodetectors
#436Drain extended field effect transistors and methods of formation thereof
#437Methods for reducing the metal content in the device layer of SOI structures and SOI structures produced by such methods
#438Fin-like field effect transistor (FinFET) device and method of manufacturing same
#439Method and apparatus for buried word line formation
#440Multi-chip package module and a doped polysilicon trench for isolation and connection
#441Bi-directional diode structure
#442Silicon carbide semiconductor device and method for manufacturing the same
#443Latch-up prevention structure and method for ultra-small high voltage tolerant cell
#444Memory arrays
#445Transistor
#446Transistor
#447Shallow-trench-isolation (STI)-bounded single-photon CMOS photodetector
#448Method of forming a bi-directional diode and structure therefor
#449Semiconductor apparatus
#450Semiconductor device
#451Semiconductor device
#452Memory devices with isolation structures
#453Structure incorporating latch-up resistant semiconductor device structures on hybrid substrates
#454Lateral compensation component
#455Semiconductor device including an active region and two layers having different stress characteristics
#456Lateral MOS transistor and method for manufacturing thereof
#457Silicide block isolated junction field effect transistor source, drain and gate
#458Integrated semiconductor cascode circuit for high-frequency applications
#459Semiconductor constructions
#460Elimination of low frequency oscillations in semiconductor circuitry
#461Transistor
#462Method of manufacturing a semiconductor component, and semiconductor component formed thereby
#463Integrated isolation capacitance structure
#464Bulk substrates with a self-aligned buried polycrystalline layer
#465Semiconductor device and method of fabricating the same
#466Enhanced-mode high electron mobility transistor and method for forming the same
#467Semiconductor device on hybrid substrate and method of manufacturing the same
#468Method for fabricating a shield gate trench MOSFET
#469Split-gate MOSFET
#470Germanium lateral bipolar transistor with silicon passivation
#471Junction formation with reduced Cfor 22NM FDSOI devices
#472Memristor using parallel asymmetrical transistors having shared floating gate and diode
#473FinFET structures and methods of forming the same
#474Field effect transistor contacts
#475Integrated circuit having strained fins on bulk substrate
#476High-voltage metal-oxide-semiconductor transistor device and manufacturing method thereof
#477Semiconductor-on-insulator (SOI) lateral heterojunction bipolar transistor having a wide band gap emitter/collector which are epitaxially grown
#478Fin field effect transistor (FinFET) device structure
#479Semiconductor structure and manufacturing method thereof
#480Source line formation in 3D vertical channel and memory
#481Semiconductor device with dynamic low voltage triggering mechanism
#482Semiconductor device and method for fabricating the same
#483Schottky diode having current leakage protection structure and current leakage protecting method of the same