208230 ⎘
Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor; Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions characterised by the particular shape of a junction between semiconductor regions
Semiconductor device having a lower diode region arranged below a trench
#302Silicon carbide semiconductor device
#303Incoherent type-III materials for charge carriers control devices
#304Semiconductor devices having super-junction trenches with conductive regions and method of making the same
#305Zener diode devices and related fabrication methods
#306Reducing leakage current in semiconductor devices
#307Source/drain profile for FinFET
#308Vertical MOS semiconductor device for high-frequency applications, and related manufacturing process
#309Base profile of self-aligned bipolar transistors for power amplifier applications
#310Silicon carbide semiconductor device
#311Semiconductor device and method for fabricating the same
#312Semiconductor device with peripheral breakdown protection
#313Compact memory structure including tunneling diode
#314Wide bandgap semiconductor device
#315SEMICONDUCTOR DEVICE
#316NON-PLANAR SEMICONDUCTOR DEVICE WITH P-N JUNCTION LOCATED IN SUBSTRATE
#317Imaging device
#318LDMOS transistor and method of forming the LDMOS transistor with improved Rds*Cgd
#319Group III-nitride-based enhancement mode transistor having a heterojunction fin structure
#320SEMICONDUCTOR MEMORY DEVICE
#321Semiconductor device having a field-effect structure and a nitrogen concentration profile
#322Semiconductor device and insulated gate bipolar transistor with barrier structure
#323Semiconductor device and method of manufacturing the semiconductor device
#324Semiconductor device, related manufacturing method, and related electronic device
#325Epitaxial structures
#326Group III nitride articles having nucleation layers, transitional layers, and bulk layers
#327Nitride semiconductor structure
#328Single electron transistor device
#329Selective nanoscale growth of lattice mismatched materials
#330Optoelectronic integrated circuit
#331Vertical tunnel field effect transistor (FET)
#332Fast recovery rectifier
#333Semiconductor Device and Method of Forming Shallow P-N Junction with Sealed Trench Termination
#334Methods for forming a self-aligned maskless junction butting for integrated circuits
#335Method of manufacturing semiconductor devices which allows reproducible thinning of a semiconductor body of the semiconductor devices
#336Semiconductor device and method of manufacturing semiconductor device
#337Controlled ion implantation into silicon carbide using channeling and devices fabricated using controlled ion implantation into silicon carbide using channeling
#338SEMICONDUCTOR DEVICE
#339Trench high electron mobility transistor device
#340Compensation devices
#341Substrate having hetero-structure, method for manufacturing the same and nitride semiconductor light emitting device using the same
#342POWER SEMICONDUCTOR DEVICE AND FABRICATING METHOD THEREOF
#343Stress relieving semiconductor layer
#344Method and apparatus for use in improving linearity of MOSFETs using an accumulated charge sink-harmonic wrinkle reduction
#345Semiconductor device
#346SiGe SRAM butted contact resistance improvement
#347Structure and method for defect passivation to reduce junction leakage for finFET device
#348Semiconductor device with a charge carrier compensation structure and method for the production of a semiconductor device
#349Semiconductor device and method of manufacturing the same
#350Low-resistivity p-type GaSb quantum wells
#351SEMICONDUCTOR DEVICE
#352Semiconductor device and method for fabricating the same
#353Power semiconductor device and method of manufacturing the same
#354Mechanisms for forming stressor regions in a semiconductor device
#355SEMICONDUCTOR DEVICES HAVING A POSITIVE-BEVEL TERMINATION OR A NEGATIVE-BEVEL TERMINATION AND THEIR MANUFACTURE
#356VERTICAL MEMORY CELL
#357Semiconductor device comprising a diode and a method for producing such a device
#358Semiconductor structures with thinned junctions and methods of manufacture
#359Planar electronic semiconductor device
#360Semiconductor devices and method of making the same
#361Method for producing a semiconductor device and field-effect semiconductor device
#362Nitride semiconductor device and method for manufacturing same
#363SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME
#364Active area shaping of III-nitride devices utilizing steps of source-side and drain-side field plates
#365Power semiconductor device
#366Optoelectronic integrated circuit
#367Semiconductor device and method of forming the same
#368Semiconductor substrate and method of fabricating the same
#369Vertical tunnel field effect transistor (FET)
#370SiGe SRAM butted contact resistance improvement
#371Semiconductor device and method of manufacturing the same
#372Source/drain profile for FinFET
#373High-voltage transistor, ESD-protection circuit, and use of a high-voltage transistor in an ESD-protection circuit
#374SEMICONDUCTOR DEVICE
#375Mechanisms for forming stressor regions in a semiconductor device
#376Bipolar junction transistor structure for reduced current crowding
#377Vertical gallium nitride Schottky diode
#378Power semiconductor diode, IGBT, and method for manufacturing thereof
#379Vertical memory cell
#380Nanotube semiconductor devices and nanotube termination structures
#381SEMICONDUCTOR DEVICE HAVING A SUPER JUNCTION STRUCTURE AND METHOD OF MANUFACTURING THE SAME
#382Semiconductor overlapped PN structure and manufacturing method thereof
#383Method and apparatus for use in improving linearity of MOSFETs using an accumulated charge sink-harmonic wrinkle reduction
#384Semiconductor device and manufacturing method of the same
#385PN junctions and methods
#386Defect reduction using aspect ratio trapping
#387Method of forming a semiconductor device termination and structure therefor
#388Semiconductor device with a wide-gap semiconductor layer on inner wall of trench
#389SEMICONDUCTOR PN JUNCTION STRUCTURE AND MANUFACTURING METHOD THEREOF
#390Semiconductor structures with thinned junctions and methods of manufacture
#391Semiconductor device and method for forming the same
#392Semiconductor device and manufacturing method of the same
#393Single crystal group III nitride articles and method of producing same by HVPE method incorporating a polycrystalline layer for yield enhancement
#394Double gate depletion mode MOSFET
#395Inclusion-free uniform semi-insulating group III nitride substrates and methods for making same
#396Single crystal group III nitride articles and method of producing same by HVPE method incorporating a polycrystalline layer for yield enhancement
#397Nanotube semiconductor devices
#398Semiconductor device and manufacturing method thereof
#399Semiconductor device and manufacturing method of the same
#400Method and system for object reconstruction
#401ELECTROSTATIC DISCHARGE PROTECTION DEVICE AND METHOD OF FABRICATING THE SAME
#402Semiconductor device with a charge carrier compensation structure and method for the production of a semiconductor device
#403Method for making group III nitride articles
#404Planar electronic semiconductor device
#405Metal oxide semiconductor (MOS) transistors with increased break down voltages and methods of making the same
#406Double gate depletion mode MOSFET
#407III-nitride power semiconductor device
#408Treatment method of semiconductor, method for manufacturing MOS, and MOS structure
#409Defect reduction using aspect ratio trapping
#410Modified transistor
#411Semiconductor device having a DMOS structure
#412Inclusion-free uniform semi-insulating group III nitride substrate and methods for making same
#413Low defect group III nitride films useful for electronic and optoelectronic devices and methods for making the same
#414Silicon carbide junction barrier schottky diode with wave-shaped regions
#415Semiconductor device comprising a PN junction diode
#416Method and structure for forming vertical transistors with various gate lengths
#417Diode string configured with guard ring silicon-controlled rectifier for negative electrostatic discharge protection
#418Transistor with asymmetric spacers
#419Field-effect transistor and method of making the same
#420RF communications device with conductive trace and related switching circuits and methods
#421Semiconductor device and method for fabricating the same
#422Source line formation in 3D vertical channel and memory
#423Semiconductor device with dynamic low voltage triggering mechanism
#424Semiconductor device having weak current channel
#425Group III-nitride-based enhancement mode transistor