208232 ⎘
Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor; Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions; Surface layout of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
Power semiconductor device and method of producing a power semiconductor device
#302SEMICONDUCTOR DEVICE
#303MULTI-FINGER RF nFET HAVING BURIED STRESSOR LAYER AND ISOLATION TRENCHES BETWEEN GATES
#304INSULATED GATE SEMICONDUCTOR DEVICE
#305THREE-DIMENSIONAL CARRIER STORED TRENCH IGBT AND MANUFACTURING METHOD THEREOF
#306SEMICONDUCTOR DEVICE
#307IGBT CHIP INTEGRATING TEMPERATURE SENSOR
#308Semiconductor device
#309SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD
#310Semiconductor device with multiple electrodes and an insulation film
#311SEMICONDUCTOR DEVICE
#312SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE MANUFACTURING METHOD, INVERTER CIRCUIT, DRIVE DEVICE, VEHICLE, AND ELEVATOR
#313Trench-gate power MOSFET with optimized layout
#314Semiconductor device
#315Silicon carbide MOS-gated semiconductor device
#316Semiconductor device
#317SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
#318Semiconductor Device and Method of Providing Rad Hard Power Transistor with 1200v Breakdown Voltage
#319SUPERJUNCTION SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SAME
#320Power semiconductor device and method for fabricating the same
#321Transistor Device and Method of Fabricating a Transistor Device
#322SiC MOSFET with transverse P+ region
#323SEMICONDUCTOR DEVICE AND METHOD OF PRODUCING THEREOF
#324Multi-trench Super-Junction IGBT Device
#325SCHOTTKY DIODE INTEGRATED INTO SUPERJUNCTION POWER MOSFETS
#326Semiconductor device and method of manufacturing the same
#327SEMICONDUCTOR DEVICE AND SEMICONDUCTOR CIRCUIT
#328SEMICONDUCTOR DEVICE
#329POWER SEMICONDUCTOR DEVICE
#330Cell structure of silicon carbide MOSFET device, and power semiconductor device
#331SILICON CARBIDE SEMICONDUCTOR DEVICE
#332SEMICONDUCTOR DEVICE
#333SEMICONDUCTOR DEVICE AND RELATED CHIP AND PREPARATION METHOD
#334Semiconductor device and method of manufacturing the same
#335SILICON CARBIDE SEMICONDUCTOR DEVICE
#336Power semiconductor device having low-k dielectric gaps between adjacent metal contacts
#337Silicon carbide MOSFET device and cell structure thereof
#338SEMICONDUCTOR DEVICE WITH DIODE CHAIN CONNECTED TO GATE METALLIZATION
#339SEMICONDUCTOR DEVICE INCLUDING PROTRUDING REGION
#340CELLULAR STRUCTURE OF SILICON CARBIDE MOSFET DEVICE, AND SILICON CARBIDE MOSFET DEVICE
#341Semiconductor device, and method for manufacturing semiconductor device
#342Semiconductor device
#343Insulated Gate Bipolar Transistor
#344Semiconductor device
#345Semiconductor device
#346INSULATED GATE BIPOLAR TRANSISTOR AND DIODE
#347SEMICONDUCTOR DEVICE
#348Semiconductor device and method for designing thereof
#349SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME
#350SEMICONDUCTOR DEVICE HAVING NEEDLE-SHAPED FIRST FIELD PLATE STRUCTURES AND NEEDLE-SHAPED SECOND FIELD PLATE STRUCTURES
#351Power semiconductor device
#352Cell structure and its related semiconductor device
#353SiC trench MOSFET with low on-resistance and switching loss
#354Different height cell subregions, semiconductor device having the same, and method of generating a layout diagram corresponding to the same
#355Semiconductor device having a semiconductor channel region and a semiconductor auxiliary region
#356Latch-up Free Lateral IGBT Device
#357SEMICONDUCTOR DEVICE
#358Wide band gap semiconductor device with surface insulating film
#359Semiconductor device and method for producing same
#360Semiconductor device
#361Semiconductor device and method for manufacturing same
#362TRANSISTOR DEVICE HAVING CHARGE COMPENSATING FIELD PLATES IN-LINE WITH BODY CONTACTS
#363Silicon carbide MOSFET with optional asymmetric gate clamp
#364SEMICONDUCTOR DEVICE
#365SEMICONDUCTOR DEVICE
#366Semiconductor device and method for controlling semiconductor device
#367Reverse conducting IGBT with controlled anode injection
#368IGBT WITH A VARIATION OF TRENCH OXIDE THICKNESS REGIONS
#369Cell Design for MOS-controlled Power Semiconductor Device
#370Power transistor cell and power transistor having field shielding contacting areas connecting field shielding areas to metal areas
#371SEMICONDUCTOR DEVICE
#372Semiconductor device
#373Semiconductor device
#374Drain and/or gate interconnect and finger structure
#375Semiconductor device
#376Semiconductor device with surface and deep guard rings
#377Semiconductor device
#378Semiconductor device
#379Connection arrangements for integrated lateral diffusion field effect transistors having a backside contact
#380Superjunction semiconductor device having reduced source area
#381Enhancement on-state power semiconductor device characteristics utilizing new cell geometries
#382Semiconductor device and method for manufacturing the same
#383Semiconductor device, power conversion device and method of manufacturing semiconductor device
#384METHOD FOR MANUFACTURING A POWER TRANSISTOR, AND POWER TRANSISTOR
#385Power semiconductor device having a control cell for controlling a load current
#386TRANSISTOR CELL INCLUDING AN IMPLANTED EXPANSION REGION
#387VERTICAL TRENCH GATE FET WITH SPLIT GATE
#388IGBT with anti-parallelly connected FWD on a common substrate
#389Semiconductor device
#390Semiconductor device and fabrication method of semiconductor device having improved breaking withstand capability
#391SEMICONDUCTOR DEVICE
#392Semiconductor device, inverter circuit, drive device, vehicle, and elevator
#393Alignment-tolerant gallium oxide device
#394FinFET devices with dummy fins having multiple dielectric layers
#395Semiconductor device
#396Reverse conducting insulated gate power semiconductor device having low conduction losses
#397Semiconductor device
#398Semiconductor device with integrated current sensor
#399Fin-based laterally-diffused metal-oxide semiconductor field effect transistor
#400MOSFET device of silicon carbide having an integrated diode and manufacturing process thereof
#401Semiconductor power device and method for producing same
#402SEMICONDUCTOR DEVICE
#403Metal-oxide semiconductor (MOS) capacitor (MOSCAP) circuits and MOS device array bulk tie cells for increasing MOS device array density
#404Semiconductor device and method of manufacturing semiconductor device
#405Semiconductor device and method of manufacturing semiconductor device
#406Semiconductor device and method for manufacturing the same
#407Semiconductor device with voltage resistant structure
#408Semiconductor device and methods of manufacturing same
#409Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device
#410Semiconductor device
#411Reverse conducting semiconductor device and method for manufacturing reverse conducting semiconductor device
#412Power amplifier modules with flip-chip and non-flip-chip power transistor dies
#413Transistor with flip-chip topology and power amplifier containing same
#414FIELD ELECTRODE TERMINATION STRUCTURE FOR TRENCH-BASED TRANSISTOR DEVICES
#415SEMICONDUCTOR DEVICE
#416MOS-based power semiconductor device having increased current carrying area and method of fabricating same
#417Semiconductor device
#418Fill pattern for power transistor and diode devices
#419HIGH-POWER FIELD-EFFECT TRANSISTOR (FET)
#420Semiconductor device
#421SEMICONDUCTOR DEVICE
#422RC IGBT, Method of Producing an RC IGBT and Method of Controlling a Half Bridge Circuit
#423Semiconductor device with field plate electrode
#424Method of increasing forward biased safe operating area using different threshold voltage segments
#425Semiconductor device and method for manufacturing the same
#426SiC semiconductor device with current sensing capability
#427Semiconductor device
#428Semiconductor device
#429Silicon carbide semiconductor device, power conversion device, three-phase motor system, automobile, and railway vehicle
#430Semiconductor device including first gate electrode and second gate electrode
#431Semiconductor device
#432Power Semiconductor Device Having Nanometer-Scale Structure
#433Trench gate trench field plate vertical MOSFET
#434SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
#435Transistor component having gate electrodes and field electrodes
#436FinFET with shorter fin height in drain region than source region and related method
#437Insulated gate power device with independently controlled segments
#438Manufacturing method of semiconductor device including semiconductor element of inversion type
#439Semiconductor device including a plurality of trenches
#440Insulated trench gates with multiple layers for improved performance of semiconductor devices
#441Shield gate trench power device and method for making the same
#442VFET standard cell architecture with improved contact and super via
#443Semiconductor device
#444Integrated MOS transistor with selective disabling of cells thereof
#445Semiconductor device
#446Method of manufacturing silicon carbide semiconductor devices
#447BYPASSED GATE TRANSISTORS HAVING IMPROVED STABILITY
#448Insulated-gate semiconductor device
#449Semiconductor device
#450Semiconductor device
#451Semiconductor device
#452Silicon carbide semiconductor device with cell section and outer periphery section
#453Semiconductor device having a super junction structure and method of manufacturing the same
#454SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
#455SILICIDE-BLOCK-RING BODY LAYOUT FOR NON-INTEGRATED BODY LDMOS AND LDMOS-BASED LATERAL IGBT
#456Semiconductor device and method for manufacturing semiconductor device
#457Silicon carbide semiconductor device
#458Semiconductor device
#459High voltage metal-oxide-semiconductor (HVMOS) device integrated with a high voltage junction termination (HVJT) device
#460Semiconductor device including sense insulated-gate bipolar transistor
#461Semiconductor device
#462Semiconductor device and system
#463Semiconductor device
#464Semiconductor device
#465Semiconductor device and manufacturing method
#466Semiconductor device
#467Multi-trench Schottky diode
#468SEMICONDUCTOR DEVICE
#469Method for producing a superjunction device
#470Superjunction transistor device and method for forming a superjunction transistor device
#471Semiconductor device
#472Semiconductor device and method of manufacturing the same
#473SCALABLE CIRCUIT-UNDER-PAD DEVICE TOPOLOGIES FOR LATERAL GaN POWER TRANSISTORS
#474Semiconductor device
#475Power semiconductor device and power semiconductor chip
#476Semiconductor device
#477Semiconductor arrangement and method of making
#478Semiconductor device
#479Semiconductor device and method for manufacturing the same
#480Semiconductor device
#481Monolithic charge coupled field effect rectifier embedded in a charge coupled field effect transistor
#482Semiconductor device
#483Ruggedized symmetrically bidirectional bipolar power transistor
#484Power semiconductor switch having a cross-trench structure
#485Semiconductor device, and method for manufacturing semiconductor device
#486SILLICON CARBIDE POWER MOSFET WITH ENHANCED BODY DIODE
#487SiC semiconductor device
#488Silicon carbide semiconductor device
#489RC IGBT
#490Semiconductor device and semiconductor circuit
#491SiC semiconductor device
#492Semiconductor device
#493Semiconductor device
#494Semiconductor device
#495Semiconductor device and method of manufacturing the same
#496Method of manufacturing a power semiconductor device having source region and body contact region formed between trench-type gate electrodes
#497Semiconductor device
#498Double height cell regions, semiconductor device having the same, and method of generating a layout diagram corresponding to the same
#499Semiconductor device
#500Semiconductor device
#501Trench MOSFET and method of manufacturing trench MOSFET
#502Split trench gate super junction power device
#503Semiconductor device
#504Semiconductor device and manufacturing method of 1HE same
#505Method of manufacturing semiconductor device
#506Silicon carbide semiconductor device
#507Semiconductor device
#508Method for forming super-junction corner and termination structure with graded sidewalls
#509Transistor device and method of fabricating a gate of a transistor device
#510Semiconductor device
#511Device having increased forward biased safe operating area using source segments with different threshold voltages and method of operating thereof
#512Semiconductor integrated circuit device
#513Semiconductor device
#514Silicon carbide semiconductor device having a conductive layer formed above a bottom surface of a well region so as not to be in ohmic connection with the well region and power converter including the same
#515Vertical nitride semiconductor transistor device
#516Power switch arrangement
#517Methods of manufacture of termination for vertical trench shielded devices
#518Power semiconductor device with dV/dt controllability and low gate charge
#519Semiconductor device
#520Insulated gate bipolar transistor and diode
#521Semiconductor device including first and second dummy trench gates
#522MOSFET WITH INTEGRATED ESD PROTECTION DIODE HAVING ANODE ELECTRODE CONNECTION TO TRENCHED GATES FOR INCREASING SWITCH SPEED
#523Wide bandgap semiconductor device with sensor element
#524Semiconductor devices having unit cell transistors with smoothed turn-on behavior and improved linearity
#525Laterally diffused metal oxide semiconductor with gate poly contact within source window
#526Silicon carbide semiconductor device
#527Semiconductor device
#528Semiconductor device
#529Semiconductor device
#530Series resistor over drain region in high voltage device
#531Integrated circuit device structures and double-sided electrical testing
#532Method of manufacturing a silicon carbide semiconductor device with trench gate structure and vertical pn junction between body region and drift structure
#533Semiconductor device and method of manufacturing semiconductor device
#534Semiconductor device
#535Semiconductor component having a diode structure in a SiC semiconductor body
#536Semiconductor device and method of manufacturing the same
#537Transistor cell for integrated circuits and method to form same
#538Power MOSFET device having improved safe-operating area and on resistance, manufacturing process thereof and operating method thereof
#539Semiconductor device
#540Semiconductor device and power converter
#541SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THEREOF
#542Semiconductor device including a transistor with one or more barrier regions
#543Semiconductor device with separate active region and method of fabricating the same
#544Semiconductor device
#545Transistor devices with termination regions
#546Semiconductor die, semiconductor device and IGBT module
#547Transistor device
#548Narrow semiconductor mesa device
#549Semiconductor device
#550Semiconductor device
#551Semiconductor device having an alignment layer with mask pits
#552Power semiconductor devices having gate trenches and buried edge terminations and related methods
#553Semiconductor device
#554Semiconductor device and semiconductor circuit
#555Semiconductor device having improved carrier mobility
#556Semiconductor device
#557Semiconductor device
#558Transistor arrangement with a load transistor and a sense transistor
#559Semiconductor device
#560Trench field electrode termination structure for transistor devices
#561Semiconductor device
#562Semiconductor device, comprising an insulated gate field effect transistor connected in series with a field effect transistor
#563Method of increasing forward biased safe operating area using different threshold voltage segments
#564Diode with structured barrier region
#565Semiconductor device with insulated-gate bipolar transistor region and diode region
#566Semiconductor device
#567Semiconductor device
#568Semiconductor device
#569Semiconductor device
#570Semiconductor device having a transistor cell region and a termination region with needle-shaped field plate structures
#571Bipolar semiconductor device and method for manufacturing such a semiconductor device
#572Semiconductor device
#573Semiconductor device and inverter
#574Carrier storage enhanced superjunction IGBT
#575Method of processing a power semiconductor device
#576Semiconductor device
#577Integrated circuit layout cell, integrated circuit layout arrangement, and methods of forming the same
#578Power device with carrier lifetime zone
#579IGBT with dV/dt controllability
#580Termination for vertical trench shielded devices
#581Semiconductor device and method for producing same
#582Tiled lateral BJT
#583Semiconductor power device and method for producing same
#584Power semiconductor device and method
#585Cell layouts for MOS-gated devices for improved forward voltage
#586IGBT chip having mixed gate structure
#587Shielded gate trench MOSFETs with floating trenched gates and channel stop trenched gates in termination
#588Schottky diode integrated into superjunction power MOSFETs
#589Half-bridge circuit including integrated level shifter transistor
#590IGBT chip having folded composite gate structure
#591Silicon carbide semiconductor device
#592Semiconductor device
#593Source contact formation of MOSFET with gate shield buffer for pitch reduction
#594Semiconductor device
#595Semiconductor device
#596Nitride semiconductor device
#597Semiconductor device with voltage resistant structure
#598Semiconductor device
#599Method of manufacturing semiconductor device
#600Semiconductor device