208232 ⎘
Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor; Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions; Surface layout of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
Semiconductor device and method of manufacturing the same
#602Method of processing a power semiconductor device
#603Non-punch-through reverse-conducting power semiconductor device and method for producing same
#604Semiconductor device
#605Semiconductor device with surface insulating film
#606Semiconductor device
#607Trench gate trench field plate vertical MOSFET
#608Semiconductor device including emitter regions and method of manufacturing the semiconductor device
#609Drain and/or gate interconnect and finger structure
#610Semiconductor device with drain structure and metal drain electrode
#611Semiconductor device and method of manufacturing the same
#612Integrated channel diode
#613Semiconductor device
#614Semiconductor device
#615Power semiconductor devices having reflowed inter-metal dielectric layers
#616Transistors having reduced parasitics and enhanced performance
#617Semiconductor device having a main transistor, a sense transistor and at least one bypass diode structure
#618Methods of manufacture for trench-gate insulated-gate bipolar transistors (IGBTs)
#619Superjunction device with oxygen inserted Si-layers
#620Semiconductor device
#621Semiconductor device
#622Process of Forming an Electronic Device Including a Junction Field-Effect Transistor Having a Gate Within a Well Region
#623Method of operating a semiconductor device having a desaturation channel structure
#624SRAM structure
#625Cell bridging technique
#626Semiconductor device having an edge termination area with trench electrodes at different electric potentials, and method for manufacturing thereof
#627Silicon carbide semiconductor device
#628Semiconductor device
#629Semiconductor device
#630Bypassed gate transistors having improved stability
#631SEMICONDUCTOR DEVICE HAVING A GATE INSULATING FILM HAVING A HIGH DIELECTRIC CONSTANT PORTION FOR RELAXING AN ELECTRIC FIELD GENERATED IN THE GATE INSULATING FILM
#632Semiconductor device exhibiting soft recovery characteristics
#633Semiconductor device and semiconductor circuit
#634PROCESS METHOD AND STRUCTURE FOR HIGH VOLTAGE MOSFETS
#635Semiconductor device, inverter circuit, driving device, vehicle, and elevator
#636Silicon carbide semiconductor device and power converter
#637Manufacture of improved power devices
#638VFET standard cell architecture with improved contact and super via
#639Semiconductor device
#640SiC semiconductor device with current sensing capability
#641Method of manufacturing semiconductor device and semiconductor device
#642Hetero-epitaxial output device array with serial connections
#643Device with increased forward biased safe operating area (FBSOA) through using source segments having different threshold voltages
#644Semiconductor integrated circuit device
#645Semiconductor device
#646Insulated-gate semiconductor device and method of manufacturing the same
#647SWITCHING ELEMENT AND METHOD OF MANUFACTURING THE SAME
#648Semiconductor device and semiconductor package
#649Semiconductor device with equipotential ring electrode
#650SEMICONDUCTOR DEVICE
#651Semiconductor device
#652Power semiconductor device
#653Semiconductor device and manufacturing method therefor
#654Electric field shielding in silicon carbide metal-oxide-semiconductor (MOS) device cells using body region extensions
#655Semiconductor power device
#656Semiconductor device
#657Electrostatic discharge (ESD) robust transistor
#658Semiconductor device
#659Power module and motor drive circuit
#660Semiconductor device having termination region with insulator films having different coefficients of moisture absorption
#661Insulated gate bipolar transistor and diode
#662Semiconductor device having overload current carrying capability
#663Silicon controlled rectifier and manufacturing method therefor
#664Electronic device including a transistor having structures with different characteristics
#665Method for producing a superjunction device
#666Method for producing IGBT with dV/dt controllability
#667Insulated-gate semiconductor device and method of manufacturing the same
#668Vertically-integrated two-dimensional (2D) semiconductor slabs in complementary field effect transistor (CFET) cell circuits, and method of fabricating
#669Semiconductor device and manufacturing process therefor
#670Semiconductor device
#671Semiconductor Device with Stripe-Shaped Cell Trench Structures and Recessed Contacts and Method of Manufacturing Thereof
#672Semiconductor device including saturation current suppression layer
#673IGBT device
#674Cell architecture based on multi-gate vertical field effect transistor
#675Power switching devices with high dV/dt capability and methods of making such devices
#676Insulated gate bipolar transistor device and method for manufacturing the same
#677Semiconductor device and method of manufacturing the same
#678Semiconductor device and method for manufacturing same
#679Power MOSFET device
#680Semiconductor device
#681SUPER JUNCTION MOS BIPOLAR TRANSISTOR AND PROCESS OF MANUFACTURE
#682Ppower semiconductor device with anticorrosive edge termination structure
#683Semiconductor device with surge current protection
#684High voltage devices and methods of forming the same
#685Semiconductor device using regions between pads
#686Normally-off nitride semiconductor transistor device
#687Semiconductor device and method of manufacturing the same
#688Semiconductor device
#689Controlled resistance integrated snubber for power switching device
#690Semiconductor device and method of manufacturing the same
#691Standard cell architecture for gate tie-off
#692Standard cell architecture for gate tie-off
#693CELLULAR STRUCTURE OF SILICON CARBIDE UMOSFET DEVICE HAVING SURGE VOLTAGE SELF-SUPPRESSION AND SELF-OVERVOLTAGE PROTECTION CAPABILITIES
#694Method for forming a superjunction transistor device
#695MOSFET device of silicon carbide having an integrated diode and manufacturing process thereof
#696SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
#697Semiconductor device
#698Circuits employing asymmetric diffusion breaks in different type semiconductor diffusion regions, and related fabrication methods
#699Semiconductor device
#700Semiconductor device and method for manufacturing the same
#701Super-junction corner and termination structure with graded sidewalls
#702Semiconductor device with improved current flow distribution
#703Semiconductor power device and method for producing same
#704Method of manufacturing silicon carbide semiconductor devices
#705Semiconductor device with superjunction and oxygen inserted Si-layers
#706Non-volatile memory
#707Transistor with integrated capacitor
#708Semiconductor device including an integrated resistor and method of producing thereof
#709Lateral MOSFET with buried drain extension layer
#710Semiconductor device with surface insulating film
#711Semiconductor device having a silicon oxide film with a gradual downward inclination and method of manufacturing semiconductor device
#712Three-dimensional (3D), vertically-integrated field-effect transistors (FETs) for complementary metal-oxide semiconductor (CMOS) cell circuits
#713Connection arrangements for integrated lateral diffusion field effect transistors having a backside contact
#714Semiconductor structure
#715Preliminary trenches formed in kerf regions for die singulation
#716Semiconductor device
#717Semiconductor device with needle-shaped field plate structures
#718Trench semiconductor device layout configurations
#719Semiconductor device having a super junction structure and method of manufacturing the same
#720Semiconductor device with voltage resistant structure
#721FinFET devices with dummy fins having multiple dielectric layers
#722Semiconductor device and method of forming the same
#723SEMICONDUCTOR DEVICE
#724Amplifier
#725Semiconductor device
#726MOS-based power semiconductor device having increased current carrying area and method of fabricating same
#727Cellular insulated gate power device with edge design to prevent failure near edge
#728Semiconductor device
#729Insulated gate bipolar transistor device, manufacturing method for semiconductor device, and manufacturing method for insulated gate bipolar transistor device
#730Semiconductor device including trench gate structure and manufacturing method
#731NARROW-MESA SUPER-JUNCTION MOSFET
#732Multiple gated power MOSFET device
#733Semiconductor device with a LOCOS trench
#734INSULATED GATE BIPOLAR TRANSISTOR
#735Semiconductor device and method of manufacturing the same
#736Scalable circuit-under-pad device topologies for lateral GaN power transistors
#737Semiconductor device
#738Driving method and drive circuit for semiconductor device
#739Fabrication methods of insulated gate bipolar transistors
#740Semiconductor device with an IGBT region and a non-switchable diode region
#741Method of manufacturing semiconductor device and semiconductor device
#742Ultra high voltage semiconductor device with electrostatic discharge capabilities
#743Semiconductor device and method of manufacturing the same
#744Power semiconductor device with self-aligned source region
#745Power semiconductor device
#746SEMICONDUCTOR DEVICE AND METHOD OF OPERATION
#747Source contact formation of MOSFET with gate shield buffer for pitch reduction
#748Insulated-gate semiconductor device and method of manufacturing the same
#749Semiconductor device
#750Semiconductor device with diode region
#751Semiconductor device, method of manufacturing semiconductor device, power conversion device
#752Gate Contact Structure for a Semiconductor Device
#753Semiconductor device including sense insulated-gate bipolar transistor
#754Semiconductor device comprising a gradually increasing field dielectric layer and method of manufacturing a semiconductor device
#755High power transistor with interior-fed gate fingers
#756High voltage metal-oxide-semiconductor (HVMOS) device integrated with a high voltage junction termination (HVJT) device
#757Series resistor over drain region in high voltage device
#758Semiconductor device
#759Lateral DMOS device with dummy gate
#760Semiconductor device
#761Integrated circuit structures
#762Gate-all-around fin device
#763Semiconductor power device and manufacturing method thereof
#764Series resistor over drain region in high voltage device
#765SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
#766Power MOSFET with an integrated pseudo-Schottky diode in source contact trench
#767Wide bandgap semiconductor device
#768Drain and/or gate interconnect and finger structure
#769Protection of drain extended transistor field oxide
#770IGBT having a barrier region
#771Wide bandgap semiconductor device including transistor cells and compensation structure
#772MOSFET Having Drain Region Formed Between Two Gate Electrodes with Body Contact Region and Source Region Formed in a Double Well Region
#773Semiconductor devices and methods for forming semiconductor devices
#774Double height cell regions, semiconductor device having the same, and method of generating a layout diagram corresponding to the same
#775Method of manufacturing a semiconductor device
#776Power semiconductor device and manufacturing method thereof
#777Silicon carbide semiconductor device
#778Semiconductor device
#779Power transistor device including first and second transistor cells having different on-resistances for improved thermal stability
#780Silicon carbide semiconductor device and manufacturing method therefor
#781Power module and reverse-conducting IGBT
#782Cell architecture based on multi-gate vertical field effect transistor
#783Silicon carbide semiconductor device and manufacturing method therefor
#784Power electronic arrangement
#785Semiconductor device
#786Semiconductor device
#787Silicon carbide semiconductor device having a conductive layer formed above a bottom surface of a well region so as not to be in ohmic connection with the well region and power converter including the same
#788Power silicon carbide based MOSFET transistors with improved short circuit capabilities and methods of making such devices
#789Semiconductor device and method for manufacturing semiconductor device
#790Semiconductor device with different gate trenches
#791Silicon carbide insulated-gate power field effect transistor
#792Semiconductor device having a carrier trapping region including crystal defects
#793Power semiconductor device having different channel regions
#794LDMOS transistor and method
#795Silicon carbide semiconductor device
#796SEMICONDUCTOR DEVICE INCLUDING DEVICE ISOLATION LAYER
#797Semiconductor device
#798Combined gate trench and contact etch process and related structure
#799Semiconductor device with well region and protection region electrically connected by connection region
#800Silicon carbide semiconductor device
#801SEMICONDUCTOR DEVICE
#802Semiconductor device and manufacturing method of semiconductor device
#803Silicon carbide semiconductor device
#804SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
#805Transistor Component
#806Nanotube semiconductor devices
#807Semiconductor device
#808Gate-all-around fin device
#809Method of producing semiconductor device
#810Gallium nitride transistor with improved termination structure
#811Transistor structure with depletion-mode and enhancement mode-devices
#812FinFET devices with dummy fins having multiple dielectric layers
#813Electronic circuit with a transistor device and a clamping circuit
#814Gate-all-around fin device
#815Gate-all-around fin device
#816Transistor device with gate resistor
#817Power semiconductor device having trench electrodes biased at three different electrical potentials, and method of manufacturing the same
#818Latch-up resistant transistor device
#819SEMICONDUCTOR DEVICE COMPRISING 3D CHANNEL REGION AND METHOD OF MANUFACTURING THE SAME
#820Tiled lateral BJT
#821Avalanche robust LDMOS
#822Semiconductor device
#823Enhancements to cell layout and fabrication techniques for MOS-gated devices
#824Semiconductor device
#825Semiconductor device having termination region with insulator having low coefficient of moisture absorption
#826Semiconductor device
#827Needle cell trench MOSFET
#828Super-junction corner and termination structure with improved breakdown and robustness
#829Power semiconductor device with dV/dt controllability and low gate charge
#830Power transistor with dV/dt controllability and tapered mesas
#831Bulk CMOS devices with enhanced performance and methods of forming the same utilizing bulk CMOS process
#832SEMICONDUCTOR DEVICE
#833Semiconductor device
#834Semiconductor device
#835Power semiconductor transistor
#836Semiconductor device
#837Semiconductor device and manufacturing method to manufacture semiconductor device
#838Semiconductor device with separation regions
#839N-channel bipolar power semiconductor device with P-layer in the drift volume
#840Semiconductor device, power module, and power conversion device
#841Silicon carbide semiconductor device, and manufacturing method of the same
#842Insulated-gate semiconductor device
#843SEMICONDUCTOR DEVICE
#844Semiconductor device with transistor portion having low injection region on the bottom of a substrate
#845Method for forming complementary doped semiconductor regions in a semiconductor body
#846Transistor cell
#847Self-aligned trench MOSFET structures and methods
#848Semiconductor device and manufacturing method of semiconductor device
#849Power semiconductor device having a cross-trench arrangement
#850Transistor device with gate resistor
#851Power semiconductor device having fully depleted channel regions
#852Silicon carbide semiconductor device
#853Silicon carbide semiconductor component
#854Semiconductor apparatus
#855Semiconductor device
#856Semiconductor device
#857IGBT semiconductor device
#858Semiconductor device and manufacturing method of semiconductor device
#859Integrated circuit having a transistor, a diode, and a temperature sensor
#860Method of manufacturing a silicon carbide semiconductor device
#861Semiconductor device
#862Semiconductor device
#863Semiconductor device
#864Lateral double diffused MOS transistor
#865Semiconductor device with stripe-shaped trench gate structures, transistor mesas and diode mesas
#866Silicon carbide semiconductor device
#867Silicon carbide semiconductor element and method for manufacturing same
#868Semiconductor device having a varying length conductive portion between semiconductor regions
#869Silicon carbide semiconductor device
#870Dual device semiconductor structures with shared drain
#871Semiconductor device
#872Standard cell architecture for gate tie-off
#873Semiconductor device
#874Transistor arrangement with a load transistor and a sense transistor
#875Semiconductor device
#876Semiconductor device and method for manufacturing the same
#877Semiconductor device
#878Semiconductor device
#879Power semiconductor device with dV/dt controllability
#880Semiconductor device with extended electrically-safe operating area
#881Method for manufacturing a vertical semiconductor device
#882Semiconductor device and method of forming including superjunction structure formed using angled implant process
#883SGT superjunction MOSFET structure
#884Semiconductor device with deep diffusion region
#885Method of operating a semiconductor device having a desaturation channel structure and related methods of manufacture
#886Hetero-epitaxial output device array
#887Power semiconductor device having an SOI island
#888Superjunction transistor arrangement and method of producing thereof
#889Transistor structure and semiconductor layout structure
#890Trench gate semiconductor device with dummy gate electrode and manufacturing method of the same
#891Schottky diode integrated into superjunction power MOSFETs
#892IGBT with fully depletable n- and p-channel regions
#893Semiconductor device comprising a barrier region
#894Semiconductor device
#895Semiconductor device with planar field effect transistor cell
#896Semiconductor device
#897Insulated-gate semiconductor device and method of manufacturing the same
#898Semiconductor device and manufacturing method therefor
#899Semiconductor device having an insulated gate bipolar transistor and method of manufacturing the same
#900Insulated gate bipolar transistor