208232 ⎘
Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor; Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions; Surface layout of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
Semiconductor device and semiconductor element
#2402Method of fabricating semiconductor device
#2403Resurf structure and LDMOS device
#2404Semiconductor structure and manufacturing method for the same
#2405Semiconductor device for use in a power supply circuit and having a power MOSFET and Schottky barrier diode
#2406Gate pullback at ends of high-voltage vertical transistor structure
#2407Integrating Schottky diode into power MOSFET
#2408Field effect transistor devices with low source resistance
#2409Field effect transistor devices with low source resistance
#2410Trench type semiconductor device and fabrication method for the same
#2411Superjunction structures for power devices and methods of manufacture
#2412Superjunction Structures for Power Devices and Methods of Manufacture
#2413Superjunction structures for power devices and methods of manufacture
#2414Superjunction structures for power devices and methods of manufacture
#2415Superjunction structures for power devices and methods of manufacture
#2416High voltage metal oxide semiconductor device having a multi-segment isolation structure
#2417Power semiconductor structure with schottky diode
#2418Semiconductor switch device
#2419Transistor arrangement with a MOSFET
#2420Semiconductor device
#2421SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
#2422DMOS transistor with a slanted super junction drift structure
#2423Power LDMOS device and high voltage device
#2424Semiconductor device and method for fabricating the same
#2425Trench MOSFET with trenched floating gates and trenched channel stop gates in termination
#2426Power semiconductor device and methods for fabricating the same
#2427SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
#2428Semiconductor device
#2429Semiconductor device
#2430Semiconductor device
#2431Semiconductor device and manufacturing method of the same
#2432Semiconductor device and manufacturing method of the same
#2433Semiconductor device
#2434Power semiconductor device
#2435High voltage semiconductor device and driving circuit
#2436Semiconductor device including a power MISFET
#2437SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
#2438Methods for fabricating transistors including one or more circular trenches
#2439SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME
#2440Monolithic low impedance dual gate current sense MOSFET
#2441High voltage device and manufacturing method thereof
#2442Semiconductor device
#2443Methods related to power semiconductor devices with thick bottom oxide layers
#2444Super-junction semiconductor device
#2445Trench MOSFET with trenched floating gates in termination
#2446Field effect transistor, semiconductor switch circuit, and communication apparatus
#2447Semiconductor device and process for production thereof
#2448Power semiconductor device
#2449Power amplifier
#2450Semiconductor device and method for manufacturing the same
#2451Silicon carbide semiconductor device and method of manufacturing thereof
#2452SEMICONDUCTOR DEVICE
#2453Trench MOSFET with ultra high cell density and manufacture thereof
#2454Trench-based power semiconductor devices with increased breakdown voltage characteristics
#2455Semiconductor device and method of manufacturing the same
#2456MOS transistor and fabrication method of semiconductor integrated circuit device
#2457Semiconductor device and manufacturing method thereof
#2458Double diffused metal oxide semiconductor device and manufacturing method thereof
#2459Vertical trench LDMOS transistor
#2460Edge termination with improved breakdown voltage
#2461HV interconnection solution using floating conductors
#2462Semiconductor device and a reverse conducting IGBT
#2463Method for forming accumulation-mode field effect transistor with improved current capability
#2464CO-PACKAGING APPROACH FOR POWER CONVERTERS BASED ON PLANAR DEVICES, STRUCTURE AND METHOD
#2465Semiconductor devices and power conversion systems
#2466Semiconductor component and method of making the same
#2467Trenched Schottky diode and method of forming a trenched Schottky diode
#2468Semiconductor device arrangement with a first semiconductor device and with a plurality of second semiconductor devices
#2469Transistor arrangement with a first transistor and with a plurality of second transistors
#2470Single die output power stage using trench-gate low-side and LDMOS high-side MOSFETS, structure and method
#2471Semiconductor device, method of manufacturing the same, and power module
#2472Semiconductor pillar power MOS
#2473Semiconductor power device having a super-junction structure
#2474Semiconductor device incorporating charge balancing
#2475Integrated MOSFET devices with Schottky diodes and associated methods of manufacturing
#2476Semiconductor component with a space saving edge structure
#2477Semiconductor Power Device Having A Top-side Drain Using A Sinker Trench
#2478SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
#2479High voltage semiconductor device
#2480Insulated gate semiconductor device
#2481Insulated gate type semiconductor device and method for fabricating the same
#2482High side gate driver device
#2483Insulated gate type semiconductor device and method for fabricating the same
#2484Manufacturing method of semiconductor apparatus and semiconductor apparatus
#2485Transistor power switch device and method of measuring its characteristics
#2486Lateral power diode with self-biasing electrode
#2487Semiconductor component with high breakthrough tension and low forward resistance
#2488Semiconductor device
#2489Semiconductor device and method of manufacturing semiconductor device
#2490SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME
#2491Semiconductor device
#2492Semiconductor device having a split gate and a super-junction structure
#2493Semiconductor device
#2494Semiconductor apparatus
#2495Semiconductor device
#2496Semiconductor device and method of manufacturing the same
#2497SEMICONDUCTOR DEVICE WITH LATERAL ELEMENT
#2498Semiconductor device
#2499SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
#2500Semiconductor device with superjunction structure
#2501Integrated lateral high voltage MOSFET
#2502Semiconductor device
#2503Manufacturing method power semiconductor device
#2504Topside structures for an insulated gate bipolar transistor (IGBT) device to achieve improved device performances
#2505Lateral superjunction extended drain MOS transistor
#2506Method of fabricating a trench power MOS transistor
#2507Power converter
#2508Semiconductor device
#2509Hybrid active-field gap extended drain MOS transistor
#2510Semiconductor device including gate contact region and protruding gate electrode
#2511Semiconductor device and associated fabrication method
#2512Silicon carbide insulating gate type semiconductor device and fabrication method thereof
#2513Semiconductor device having plural insulated gate switching cells and method for designing the same
#2514Super-junction semiconductor device
#2515High voltage MOS device and method for making the same
#2516Semiconductor device with peripheral base region connected to main electrode
#2517Semiconductor device, method for manufacturing of semiconductor device, and switching circuit
#2518Semicoductor device having a lateral double diffused MOSFET transistor with a lightly doped source and a CMOS transistor
#2519Power semiconductor device having gate electrode coupling portions for etchant control
#2520Semiconductor device and method for manufacturing same
#2521Semiconductor device and method for manufacturing the same
#2522Semiconductor device
#2523Quasi-vertical gated NPN-PNP ESD protection device
#2524Semiconductor device and manufacturing method for the same
#2525Power semiconductor device
#2526Semiconductor Device and Method for Manufacturing the Same
#2527MOSFET layout and structure with common source
#2528Electrostatic discharge (ESD) tolerance for a lateral double diffusion metal oxide semiconductor (LDMOS) transistor
#2529Checkerboarded high-voltage vertical transistor layout
#2530Semiconductor device
#2531Semiconductor device
#2532Semiconductor device, method of fabricating the same, and patterning mask utilizied by the method
#2533Lateral insulated-gate bipolar transistor
#2534Semiconductor device
#2535Power semiconductor device and method of manufacturing the same
#2536Power semiconductor device and method for manufacturing the power semiconductor device
#2537Method for manufacturing silicon carbide semiconductor device
#2538Method of forming shielded gate power transistor utilizing chemical mechanical planarization
#2539Method of fabricating semiconductor device
#2540High voltage semiconductor devices
#2541Semiconductor device and method of manufacturing the same
#2542Trench structures in direct contact
#2543Depletion MOS transistor and charging arrangement
#2544Semiconductor device
#2545Semiconductor device and method of manufacturing semiconductor device
#2546SEMICONDUCTOR DEVICE
#2547SEMICONDUCTOR DEVICE
#2548Semiconductor device
#2549Method and device including transistor component having a field electrode
#2550LDMOS HAVING SINGLE-STRIP SOURCE CONTACT AND METHOD FOR MANUFACTURING SAME
#2551Semiconductor device
#2552Transistor component with reduced short-circuit current
#2553Trench MOSFET having floating dummy cells for avalanche improvement
#2554Semiconductor device structures and related processes
#2555Semiconductor component with cell structure and method for producing the same
#2556Semiconductor device having switching element and free wheel diode and method for controlling the same
#2557Semiconductor device
#2558Power semiconductor device
#2559MOS Type Semiconductor Device and Method of Manufacturing Same
#2560Method of manufacturing trench MOSFET structures using three masks process
#2561Guard ring integrated LDMOS
#2562LATERAL DRAIN MOSFET WITH SUBSTRATE DRAIN CONNECTION
#2563Semiconductor integrated circuit with high withstand voltage element forming trench isolation on substrate
#2564Semiconductor element and manufacturing method therefor
#2565Insulated gate type semiconductor device and method for fabricating the same
#2566SiC semiconductor device
#2567SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
#2568High-voltage bipolar transistor with trench field plate
#2569Semiconductor device and manufacturing method of the same
#2570ESD self protecting NLDMOS device and NLDMOS array
#2571Semiconductor device
#2572Semiconductor devices and methods of manufacturing the same
#2573Semiconductor device with equipotential ring contact at curved portion of equipotential ring electrode and method of manufacturing the same
#2574Junction field effect transistor structure
#2575METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
#2576Shielded level shift transistor
#2577Fabrication method of a power semicondutor structure with schottky diode
#2578Semiconductor device having reduced on-resistance characteristics
#2579Power semiconductor device
#2580Methods of manufacturing power semiconductor devices with shield and gate contacts
#2581Methods of manufacturing power semiconductor devices with trenched shielded split gate transistor
#2582Power supply circuit having a semiconductor device including a MOSFET and a Schottky junction
#2583High power and high temperature semiconductor power devices protected by non-uniform ballasted sources
#2584Lateral trench mosfet having a field plate
#2585Semiconductor device
#2586Current sensor, inverter circuit, and semiconductor device having the same
#2587Semiconductor device structures and related processes
#2588Semiconductor device
#2589Semiconductor device and method for manufacturing the same
#2590Method for manufacturing semiconductor device
#2591Semiconductor power devices manufactured with self-aligned processes and more reliable electrical contacts
#2592SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME
#2593LATERAL INSULATED GATE BIPOLAR TRANSISTOR
#2594SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
#2595SEMICONDUCTOR DEVICE AND PRODUCTION METHOD THEREOF
#2596SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME
#2597Semiconductor device and method for manufacturing the same
#2598Semiconductor device
#2599Semiconductor device
#2600Power semiconductor device
#2601Silicon carbide semiconductor device
#2602Semiconductor device
#2603Method of fabricating heavily doped region in double-diffused source MOSFET (LDMOS) transistor
#2604Semiconductor device
#2605Power MISFET semiconductor device
#2606Semiconductor power device having a top-side drain using a sinker trench
#2607Insulated gate semiconductor device with well region edge positioned within ring-shaped buffer trench
#2608Shielded trench MOSFET with multiple trenched floating gates as termination
#2609SHIELDED TRENCH MOSFET WITH MULTIPLE TRENCHED FLOATING GATES AS TERMINATION
#2610Trench MOSFET with trenched floating gates in termination
#2611Semiconductor device
#2612Semiconductor device
#2613Terminal structure for superjunction device and method of manufacturing the same
#2614Integrated circuit device and method for its production
#2615Low side Zener reference voltage extended drain SCR clamps
#2616Closed cell configuration to increase channel density for sub-micron planar semiconductor power device
#2617Lateral-diffusion metal-oxide semiconductor device
#2618Semiconductor device
#2619SEMICONDUCTOR DEVICE AND MANUFACTURE THEREOF
#2620Semiconductor power device having shielding electrode for improving breakdown voltage
#2621High-voltage vertical transistor with a varied width silicon pillar
#2622SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
#2623Semiconductor power device layout for stress reduction
#2624Switching device for electric circuit
#2625SEMICONDUCTOR DEVICE AND DC-DC CONVERTER
#2626Integration of a sense FET into a discrete power MOSFET
#2627Closed cell trench power MOSFET structure
#2628Power MOS transistor device and switch apparatus comprising the same
#2629Power MOS transistor device
#2630Semiconductor device including a power MISFET and method of manufacturing the same
#2631Semiconductor device
#2632Semiconductor device having insulated gate semiconductor element, and insulated gate bipolar transistor
#2633SEMICONDUCTOR DEVICE
#2634Semiconductor device
#2635Lateral double diffused MOS device and method for manufacturing the same
#2636Method of fabricating semiconductor device
#2637Power semiconductor device
#2638Semiconductor device
#2639Semiconductor device and a method of manufacturing the same
#2640Corner layout for superjunction device
#2641Shielded gate trench (SGT) MOSFET devices and manufacturing processes
#2642Vertical capacitive depletion field effect transistor
#2643Reverse-conducting semiconductor device
#2644Semiconductor device and manufacturing method of the same
#2645Semiconductor structure and fabrication method thereof
#2646SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME
#2647Semiconductor device and manufacturing method of the same
#2648Termination structure with multiple embedded potential spreading capacitive structures for trench MOSFET and method
#2649Semiconductor apparatus
#2650Insulated gate semiconductor device
#2651Compound semiconductor device and manufacturing method thereof
#2652Gallium nitride power devices using island topography
#2653Nano-tube MOSFET technology and devices
#2654Reverse conducting IGBT
#2655Power semiconductor devices integrated with clamp diodes having separated gate metal pads to avoid breakdown voltage degradation
#2656Semiconductor device
#2657Devices, components and methods combining trench field plates with immobile electrostatic charge
#2658Trench MOSFET with ultra high cell density and manufacture thereof
#2659Power semiconductor devices integrated with clamp diodes having separated gate metal pads to avoid breakdown voltage degradation
#2660Method for producing a semiconductor component arrangement comprising a trench transistor
#2661Stacked power converter structure and method
#2662Layout structure of power MOS transistor
#2663Gate electrode in a trench for power MOS transistors
#2664Semiconductor device
#2665Semiconductor component arrangement comprising a trench transistor
#2666Integrated common source power MOSFET device, and manufacturing process thereof
#2667Semiconductor component with an emitter control electrode
#2668High-voltage power transistor using SOI technology
#2669Silicon carbide semiconductor device and method of manufacturing the same
#2670Configuration of gate to drain (GD) clamp and ESD protection circuit for power device breakdown protection
#2671Power semiconductor chip, power semiconductor module, inverter apparatus, and inverter-integrated motor
#2672Charged balanced devices with shielded gate trench
#2673Semiconductor device having super junction metal oxide semiconductor structure and fabrication method for the same
#2674Lateral power MOSFET structure and method of manufacture
#2675Semiconductor device and method for fabricating the same
#2676Semiconductor device and method for manufacturing the same
#2677Method of manufacturing a semiconductor device having a super junction
#2678Lateral double-diffused MOSFET
#2679Semiconductor apparatus
#2680Internal combustion engine igniter semiconductor device
#2681Dual channel trench LDMOS transistors and BCD process with deep trench isolation
#2682Semiconductor device and manufacturing the same
#2683Lateral super junction device with high substrate-gate breakdown and built-in avalanche clamp diode
#2684Bipolar power semiconductor component comprising a p-type emitter and more highly doped zones in the p-type emitter, and production method
#2685Semiconductor device
#2686Method for manufacturing SOI substrate and semiconductor device
#2687Trench MOSFET with trenched floating gates as termination
#2688SILICON CARBIDE SEMICONDUCTOR DEVICE
#2689Method of operating integrated circuit embedded with non-volatile programmable memory having variable coupling related application data
#2690SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
#2691Integrated circuit and method for manufacturing an integrated circuit
#2692LDMOS transistor with asymmetric spacer as gate
#2693Layout structure of MOSFET and layout method thereof
#2694MOS transistor with gate trench adjacent to drain extension field insulation
#2695MOS transistor with gate trench adjacent to drain extension field insulation
#2696Semiconductor device and method for manufacturing the same
#2697Semiconductor device including semiconductor zones and manufacturing method
#2698Semiconductor device and method for producing the same
#2699Staggered column superjunction
#2700Semiconductor device and method