208232 ⎘
Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor; Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions; Surface layout of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
Field plate trench transistor and method for producing it
#2102MOS semiconductor device
#2103Gate pad and gate feed breakdown voltage enhancement
#2104Accumulation-mode field effect transistor with improved current capability
#2105Hybrid active-field gap extended drain MOS transistor
#2106Semiconductor element and manufacturing method and operating method of the same
#2107Method of forming finFET having fins of different height
#2108Schottky and MOSFET+Schottky structures, devices, and methods
#2109Field effect transitor and semiconductor device using the same
#2110Semiconductor device and manufacturing method of semiconductor device
#2111High frequency switching MOSFETs with low output capacitance using a depletable P-shield
#2112Method of manufacturing semiconductor device and semiconductor device
#2113Super junction semiconductor device with a nominal breakdown voltage in a cell area
#2114Semiconductor device including switching devices in an epitaxial layer
#2115Diode and semiconductor device including built-in diode
#2116IGBT and method of manufacturing the same
#2117Semiconductor device having a first silicon carbide semiconductor layer and a second silicon carbide semiconductor layer
#2118Electrodes for semiconductor devices and methods of forming the same
#2119Semiconductor device employing trenches for active gate and isolation
#2120Semiconductor device, and manufacturing method for same
#2121Power semiconductor device
#2122Fully isolated LIGBT and methods for forming the same
#2123Semiconductor device and method of manufacturing the same
#2124High breakdown voltage semiconductor device
#2125Semiconductor device
#2126Compliant bipolar micro device transfer head with silicon electrodes
#2127Semiconductor device
#2128Method of manufacture for a semiconductor device
#2129Trench shielding structure for semiconductor device and method
#2130Power MOSFET device with a gate conductor surrounding source and drain pillars
#2131Semiconductor device
#2132Semiconductor device and manufacturing method of the same
#2133Termination design for high voltage device
#2134Power semiconductor device
#2135Vertical power MOSFET
#2136Integrated device having MOSFET cell array embedded with barrier Schottky diode
#2137Manufacturing of electronic devices in a wafer of semiconductor material having trenches with different directions
#2138High voltage metal-oxide-semiconductor transistor device and layout pattern thereof
#2139Super junction semiconductor device and associated fabrication method
#2140Semiconductor device
#2141Silicon carbide semiconductor device having layer covering corner portion of depressed portion
#2142Lateral double-diffused MOSFET
#2143Double diffused drain metal oxide semiconductor device and manufacturing method thereof
#2144Hybrid high voltage device and manufacturing method thereof
#2145Semiconductor device with an edge termination structure having a closed vertical trench
#2146High voltage semiconductor devices
#2147Semiconductor device and method for fabricating the same
#2148Device architecture and method for improved packing of vertical field effect devices
#2149Silicon carbide semiconductor device and method of manufacturing the same
#2150Semiconductor device
#2151Trench gate type semiconductor device and method of producing the same
#2152Power semiconductor device and methods for fabricating the same
#2153Method of fabricating power transistor with protected channel
#2154Charged balanced devices with shielded gate trench
#2155Insulated gate bipolar transistor
#2156Insulated gate bipolar transistor
#2157Semiconductor device and method of manufacturing the same
#2158IGBT die structure with auxiliary P well terminal
#2159Power semiconductor device and method for manufacturing the same
#2160Insulated gate type semiconductor device and method for fabricating the same
#2161Semiconductor device with shared region
#2162Semiconductor device
#2163Dielectrically Terminated Superjunction FET
#2164MCT device with base-width-determined latching and non-latching states
#2165Semiconductor device with field-plate electrode
#2166Semiconductor device and method for manufacturing a semiconductor device
#2167Power semiconductor device
#2168Semiconductor device
#2169High voltage semiconductor device and method for fabricating the same
#2170Transistor device with field electrode
#2171Field device and method of operating high voltage semiconductor device applied with the same
#2172Semiconductor device and method of manufacturing semiconductor device
#2173Insulated gate bipolar transistor having control electrode disposed in trench
#2174Semiconductor device
#2175Semiconductor device and method for manufacturing semiconductor device
#2176Power MOSFET current sense structure and method
#2177Semiconductor device
#2178Semiconductor device and method of manufacturing same
#2179Lateral insulated gate bipolar transistor
#2180Semiconductor device and semiconductor device manufacturing method
#2181Semiconductor device arrangement with a first semiconductor device and with a plurality of second semiconductor devices
#2182Semiconductor device
#2183Semiconductor device and method of fabricating the same
#2184Double Diffused Metal Oxide Semiconductor Device and Manufacturing Method Thereof
#2185Latch-up immunity nLDMOS
#2186High side gate driver device
#2187Devices, components and methods combining trench field plates with immobile electrostatic charge
#2188Semiconductor structure and method for manufacturing the same
#2189Insulated-gate bipolar transistor
#2190Semiconductor device having improved heat dissipation
#2191Compliant bipolar micro device transfer head
#2192Trench connection between a transistor and a further component
#2193Trench-based power semiconductor devices with increased breakdown voltage characteristics
#2194Diode, semiconductor device, and MOSFET
#2195Vertical conduction power electronic device and corresponding realization method
#2196Semiconductor device
#2197Trench-based power semiconductor devices with increased breakdown voltage characteristics
#2198Trench-based power semiconductor devices with increased breakdown voltage characteristics
#2199High voltage metal-oxide-semiconductor transistor device
#2200Semiconductor device
#2201Power semiconductor device
#2202High voltage field balance metal oxide field effect transistor (FBM)
#2203Termination design for high voltage device
#2204Corner layout for high voltage semiconductor devices
#2205Power device and a reverse conducting power IGBT
#2206Monolithic bidirectional silicon carbide switching devices
#2207Semiconductor device
#2208Double diffused drain metal oxide semiconductor device and manufacturing method thereof
#2209Semiconductor device and method of fabricating same
#2210Semiconductor device
#2211Semiconductor device
#2212Semiconductor device and method for manufacturing same
#2213Trenched and implanted accumulation mode metal-oxide-semiconductor field-effect transistor
#2214Semiconductor device with charge carrier lifetime reduction means
#2215Semiconductor device and method for manufacturing same
#2216Semiconductor device
#2217Solid-state bidirectional switch having a first and a second power-FET
#2218High voltage metal-oxide-semiconductor transistor device
#2219MOSFET having source region formed in a double wells region
#2220Lateral insulated gate bipolar transistor structure with low parasitic BJT gain and stable threshold voltage
#2221Semiconductor device and method of manufacturing the same
#2222Charge compensation semiconductor device
#2223Super junction semiconductor device comprising a cell area and an edge area
#2224Semiconductor device including an edge area and method of manufacturing a semiconductor device
#2225Insulated gate semiconductor device
#2226Semiconductor component with a drift region and a drift control region
#2227Semiconductor device and driver circuit with source and isolation structure interconnected through a diode circuit, and method of manufacture thereof
#2228Semiconductor device
#2229Hybrid high voltage device and manufacturing method thereof
#2230Power transistor and associated method for manufacturing
#2231Reverse conducting IGBT
#2232Reverse Conducting IGBT
#2233Silicon carbide semiconductor device
#2234Semiconductor device and method of manufacturing the device
#2235Semiconductor device with an edge termination structure
#2236Transistor device and manufacturing method thereof
#2237Integrated snubber in a single poly MOSFET
#2238Power semiconductor device and method therefor
#2239Split trench-gate MOSFET with integrated Schottky diode
#2240Semiconductor component and method for producing a semiconductor component
#2241HIGH VOLTAGE METAL-OXIDE-SEMICONDUCTOR TRANSISTOR DEVICE
#2242Fully isolated LIGBT and methods for forming the same
#2243LDMOS transistor with asymmetric spacer as gate
#2244Double diffused metal oxide semiconductor device
#2245Semiconductor device having a breakdown voltage holding region
#2246Semiconductor device including a silicate glass structure and method of manufacturing a semiconductor device
#2247High voltage metal-oxide-semiconductor transistor device and layout pattern thereof
#2248Semiconductor device
#2249Semiconductor device
#2250Methods of manufacturing trench semiconductor devices with edge termination structures
#2251Semiconductor device and method for manufacturing a semiconductor device
#2252Semiconductor device having a diffusion region
#2253Semiconductor device
#2254Superjunction device
#2255Trench power MOSFET and fabrication method thereof
#2256Trench-gate type semiconductor device and manufacturing method therefor
#2257Wide band gap semiconductor device and method for producing the same
#2258Corner layout for superjunction device
#2259SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME
#2260Semiconductor component and method for producing it
#2261Semiconductor device having a floating semiconductor zone
#2262Trench FET with ruggedness enhancement regions
#2263Reverse conducting insulated gate bipolar transistor
#2264Staggered column superjunction
#2265Metal oxide semiconductor devices with multiple drift regions
#2266Semiconductor arrangement with a superjunction transistor and a further device integrated in a common semiconductor body
#2267POWER SEMICONDUCTOR DEVICE
#2268Semiconductor device that can maintain high voltage while lowering on-state resistance
#2269Semiconductor device and manufacturing method for same
#2270Power semiconductor device
#2271High performance power module
#2272Multi-drain semiconductor power device and edge-termination structure thereof
#2273Transistor and method of manufacturing the same
#2274Schottky diode integrated into LDMOS
#2275Vertical transistor having edge termination structure
#2276Vertical trench IGBT and method for manufacturing the same
#2277High voltage metal-oxide-semiconductor transistor device and layout pattern thereof
#2278Closed cell trenched power semiconductor structure
#2279Double-sided vertical semiconductor device with thinned substrate
#2280Nano-tube MOSFET technology and devices
#2281Semiconductor device with improved robustness
#2282Semiconductor structure and method for forming the same
#2283Semiconductor device
#2284Semiconductor device including a MOSFET and Schottky junction
#2285Semiconductor structure and method for forming the same
#2286Power integrated circuit with incorporated sense FET
#2287Silicon carbide semiconductor device and method for manufacturing silicon carbide semiconductor device
#2288Power module for supporting high current densities
#2289Medium voltage MOSFET device
#2290Semiconductor device having a variation lateral doping structure and method for manufaturing the same
#2291High voltage MOSFET device
#2292Power Transistor
#2293Current measurement in a power transistor
#2294Semiconductor device
#2295Lateral DMOS device with dummy gate
#2296Method for forming self-aligned trench contacts of semiconductor components and a semiconductor component
#2297Switching element
#2298Semiconductor device and method for producing the same
#2299Semiconductor device
#2300IE type trench gate IGBT
#2301Semiconductor device with protective diode
#2302Semiconductor device with high breakdown voltage and manufacture thereof
#2303Lateral diffused metal-oxide-semiconductor device
#2304Power semiconductor device
#2305Insulated gate bipolar transistor structure having low substrate leakage
#2306Semiconductor device
#2307Trench-gate RESURF semiconductor device and manufacturing method
#2308Integrated circuit including a power transistor and an auxiliary transistor
#2309Power semiconductor device
#2310SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
#2311Radio-frequency switches having silicon-on-insulator field-effect transistors with reduced linear region resistance
#2312High voltage semiconductor device
#2313Semiconductor structure for an electronic interruptor power switch
#2314Semiconductor component
#2315DMOS TRANSISTOR ON SOI
#2316Semiconductor device and the method of manufacturing the same
#2317Superjunction semiconductor device
#2318Integrated gate runner and field implant termination for trench devices
#2319Power semiconductor device
#2320High-voltage MOSFETs having current diversion region in substrate near fieldplate
#2321Method of manufacturing NMOS transistor with low trigger voltage
#2322Power semiconductor diode, IGBT, and method for manufacturing thereof
#2323Semiconductor power device integrated with improved gate source ESD clamp diodes
#2324Semiconductor device
#2325Lateral stack-type super junction power semiconductor device
#2326Strapped dual-gate VDMOS device
#2327SEMICONDUCTOR DEVICE
#2328Semiconductor device including a counter layer, for power conversion and method of manufacturing the same
#2329Semiconductor device having lateral element
#2330Semiconductor power devices integrated with a trenched clamp diode
#2331Semiconductor power device with embedded diodes and resistors using reduced mask processes
#2332Semiconductor device and method for manufacturing semiconductor device
#2333Integrated voltage divider
#2334Power transistor with controllable reverse diode
#2335Termination for superjunction VDMOSFET
#2336Semiconductor device and method for manufacturing same
#2337SILICON CARBIDE MOSFET WITH HIGH MOBILITY CHANNEL
#2338SEMICONDUCTOR DEVICE
#2339SEMICONDUCTOR DEVICE WITH HIGH-VOLTAGE BREAKDOWN PROTECTION
#2340Silicon carbide semiconductor device and method for manufacturing same
#2341Junction field effect transistor and analog circuit
#2342Semiconductor device with an amorphous semi-insulating layer, temperature sensor, and method of manufacturing a semiconductor device
#2343High voltage metal-oxide-semiconductor transistor device and method of fabricating the same
#2344Dielectric isolation substrate and semiconductor device
#2345Semiconductor device and method of manufacturing the same
#2346Semiconductor device
#2347Semiconductor device and a method for forming a semiconductor device
#2348Semiconductor device
#2349Semiconductor device
#2350Power MOSFET, an IGBT, and a power diode
#2351Semiconductor device having at least a transistor cell with a second conductive type region surrounding a wall region and being insulated from both gate electrode and source electrode and solid state relay using same
#2352Semiconductor device and manufacturing method thereof
#2353SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
#2354Methods for fabricating anode shorted field stop insulated gate bipolar transistor
#2355Planar SRFET using no additional masks and layout method
#2356Vertical transistor with improved robustness
#2357Silicon-carbide MOSFET cell structure and method for forming same
#2358High voltage device and manufacturing method thereof
#2359Semiconductor device and electric power conversion system using the same
#2360Semiconductor device
#2361Power semiconductor device and method for manufacturing same
#2362MOSFET-Schottky rectifier-diode integrated circuits with trench contact structures
#2363Shielded gate MOSFET-Schottky rectifier-diode integrated circuits with trenched contact structures
#2364Nanotube semiconductor devices and nanotube termination structures
#2365Vertical IGBT adjacent a RESURF region
#2366SEMICONDUCTOR DEVICE
#2367High voltage bipolar transistor with trench field plate
#2368Metal oxide semiconductor field transistor
#2369Semiconductor device
#2370Insulated gate bipolar transistor (IGBT) with hole stopper layer
#2371Semiconductor device comprising bipolar and unipolar transistors including a concave and convex portion
#2372METHOD OF MANUFACTURING TRENCH MOSFET USING THREE MASKS PROCESS HAVING TILT- ANGLE SOURCE IMPLANTS
#2373SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
#2374Semiconductor device, method of manufacturing the semiconductor device, and electronic device
#2375Semiconductor device having a floating semiconductor zone
#2376Semiconductor device
#2377Trench transistor and manufacturing method of the trench transistor
#2378Superjunction device and method for manufacturing the same
#2379Semiconductor device and manufacturing method
#2380Semiconductor device and method for manufacturing same
#2381Monolithically integrated circuit
#2382Manufacturing of a semiconductor device and corresponding semiconductor device
#2383Power integrated circuit device with incorporated sense FET
#2384Semiconductor element
#2385Lateral trench MESFET
#2386High voltage and ultra-high voltage semiconductor devices with increased breakdown voltages
#2387SEMICONDUCTOR DEVICE HAVING A SUPER JUNCTION STRUCTURE AND METHOD OF MANUFACTURING THE SAME
#2388Semiconductor device
#2389Method of manufacturing semiconductor device and semiconductor device
#2390Method to fabricate a closed cell trench power MOSFET structure
#2391Lateral double diffused metal oxide semiconductor device and method of manufacturing the same
#2392Monolithic metal oxide semiconductor field effect transistor-Schottky diode device
#2393Semiconductor structure and method for operating the same
#2394IE-type trench gate IGBT
#2395SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
#2396Semiconductor device and driving circuit
#2397High voltage device with additional isolation region under gate and manufacturing method thereof
#2398Lateral-diffused metal oxide semiconductor device (LDMOS) and fabrication method thereof
#2399Trench MOS structure and method for making the same
#2400Apparatus for electrostatic discharge protection