ClassID:

208243

H01L29/0843 - page 2 - CPC Classification

Classification description:

Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor; Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes Source or drain regions of field-effect devices

Recent Application in this class:
#301
20120153263
2012-06-21

Tunnel field effect transistor

#302
20120138958
2012-06-07

SILICON CARBIDE SEMICONDUCTOR DEVICE

#303
20120074469
2012-03-29

Asymmetric wedge JFET, related method and design structure

#304
20120019283
2012-01-26

Spin MOSFET and reconfigurable logic circuit

#305
20110291159
2011-12-01

Stress release structures for metal electrodes of semiconductor devices

#306
20110284930
2011-11-24

Asymmetric silicon-on-insulator (SOI) junction field effect transistor (JFET) and a method of forming the asymmetrical SOI JFET

#307
20110284865
2011-11-24

Heterojunction field effect transistor, method for producing heterojunction field effect transistor, and electronic device

#308
20110267132
2011-11-03

Bi-directional circuit breaker

#309
20110248280
2011-10-13

Transistor having thermo electron cooling

#310
20110227095
2011-09-22

Semiconductor device including a normally-on transistor and a normally-off transistor

#311
20110212583
2011-09-01

Method for providing semiconductors having self-aligned ion implant

#312
20110193096
2011-08-11

Compound semiconductor device and manufacturing method thereof

#313
20110183480
2011-07-28

Semiconductor device with group III-V channel and group IV source-drain and method for manufacturing the same

#314
20110147808
2011-06-23

Asymmetric junction field effect transistor

#315
20110140087
2011-06-16

Scalable quantum well device and method for manufacturing the same

#316
20110127586
2011-06-02

Lateral super junction device with high substrate-gate breakdown and built-in avalanche clamp diode

#317
20110121883
2011-05-26

System and method for providing symmetric, efficient bi-directional power flow and power conditioning

#318
20110101424
2011-05-05

Junction field effect transistor

#319
20110101423
2011-05-05

Junction field effect transistor

#320
20110092057
2011-04-21

Methods of fabricating transistors using laser annealing of source/drain regions

#321
20110089497
2011-04-21

Semiconductor device having nickel silicide layer

#322
20110057232
2011-03-10

Methods of forming group III-nitride semiconductor devices including implanting ions directly into source and drain regions and annealing to activate the implanted ions

#323
20100327293
2010-12-30

Field-effect transistor

#324
20100308401
2010-12-09

Power semiconductor device

#325
20100277006
2010-11-04

Solid state circuit breaker

#326
20100244897
2010-09-30

Spin MOSFET and reconfigurable logic circuit

#327
20100224861
2010-09-09

Twin-drain spatial wavefunction switched field-effect transistors

#328
20100207173
2010-08-19

Asymmetric junction field effect transistor

#329
20100198521
2010-08-05

Chemically sensitive field effect transistors and uses thereof in electronic nose devices

#330
20100140672
2010-06-10

Field effect transistor

#331
20100140663
2010-06-10

CMOS compatable fabrication of power GaN transistors on a <100> silicon substrate

#332
20100123179
2010-05-20

Device with polymer layers and two-step self-aligned source etch with large process window

#333
20090283756
2009-11-19

Scalable quantum well device and method for manufacturing the same

#334
20090258464
2009-10-15

METHODS FOR MANUFACTURING A HIGH VOLTAGE JUNCTION FIELD EFFECT TRANSISTOR USING A HYBRID ORIENTATION TECHNOLOGY WAFER

#335
20090242938
2009-10-01

Field effect transistor

#336
20090227081
2009-09-10

Semiconductor device doped with Sb, Ga, or Bi and method of manufacturing the same

#337
20090194790
2009-08-06

Field effect transistor having semiconductor operating layer formed with an inclined side wall

#338
20090189203
2009-07-30

Semiconductor device and method of manufacturing the same

#339
20090142894
2009-06-04

Method for fabricating a semiconductor structure

#340
20090141409
2009-06-04

SPIN FILTER SPINTRONIC DEVICES

#341
20090078971
2009-03-26

Semiconductor device with structured current spread region and method

#342
20090001423
2009-01-01

Field-effect transistor and method of making same

#343
20080272406
2008-11-06

Double gate JFET with reduced area consumption and fabrication method therefor

#344
20080272395
2008-11-06

ENHANCED HOLE MOBILITY P-TYPE JFET AND FABRICATION METHOD THEREFOR

#345
20080272394
2008-11-06

JUNCTION FIELD EFFECT TRANSISTORS IN GERMANIUM AND SILICON-GERMANIUM ALLOYS AND METHOD FOR MAKING AND USING

#346
20080248635
2008-10-09

Polycrystalline SiGe Junctions for advanced devices

#347
20080237638
2008-10-02

Semiconductor device

#348
20080169492
2008-07-17

Spin transistor using stray magnetic field

#349
20080128862
2008-06-05

Semiconductor device having vertical electrodes structure

#350
20080128777
2008-06-05

Two-step self-aligned source etch with large process window

#351
20070241338
2007-10-18

SIC semiconductor device and method for manufacturing the same

#352
20070210376
2007-09-13

Integrated circuit system with double doped drain transistor

#353
20070145410
2007-06-28

JFET with drain and/or source modification implant

#354
20070059877
2007-03-15

Spin transistor using spin-orbit coupling induced magnetic field

#355
20070010076
2007-01-11

Polycrystalline SiGe junctions for advanced devices

#356
20060275992
2006-12-07

Method to improve drive current by increasing the effective area of an electrode

#357
20060273347
2006-12-07

Field-effect transistor with nitride semiconductor and method for fabricating the same

#358
20060157777
2006-07-20

Semiconductor device doped with Sb, Ga or Bi and method of manufacturing the same

#359
20060141682
2006-06-29

Method of fabricating semiconductor devices employing at least one modulation doped quantum well structure and one or more etch stop layers for accurate contact formation

#360
20060141651
2006-06-29

Method of fabricating semiconductor devices employing at least one modulation doped quantum well structure and one or more etch stop layers for accurate contact formation

#361
20060124962
2006-06-15

Field effect transistor and method for fabricating the same

#362
20060108651
2006-05-25

Lowered Source/Drain Transistors

#363
20060105512
2006-05-18

Method to improve drive current by increasing the effective area of an electrode

#364
20050260832
2005-11-24

Polycrystalline SiGe junctions for advanced devices

#365
20050167698
2005-08-04

Semiconductor device

#366
18150942
2024-01-16

Split source drain transistor

#367
17082954
2022-01-18

Nano-sheet-based devices with asymmetric source and drain configurations

#368
16264273
2020-07-07

Method, apparatus, and system for improving scaling of isolation structures for gate, source, and/or drain contacts

#369
16252932
2020-04-28

Localized tunneling enhancement for semiconductor devices

#370
16037072
2019-12-10

Integrating a junction field effect transistor into a vertical field effect transistor

#371
15820947
2018-11-27

Transistors with dielectric-isolated source and drain regions

#372
15808869
2018-11-20

Transistor with asymmetric spacers

#373
15800097
2018-08-21

Semiconductor device and method of fabricating the same

#374
15353857
2018-01-30

HEMT having conduction barrier between drain fingertip and source

#375
15297120
2017-12-26

Stacked capacitor structure

#376
15260441
2017-06-20

Conductive contacts in semiconductor on insulator substrate

#377
15092986
2017-03-14

Vertical single electron transistor formed by condensation

#378
14744887
2016-09-20

High germanium content FinFET devices having the same contact material for nFET and pFET devices

#379
14631886
2016-07-19

Reduced current leakage semiconductor device

#380
14538877
2015-12-29

Silicon carbide static induction transistor and process for making a silicon carbide static induction transistor

#381
14227267
2015-08-11

Dual epitaxial process including spacer adjustment