208243 ⎘
Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor; Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes Source or drain regions of field-effect devices
Tunnel field effect transistor
#302SILICON CARBIDE SEMICONDUCTOR DEVICE
#303Asymmetric wedge JFET, related method and design structure
#304Spin MOSFET and reconfigurable logic circuit
#305Stress release structures for metal electrodes of semiconductor devices
#306Asymmetric silicon-on-insulator (SOI) junction field effect transistor (JFET) and a method of forming the asymmetrical SOI JFET
#307Heterojunction field effect transistor, method for producing heterojunction field effect transistor, and electronic device
#308Bi-directional circuit breaker
#309Transistor having thermo electron cooling
#310Semiconductor device including a normally-on transistor and a normally-off transistor
#311Method for providing semiconductors having self-aligned ion implant
#312Compound semiconductor device and manufacturing method thereof
#313Semiconductor device with group III-V channel and group IV source-drain and method for manufacturing the same
#314Asymmetric junction field effect transistor
#315Scalable quantum well device and method for manufacturing the same
#316Lateral super junction device with high substrate-gate breakdown and built-in avalanche clamp diode
#317System and method for providing symmetric, efficient bi-directional power flow and power conditioning
#318Junction field effect transistor
#319Junction field effect transistor
#320Methods of fabricating transistors using laser annealing of source/drain regions
#321Semiconductor device having nickel silicide layer
#322Methods of forming group III-nitride semiconductor devices including implanting ions directly into source and drain regions and annealing to activate the implanted ions
#323Field-effect transistor
#324Power semiconductor device
#325Solid state circuit breaker
#326Spin MOSFET and reconfigurable logic circuit
#327Twin-drain spatial wavefunction switched field-effect transistors
#328Asymmetric junction field effect transistor
#329Chemically sensitive field effect transistors and uses thereof in electronic nose devices
#330Field effect transistor
#331CMOS compatable fabrication of power GaN transistors on a <100> silicon substrate
#332Device with polymer layers and two-step self-aligned source etch with large process window
#333Scalable quantum well device and method for manufacturing the same
#334METHODS FOR MANUFACTURING A HIGH VOLTAGE JUNCTION FIELD EFFECT TRANSISTOR USING A HYBRID ORIENTATION TECHNOLOGY WAFER
#335Field effect transistor
#336Semiconductor device doped with Sb, Ga, or Bi and method of manufacturing the same
#337Field effect transistor having semiconductor operating layer formed with an inclined side wall
#338Semiconductor device and method of manufacturing the same
#339Method for fabricating a semiconductor structure
#340SPIN FILTER SPINTRONIC DEVICES
#341Semiconductor device with structured current spread region and method
#342Field-effect transistor and method of making same
#343Double gate JFET with reduced area consumption and fabrication method therefor
#344ENHANCED HOLE MOBILITY P-TYPE JFET AND FABRICATION METHOD THEREFOR
#345JUNCTION FIELD EFFECT TRANSISTORS IN GERMANIUM AND SILICON-GERMANIUM ALLOYS AND METHOD FOR MAKING AND USING
#346Polycrystalline SiGe Junctions for advanced devices
#347Semiconductor device
#348Spin transistor using stray magnetic field
#349Semiconductor device having vertical electrodes structure
#350Two-step self-aligned source etch with large process window
#351SIC semiconductor device and method for manufacturing the same
#352Integrated circuit system with double doped drain transistor
#353JFET with drain and/or source modification implant
#354Spin transistor using spin-orbit coupling induced magnetic field
#355Polycrystalline SiGe junctions for advanced devices
#356Method to improve drive current by increasing the effective area of an electrode
#357Field-effect transistor with nitride semiconductor and method for fabricating the same
#358Semiconductor device doped with Sb, Ga or Bi and method of manufacturing the same
#359Method of fabricating semiconductor devices employing at least one modulation doped quantum well structure and one or more etch stop layers for accurate contact formation
#360Method of fabricating semiconductor devices employing at least one modulation doped quantum well structure and one or more etch stop layers for accurate contact formation
#361Field effect transistor and method for fabricating the same
#362Lowered Source/Drain Transistors
#363Method to improve drive current by increasing the effective area of an electrode
#364Polycrystalline SiGe junctions for advanced devices
#365Semiconductor device
#366Split source drain transistor
#367Nano-sheet-based devices with asymmetric source and drain configurations
#368Method, apparatus, and system for improving scaling of isolation structures for gate, source, and/or drain contacts
#369Localized tunneling enhancement for semiconductor devices
#370Integrating a junction field effect transistor into a vertical field effect transistor
#371Transistors with dielectric-isolated source and drain regions
#372Transistor with asymmetric spacers
#373Semiconductor device and method of fabricating the same
#374HEMT having conduction barrier between drain fingertip and source
#375Stacked capacitor structure
#376Conductive contacts in semiconductor on insulator substrate
#377Vertical single electron transistor formed by condensation
#378High germanium content FinFET devices having the same contact material for nFET and pFET devices
#379Reduced current leakage semiconductor device
#380Silicon carbide static induction transistor and process for making a silicon carbide static induction transistor
#381Dual epitaxial process including spacer adjustment