208243 ⎘
Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor; Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes Source or drain regions of field-effect devices
Sub-classes:SEMICONDUCTOR POWER DEVICE
#2GALLIUM NITRIDE TRANSISTOR WITH A DOPED REGION
#3JUNCTION FIELD EFFECT TRANSISTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
#4SEMICONDUCTOR DEVICE
#5SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
#6Semiconductor Memory Structures And Method Of Forming The Same
#7FINFETS WITH EPITAXY REGIONS HAVING MIXED WAVY AND NON-WAVY PORTIONS
#8Manufacturing method of semiconductor device
#9INTEGRATED CIRCUIT STRUCTURE AND MANUFACTURING METHOD THEREOF
#10Selective liner on backside via and method thereof
#11AMPLIFIER CIRCUIT
#12Lateral fin static induction transistor
#13SEMICONDUCTOR DEVICE
#14Split source drain transistor
#15SEMICONDUCTOR DEVICE AND THE MANUFACTURING METHOD THEREOF
#16EPITAXIAL SOURCE OR DRAIN REGION WITH A WRAPPED CONDUCTIVE CONTACT
#17CHEMICAL MECHANICAL POLISHING OF CARBON HARD MASK
#18Semiconductor devices and methods of manufacture
#19SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME
#20Semiconductor device and method of manufacturing the same
#21SEMICONDUCTOR STRUCTURE AND PREPARATION METHOD THEREOF
#22COMPOUND SEMICONDUCTOR DEVICES WITH A CONDUCTIVE COMPONENT TO CONTROL ELECTRICAL CHARACTERISTICS
#23SUPPORTIVE LAYER IN SOURCE/DRAINS OF FINFET DEVICES
#24SEMICONDUCTOR DEVICE HAVING 2D CHANNEL LAYER
#25SILICON-ON-INSULATOR (SOI) DEVICE HAVING VARIABLE THICKNESS DEVICE LAYER AND CORRESPONDING METHOD OF PRODUCTION
#26SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
#27NITRIDE SEMICONDUCTOR DEVICE
#28FinFETs with epitaxy regions having mixed wavy and non-wavy portions
#29Gallium nitride transistor with a doped region
#30Selective liner on backside via and method thereof
#31TRANSISTOR SOURCE/DRAIN CONTACTS AND METHODS OF FORMING THE SAME
#32Nitride-based multi-channel switching semiconductor device and method for manufacturing the same
#33METHOD FOR FORMING SILICON-PHOSPHOROUS MATERIALS
#34LATERAL POWER SEMICONDUCTOR DEVICE
#35Semiconductor device and manufacturing method thereof
#36Group III-V semiconductor structures having crystalline regrowth layers and methods for forming such structures
#37Semiconductor devices and methods of manufacture
#38Semiconductor device and method of forming the same
#39Semiconductor structure and manufacturing method thereof
#40Compound semiconductor device and method of manufacturing compound semiconductor device
#41Semiconductor device and method of manufacturing the same
#42Semiconductor device and manufacturing method of the same
#43SOURCE/DRAIN CONTACTS BETWEEN TRANSISTOR GATES WITH ABBREVIATED INNER SPACERS FOR IMPROVED CONTACT AREA AND RELATED METHOD OF FABRICATION
#44Supportive layer in source/drains of FinFET devices
#45Semiconductor devices
#46Method for forming an integrated circuit having transistor gates over an interconnection structure
#47Semiconductor device
#48Active region, active region array and formation method thereof
#49Semiconductor device having 2D channel layer
#50Vertical semiconductor device with enhanced contact structure and associated methods
#51Selective liner on backside via and method thereof
#52Semiconductor Memory Structures And Method Of Forming The Same
#53Transistor source/drain contacts and methods of forming the same
#54Semiconductor structure
#55INTEGRATED CIRCUIT LAYOUTS WITH SOURCE AND DRAIN CONTACTS OF DIFFERENT WIDTHS
#56FinFETs with epitaxy regions having mixed wavy and non-wavy portions
#57Semiconductor device and manufacturing method therefor
#58Semiconductor device and manufacturing method therefor
#59Group III-V semiconductor structures having crystalline regrowth layers and methods for forming such structures
#60Nano-sheet-based devices with asymmetric source and drain configurations
#61Methods for forming semiconductor devices using sacrificial capping and insulation layers
#62Semiconductor device
#63METHOD OF MANUFACTURING A DOPED AREA OF A MICROELECTRONIC DEVICE
#64Semiconductor devices
#65Structure providing charge controlled electronic fuse
#66ELECTRONIC SECURITY COMPONENT
#67Semiconductor device
#68Method for Forming a Semiconductor Structure Having a Porous Semiconductor Layer in RF Devices
#69Semiconductor devices
#70Selective liner on backside via and method thereof
#71Distributed inductance integrated field effect transistor structure
#72Semiconductor device
#73Gate all-around semiconductor device
#74Epitaxial semiconductor material regions for transistor devices and methods of forming same
#75Semiconductor device and manufacturing method therefor
#76Semiconductor device and manufacturing method thereof
#77Bottom dielectric isolation structure for nanosheet containing devices
#78Gallium nitride transistor with a doped region
#79High electron mobility transistor (HEMT)
#80Electronic device including a junction field-effect transistor
#81Methods for selective deposition of doped semiconductor material
#82Semiconductor structure having porous semiconductor layer for RF devices
#83Method of making semiconductor device having first and second epitaxial materials
#84Epitaxial structure of N-face group III nitride, active device, and gate protection device thereof
#85Supportive layer in source/drains of FinFET devices
#86Vertical semiconductor device with enhanced contact structure and associated methods
#87Semiconductor device and fabricating method thereof
#88Lateral fin static induction transistor
#89High-electron-mobility transistor (HEMT) semiconductor devices with reduced dynamic resistance
#90Semiconductor devices comprising getter layers and methods of making and using the same
#91Epitaxial structures of a semiconductor device having a wide gate pitch
#92Method for forming silicon-phosphorous materials
#93RF high-electron-mobility transistors including group III-N stress neutral barrier layers with high breakdown voltages
#94Semiconductor devices
#95Semiconductor device and driving method thereof
#96Crystalline magnesium oxide carbon composites
#97IC product with a novel bit cell design and a memory array comprising such bit cells
#98MODULARIZED INEXPENSIVE DETECTION OF CEREBRAL SPINAL FLUID FOR MEDICAL APPLICATIONS
#99HEMT having conduction barrier between drain fingertip and source
#100Semiconductor device
#101SUBSTRATE-GATED GROUP III-V TRANSISTORS AND ASSOCIATED FABRICATION METHODS
#102Multiple-state electrostatically-formed nanowire transistors
#103Field effect transistor and process of forming the same
#104Gallium nitride transistor with a doped region
#105Transistor having blocks of source and drain silicides near the channel
#106Semiconductor device with epitaxial source/drain
#107Apparatus and circuits including transistors with different gate stack materials and methods of fabricating the same
#108Integrated circuit layouts with source and drain contacts of different widths
#109Semiconductor devices and methods for fabricating the same
#110Semiconductor device
#111Semiconductor device and fabricating method thereof
#112Semiconductor device and fabricating method thereof
#113Method and structure for forming a vertical field-effect transistor
#114Integrating a junction field effect transistor into a vertical field effect transistor
#115Conductive contacts in semiconductor on insulator substrate
#116Method and structure for forming a vertical field-effect transistor
#117Semiconductor device
#118Method for manufacturing semiconductor structure
#119Low voltage (power) junction FET with all-around junction gate
#120Semiconductor device and method of manufacturing the same
#121Transistor with asymmetric spacers
#122Depletion mode semiconductor devices including current dependent resistance
#123Supportive layer in source/drains of FinFET devices
#124Integrated gate driver
#125Semiconductor structures and method for fabricating the same
#126Semiconductor device including enhanced contact structures having a superlattice
#127Method for making a semiconductor device including enhanced contact structures having a superlattice
#128Stacked complementary junction FETs for analog electronic circuits
#129Stacked complementary junction FETs for analog electronic circuits
#130Device integrated with junction field effect transistor and method for manufacturing the same
#131Highly scaled linear GaN HEMT Structures
#132High electron mobility transistor
#133Semiconductor device including conductive patterns
#134Semiconductor devices with regrown contacts and methods of fabrication
#135Vertical bipolar transistors
#136Compound semiconductor device including protective layer and ohmic electrode
#137Lateral fin static induction transistor
#138Schottky diodes on semipolar planes of group III-N material structures
#139Semiconductor device and fabricating method thereof
#140Semiconductor device and semiconductor device manufacturing method
#141TRANSISTORS WITH DIELECTRIC-ISOLATED SOURCE AND DRAIN REGIONS
#142Semiconductor device including a liner layer between a channel and a source/drain epitaxial layer
#143FOUR TERMINAL STACKED COMPLEMENTARY JUNCTION FIELD EFFECT TRANSISTORS
#144Transistor with asymmetric spacers
#145High electron mobility transistor structure
#146III-NITRIDE VERTICAL TRANSISTOR WITH APERTURE REGION FORMED USING ION IMPLANTATION
#147Semiconductor structure and the method of making the same
#148Field effect transistor and process of forming the same
#149Ultra-thin-body GaN on insulator device
#150Epitaxial structure of N-face AlGaN/GaN, active device, and method for fabricating the same with integration and polarity inversion
#151Logic gate cell structure
#152Process of forming nitride semiconductor device
#153Compound semiconductor device with quantum well structure, power supply device, and high-frequency amplifier
#154Monolithically integrated semiconductor switch, in particular a power circuit breaker
#155Ambipolar synaptic devices
#156SEMICONDUCTOR DEVICE, ELECTRONIC PART, ELECTRONIC APPARATUS, AND METHOD FOR FABRICATING SEMICONDUCTOR DEVICE
#157Field-effect transistor
#158Low voltage (power) junction FET with all-around junction gate
#159High power compound semiconductor field effect transistor devices with low doped drain
#160Compound semiconductor device and fabrication method
#161Semiconductor structure and manufacturing method thereof
#162Lateral fin static induction transistor
#163Four terminal stacked complementary junction field effect transistors
#164Transistor, semiconductor device, electronic apparatus, and method for producing transistor
#165Enhancement-mode/depletion-mode field-effect transistor GAN technology
#166Electronic device including a temperature sensor
#167Semiconductor device and method for manufacturing the same
#168Compound semiconductor device and method for manufacturing the same
#169Vertical III-N transistors with lateral overgrowth over a protruding III-N semiconductor structure
#170Semiconductor device and manufacturing method thereof
#171Semiconductor device
#172Chemically sensitive field effect transistors and uses thereof in electronic nose devices
#173High electron mobility transistor
#174Nanosheet CMOS transistors
#175Nanosheet CMOS transistors
#176Nitride semiconductor device including a horizontal switching device
#177System and method for depletion mode and enhancement mode transistors
#178SURFACE MODIFIED DIAMOND MATERIALS AND METHODS OF MANUFACTURING
#179ALUMINUM-GALLIUM-NITRIDE COMPOUND/GALLIUM-NITRIDE HIGH-ELECTRON-MOBILITY TRANSISTOR
#180Hemt having heavily doped N-type regions and process of forming the same
#181HEMT having conduction barrier between drain fingertip and source
#182Semiconductor device
#183Semiconductor device and method for manufacturing same
#184High-electron-mobility transistor (HEMT) semiconductor devices with reduced dynamic resistance
#185Semiconductor device and method of manufacturing the same
#186Semiconductor device having first and second epitaxial materials
#187Method of manufacturing a semiconductor device having electrode trenches, isolated source zones and separation structures
#188Semiconductor device with epitaxial source/drain
#189Integrated gate driver
#190Conductive contacts in semiconductor on insulator substrate
#191Compound semiconductor device and method of manufacturing the compound semiconductor device
#192Depletion mode semiconductor devices including current dependent resistance
#193Method of producing a high-voltage semiconductor drift device
#194Semiconductor device
#195Normally-off hetrojunction transistor with high threshold voltage
#196METHOD OF SELECTIVE ETCHING ON EPITAXIAL FILM ON SOURCE/DRAIN AREA OF TRANSISTOR
#197Ambipolar synaptic devices
#198Electrostatic discharge protection semiconductor device and layout structure of ESD protection semiconductor device
#199Method of forming epitaxial buffer layer for finFET source and drain junction leakage reduction
#200Double heterojunction field effect transistor with polarization compensated layer
#201Process of forming a high electron mobility transistor (HEMT)
#202Microelectronic sensor for biometric authentication
#203Multiple state electrostatically formed nanowire transistors
#204Integrated circuit devices and methods of manufacturing the same
#205Planar multi-implanted JFET
#206High electron mobility transistor (HEMT)
#207Semiconductor devices comprising getter layers and methods of making and using the same
#208High electron mobility transistor structure
#2093-5 device with doped regions and method of fabricating
#210MISHFET having a comparatively high and selectable or customizable breakdown voltage
#211Planar triple-implanted JFET
#212Reduction of defect induced leakage in III-V semiconductor devices
#213Bidirectional normally-off III-V high electron mobility transistor (HEMT)devices and circuits
#214Heterojunction field-effect transistor having germanium-doped source and drain regions
#215Source/drain regions for high electron mobility transistors (HEMT) and methods of forming same
#216Method of forming high electron mobility transistor
#217High electron-mobility transistor
#218Transition metal dichalcogenide semiconductor assemblies
#219Ambipolar synaptic devices
#220Trench vertical JFET with improved threshold voltage control
#221OXIDE THIN FILM TRANSISTOR AND METHOD FOR MANUFACTURING THE SAME, ARRAY SUBSTRATE AND METHOD FOR MANUFACTURING THE SAME, AND DISPLAY DEVICE
#222Fabrication methodology for optoelectronic integrated circuits
#223Extremely large spin hall angle in topological insulator pn junction
#224Semiconductor devices comprising getter layers and methods of making and using the same
#225Semiconductor device and method of fabricating the same
#226Ultra massive MIMO communication in the terahertz band
#227Semiconductor device and fabrication method thereof
#228MOS capacitors structures for variable capacitor arrays and methods of forming the same
#229High-voltage semiconductor device and method of producing the same
#230Magnetoresistive element and spin-transport element
#231Method of forming epitaxial buffer layer for finFET source and drain junction leakage reduction and semiconductor device having reduced junction leakage
#232Method of forming epitaxial buffer layer for finFET source and drain junction leakage reduction
#233Method of manufacturing semiconductor devices by bonding a semiconductor disk on a base substrate, composite wafer and semiconductor device
#234Reduced current leakage semiconductor device
#235Reduced current leakage semiconductor device
#236Tunnel thin film transistor with hetero-junction structure
#237Group III-nitride-based enhancement mode transistor having a multi-heterojunction fin structure
#238Integrated circuit devices and methods of manufacturing the same
#239Compound semiconductor device and manufacturing method of the same
#240Nitride semiconductor device comprising nitride semiconductor regrowth layer
#241Compound gated semiconductor device having semiconductor field plate
#242Tunnel field-effect transistor (TFET) with supersteep sub-threshold swing
#243Silicon carbide static induction transistor and process for making a silicon carbide static induction transistor
#244High-electron-mobility transistor
#245Method of manufacturing a vertical junction field effect transistor
#246High-electron-mobility transistor with protective diode
#247High voltage depletion mode N-channel JFET
#248Field effect transistor and method of fabricating the same
#249Circuit arrangement for modeling transistor layout characteristics
#250Junction field effect transistor
#251Semiconductor heterojunction device
#252Method of forming high electron mobility transistor
#253FinFET and method for manufacturing the same
#254Semiconductor device and insulated gate bipolar transistor with source zones formed in semiconductor mesas
#255Semiconductor device and method of manufacturing the same
#256Semiconductor device and manufacturing method thereof
#257Method for a uniform compressive strain layer and device thereof
#258Ambipolar synaptic devices
#259Ambipolar synaptic devices
#260Ambipolar synaptic devices
#261Semiconductor devices comprising getter layers and methods of making and using the same
#262Field-effect transistor and method for the fabrication thereof
#263High voltage junction field effect transistor
#264Junction field effect transistor, and method of manufacture thereof
#265Semiconductor device and fabrication method thereof
#266AIR-SPACER MOS TRANSISTOR
#267Junction field effect transistor with vertical PN junction
#268High electron mobility transistor and method of manufacturing the same
#269Manufacturing method of semiconductor device including indium
#270Engineered source/drain region for n-Type MOSFET
#271Vertical JFET with body diode and device regions disposed in a single compound epitaxial layer
#272Load-short-circuit-tolerant semiconductor device having trench gates
#273Semiconductor device and method for manufacturing the same
#274Reducing pattern loading effect in epitaxy
#275Epitaxial layer
#276Semiconductor device and method of manufacturing same
#277Tunnel field effect transistor
#278Gallium nitride devices having low ohmic contact resistance
#279Semiconductor device including a normally-off transistor and transistor cells of a normally-on GaN HEMT
#280Non-uniform two dimensional electron gas profile in III-Nitride HEMT devices
#281Semiconductor device
#282High electron mobility transistor and method of forming the same
#283Device and method for forming on a nanowire made of a semiconductor an alloy of this semiconductor with a metal or a metalloid
#284Complementary junction field effect transistor device and its gate-last fabrication method
#285Compound semiconductor device with buried field plate
#286Compound semiconductor device and manufacturing method of the same
#287High electron mobility transistor structure with improved breakdown voltage performance
#288Heterojunction field-effect transistor with source electrode and insulator formed in semiconductor layer opening
#289Semiconductor device and substrate with chalcogen doped region
#290Electrode structures, gallium nitride based semiconductor devices including the same and methods of manufacturing the same
#291COMPOUND SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING THE SAME, AND ELECTRONIC CIRCUIT
#292Semiconductor device and fabrication method thereof
#293NITRIDE SEMICONDUCTOR TRANSISTOR
#294Semiconductor device
#295Field-effect transistor with nitride semiconductor and method for fabricating the same
#296Semiconductor device and substrate with chalcogen doped region
#297Twin-drain spatial wavefunction switched field-effect transistors
#298Junction field effect transistor with region of reduced doping
#299Semiconductor device
#300Production method for a unipolar semiconductor component and semiconductor device