208252 ⎘
Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor; Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes; Base regions of thyristors Anode base regions of thyristors
Thyristor
#2Thyristor volatile random access memory and methods of manufacture
#3Thyristor Volatile Random Access Memory and Methods of Manufacture
#4Thyristor volatile random access memory and methods of manufacture
#5Thyristor volatile random access memory and methods of manufacture
#6Thyristor volatile random access memory and methods of manufacture
#7TVS structures for high surge and low capacitance
#8Method of writing into and refreshing a thyristor volatile random access memory
#9Thyristor volatile random access memory and methods of manufacture
#10Semiconductor component including a short-circuit structure
#11Thyristor Volatile Random Access Memory and Methods of Manufacture
#12Power semiconductor device and corresponding module
#13Semiconductor device including a diode and guard ring
#14Tunable FIN-SCR for robust ESD protection
#15Tunable fin-SCR for robust ESD protection
#16Semiconductor device and substrate with chalcogen doped region
#17SCR apparatus and method for adjusting the sustaining voltage
#18SiC devices with high blocking voltage terminated by a negative bevel
#19SiC devices with high blocking voltage terminated by a negative bevel
#20Semiconductor device and substrate with chalcogen doped region
#21Semiconductor component with improved dynamic behavior
#22ESD protection structure
#23High voltage SCRMOS in BiCMOS process technologies
#24SEMICONDUCTOR DEVICE
#25Semiconductor component including a short-circuit structure
#26Gate turn-off thyristor