ClassID:

208251

H01L29/1012 - CPC Classification

Classification description:

Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor; Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes Base regions of thyristors

Sub-classes:
Recent Application in this class:
#1
20250015172
2025-01-09

SEMICONDUCTOR DEVICE AND METHOD FOR OPERATING A SEMICONDUCTOR DEVICE

#2
20240290828
2024-08-29

METHOD OF PEAK ON-STATE VOLTAGE REDUCTION FOR SEMICONDUCTOR DEVICE FABRICATION

#3
20240113210
2024-04-04

System and method for bi-directional trench power switches

#4
20240014302
2024-01-11

BIDIRECTIONAL THYRISTOR DEVICE WITH ASYMMETRIC CHARACTERISTICS

#5
20230087416
2023-03-23

MOS(metal oxide silicon) controlled thyristor device

#6
20230048984
2023-02-16

Semiconductor device with bi-directional double-base trench power switches

#7
20220189946
2022-06-16

ESD protection circuit with isolated SCR for negative voltage operation

#8
20210233912
2021-07-29

Multi-layer thyristor random access memory with silicon-germanium bases

#9
20200328214
2020-10-15

Multi-layer thyristor random access memory with silicon-germanium bases

#10
20200144141
2020-05-07

Bypass thyristor device with gas expansion cavity within a contact plate

#11
20200013884
2020-01-09

Bipolar junction transistor and method of fabricating the same

#12
20190326294
2019-10-24

Multi-layer thyristor random access memory with silicon-germanium bases

#13
20190013317
2019-01-10

High-Density Volatile Random Access Memory Cell Array and Methods of Fabrication

#14
20180350795
2018-12-06

ESD protection circuit with isolated SCR for negative voltage operation

#15
20180350794
2018-12-06

ESD protection circuit with isolated SCR for negative voltage operation

#16
20170287896
2017-10-05

Bipolar SCR

#17
20170256531
2017-09-07

SOI integrated circuit equipped with a device for protecting against electrostatic discharges

#18
20160204240
2016-07-14

POWER SEMICONDUCTOR DEVICE

#19
20160155735
2016-06-02

Semiconductor component including a short-circuit structure

#20
20160148940
2016-05-26

Cross-coupled thyristor SRAM semiconductor structures and methods of fabrication

#21
20160093623
2016-03-31

Two-transistor SRAM semiconductor structure and methods of fabrication

#22
20160093622
2016-03-31

Cross-coupled thyristor SRAM semiconductor structures and methods of fabrication

#23
20150380534
2015-12-31

Power semiconductor device and corresponding module

#24
20150340481
2015-11-26

LATCH-UP ROBUST SCR-BASED DEVICES

#25
20150294967
2015-10-15

ESD protection circuit with isolated SCR for negative voltage operation

#26
20150228770
2015-08-13

Robust ESD protection with silicon-controlled rectifier

#27
20150061023
2015-03-05

On-SOI integrated circuit equipped with a device for protecting against electrostatic discharges

#28
20140124828
2014-05-08

ESD protection circuit with isolated SCR for negative voltage operation

#29
20130320398
2013-12-05

Latch-up robust SCR-based devices

#30
20110284921
2011-11-24

HF-controlled bidirectional switch

#31
20090140290
2009-06-04

Semiconductor component including a short-circuit structure

#32
20070123006
2007-05-31

Semiconductor device and method of manufacturing the same

#33
15088681
2017-04-25

Bipolar SCR