208253 ⎘
Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor; Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes; Base regions of thyristors Cathode base regions of thyristors
GATE-COMMUTED THYRISTOR CELL WITH A BASE REGION HAVING A VARYING THICKNESS
#2INSULATED GATE TURN-OFF DEVICE WITH SHORT CHANNEL PMOS TRANSISTOR
#3Thyristor
#4Integrated gate-commutated thyristor (IGCT)
#5Thyristor volatile random access memory and methods of manufacture
#6Thyristor Volatile Random Access Memory and Methods of Manufacture
#7Thyristor volatile random access memory and methods of manufacture
#8Thyristor volatile random access memory and methods of manufacture
#9Flat gate commutated thyristor
#10Thyristor volatile random access memory and methods of manufacture
#11Thyristor with improved plasma spreading
#12Method for producing a doped semiconductor layer
#13Method of writing into and refreshing a thyristor volatile random access memory
#14Vertical insulated gate turn-off thyristor with intermediate p+ layer in p-base
#15Thyristor volatile random access memory and methods of manufacture
#16Bipolar non-punch-through power semiconductor device
#17Thyristor Volatile Random Access Memory and Methods of Manufacture
#18Power semiconductor device and corresponding module
#19Gated thyristor power device having a rapid turn off time
#20Tunable FIN-SCR for robust ESD protection
#21Gated thyristor power device
#22Semiconductor Device and Method for Producing a Doped Semiconductor Layer
#23Tunable fin-SCR for robust ESD protection
#24Power semiconductor device
#25Semiconductor devices with current shifting regions and related methods
#26SEMICONDUCTOR DIVICE
#27Power semiconductor device
#28Thyristor which can be triggered electrically and by radiation
#29Thyristor component with improved blocking capabilities in the reverse direction