208254 ⎘
Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor; Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes Channel region of field-effect devices
Sub-classes:APPARATUSES AND SYSTEMS FOR OFFSET CROSS FIELD-EFFECT TRANSISTORS
#2Semiconductor device with reduced loading effect
#3ULTRA-COMPACT, PASSIVE, WIRELESS SENSOR USING QUANTUM CAPACITANCE EFFECT IN GRAPHENE
#4SEMICONDUCTOR DEVICE
#5TRANSISTOR STRUCTURE AND MEMORY STRUCTURE
#6Semiconductor device
#7Semiconductor device with reduced loading effect
#8Semiconductor device
#9Structure providing charge controlled electronic fuse
#10Ultra-compact, passive, wireless sensor using quantum capacitance effect in graphene
#11Semiconductor device
#12Ultra-compact, passive, wireless sensor using quantum capacitance effect in graphene
#13Display device and manufacturing method thereof
#14Tunnel field effect transistor having anisotropic effective mass channel
#15Semiconductor device
#16Transistors with lattice matched gate structure
#17Ultra-compact, passive, varactor-based wireless sensor using quantum capacitance effect in graphene
#18Semiconductor device and manufacturing method thereof
#19Copper halide semiconductor based electronic devices
#20TREATMENT AND DIAGNOSTIC USING miRNA, PROTEIN AND GENE BIOMARKERS USING QUANTUM DOT FIELD-EFFECT TRANSISTOR (FET) SENSOR PLATFORM
#21Semiconductor devices with an enhanced resistivity region and methods of fabrication therefor
#22Compound semiconductor device and method of manufacturing the same
#23Ultra-compact, passive, varactor-based wireless sensor using quantum capacitance effect in graphene
#24Tunneling field effect transistors with a variable bandgap channel
#25Methods and systems for ultra-high quality gated hybrid devices and sensors
#26Tunnel field-effect transistor (TFET) with supersteep sub-threshold swing
#27Graphene nanoribbons and carbon nanotubes fabricated from SiC fins or nanowire templates
#28Method for growing epitaxies of a chemical compound semiconductor
#29Semiconductor device
#30Nanowire field-effect transistor and method for manufacturing same
#31Ultra-compact, passive, varactor-based wireless sensor using quantum capacitance effect in graphene
#32Silicon carbide semiconductor device and method of manufacturing the same
#33Semiconductor device and method of manufacturing same
#34Graphene nanoribbons and carbon nanotubes fabricated from SiC fins or nanowire templates
#35Graphene nanoribbons and carbon nanotubes fabricated from SiC fins or nanowire templates
#36Semiconductor substrates using bandgap material between III-V channel material and insulator layer
#37Semiconductor substrates using bandgap material between III-V channel material and insulator layer
#38Stress-generating structure for semiconductor-on-insulator devices
#39Tunnel field-effect transistor and methods for manufacturing thereof
#40Graphene nanoribbons and carbon nanotubes fabricated from SiC fins or nanowire templates
#41Semiconductor device and method of forming the same
#42Stress-generating structure for semiconductor-on-insulator devices
#43Semiconductor-on-insulator structures including a trench containing an insulator stressor plug and method of fabricating same
#44Transistors having implanted channel layers and methods of fabricating the same
#45Dispersed growth of nanotubes on a substrate
#46Semiconductor structure comprising a highly doped conductive channel region and method for producing a semiconductor structure
#47Charge carrier flow apparatus and methods
#48Variable capacitor structures with reduced channel resistance